CN105226143B - A kind of cutting method of GaAs base LED chips - Google Patents
A kind of cutting method of GaAs base LED chips Download PDFInfo
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- CN105226143B CN105226143B CN201510629523.7A CN201510629523A CN105226143B CN 105226143 B CN105226143 B CN 105226143B CN 201510629523 A CN201510629523 A CN 201510629523A CN 105226143 B CN105226143 B CN 105226143B
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- 238000005520 cutting process Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 230000004927 fusion Effects 0.000 claims description 2
- 238000003776 cleavage reaction Methods 0.000 description 9
- 230000007017 scission Effects 0.000 description 9
- 238000003698 laser cutting Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KIGJWIPKAWAGCE-UHFFFAOYSA-L gun blue Chemical compound Cl.[Cu+2].O[Se](=O)=O.[O-]S([O-])(=O)=O KIGJWIPKAWAGCE-UHFFFAOYSA-L 0.000 description 1
- SQEHCNOBYLQFTG-UHFFFAOYSA-M lithium;thiophene-2-carboxylate Chemical compound [Li+].[O-]C(=O)C1=CC=CS1 SQEHCNOBYLQFTG-UHFFFAOYSA-M 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
A kind of cutting method of GaAs base LED chips, comprises the following steps：（1）The hemisection of P faces, crisscross cutting groove is formed, chip p side electrode is equally spaced apart；（2）By chip P electrode downwardly tunica albuginea, N electrode is upward, is attached on tunica albuginea；（3）Chip N face scribings, release chip N faces stress are carried out along the cutting groove of P faces hemisection；（4）The chip streaked is subjected to pour mask, chip is transferred on blue film by tunica albuginea；（5）Sliver is carried out along cut with the chopper of breaking machine in chip N faces, chip is processed to independent crystal grain.This hair utilizes the pasting method after improving, the combination cutting method mutually taken using veneer sawing machine and laser scribing means advantage, chip P face stress and N faces stress are released to greatest extent, and reduce the deformational stress influence brought during pad pasting, thereby reduce the chipping easily occurred after chip cutting, split tube core phenomenon, improve the presentation quality after chip cutting.
Description
Technical field
The present invention relates to a kind of cutting method of LED (light emitting diode) chip, belongs to LED chip cutting technique field.
Background technology
In LED chip preparation technology, cutting is exactly by the whole core after the manufacturing process such as photoetching, plated film, thinned
Piece is divided into the process of the single crystal grain of required size, and this is indispensable in semiconductor light-emitting diode chip preparation technology
A procedure.For LED chip, it is saw blade cutting that more traditional, which is also that now industry uses widest cutting mode,.
Saw blade cutting is that the program set with the diamant of high speed rotation (3-4r/min) by process requirements is complete by chip
Cut into single crystal grain entirely.The cutting method of conventional GaAs base LED chips is that chip first is carried out into micro- cut (partly with diamant
Cut), then cut off entirely along hemisection tool marks with diamant.But saw blade cutting exist one it is inevitable the problem of：GaAs materials
Material is more crisp, and thicker metal material can be deposited in the positive back side of chip so that the stress of chip in itself is larger, along with cutting
Cutter direct contact chip when cutting, this allows for being easily broken during chip manufacture, and chip circumference edge easily produces chipping, collapsed
Angle, crackle etc., chip presentation quality is influenceed, reduce yield.
Laser cutting is a kind of new cutting technique occurred with the development of laser technology, mainly there is laser surface
Cutting and stealthy two kinds of cutting.Laser cutting is in chip surface or interior by the laser beam focus of certain energy density and wavelength
Portion, cut is gone out in chip surface or internal calcination by laser, then split again with breaking machine along cut.Laser cutting has production
Can the advantage such as height, high yield rate, automation mechanized operation, cost be low.But there is also some problems, laser scribing in itself for laser cutting
When, laser irradiation can destroy the active area of chip, it is necessary to wider marking groove be set in chip surrounding, due to existing in marking groove
Thicker metal level, after laser action, substantial amounts of chip can be produced, scribe line trench edges occur spraying, ablation phenomen, also limited
The lifting of production capacity, at the same can also be split because difficulty occurs in the ductility of metal material during breaking machine sliver, double born of the same parents phenomena such as.
Disclosed in Chinese patent literature CN102709171B《The cutting method of GaAs substrate super-small LED chips》, bag
Include：Carried out micro- the step of cutting comprehensively in chip surface first, the depth of hemisection is the 10%~20% of chip overall height, then
Chip after hemisection, i.e., be positioned on cutting machine by the step of carrying out full impregnated cutting to chip, with diamond cutter by chip from side
Along the cutting for starting to be completely separated along Cutting Road.But the shortcomings that this method is along the Cutting Road of hemisection cut thoroughly comprehensively
Thing is cut, knife up must reduce, and knife is deepened deeply, and the knife back increases with chip surface contact area, inevitably produce and burst apart, no
It can effectively solve the problem that cutting is burst apart problem.
Disclosed in CN102709409B《A kind of quaternary system LED chip and its cutting method》, including：The first step is in LED core
Piece positive terminal one side diamond cutting cutter hemisection LED chip, forms Cutting Road, by the positive pole of the LED chip equidistantly arranged
End separates, and the positive terminal of second step LED chip sticks blue film, and negative pole is short to stick wheat membrane, and the 3rd step is by the positive pole of LED chip
Down, negative pole end is positioned on the splitting platform of splitting machine upward at end, with the splitting knife of splitting machine along Cutting Road by LED chip pressure
Disconnected, LED chip has been processed to crystal grain independent one by one.But the shortcomings that this method is that chip positive pole is cut with diamond tool, bear
Extremely directly cleaved with splitting knife, the rigid strength acted directly on chip is big, and the warping stress of chip itself is also big, after cutting
The chip probability that occurs bursting apart, collapsing angle it is very big.
Disclosed in CN104347760A《A kind of cutting method of LED chip》, including：Marked in chip back with laser
Trace, with diamond saw blade knife along cut saw blade, in addition to the chip of backcut overturn into pour mask, with sliver knife in chip front side along ditch
Groove cuts into many crystal grain.But the shortcomings that this method, is directly cut with saw blade knife again after chip back marks cut with laser
Cut, cut groove edge is not smooth, easily causes saw blade knife and collapses knife, causes to burst apart, and the chip prepared is rebush bottom
Chip, the chip prepared with common process is not applied to.
Disclosed in CN102079015A《A kind of laser cutting method of GaAs base LED chips》, including：In GaAs chips N
Face forms laser scratch with laser cutting, and then chip is split along laser scratch with breaking machine in GaAs chip P faces, is formed and swashed
The depth of light cut is the 1/10-4/5 of chip thickness.It is but easily broken when the shortcomings that this method is that chip N faces laser scratch is too deep
Bad chip epitaxial layer structure, during depth deficiency, although P faces it is as maximum as possible remain material regions, GaAs materials
It is hard crisp, itself stress is larger, and when P faces are directly split with sliver knife, dorsal fissure easily occurs.
The content of the invention
Easily there is chip chipping for existing chip cutting technology, split the problem of tube core, the present invention provides one kind can
Avoid the occurrence of chipping, split tube core phenomenon, improve the cutting method of the GaAs base LED chips of presentation quality after cutting.
The cutting method of the GaAs base LED chips of the present invention, comprises the following steps：
(1) P faces hemisection：Comprehensive hemisection, release P faces stress are carried out in chip P faces；
(2) tunica albuginea is pasted：By chip P electrode downwardly tunica albuginea, N electrode is upward, is attached on tunica albuginea；
(3) N faces scribing：In chip N faces, the cutting groove along the hemisection of P faces carries out laser scratch operation, and release chip N faces should
Power；
(4) pour mask：Chip P electrode downwardly tunica albuginea, N electrode is upward, and chip is transferred on blue film by tunica albuginea；
(5) sliver, knife depth and the P faces half of chopper are carried out along the cut in step (3) with the chopper of breaking machine in chip N faces
Cutting depth merges, and chip is processed to independent crystal grain.
The detailed process of step (1) the P faces hemisection is：First carried out comprehensively partly along the direction vertical with the big cleavage side of chip
Cut, then comprehensive hemisection is carried out along the direction on parallel big cleavage side, crisscross cutting groove is formed, by between chip p side electrode etc.
Away from separating.
The knife up of step (1) the P faces hemisection is set as 120-150 μm, and cutting speed is the 20-70mm/ seconds, saw blade knife knife
Sword overhang is 550-600 μm, and cutting well width is 15-20 μm.
The depth of step (1) the P faces hemisection is the 20%~25% of chip thickness.
Tunica albuginea is first toasted into the 5-10 seconds at 67-73 DEG C during step (2) the patch tunica albuginea, opens the thorough diastole of film, reduces film
The deformational stress brought influences.
The laser power of step (3) the N faces scribing is 1.4-1.7W, speed 70-80mm/s, scratch width 8-10
μm。
The depth of step (3) the N faces scribing is the 20%~30% of chip thickness.
Before step (4) the pour mask operation, blue film is first toasted into the 5-10 seconds at 67-73 DEG C, the thorough diastole of blue film is opened, subtracts
The deformational stress that membranelle is brought influences.
Breaking machine chopper thickness of knife edge is 8 μm in the step (5), and chopper tool marks width is 10-15 μm.
In the step (1) in cutting groove shape, the step (3) in the cut shape and the step (5) of scribing
The shape of breaking machine chopper tool marks is all V-shaped.
The combination cutting method that the present invention is mutually taken using veneer sawing machine with laser scribing means advantage, hemisection is carried out in chip P faces
Operation, N faces first carry out laser scribing operation and carry out sliver operation again, release chip P face stress and N faces stress to greatest extent,
The stress of chip internal is fully released, and the cutting groove shape of three kinds of operating types is all V-type, ensure that different cutting situations
The fusion of lower chip stress, the chip outward appearance after cutting split tube core, edge impulse- free robustness, after effectively increasing cutting without chipping
Chip presentation quality.
Brief description of the drawings
Fig. 1 is the structural representation after the comprehensive hemisection in chip P faces of the present invention.
Fig. 2 is schematic diagram of the big cleavage of chip of the present invention after fringe region is cut away with both sides during small cleavage.
Fig. 3 is the structural representation after chip N faces laser scribing of the present invention.
Fig. 4 is the structural representation after chip N faces breaking machine sliver of the present invention.
In figure：1st, p faces electrode, 2, epitaxial layer, 3, hemisection tool marks, 4, substrate, 5, n faces electrode, 6, size dissociation side alignment
Wire casing, 7, cut, 8, breaking machine chopper tool marks.
Embodiment
The cutting method of the GaAs base LED chips of the present invention, specifically comprises the following steps：
(1) the comprehensive hemisection in P faces
The p side electrode 1 of LED chip is positioned on saw blade machine worktable upwards, clicked on " entirely after selecting hemisection operation procedure
Surface trimming ", start to cut after the automatic calibrated horizontal of veneer sawing machine, until chip CH1 faces and the cutting of CH2 faces are completed.Such as Fig. 1 institutes
Show.Comprehensive hemisection first is carried out along the direction vertical with the big cleavage side of chip, then comprehensive half is carried out along the direction on parallel big cleavage side
Cut, form crisscross cutting groove, chip p side electrode 1 is equally spaced apart.
It is 10mm/s to cut initial feed velocity, after cutting 25 knives, can adjust knife speed 20-70mm/s according to cutting situation,
The knife up of saw blade knife is set in 120-150 μm, and the blade overhang of saw blade knife is 550-600 μm.Half cutting depth is chip thickness
20%~25%, epitaxial layer 2 and substrate 4 (referring to Fig. 1) are switched to by chip p side electrode 1, the maximum raw material of chip can be retained
Region, and chip P faces stress is discharged to greatest extent.The cutting groove that hemisection tool marks 3 are formed is V-shaped, and cutting groove top width is 15-
20μm。
(2) after the completion of hemisection cutting, the big cleavage of chip is cut away in both sides of the edge region while with small cleavage, allows chip list
Face outmost turns electrode is directly tangent with edge, there is provided chip calibrates parallel alignment position during laser scribing, and as shown in Figure 2 is big
Small dissociation side alignment wire casing 6.
(3) tunica albuginea is pasted, chip P electrode is downward, and N electrode is attached on tunica albuginea upwards
Chip P is positioned in laminator heating dish downwards, the big cleavage side of chip is positioned against on the right side of heating dish, is passed through
For pad pasting machine operation by adhesive die attachment on tunica albuginea, P faces film, and N is face-up.
Before operation, change the Normal practice for directly adhering to chip with film in the past, change into and first toast film once, first will be white
Film toasts, and it is 67-73 DEG C to set baking temperature, toasts the 5-10 seconds, opens the thorough diastole of film, and reducing the next deformation of film strips should
Power influences.
(4) laser N faces scribing
Chip is positioned on laser scribing machine worktable, chip P faces ultrawhite film, N is face-up.According at left and right sides of chip
Alignment mark (the size dissociation side alignment wire casing 6) leveling cut out, setting laser power are 1.4-1.7W, power output hundred
Point than being 98%, scribing speed be the 70-80mm/ seconds, focal length 8.3mm, and die layout is 155 μm, starts scribing, formation it is sharp
The depth of light cut is the 20%~30% of chip thickness, and scratch width is 8-10 μm, discharges N faces stress, such as Fig. 3 to greatest extent
Shown, V-type is presented in the shape of cut 7 of laser scribing.
(5) pour mask
The chip being attached on tunica albuginea is subjected to pour mask operation by laminator, the adhesive die attachment after pour mask is on blue film, P faces
Towards film, N upwardly, before blue film pour mask operation, is remained and blue film first is carried out into baking operation, baking temperature is 67-73 DEG C, baking
The 5-10 seconds, open the thorough diastole of film, reducing the deformational stress that film strips are come influences.
(6) chip being attached on blue film is placed on breaking machine splitting platform, breaking machine chopper thickness of knife edge is 8 μm, is split
Knife tool marks width is 10-15 μm.The super blue film in chip P faces, N is face-up, horizontal along laser scratch calibration chip, sets breaking machine B-
DEPTH (0) is 5 μm, and B-DEPTH (90) is 5 μm, and STEP is 155 μm, and BREAK SPEED are 8000 μm/sec, SLIT WIDTH
For 160 μm, then click on and proceed by sliver, along chip horizontal stroke clump two sides cut sliver, the knife of chopper melts with the cutting depth of P faces half deeply
Close, chip has just been processed to many independent crystal grain, as shown in figure 4, the shape of breaking machine chopper tool marks 8 is V-shaped.
Claims (1)
1. a kind of cutting method of GaAs base LED chips, it is characterized in that, comprise the following steps：
（1）The hemisection of P faces：Comprehensive hemisection, release P faces stress are carried out in chip P faces；
（2）Paste tunica albuginea：By chip P electrode downwardly tunica albuginea, N electrode is upward, is attached on tunica albuginea；
（3）The scribing of N faces：In chip N faces, the cutting groove along the hemisection of P faces carries out laser scratch operation, release chip N faces stress；
（4）Pour mask：Chip P electrode is downward, and N electrode is upward, and chip is transferred on blue film by tunica albuginea；
（5）In chip N faces, the chopper of breaking machine is along step（3）In cut carry out sliver, the knife of chopper is deep with the cutting-in of P faces half
Degree fusion, chip are processed to independent crystal grain；
The step（1）The knife up of P faces hemisection is set as 120-150 μm, and cutting speed is the 20-70mm/ seconds, and saw blade knife blade is stretched
Output is 550-600 μm, and cutting well width is 15-20 μm；
The step（1）The depth of P faces hemisection is the 20%~25% of chip thickness；
The step（2）Tunica albuginea is first toasted into the 5-10 seconds at 67-73 DEG C when pasting tunica albuginea, opens the thorough diastole of film, reduces film strips and comes
Deformational stress influence；
The step（3）The laser power of N faces scribing is 1.4-1.7W, speed 70-80mm/s, a width of 8-10 μm of cut；
The step（3）The depth of N faces scribing is the 20%~30% of chip thickness；
The step（4）Before pour mask operation, blue film is first toasted into the 5-10 seconds at 67-73 DEG C, opens the thorough diastole of blue film, reduces film
The deformational stress brought influences；
The step（5）Middle breaking machine chopper thickness of knife edge is 8 μm, and chopper tool marks width is 10-15 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789390B (en) * | 2016-05-05 | 2018-08-07 | 扬州乾照光电有限公司 | A kind of production technology of quaternary system LED chip |
| CN107394016A (en) * | 2017-07-24 | 2017-11-24 | 扬州乾照光电有限公司 | A kind of preparation method for improving light emitting diode monolithic output |
| CN107768501A (en) * | 2017-10-17 | 2018-03-06 | 扬州乾照光电有限公司 | The sorting method for packing of LED cellulars in a kind of LED chip |
| CN108044240A (en) * | 2017-12-19 | 2018-05-18 | 东莞市盛雄激光设备有限公司 | The processing method and sliver apparatus of a kind of liquid crystal display |
| CN108133984B (en) * | 2018-01-30 | 2020-05-19 | 厦门乾照光电股份有限公司 | Vertical structure light-emitting diode and manufacturing method thereof |
| CN110098115A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | The cutting method of wafer |
| CN108582529B (en) * | 2018-04-13 | 2020-05-05 | 无锡奥夫特光学技术有限公司 | Cutting method of optical window |
| US11309188B2 (en) | 2018-05-09 | 2022-04-19 | Semiconductor Components Industries, Llc | Singulation of silicon carbide semiconductor wafers |
| CN108597999B (en) * | 2018-05-28 | 2020-11-06 | 扬州虹扬科技发展有限公司 | Cutting method for improving chip separation rate |
| CN109081303A (en) * | 2018-08-27 | 2018-12-25 | 无锡芯坤电子科技有限公司 | A kind of chip double-side cutting technique |
| CN111725059A (en) * | 2019-03-21 | 2020-09-29 | 山东浪潮华光光电子股份有限公司 | Segmentation method for improving appearance of silicon-based LED chip |
| CN111900080B (en) * | 2019-05-05 | 2022-08-12 | 山东浪潮华光光电子股份有限公司 | Cutting method of LED chip |
| CN111900081B (en) * | 2019-05-05 | 2022-09-16 | 山东浪潮华光光电子股份有限公司 | Cutting method of silicon-based LED chip |
| CN112151642B (en) * | 2019-06-26 | 2021-10-01 | 山东浪潮华光光电子股份有限公司 | Cutting method for reducing cutting loss of LED chip |
| CN113675079B (en) * | 2020-05-14 | 2022-08-23 | 重庆康佳光电技术研究院有限公司 | Transfer method and display device |
| CN111799220B (en) * | 2020-09-08 | 2020-12-11 | 南京晶驱集成电路有限公司 | Wafer splitting method and application thereof |
| CN112967928B (en) * | 2020-12-16 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | Chip cutting method and chip transferring method |
| CN113140617B (en) * | 2021-03-16 | 2024-05-14 | 南瑞联研半导体有限责任公司 | High-power semiconductor device and preparation method thereof |
| CN114551301B (en) * | 2022-02-17 | 2023-06-16 | 无锡芯坤电子科技有限公司 | Semiconductor processing method and system thereof |
| CN114986358B (en) * | 2022-05-27 | 2024-04-09 | 深圳市奥伦德元器件有限公司 | Chip dicing method, apparatus, controller, and computer-readable storage medium |
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| KR100676249B1 (en) * | 2001-05-23 | 2007-01-30 | 삼성전자주식회사 | Coolant for cutting substrate and method for cutting using the same and apparatus for performing the same |
| CN102079015A (en) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip |
| CN102097546B (en) * | 2010-11-25 | 2013-03-06 | 山东华光光电子有限公司 | Method for cutting LED chip |
| CN102709171B (en) * | 2012-05-31 | 2015-04-22 | 东莞洲磊电子有限公司 | Method for cutting ultra-small light-emitting diode (LED) chip with GaAs substrate |
| JP2014101269A (en) * | 2012-10-25 | 2014-06-05 | Nippon Electric Glass Co Ltd | Cutting method of glass film |
| CN103956337B (en) * | 2014-05-23 | 2016-06-15 | 扬州杰利半导体有限公司 | The cutting method of a kind of semiconductor wafer |
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