CN102376643A - Cutting method - Google Patents
Cutting method Download PDFInfo
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- CN102376643A CN102376643A CN201110222408XA CN201110222408A CN102376643A CN 102376643 A CN102376643 A CN 102376643A CN 201110222408X A CN201110222408X A CN 201110222408XA CN 201110222408 A CN201110222408 A CN 201110222408A CN 102376643 A CN102376643 A CN 102376643A
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- cutting
- preset lines
- cut
- cutting process
- cut apart
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Abstract
The invention provides a cutting method which enables the processing quality deterioration generated on a first cutting proposed line cut firstly to be reduced when a plurality of crossed first and second cutting proposed lines are cut. When cutting is carried out on the latticed first and second cutting proposed lines(2a, 2b) of a diving device region(3) of a cutting semi-conductor wafer(1), not every first cutting proposed line(2a) is cut in a first cutting process cutting the first cutting proposed lines(2a) firstly, at least adjacent first cutting proposed lines(2a) are jumped, namely, every two or every three first cutting proposed lines(2a) are cut, and then after the second cutting proposed lines(2b) are cut in a second cutting process, the surplus first cutting proposed lines(2a) are cut in a third cutting process.
Description
Technical field
The present invention relates to be suitable for the cutting process of use when utilizing cutting tip that laminal machined objects such as for example semiconductor wafer are cut and cutting apart.
Background technology
For example; In semiconductor device manufacturing process, at first, on the surface of the wafer that constitutes by silicon or GaAs semiconductors such as (GaAs); Being formed on the 1st side the upwardly extending a plurality of the 1st with clathrate cuts apart preset lines and cuts apart preset lines the 2nd side the upwardly extending a plurality of the 2nd of intersecting with the 1st direction; Then, the 1st cutting apart preset lines and the 2nd and cut apart preset lines and divide in the device area of the rectangle form, form a plurality of circuit elements based on IC or LSI etc. by these.Then, after the back side of grinding this wafer makes it be thinned to predetermined thickness, carry out along respectively cutting apart the cutting that preset lines is cut off device area, cut apart, thereby produce a plurality of devices (semiconductor chip) by a wafer.
Device as cut crystal; Known have a following topping machanism: (revolution per minute: the thickness that revolutions per) carries out high speed rotating is that the cutting tip about 30 μ m is cut into machined object, Yi Bian make this cutting tip and machined object relatively move on the direction of preset lines and cut (for example patent documentation 1) cutting apart with 30000rpm Yi Bian make.Cutting with this topping machanism under the situation of above-mentioned wafer, generally speaking, be employed in cut all the 1st cut apart preset lines after, cut all the 2nd cut apart preset lines order.
[patent documentation 1] japanese kokai publication hei 7-276183 communique
But; Under the situation of the cutting of carrying out wafer with said sequence; Observe a plurality of the 1st of initial cutting and cut apart preset lines and cut apart preset lines with a plurality of the 2nd of then cutting and compare, produces big shortcoming or generation than unfavorable conditions such as multiple crackses, the result causes the deterioration of processing quality sometimes.
Summary of the invention
The present invention In view of the foregoing accomplishes just; Its major technology problem is to provide a kind of cutting process; Make it possible to when cutting the cross one another a plurality of the 1st is cut apart preset lines and the 2nd and cut apart preset lines, reduce the deterioration of cutting apart the processing quality that produces on the preset lines in the 1st of initial cutting.
Cutting process of the present invention cuts machined object with cutting tip; This machined object have the 1st side the upwardly extending a plurality of the 1st cut apart preset lines and with the 1st cut apart the 2nd side the upwardly extending a plurality of the 2nd that preset lines intersects and cut apart preset lines; This cutting process is characterised in that; Have: the 1st cutting process, utilize said cutting tip, skip the adjacent the said the 1st at least and cut apart preset lines and cut a plurality of the 1st and cut apart preset lines; The 2nd cutting process after having implemented the 1st cutting process, utilizes said cutting tip to cut the said the 2nd and cuts apart preset lines; And the 3rd cutting process, after having implemented the 2nd cutting process, cutting the said the 1st of cutting the is not cut apart preset lines in said the 1st cutting process.
The present invention is following cutting process: in the 1st cutting process of preset lines is cut apart in initial cutting the 1st, do not cut all the 1st and cut apart preset lines; Cut apart preset lines and skip the adjacent the 1st at least; Promptly every at a distance from for example 1, or two article the 1st cut apart preset lines and cut; Then in the 2nd cutting process, cut the 2nd cut apart preset lines after, cutting the remaining the 1st is cut apart preset lines in the 3rd cutting process.
According to the present invention, can reduce the deterioration of cutting apart the processing quality that produces on the preset lines the 1st.As its reason, be because the size of the machined object that in the 1st cutting process, cuts out (with the 1st corresponding size of being cut off of width cut apart between the preset lines) compare begin from the end to cut successively all the 1st big when cutting apart preset lines.Thus, think, be difficult for cutting apart generation shortcoming and crackle on the preset lines the 1st owing to reduced the vibration that in cutting tip, produces.
The present invention comprises following mode: in said the 2nd cutting process; At least skipping the adjacent the said the 2nd cuts apart preset lines and cuts a plurality of the 2nd and cut apart preset lines; Then; After having implemented said the 3rd cutting process, as the 4th cutting process, cutting does not have the said the 2nd of cutting to cut apart preset lines in the 2nd cutting process.In this mode, the 2nd cuts apart preset lines also with the 1st to cut apart preset lines same, has realized the minimizing of the deterioration of processing quality owing to above-mentioned reason.
The said machined object of the present invention is not special to be limited, but for example can enumerate above-mentioned semiconductor wafer by formations such as silicon, GaAs (GaAs) or carborundum (SiC), the encapsulation of semiconductor product, pottery, glass, sapphire (A1
2O
3) type the inorganic material substrate, the various electronic units such as lcd driver of controlling and driving liquid crystal indicator require the various rapidoprints of micron-sized Working position precision etc.
According to the present invention, can play following effect: when cutting the cross one another a plurality of the 1st is cut apart preset lines and the 2nd and cut apart preset lines, can reduce the deterioration of cutting apart the processing quality that produces on the preset lines in the 1st of initial cutting.
Description of drawings
Fig. 1 illustrates the stereogram that cuts the state of semiconductor wafer (machined object) through the cutting process of an embodiment of the invention.
Fig. 2 is the plane graph of semiconductor wafer.
Fig. 3 is the plane graph of the 1st cutting process that the cutting process of an execution mode is shown.
Fig. 4 is the plane graph of the 2nd cutting process that the cutting process of an execution mode is shown.
Fig. 5 is the plane graph of the 3rd cutting process that the cutting process of an execution mode is shown.
Fig. 6 is the plane graph of the 1st cutting process that the cutting process of another embodiment of the present invention is shown.
Fig. 7 is the plane graph of the 2nd cutting process that the cutting process of another execution mode is shown.
Fig. 8 is the plane graph of the 3rd cutting process that the cutting process of another execution mode is shown.
Fig. 9 is the plane graph of the 4th cutting process that the cutting process of another execution mode is shown.
Label declaration
1: semiconductor wafer (machined object)
13: cutting tip
A: the 1st direction
2a: the 1st cuts apart preset lines
B: the 2nd direction
2b: the 2nd cuts apart preset lines
Embodiment
Below, with reference to description of drawings an embodiment of the invention.
(1) semiconductor wafer
Fig. 1 shows the cutting process that adopts an execution mode and utilizes the state of cutting tip 13 cuttings of cutting unit 10 as the semiconductor wafer (hereinafter to be referred as making wafer) of machined object.As shown in Figure 2, on the surface of wafer 1, cross one another a plurality of preset lines 2 of cutting apart form clathrate, and are formed with by these and cut apart the device area 3 that preset lines 2 is divided the rectangle that forms.
On the surface of each device area 3, be formed with the not shown electronic circuit that constitutes by IC or LSI etc.Divide device area 3 to cut apart preset lines 2 vertical each other in this execution mode.Here, will be in Fig. 2 go up the preset lines of cutting apart of extending and be made as the 1st and cut apart preset lines 2a, will go up the preset lines of cutting apart of extending in B direction (the 2nd direction) and be made as the 2nd and cut apart preset lines 2b and describe in A direction (the 1st direction).Be formed with the breach (notch) 4 of the V word shape of the semi-conductive crystal orientation of expression at the predetermined position of the side face of wafer 1.The 1st to cut apart A direction that preset lines 2a extends be the parallel direction of tangent line with part through notch 4, and the 2nd to cut apart the B direction that preset lines 2b extends be the direction vertical with the A direction.
(2) cutting unit
Across splicing tape 6 be supported on wafer 1 on the frame 5 make as the surface of machined surface towards above be maintained under the state that exposes on the maintenance platform 20 that is equipped on below the cutting unit 10.Keeping platform 20 can be that rotating shaft is rotated with vertical direction (Z direction), makes wafer 1 rotation through keeping platform 20 rotations.In addition, keep platform 20 on directions X, to move through not shown processing feed unit.
Utilize the cutting of the wafer 1 of cutting unit 10, promptly the 1st cut apart preset lines 2a and the 2nd and cut apart the cutting of preset lines 2b and carry out through following mode: at first, keep platform 20 rotations to make wafer 1 rotation through making, making the 1st, to cut apart preset lines 2a parallel with directions X.Then; Make on one side and keep platform 20 on the X2 direction, to move; The blade of the lower end of the cutting tip 13 that in Fig. 1, is rotated on the arrow C direction is cut from the end of the X2 side of wafer 1, gone forward side by side and exercise the processing feeding that cutting tip 13 relatively moves on the X1 direction.The processing direction of feed is made as certain orientation corresponding to the direction of rotation of cutting tip 13, is made as the X1 direction this moment.In addition, the index feed selection of cutting apart preset lines 2 to be cut off through cutting unit 10 is moved on the Y direction.
In addition, said here cutting except fully the cut-out of the thickness of through-wafer 1, also comprises and makes cutting tip 13 be cut into thickness groove processing midway from face side.Under the situation of groove processing, through being applied external force, cuts off wafer 1, finally cut.
(3) cutting process
Then, the order with the cutting process of execution mode cutting wafer 1 is described.
(3-1) the 1st cutting process
At first carry out cutting apart the 1st cutting process of preset lines 2a through cutting tip 13 cuttings the 1st of above-mentioned cutting unit 10; But this moment; Not that preset lines 2a is cut apart in cutting all the 1st, cut apart preset lines 2a and cut a plurality of the 1st and cut apart preset lines 2a but skip the 1st adjacent more than 1 at least.For example, shown in the solid arrow of Fig. 3, whenever cut apart preset lines 2a and come to cut apart the cutting that preset lines 2a implements cutting tip 13 incisions the 1st are cut apart preset lines 2a a plurality of the 1st at a distance from 1.
(3-2) the 2nd cutting process
Then, making above-mentioned maintenance platform 20 half-twists that keep wafer 1 make the 2nd, to cut apart preset lines 2b parallel with the processing direction of feed of cutting tip 13, shown in the single-point line arrow of Fig. 4, cuts all the 2nd with cutting tip 13 and cut apart preset lines 2b.
(3-3) the 3rd cutting process
Then, make keep platform 20 half-twists to make the 1st again to cut apart preset lines 2a parallel with the processing direction of feed of cutting tip 13.And shown in the heavy line arrow of Fig. 5, cutting not the remaining the 1st of cutting the is not cut apart preset lines 2a in the 1st cutting process.
Through all the 1st the cutting apart preset lines 2a and the 2nd and cut apart preset lines 2b of above operation cutting, thereby wafer 1 is cut into device area 3 (semiconductor chip) one by one.According to the cutting process of an above-mentioned execution mode, in the 1st cutting process, cut out wafer 1 and the size of the cutting plate that is split to form (with the 1st corresponding size of being cut off of width cut apart between the preset lines 2a) bigger when cutting apart preset lines 2a than begin to cut successively all the 1st from the end.Thus, reduce the vibration that in cutting tip 13, produces, therefore produce shortcoming and crackle on the preset lines 2a with comparing to be difficult for cutting apart in the past the 1st through the friction of wafer 1 from contact.Its result reduces the deterioration of cutting apart the processing quality that produces on the preset lines 2a the 1st.
Therefore in addition, in the 2nd cutting process,, cut object and diminish in appearance, cut apart preset lines 2b so can cut the 2nd with good processing quality because wafer 1 is split into a plurality ofly in the 1st cutting process.And the such the 1st cuts apart preset lines 2a and the 2nd cuts apart the processing quality of preset lines 2b and all improves, and therefore can access the device with well processed quality.
(4) cutting process of another execution mode
Then, the cutting process to another embodiment of the present invention describes.
(4-1) the 1st cutting process
Same with an above-mentioned execution mode, skip the 1st adjacent more than 1 and cut apart preset lines 2a and utilize cutting tip 13 cutting a plurality of the 1st to cut apart preset lines 2a.The solid arrow of Fig. 6 be illustrated in cut in the 1st cutting process the 1st cut apart preset lines 2a example, at this moment, cut the 1st with the mode that exists 3 article the 1st to cut apart preset lines 2a betwixt and cut apart preset lines 2a.
(4-2) the 2nd cutting process
Then, making above-mentioned maintenance platform 20 half-twists that keep wafer 1 make the 2nd, to cut apart preset lines 2b parallel with the processing direction of feed of cutting tip 13, skips the adjacent the 2nd at least and cut apart preset lines 2b and cut a plurality of the 2nd and cut apart preset lines 2b.For example shown in the single-point of Fig. 7 line arrow, whenever cut apart preset lines 2b and cut a plurality of the 2nd and cut apart preset lines 2b at a distance from 1.
(4-3) the 3rd cutting process
Then, make keep platform 20 half-twists to make the 1st again to cut apart preset lines 2a parallel with the processing direction of feed of cutting tip 13.And shown in the heavy line arrow of Fig. 8, cutting not the remaining the 1st of cutting the is not cut apart preset lines 2a in the 1st cutting process.
(4-4) the 4th cutting process
Then, make keep platform 20 once more half-twist make the 2nd to cut apart preset lines 2b parallel with the processing direction of feed of cutting tip 13.And shown in the thick single-point line arrow of Fig. 9, cutting the remaining the 2nd of cutting the is not cut apart preset lines 2b in the 2nd cutting process.
Through all the 1st the cutting apart preset lines 2a and the 2nd and cut apart preset lines 2b of above operation cutting, thereby wafer 1 is cut into device area 3 (semiconductor chip) one by one.This cutting process is except the cutting process of an execution mode before; The 2nd cuts apart preset lines 2b also cuts apart preset lines 2a and is divided into two stages (the 2nd cutting process and the 4th cutting process) equally and cuts with the 1st, and therefore the 2nd cuts apart preset lines 2b and also cut apart preset lines 2a and can access the such effect of deterioration that reduces processing quality equally with the 1st.
Claims (2)
1. cutting process; Cut machined object with cutting tip; This machined object have the 1st side the upwardly extending a plurality of the 1st cut apart preset lines and with the 1st cut apart the 2nd side the upwardly extending a plurality of the 2nd that preset lines intersects and cut apart preset lines, this cutting process is characterised in that to have:
The 1st cutting process utilizes said cutting tip, skips the adjacent the said the 1st at least and cuts apart preset lines and cut a plurality of the 1st and cut apart preset lines;
The 2nd cutting process after having implemented the 1st cutting process, utilizes said cutting tip to cut the said the 2nd and cuts apart preset lines; And
The 3rd cutting process, after having implemented the 2nd cutting process, cutting does not have the said the 1st of cutting to cut apart preset lines in said the 1st cutting process.
2. cutting process according to claim 1 is characterized in that,
In said the 2nd cutting process, skip the adjacent the said the 2nd at least and cut apart preset lines and cut a plurality of the 2nd and cut apart preset lines,
Then, after having implemented said the 3rd cutting process, as the 4th cutting process, cutting does not have the said the 2nd of cutting to cut apart preset lines in the 2nd cutting process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-175197 | 2010-08-04 | ||
| JP2010175197A JP5657302B2 (en) | 2010-08-04 | 2010-08-04 | Cutting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102376643A true CN102376643A (en) | 2012-03-14 |
| CN102376643B CN102376643B (en) | 2016-02-10 |
Family
ID=45795027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110222408.XA Active CN102376643B (en) | 2010-08-04 | 2011-08-04 | Cutting process |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5657302B2 (en) |
| CN (1) | CN102376643B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103358409A (en) * | 2012-04-09 | 2013-10-23 | 株式会社迪思科 | Cutting device |
| CN104097268A (en) * | 2013-04-08 | 2014-10-15 | 株式会社迪思科 | Dividing method for disk-shaped workpiece |
| CN106626107A (en) * | 2016-11-25 | 2017-05-10 | 中国电子科技集团公司第五十五研究所 | Wheel type diamond knife scribing method |
| CN109037102A (en) * | 2018-07-16 | 2018-12-18 | 扬州晶新微电子有限公司 | A kind of dicing method of semiconductor device chip wafer |
| CN113172781A (en) * | 2021-04-07 | 2021-07-27 | 郑州磨料磨具磨削研究所有限公司 | Cutting method of ultrathin wafer |
| CN115122209A (en) * | 2022-07-01 | 2022-09-30 | 沈阳和研科技有限公司 | Dicing method for anisotropic wafer |
| CN115122209B (en) * | 2022-07-01 | 2024-05-28 | 沈阳和研科技股份有限公司 | Dicing method for anisotropic wafer |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6115423B2 (en) * | 2013-09-18 | 2017-04-19 | 株式会社村田製作所 | Substrate dividing method |
| JP7043135B2 (en) * | 2018-05-15 | 2022-03-29 | 株式会社ディスコ | Wafer processing method |
| JP7034551B2 (en) * | 2018-05-15 | 2022-03-14 | 株式会社ディスコ | Processing method of work piece |
| JP2020202197A (en) * | 2019-06-05 | 2020-12-17 | 株式会社ディスコ | Processing method |
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| US20040115903A1 (en) * | 2002-01-28 | 2004-06-17 | Kazuma Sekiya | Method of processing a semiconductor wafer |
| US20050212092A1 (en) * | 2004-03-26 | 2005-09-29 | Nec Electronics Corporation | Wafer, semiconductor chip, and semiconductor device manufacturing method |
| CN1938826A (en) * | 2004-03-30 | 2007-03-28 | 浜松光子学株式会社 | Laser processing method and object to be processed |
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| JP2592489B2 (en) * | 1988-03-18 | 1997-03-19 | 富士通株式会社 | Wafer dicing method |
| CN101297393B (en) * | 2005-11-24 | 2010-05-12 | 株式会社瑞萨科技 | Fabricating method for semiconductor device |
| JP2011151186A (en) * | 2010-01-21 | 2011-08-04 | Toshiba Corp | Method of dividing semiconductor wafer |
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| US20040115903A1 (en) * | 2002-01-28 | 2004-06-17 | Kazuma Sekiya | Method of processing a semiconductor wafer |
| US20050212092A1 (en) * | 2004-03-26 | 2005-09-29 | Nec Electronics Corporation | Wafer, semiconductor chip, and semiconductor device manufacturing method |
| CN1938826A (en) * | 2004-03-30 | 2007-03-28 | 浜松光子学株式会社 | Laser processing method and object to be processed |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103358409A (en) * | 2012-04-09 | 2013-10-23 | 株式会社迪思科 | Cutting device |
| CN103358409B (en) * | 2012-04-09 | 2017-06-13 | 株式会社迪思科 | Topping machanism |
| CN104097268A (en) * | 2013-04-08 | 2014-10-15 | 株式会社迪思科 | Dividing method for disk-shaped workpiece |
| CN106626107A (en) * | 2016-11-25 | 2017-05-10 | 中国电子科技集团公司第五十五研究所 | Wheel type diamond knife scribing method |
| CN109037102A (en) * | 2018-07-16 | 2018-12-18 | 扬州晶新微电子有限公司 | A kind of dicing method of semiconductor device chip wafer |
| CN113172781A (en) * | 2021-04-07 | 2021-07-27 | 郑州磨料磨具磨削研究所有限公司 | Cutting method of ultrathin wafer |
| CN115122209A (en) * | 2022-07-01 | 2022-09-30 | 沈阳和研科技有限公司 | Dicing method for anisotropic wafer |
| CN115122209B (en) * | 2022-07-01 | 2024-05-28 | 沈阳和研科技股份有限公司 | Dicing method for anisotropic wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5657302B2 (en) | 2015-01-21 |
| CN102376643B (en) | 2016-02-10 |
| JP2012038797A (en) | 2012-02-23 |
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