CN113172781A - Cutting method of ultrathin wafer - Google Patents
Cutting method of ultrathin wafer Download PDFInfo
- Publication number
- CN113172781A CN113172781A CN202110369726.2A CN202110369726A CN113172781A CN 113172781 A CN113172781 A CN 113172781A CN 202110369726 A CN202110369726 A CN 202110369726A CN 113172781 A CN113172781 A CN 113172781A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cutting
- scribing
- dicing
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 239000002313 adhesive film Substances 0.000 claims description 24
- 239000003292 glue Substances 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000013208 measuring procedure Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 29
- 230000007547 defect Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 97
- 238000006073 displacement reaction Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007771 core particle Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
A method for cutting an ultrathin wafer comprises the steps of cutting the wafer into larger chip particles, releasing internal stress of the wafer, cutting the larger chip particles into smaller particles until the wafer is cut into a target size, wherein the method is suitable for cutting the wafer with the thickness of 30-200 mu m, perfectly solves the problems that the ultrathin wafer is easy to crack and break edges, reduces the probability of crystal flying in the cutting process, reduces the defect rate of breaking the front side and the back side of the ultrathin wafer, and improves the cutting efficiency of the ultrathin wafer.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip manufacturing, and particularly relates to a method for cutting an ultrathin wafer.
Background
With the increasing demand for shrinking feature sizes and introducing full-scale 3D integration in semiconductor wafer processing, the trend of wafer thickness towards thinner and thinner wafers gradually enters the range of thicknesses within 50 μm. However, the cost of obtaining thinner wafers is to make them extremely fragile, because the deep thinning process and the back-end metallization process apply extra stress to the ultra-thin wafers, which brings a great risk to the wafer dicing process, and the wafer may crack, break, etc. with a little carelessness, resulting in bad chips or even scrapping.
The Chinese patent with application number of 201310408770.5 discloses a method for producing 50 μm ultra-thin chips, which comprises the steps of thinning a wafer, cutting the wafer in a step mode, namely, forming a first knife mark on the wafer by a first scribing knife, and then cutting the wafer from the bottom of the first knife mark to the bottom of the wafer by a second scribing knife to complete the wafer cutting. The two scribing cutters used in the method have different thicknesses and can only be implemented on a double-shaft scribing machine, but a large number of single-shaft scribing machines in the market cannot be implemented.
The chinese patent application No. 201811115104.1 discloses a multi-light source laser grooving process, which cuts a low dielectric material in a wafer dicing street using four narrow beam lasers to form a groove, and then cuts a silicon substrate in the wafer dicing street along the groove using a dicing blade. The process adopts a method of firstly carrying out laser grooving and then mechanically cutting and penetrating by a scribing cutter, but the laser scribing machine is matched, is expensive, can not be used by all foundries, and has certain limitation.
Disclosure of Invention
The invention aims to provide a method for cutting an ultrathin wafer, aiming at overcoming the defects of the prior art, and solving the problems that the ultrathin wafer is easy to crack and break edges in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
the method for cutting the ultrathin wafer comprises the following steps:
(1) pasting a glue film on the back of the wafer, and baking the wafer in a baking oven at 60-80 ℃ for 10-30 min;
(2) taking out the baked wafer and naturally cooling to room temperature, then placing the wafer pasted with the adhesive film on a ceramic working disc of a dicing saw, and starting vacuum;
(3) mounting the scribing cutter on a main shaft of the scribing machine and finishing cutter repairing and height measuring procedures;
(4) cutting the wafer along the transverse direction, namely the CH1 direction, by using the process parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s, wherein the stepping interval is N x b, wherein b represents the width of crystal grains, and N =2, 3 and 4 … …;
(5) using the process parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 40-80 mm/s to slice the wafer along the longitudinal direction, namely the CH2 direction, wherein the stepping interval is N x a, wherein a represents the length of crystal grains, and N =2, 3 and 4 … …;
(6) dicing the wafer CH3 by using the process parameters of the spindle rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s, wherein the stepping distance is (N-1) b, wherein b represents the width of a crystal grain, and N =2, 3 and 4 … …;
(7) dicing the wafer CH4 direction by using the process parameters of the spindle rotation speed of 20000-40000 r/min and the feed speed of 40-80 mm/s, wherein the stepping distance is (N-1) a, wherein a represents the grain length, and N =2, 3, 4 … …;
(8) and repeatedly executing the step 4) and the step 5) until the wafer is cut into the target core grain size a x b.
The adhesive film in the step 1) adopts a blue film, a white film or a UV film.
And 4) washing the wafer and the scribing blade by using cooling water in the cutting process of the step 4) and the step 5).
The CH1 and CH3 are parallel to each other, and the CH2 and CH4 are parallel to each other.
And 4), 5), 6) and 7), wherein the cutting depth is the actual thickness of the wafer plus 0.03-0.04 mm.
The invention has the beneficial effects that:
1. the method for cutting the ultrathin wafer utilizes a jumping cutting mode, firstly cuts the wafer into larger chip particles, releases internal stress of the wafer, and then cuts the larger chip particles into smaller particles until the wafer is cut into a target size.
2. Reduce the generation probability of crystal fly in the cutting process
In the semiconductor industry, the reduction of chip size represents a state-of-the-art trend. The smaller the chip size is, the poorer the adhesive capacity of the chip on the adhesive film is, the chip is easily washed away by cooling water and flies in the wafer cutting process, the chip is lost, and the cutting edge of the scribing cutter is broken with high probability to cause damage and scrapping of the scribing cutter.
According to the invention, by adopting the leapfrog cutting method of the side length of the N-chip, when the wafer is cut into the chip particles with larger sizes, the bonding area of the adhesive film to the chip is increased, the possibility of larger displacement of crystal grains is reduced, and the occurrence probability of crystal flying is effectively reduced. And then when the larger chip particles are cut into smaller particles, the material removed by the wafer is reduced, the cutting resistance is reduced, the frequency of the displacement of the crystal grains is also reduced, and the probability of crystal flying is also reduced.
3. Reduce the occurrence probability of ultra-thin wafer dicing
The ultrathin wafer is extremely fragile due to the excessively thin thickness, the adhesive force of an adhesive film is not firm in the cutting process, the supporting area is not enough, and the phenomena of splintering, edge breakage and the like are easily caused.
The invention adopts a skip cutting method of N chip side length, firstly, the wafer is cut into larger chip particles, the bonding area of the adhesive film to the chip is increased, and the probability of the cracking phenomenon caused by larger displacement of crystal grains is reduced. Then, the larger-size chip particles are cut into smaller-size particles until the larger-size chip particles are cut into target sizes, at the moment, the material removal rate of the wafer is reduced, the cutting resistance is reduced, the frequency of the displacement of the crystal grains is also reduced, and the probability of the occurrence of the splintering phenomenon is also reduced.
4. Reduce the defect rate of edge chipping on the front and back surfaces of ultra-thin wafer dicing
According to the side length skip cutting method of the N-chip, disclosed by the invention, the wafer is firstly cut into larger-size chip particles, so that a larger bonding area is kept between the adhesive film and the chip, the supporting force and the bonding force of the adhesive film to the chip are increased, the phenomenon that the chip is displaced due to insufficient bonding force between the adhesive film and the chip in the cutting process is avoided, and the defect rate of edge breakage of the front side and the back side of the wafer in the cutting process is further reduced.
5. Improving the cutting efficiency of ultra-thin wafers
The feed speed used in the conventional dicing method for ultra-thin wafers at the present stage is generally 10-20 mm/s. When the method is used, when the chip particles with larger sizes are cut for the first time, the adhesive film and the chip keep larger bonding area, so that the supporting force and the bonding force of the adhesive film to the chip are increased, the frequency of the displacement of crystal grains is smaller, and the feed speed can reach 20-40 mm/s; when the wafer is diced for the second time into smaller chip particles, because the material removal of the wafer is reduced, the cutting resistance is reduced, and the frequency of the displacement of crystal grains is also reduced, the feed speed can reach 40-80 mm/s; compared with the conventional cutting parameters, the method provided by the invention has the advantage that the cutting efficiency is obviously improved.
Drawings
FIG. 1 is a schematic view of a patch of the present invention;
FIG. 2 is a schematic drawing of a scribe of the present invention;
FIG. 3 is a schematic view of the invention after dicing.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
The present invention provides a method for dicing an ultra-thin wafer, as shown in fig. 1 to 3.
The method for cutting the ultrathin wafer comprises the following steps:
the method comprises the following steps: and pasting a glue film on the back of the wafer, and baking the wafer in a baking oven at the temperature of 60-80 ℃ for 10-30 min to ensure firm pasting between the wafer and the glue film and reduce chip falling off in the cutting process.
Step two: taking out the baked wafer and naturally cooling to room temperature, then placing the wafer with the side pasted with the adhesive film on a ceramic working disc of a dicing saw, and starting vacuum.
Step three: and (4) installing the scribing cutter on a main shaft of the scribing machine and finishing cutter repairing and height measuring procedures.
Step four: cutting the wafer along the transverse CH1 direction by using the process parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s; the dicing depth is the actual thickness of the wafer plus 0.03-0.04 mm. The step pitch is N × b, (b denotes the grain width, N =2, 3, 4 … …).
Step five: cutting the wafer along the longitudinal direction, namely the CH2 direction, by using the process parameters of the main shaft rotating speed of 20000-40000 r/min and the feed speed of 40-80 mm/s; the cutting depth is the actual thickness of the wafer plus 0.03-0.04 mm; the step pitch is N × a, (a represents the grain length, N =2, 3, 4 … …).
Step six: cutting the wafer CH3 by using the technological parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s; the dicing depth is the actual thickness of the wafer plus 0.03-0.04 mm. The step pitch was (N-1) × (b denotes the grain width, N =2, 3, 4 … …).
Step seven: cutting the wafer CH4 by using the technological parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 40-80 mm/s; the cutting depth is the actual thickness of the wafer plus 0.03-0.04 mm; the step pitch is (N-1) × a, (a represents the grain length, N =2, 3, 4 … …).
Step eight: and repeating the fourth step and the fifth step until the wafer is cut into the target core grain size a x b.
The adhesive film in the first step can be a blue film, a white film or a UV film.
And washing the wafer and the scribing blade by using cooling water in the scribing process in the fourth step and the fifth step.
In the above steps, CH1 and CH3 are parallel to each other, and CH2 and CH4 are parallel to each other.
The wafer may be a silicon wafer, a gallium arsenide wafer, a silicon carbide wafer, or the like.
In the following examples, a silicon wafer is used for illustration.
Firstly, a silicon wafer 1 with a thickness of 150 μm and a core grain size of 200X200 μm is selected. Attaching a Nidong SPV-224 adhesive film 2 with the thickness of 0.07mm to the back of a silicon wafer, and then attaching a tension ring 3, wherein the schematic diagram is shown in FIG. 1; putting the whole body into a 70 ℃ oven for baking for 20min, taking out after baking, and naturally cooling to room temperature; and then placing one side of the silicon wafer, which is pasted with the glue film, on a ceramic working disc, opening a vacuum generator of the scribing machine, installing a scribing knife on a main shaft of the scribing machine, and finishing the procedures of knife trimming and height measurement.
Setting technological parameters of 35000r/min of a main shaft of a dicing saw, 40 mu m of blade height, 20mm/s of CH1 cutting speed, 400 mu m (2 x 200) of stepping interval, 40mm/s of CH2 cutting speed, 400 mu m (2 x 200) of stepping interval, 20mm/s of CH3 cutting speed, 200 mu m of stepping interval, 40mm/s of CH4 cutting speed and 200 mu m of stepping interval.
Then the dicing saw executes a full-automatic cutting program, and the silicon wafers CH1, CH2, CH3 and CH4 are sequentially diced according to the process parameters; the dicing of CH1 and CH2 was completed to obtain larger core particles, as shown in FIG. 2. The smaller core particles were cut after CH3 and CH4 cutting, as shown schematically in fig. 3. At this point, the whole wafer is cut, and the wafer is taken out from the working disc.
The method for cutting the ultrathin wafer comprises the following steps of cutting the wafer into larger chip particles by a skip cutting mode, releasing internal stress of the wafer, cutting the larger chip particles into smaller particles until the wafer is cut into a target size, and is suitable for cutting the wafer with the thickness of 30-200 mu m, so that the problems that the ultrathin wafer is easy to crack and break are perfectly solved, and the method is specific:
1. reduce the generation probability of crystal fly in the cutting process
In the semiconductor industry, the reduction of chip size represents a state-of-the-art trend. The smaller the chip size is, the poorer the adhesive capacity of the chip on the adhesive film is, the chip is easily washed away by cooling water and flies in the wafer cutting process, the chip is lost, and the cutting edge of the scribing cutter is broken with high probability to cause damage and scrapping of the scribing cutter.
According to the invention, by adopting the leapfrog cutting method of the side length of the N-chip, when the wafer is cut into the chip particles with larger sizes, the bonding area of the adhesive film to the chip is increased, the possibility of larger displacement of crystal grains is reduced, and the occurrence probability of crystal flying is effectively reduced. And then when the larger chip particles are cut into smaller particles, the material removed by the wafer is reduced, the cutting resistance is reduced, the frequency of the displacement of the crystal grains is also reduced, and the probability of crystal flying is also reduced.
2. Reduce the occurrence probability of ultra-thin wafer dicing
The ultrathin wafer is extremely fragile due to the excessively thin thickness, the adhesive force of an adhesive film is not firm in the cutting process, the supporting area is not enough, and the phenomena of splintering, edge breakage and the like are easily caused.
The invention adopts a skip cutting method of N-chip side length, firstly, a wafer is cut into larger-size chip particles, the bonding area of a glue film to the chip is increased, and the probability of the cracking phenomenon caused by larger displacement of crystal grains is reduced; then, the larger-size chip particles are cut into smaller-size particles until the larger-size chip particles are cut into target sizes, at the moment, the material removal rate of the wafer is reduced, the cutting resistance is reduced, the frequency of the displacement of the crystal grains is also reduced, and the probability of the occurrence of the splintering phenomenon is also reduced.
3. Reduce the defect rate of edge chipping on the front and back surfaces of ultra-thin wafer dicing
According to the side length skip cutting method of the N-chip, disclosed by the invention, the wafer is firstly cut into larger-size chip particles, so that a larger bonding area is kept between the adhesive film and the chip, the supporting force and the bonding force of the adhesive film to the chip are increased, the phenomenon that the chip is displaced due to insufficient bonding force between the adhesive film and the chip in the cutting process is avoided, and the defect rate of edge breakage of the front side and the back side of the wafer in the cutting process is further reduced.
4. Improving the cutting efficiency of ultra-thin wafers
The feed speed used in the conventional dicing method for ultra-thin wafers at the present stage is generally 10-20 mm/s. When the method is used, when the chip particles with larger sizes are cut for the first time, the adhesive film and the chip keep larger bonding area, so that the supporting force and the bonding force of the adhesive film to the chip are increased, the frequency of the displacement of crystal grains is smaller, and the feed speed can reach 20-40 mm/s; when the wafer is diced for the second time into smaller chip particles, because the material removal of the wafer is reduced, the cutting resistance is reduced, and the frequency of the displacement of the crystal grains is also reduced, the feed speed can reach 40-80 mm/s. Compared with the conventional cutting parameters, the method provided by the invention has the advantage that the cutting efficiency is obviously improved.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents.
In the description of the present invention, it is to be understood that the terms "front", "rear", "left", "right", "center", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the scope of the present invention.
Claims (5)
1. A method for scribing an ultrathin wafer is characterized by comprising the following steps:
(1) pasting a glue film on the back of the wafer, and baking the wafer in a baking oven at 60-80 ℃ for 10-30 min;
(2) taking out the baked wafer and naturally cooling to room temperature, then placing the wafer pasted with the adhesive film on a ceramic working disc of a dicing saw, and starting vacuum;
(3) mounting the scribing cutter on a main shaft of the scribing machine and finishing cutter repairing and height measuring procedures;
(4) cutting the wafer along the transverse direction, namely the CH1 direction, by using the process parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s, wherein the stepping interval is N x b, wherein b represents the width of crystal grains, and N =2, 3 and 4 … …;
(5) using the process parameters of the main shaft rotation speed of 20000-40000 r/min and the feed speed of 40-80 mm/s to slice the wafer along the longitudinal direction, namely the CH2 direction, wherein the stepping interval is N x a, wherein a represents the length of crystal grains, and N =2, 3 and 4 … …;
(6) dicing the wafer CH3 direction by using the process parameters of the spindle rotation speed of 20000-40000 r/min and the feed speed of 20-40 mm/s, wherein the stepping distance is (N-1) b, wherein b represents the width of crystal grains, and N =2, 3, 4 … …);
(7) dicing the wafer CH4 direction by using the process parameters of the spindle rotation speed of 20000-40000 r/min and the feed speed of 40-80 mm/s, wherein the stepping distance is (N-1) a, wherein a represents the grain length, and N =2, 3, 4 … …;
(8) and repeatedly executing the step 4) and the step 5) until the wafer is cut into the target core grain size a x b.
2. A method of scribing an ultra thin wafer as claimed in claim 1, wherein: the adhesive film in the step (1) adopts a blue film, a white film or a UV film.
3. A method of scribing an ultra thin wafer as claimed in claim 1, wherein: and (5) washing the wafer and the scribing blade by using cooling water in the cutting process of the step (4) and the step (5).
4. A method of scribing an ultra thin wafer as claimed in claim 1, wherein: the CH1 and CH3 are parallel to each other, and the CH2 and CH4 are parallel to each other.
5. A method of scribing an ultra thin wafer as claimed in claim 1, wherein: when the dicing is performed in the steps (4), (5), (6) and (7), the dicing depth is the actual thickness of the wafer + 0.03-0.04 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110369726.2A CN113172781A (en) | 2021-04-07 | 2021-04-07 | Cutting method of ultrathin wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110369726.2A CN113172781A (en) | 2021-04-07 | 2021-04-07 | Cutting method of ultrathin wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113172781A true CN113172781A (en) | 2021-07-27 |
Family
ID=76923133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110369726.2A Pending CN113172781A (en) | 2021-04-07 | 2021-04-07 | Cutting method of ultrathin wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113172781A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151186A (en) * | 2010-01-21 | 2011-08-04 | Toshiba Corp | Method of dividing semiconductor wafer |
| CN102376643A (en) * | 2010-08-04 | 2012-03-14 | 株式会社迪思科 | Cutting method |
| CN108933103A (en) * | 2018-07-11 | 2018-12-04 | 宁波芯健半导体有限公司 | A kind of super-small chip cutting technique |
| CN109037102A (en) * | 2018-07-16 | 2018-12-18 | 扬州晶新微电子有限公司 | A kind of dicing method of semiconductor device chip wafer |
| CN111883424A (en) * | 2020-07-16 | 2020-11-03 | 安徽大衍半导体科技有限公司 | Silicon wafer scribing process |
-
2021
- 2021-04-07 CN CN202110369726.2A patent/CN113172781A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151186A (en) * | 2010-01-21 | 2011-08-04 | Toshiba Corp | Method of dividing semiconductor wafer |
| CN102376643A (en) * | 2010-08-04 | 2012-03-14 | 株式会社迪思科 | Cutting method |
| CN108933103A (en) * | 2018-07-11 | 2018-12-04 | 宁波芯健半导体有限公司 | A kind of super-small chip cutting technique |
| CN109037102A (en) * | 2018-07-16 | 2018-12-18 | 扬州晶新微电子有限公司 | A kind of dicing method of semiconductor device chip wafer |
| CN111883424A (en) * | 2020-07-16 | 2020-11-03 | 安徽大衍半导体科技有限公司 | Silicon wafer scribing process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8523636B2 (en) | Working object grinding method | |
| CN101026126B (en) | Method for producing semiconductor chip | |
| CN109559983B (en) | Method for cutting wafer | |
| EP1642332B1 (en) | Die bonding | |
| CN107706120B (en) | The packaging method of ultra-thin wafers | |
| JP2014183310A (en) | Cutting method in wafer manufacturing process | |
| KR100789200B1 (en) | Method for production of semiconductor chip and semiconductor chip | |
| KR102436342B1 (en) | Wafer processing method | |
| JPH07106285A (en) | Manufacture of semiconductor device | |
| CN111900080B (en) | Cutting method of LED chip | |
| CN111009463B (en) | Method for neatly separating back surface metal of SiC chip laser scribing | |
| CN113172781A (en) | Cutting method of ultrathin wafer | |
| CN111564367B (en) | Method for processing wafer cracking abnormity before wafer grinding | |
| CN111900081B (en) | Cutting method of silicon-based LED chip | |
| CN111633479A (en) | Method for repairing scribing cutter for gallium arsenide wafer | |
| CN113172780B (en) | Scribing structure for silicon carbide cutting and online trimming method thereof | |
| CN111696968B (en) | Method for manufacturing semiconductor structure | |
| CN112549331B (en) | Square silicon ingot and preparation method thereof, silicon wafer and preparation method thereof | |
| CN113539956A (en) | Wafer processing method | |
| CN106392785A (en) | Sharpening method of blade for cutting GaAs-based LED chip | |
| CN216760403U (en) | Novel reduce electroplating scribing sword that collapses limit | |
| CN215988667U (en) | Film sticking table of wafer film sticking machine | |
| CN111092045A (en) | Novel GPP chip blue film processing method | |
| CN111599752B (en) | Cutting method | |
| KR20190000308A (en) | Method for processing a workpiece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210727 |