CN102097461A - 实质上具有晶格匹配的半导体材料及其制造方法 - Google Patents
实质上具有晶格匹配的半导体材料及其制造方法 Download PDFInfo
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- CN102097461A CN102097461A CN2010105427626A CN201010542762A CN102097461A CN 102097461 A CN102097461 A CN 102097461A CN 2010105427626 A CN2010105427626 A CN 2010105427626A CN 201010542762 A CN201010542762 A CN 201010542762A CN 102097461 A CN102097461 A CN 102097461A
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US25994809P | 2009-11-10 | 2009-11-10 | |
US61/259,948 | 2009-11-10 |
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CN102097461A true CN102097461A (zh) | 2011-06-15 |
CN102097461B CN102097461B (zh) | 2013-07-31 |
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CN2010105427626A Active CN102097461B (zh) | 2009-11-10 | 2010-11-10 | 实质上具有晶格匹配的半导体材料及其制造方法 |
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US (1) | US20110108854A1 (zh) |
CN (1) | CN102097461B (zh) |
TW (1) | TW201133832A (zh) |
Cited By (11)
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CN102856173A (zh) * | 2012-09-29 | 2013-01-02 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜及其制备方法、阵列基板、显示装置 |
CN103378247A (zh) * | 2012-04-25 | 2013-10-30 | 清华大学 | 外延结构体 |
CN103378239A (zh) * | 2012-04-25 | 2013-10-30 | 清华大学 | 外延结构体 |
CN103378223A (zh) * | 2012-04-25 | 2013-10-30 | 清华大学 | 外延结构体的制备方法 |
CN103378236A (zh) * | 2012-04-25 | 2013-10-30 | 清华大学 | 具有微构造的外延结构体 |
CN104393128A (zh) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | 一种使用SiC衬底的氮化物LED外延结构及其制备方法 |
CN105280745A (zh) * | 2014-06-05 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAs/Ge四结级联太阳电池及其制作方法 |
CN105322007A (zh) * | 2015-07-20 | 2016-02-10 | 苏州能讯高能半导体有限公司 | 基于金刚石衬底的氮化物结构、制备方法及半导体器件 |
CN105452162A (zh) * | 2013-07-30 | 2016-03-30 | 美光科技公司 | 半导电石墨烯结构、形成此类结构的方法及包含此类结构的半导体装置 |
CN109292498A (zh) * | 2018-09-28 | 2019-02-01 | 南安市罗兴工业设计有限公司 | 一种具有滤碳处理的薄膜粗化膜卷一体机 |
CN113380639A (zh) * | 2021-05-26 | 2021-09-10 | 西安交通大学 | 一种原子级离子清洁活化低温键合装置及方法 |
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US20100218801A1 (en) * | 2008-07-08 | 2010-09-02 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Planes and Associated Methods |
US20100055464A1 (en) * | 2008-07-08 | 2010-03-04 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Planes and Associated Methods |
US20110163298A1 (en) * | 2010-01-04 | 2011-07-07 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Devices |
CN102134469A (zh) * | 2010-01-26 | 2011-07-27 | 宋健民 | 含六方氮化硼的导热绝缘胶 |
FR2998092B1 (fr) * | 2012-11-13 | 2014-11-07 | Commissariat Energie Atomique | Interposeur en graphene et procede de fabrication d'un tel interposeur |
US8754512B1 (en) * | 2012-12-05 | 2014-06-17 | Delphi Technologies, Inc. | Atomic level bonding for electronics packaging |
US8916451B2 (en) | 2013-02-05 | 2014-12-23 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
US10957816B2 (en) | 2013-02-05 | 2021-03-23 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
US9059013B2 (en) | 2013-03-21 | 2015-06-16 | International Business Machines Corporation | Self-formation of high-density arrays of nanostructures |
CN115298807A (zh) * | 2020-03-23 | 2022-11-04 | 三菱电机株式会社 | 氮化物半导体装置及其制造方法 |
US11961837B2 (en) * | 2021-01-08 | 2024-04-16 | The Board Of Trustees Of The Leland Stanford Junior University | Semiconductor apparatuses and methods involving diamond and GaN-based FET structures |
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