CN102376643B - Cutting process - Google Patents
Cutting process Download PDFInfo
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- CN102376643B CN102376643B CN201110222408.XA CN201110222408A CN102376643B CN 102376643 B CN102376643 B CN 102376643B CN 201110222408 A CN201110222408 A CN 201110222408A CN 102376643 B CN102376643 B CN 102376643B
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- preset lines
- cutting
- segmentation preset
- cutting process
- cut
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- 238000005520 cutting process Methods 0.000 title claims abstract description 132
- 230000011218 segmentation Effects 0.000 claims abstract description 90
- 238000012545 processing Methods 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 230000006866 deterioration Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 34
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a kind of cutting process, making it possible to when cutting cross one another multiple 1st segmentation preset lines and the 2nd segmentation preset lines, reduce the deterioration of the processing quality produced in initial 1st segmentation preset lines of cutting.When the cancellate 1st and the 2nd segmentation preset lines (2a, 2b) of the division device area (3) cutting semiconductor wafer (1) is cut, the 1st all segmentations preset lines (2a) is not cut initial cutting in the 1st cutting process of the 1st segmentation preset lines (2a), and at least skip the 1st adjacent segmentation preset lines (2a), namely cut every such as 1 or two, then, after cutting the 2nd segmentation preset lines (2b) in the 2nd cutting process, in the 3rd cutting process, remaining 1st segmentation preset lines (2a) is cut.
Description
Technical field
The present invention relates to the cutting process being suitable for using when utilizing cutting tip cut laminal machined objects such as such as semiconductor wafers and split.
Background technology
Such as, in semiconductor device manufacturing process, first, on the surface of the wafer be made up of semiconductors such as silicon or GaAs (GaAs), be formed in multiple 1st segmentation preset lines that the 1st direction extends and the extend on the 2nd direction intersected with the 1st direction the multiple 2nd with clathrate and split preset lines, then, in the device area of the rectangle divided by these the 1st segmentation preset lines and the 2nd segmentation preset lines, the multiple circuit elements based on IC or LSI etc. are formed.Then, after the back side of this wafer of grinding makes it be thinned to predetermined thickness, carry out the cutting cut off by device area along each segmentation preset lines, split, thus produce multiple device (semiconductor chip) by one piece of wafer.
As the device of cut crystal, be known to following topping machanism: make the thickness carrying out High Rotation Speed with 30000rpm (revolutionperminute: revolutions per) be that the cutting tip of about 30 μm is cut into machined object, while make the relative movement carry out cutting (such as patent documentation 1) on the direction of segmentation preset lines of this cutting tip and machined object.When cutting above-mentioned wafer with this topping machanism, generally speaking, adopt after having cut the 1st all segmentation preset lines, cut the order of all 2nd segmentation preset lines.
[patent documentation 1] Japanese Unexamined Patent Publication 7-276183 publication
But, when carrying out the cutting of wafer with said sequence, observe initial multiple 1st segmentation preset lines and the then cut the multiple 2nd of cutting to split compared with preset lines, produce large shortcoming or produce the comparatively unfavorable condition such as multiple cracks, result causes the deterioration of processing quality sometimes.
Summary of the invention
The present invention completes just in view of the foregoing, its main technical task is to provide a kind of cutting process, making it possible to when cutting cross one another multiple 1st segmentation preset lines and the 2nd segmentation preset lines, reducing the deterioration of the processing quality produced in initial 1st segmentation preset lines of cutting.
Cutting process cutting tip of the present invention cuts machined object, this machined object have multiple 1st segmentation preset lines of extending on the 1st direction and with the 1st split the 2nd direction that preset lines intersects extends the multiple 2nd split preset lines, the feature of this cutting process is, have: the 1st cutting process, utilize described cutting tip, at least skip adjacent described 1st segmentation preset lines to cut multiple 1st segmentation preset lines; 2nd cutting process, after implementing the 1st cutting process, utilizes described cutting tip to cut whole described 2nd segmentation preset lines; And the 3rd cutting process, after implementing the 2nd cutting process, cut the described 1st segmentation preset lines of not cutting in described 1st cutting process.
According to the present invention, the deterioration of the processing quality produced in the 1st segmentation preset lines can be reduced.As its reason, the be that (to split size corresponding to width between preset lines with the cut off the 1st) because the size of the machined object that cuts out in the 1st cutting process than cutting successively from end all the 1st is large when splitting preset lines.Thus, think owing to decreasing the vibration produced in cutting tip, not easily in the 1st segmentation preset lines, produce shortcoming and crackle.
The present invention comprises with under type: in described 2nd cutting process, at least skip adjacent described 2nd segmentation preset lines to cut multiple 2nd segmentation preset lines, then, after implementing described 3rd cutting process, as the 4th cutting process, cut the described 2nd segmentation preset lines of not cutting in the 2nd cutting process.In this approach, it is same that the 2nd segmentation preset lines also splits preset lines with the 1st, achieves the minimizing of the deterioration of processing quality due to above-mentioned reason.
The said machined object of the present invention is not particularly limited, but such as can enumerate above-mentioned be made up of silicon, GaAs (GaAs) or carborundum (SiC) etc. semiconductor wafer, semiconductor product encapsulation, pottery, glass, sapphire (A1
2o
3) inorganic material substrate of class, control to drive the various electronic units such as the lcd driver of liquid crystal indicator, require the various rapidoprints etc. of micron-sized Working position precision.
According to the present invention, following effect can being played: when cutting cross one another multiple 1st segmentation preset lines and the 2nd segmentation preset lines, the deterioration of the processing quality produced in initial 1st segmentation preset lines of cutting can be reduced.
Accompanying drawing explanation
Fig. 1 illustrates that the cutting process by an embodiment of the invention cuts the stereogram of the state of semiconductor wafer (machined object).
Fig. 2 is the plane graph of semiconductor wafer.
Fig. 3 is the plane graph of the 1st cutting process of the cutting process that an execution mode is shown.
Fig. 4 is the plane graph of the 2nd cutting process of the cutting process that an execution mode is shown.
Fig. 5 is the plane graph of the 3rd cutting process of the cutting process that an execution mode is shown.
Fig. 6 is the plane graph of the 1st cutting process of the cutting process that another embodiment of the present invention is shown.
Fig. 7 is the plane graph of the 2nd cutting process of the cutting process that another execution mode is shown.
Fig. 8 is the plane graph of the 3rd cutting process of the cutting process that another execution mode is shown.
Fig. 9 is the plane graph of the 4th cutting process of the cutting process that another execution mode is shown.
Label declaration
1: semiconductor wafer (machined object)
13: cutting tip
A: the 1 direction
2a: the 1 segmentation preset lines
B: the 2 direction
2b: the 2 segmentation preset lines
Embodiment
Hereinafter, with reference to the accompanying drawings of an embodiment of the invention.
(1) semiconductor wafer
Fig. 1 shows the cutting process of an employing execution mode and utilizes the cutting tip 13 of cutting unit 10 to cut the state of the semiconductor wafer (hereinafter referred to as wafer) as machined object.As shown in Figure 2, on the surface of wafer 1, cross one another multiple segmentation preset lines 2 is formed as clathrate, and is formed with the device area 3 of the rectangle divided by these segmentation preset lines 2.
On the surface of each device area 3, be formed with the not shown electronic circuit be made up of IC or LSI etc.The segmentation preset lines 2 dividing device area 3 is mutually vertical in the present embodiment., the 1st segmentation preset lines 2a being set in A direction (the 1st direction) upper segmentation preset lines extended in fig. 2 herein, being described being set to the 2nd segmentation preset lines 2b in B direction (the 2nd direction) upper segmentation preset lines extended.The breach (notch) 4 of the V shape of the crystal orientation representing semiconductor is formed at the predetermined position of the side face of wafer 1.The A direction that 1st segmentation preset lines 2a extends is the direction parallel with the tangent line of the part by notch 4, and the B direction that the 2nd segmentation preset lines 2b extends is the direction vertical with A direction.
Carry out grinding back surface to wafer 1 and it is thinningly machined to predetermined thickness (such as about 100 μm), row of going forward side by side is carried out cutting by above-mentioned cutting unit 10 along segmentation preset lines 2 thus device area 3 is divided into the cutting of device (semiconductor chip).As shown in Figure 1, across splicing tape 6 by wafer 1 in be concentrically supported on integratedly frame 5 inner side state under wafer 1 is cut.Splicing tape 6 for one side be bonding plane, the back side of pasting frame 5 and wafer 1 on its bonding plane, carrys out transfer wafers 1 by carriage 5.
(2) cutting unit
Cutting unit 10 shown in Fig. 1 is equipped on not shown topping machanism, is have the structure with lower component: cylindric collar bush 11, be rotatably supported on the main shaft 12 in collar bush and be fixed in the cutting tip 13 of front end of main shaft 12.In collar bush 11, be accommodated with the motor (not shown) that driving main shaft 12 rotates.Cutting unit 10 and Y-direction arrange main shaft 12 abreast, above move in vertical direction (Z-direction) by the not shown unit that moves up and down, and upper mobile in the axis (Y-direction) of main shaft 12 by index feed unit.
Be supported on wafer 1 on frame 5 across splicing tape 6 make to be maintained under the state exposed upward as the surface of machined surface in the holding station 20 be disposed in below cutting unit 10.Holding station 20 can rotate for rotating shaft with vertical direction (Z-direction), is rotated and make wafer 1 rotation by holding station 20.In addition, holding station 20 moves in the X direction by not shown processing feed unit.
Utilize the cutting of the wafer 1 of cutting unit 10, namely the 1st segmentation preset lines 2a and the 2nd segmentation preset lines 2b cut through as under type is carried out: first, by make holding station 20 rotate make wafer 1 rotation, make the 1st segmentation preset lines 2a parallel with X-direction.Then, while make holding station 20 move up in X2 side, while make blade arrow C direction in FIG being carried out the lower end of the cutting tip 13 rotated cut from the end of the X2 side of wafer 1, go forward side by side and exercise the processing feeding of cutting tip 13 relative movement on X1 direction.The direction of rotation that processing direction of feed corresponds to cutting tip 13 is set to certain orientation, is now set to X1 direction.In addition, the selection by making the index feed of cutting unit 10 movement in the Y direction carry out segmentation preset lines 2 to be cut off.
In addition, said cutting herein, except the cut-out completely of the thickness of through-wafer 1, also comprises and makes cutting tip 13 be cut into the slot machining of thickness midway from face side.When slot machining, by applying external force to cut off to wafer 1, finally cut.
(3) cutting process
Then, the order of cutting wafer 1 with the cutting process of an execution mode is described.
(3-1) the 1st cutting process
First the 1st cutting process being cut the 1st segmentation preset lines 2a by the cutting tip 13 of above-mentioned cutting unit 10 is carried out, but now, not cut the 1st all segmentation preset lines 2a, but at least skip adjacent the 1st segmentation preset lines 2a of more than 1 article to cut multiple 1st segmentation preset lines 2a.Such as, as shown in the solid arrow of Fig. 3, every 1 article of segmentation preset lines 2a, cutting cutting tip 13 being cut the 1st segmentation preset lines 2a is implemented to multiple 1st segmentation preset lines 2a.
(3-2) the 2nd cutting process
Then, make above-mentioned holding station 20 half-twist of maintenance wafer 1 make the 2nd segmentation preset lines 2b parallel with the processing direction of feed of cutting tip 13, as shown in the single dotted broken line arrow of Fig. 4, cut the 2nd all segmentation preset lines 2b with cutting tip 13.
(3-3) the 3rd cutting process
Then, holding station 20 half-twist is made again to make the 1st segmentation preset lines 2a parallel with the processing direction of feed of cutting tip 13.Further, as shown in the heavy solid line arrows of Fig. 5, the 1st remaining segmentation preset lines 2a do not cut in the 1st cutting process is cut.
Cut the 1st all segmentation preset lines 2a and the 2nd segmentation preset lines 2b by above operation, thus wafer 1 is cut into device area 3 (semiconductor chip) one by one.According to the cutting process of an above-mentioned execution mode, in the 1st cutting process, cut out wafer 1 and 1st when splitting preset lines 2a large more all than cutting successively from end of the size of the cutting plate be split to form (splitting size corresponding to width between preset lines 2a with the cut off the 1st).Thus, reduced the vibration produced in cutting tip 13 by the friction of the wafer 1 from contact, therefore compared with the past not easily generation on the 1st segmentation preset lines 2a is short of and crackle.Its result, reduces the deterioration of the processing quality produced on the 1st segmentation preset lines 2a.
In addition, in the 2nd cutting process, because wafer 1 is split into multiple in the 1st cutting process, therefore cut object and diminish in appearance, so the 2nd segmentation preset lines 2b can be cut with good processing quality.Further, the processing quality of such 1st segmentation preset lines 2a and the 2nd segmentation preset lines 2b all improves, therefore, it is possible to obtain the device with well processed quality.
(4) cutting process of another execution mode
Then, the cutting process of another embodiment of the present invention is described.
(4-1) the 1st cutting process
Same with an above-mentioned execution mode, skip adjacent the 1st segmentation preset lines 2a of more than 1 article and cut multiple 1st segmentation preset lines 2a to utilize cutting tip 13.The solid arrow of Fig. 6 represents the example of the 1st segmentation preset lines 2a cut in the 1st cutting process, now, cuts the 1st segmentation preset lines 2a in the mode that there is 3 article of the 1st segmentation preset lines 2a betwixt.
(4-2) the 2nd cutting process
Then, make above-mentioned holding station 20 half-twist of maintenance wafer 1 make the 2nd segmentation preset lines 2b parallel with the processing direction of feed of cutting tip 13, at least skip the 2nd adjacent segmentation preset lines 2b to cut multiple 2nd segmentation preset lines 2b.Such as shown in the single dotted broken line arrow of Fig. 7, cut multiple 2nd segmentation preset lines 2b every 1 article of segmentation preset lines 2b.
(4-3) the 3rd cutting process
Then, holding station 20 half-twist is made again to make the 1st segmentation preset lines 2a parallel with the processing direction of feed of cutting tip 13.Further, as shown in the heavy solid line arrows of Fig. 8, the 1st remaining segmentation preset lines 2a do not cut in the 1st cutting process is cut.
(4-4) the 4th cutting process
Then, make holding station 20 again half-twist make the 2nd segmentation preset lines 2b parallel with the processing direction of feed of cutting tip 13.Further, as shown in the thick single dotted broken line arrow of Fig. 9, the 2nd remaining segmentation preset lines 2b do not cut in the 2nd cutting process is cut.
Cut the 1st all segmentation preset lines 2a and the 2nd segmentation preset lines 2b by above operation, thus wafer 1 is cut into device area 3 (semiconductor chip) one by one.This cutting process is except the cutting process of the execution mode of before, 2nd segmentation preset lines 2b also split with the 1st that preset lines 2a is same is divided into two stages (the 2nd cutting process and the 4th cutting process) to cut, and therefore the 2nd splits preset lines 2b and also split the such effect of the same deterioration that can be reduced processing quality of preset lines 2a with the 1st.
Claims (1)
1. a cutting process, machined object is cut with cutting tip, this machined object have multiple 1st segmentation preset lines of extending on the 1st direction and with the 1st split the 2nd direction that preset lines intersects extends the multiple 2nd split preset lines, the feature of this cutting process is to have:
1st cutting process, utilizes described cutting tip, at least skips adjacent described 1st segmentation preset lines to cut multiple 1st segmentation preset lines;
2nd cutting process, after implementing the 1st cutting process, utilizes described cutting tip to cut whole described 2nd segmentation preset lines; And
3rd cutting process, after implementing the 2nd cutting process, utilizes described cutting tip to cut the described 1st segmentation preset lines of not cutting in described 1st cutting process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010175197A JP5657302B2 (en) | 2010-08-04 | 2010-08-04 | Cutting method |
| JP2010-175197 | 2010-08-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102376643A CN102376643A (en) | 2012-03-14 |
| CN102376643B true CN102376643B (en) | 2016-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110222408.XA Active CN102376643B (en) | 2010-08-04 | 2011-08-04 | Cutting process |
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| JP (1) | JP5657302B2 (en) |
| CN (1) | CN102376643B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5975703B2 (en) * | 2012-04-09 | 2016-08-23 | 株式会社ディスコ | Cutting equipment |
| JP6084883B2 (en) * | 2013-04-08 | 2017-02-22 | 株式会社ディスコ | Method for dividing circular plate |
| JP6115423B2 (en) * | 2013-09-18 | 2017-04-19 | 株式会社村田製作所 | Substrate dividing method |
| CN106626107A (en) * | 2016-11-25 | 2017-05-10 | 中国电子科技集团公司第五十五研究所 | Wheel type diamond knife scribing method |
| JP7034551B2 (en) * | 2018-05-15 | 2022-03-14 | 株式会社ディスコ | Processing method of work piece |
| JP7043135B2 (en) * | 2018-05-15 | 2022-03-29 | 株式会社ディスコ | Wafer processing method |
| CN109037102A (en) * | 2018-07-16 | 2018-12-18 | 扬州晶新微电子有限公司 | A kind of dicing method of semiconductor device chip wafer |
| JP2020202197A (en) * | 2019-06-05 | 2020-12-17 | 株式会社ディスコ | Processing method |
| CN113172781A (en) * | 2021-04-07 | 2021-07-27 | 郑州磨料磨具磨削研究所有限公司 | Cutting method of ultrathin wafer |
| CN115122209B (en) * | 2022-07-01 | 2024-05-28 | 沈阳和研科技股份有限公司 | Dicing method for anisotropic wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938826A (en) * | 2004-03-30 | 2007-03-28 | 浜松光子学株式会社 | Laser processing method and object to be processed |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2592489B2 (en) * | 1988-03-18 | 1997-03-19 | 富士通株式会社 | Wafer dicing method |
| JP2003224087A (en) * | 2002-01-28 | 2003-08-08 | Disco Abrasive Syst Ltd | Method for machining semiconductor wafer |
| JP4550457B2 (en) * | 2004-03-26 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
| WO2007060724A1 (en) * | 2005-11-24 | 2007-05-31 | Renesas Technology Corp. | Method for fabricating semiconductor device |
| JP2011151186A (en) * | 2010-01-21 | 2011-08-04 | Toshiba Corp | Method of dividing semiconductor wafer |
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- 2010-08-04 JP JP2010175197A patent/JP5657302B2/en active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938826A (en) * | 2004-03-30 | 2007-03-28 | 浜松光子学株式会社 | Laser processing method and object to be processed |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102376643A (en) | 2012-03-14 |
| JP2012038797A (en) | 2012-02-23 |
| JP5657302B2 (en) | 2015-01-21 |
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