CN102097308A - 一种侧墙回刻方法 - Google Patents
一种侧墙回刻方法 Download PDFInfo
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- CN102097308A CN102097308A CN2009102014900A CN200910201490A CN102097308A CN 102097308 A CN102097308 A CN 102097308A CN 2009102014900 A CN2009102014900 A CN 2009102014900A CN 200910201490 A CN200910201490 A CN 200910201490A CN 102097308 A CN102097308 A CN 102097308A
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CN2009102014900A CN102097308A (zh) | 2009-12-15 | 2009-12-15 | 一种侧墙回刻方法 |
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CN2009102014900A CN102097308A (zh) | 2009-12-15 | 2009-12-15 | 一种侧墙回刻方法 |
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CN102097308A true CN102097308A (zh) | 2011-06-15 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709314A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 物理隔离的硅纳米晶双位存储结构及其制备方法 |
CN103000520A (zh) * | 2011-09-09 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Mos表面栅极侧壁层的刻蚀方法 |
CN103183307A (zh) * | 2011-12-28 | 2013-07-03 | 中国科学院微电子研究所 | 张应力 LPCVD SiO2膜的制造方法 |
CN104022030A (zh) * | 2013-03-01 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | 间隙壁去除方法 |
CN104051340B (zh) * | 2013-03-13 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | 一种采用应力接近技术的晶体管的制作方法 |
CN104218001B (zh) * | 2013-05-30 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | 闪存栅极的制造方法 |
-
2009
- 2009-12-15 CN CN2009102014900A patent/CN102097308A/zh active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103000520A (zh) * | 2011-09-09 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Mos表面栅极侧壁层的刻蚀方法 |
CN103000520B (zh) * | 2011-09-09 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | Mos表面栅极侧壁层的刻蚀方法 |
CN103183307A (zh) * | 2011-12-28 | 2013-07-03 | 中国科学院微电子研究所 | 张应力 LPCVD SiO2膜的制造方法 |
CN103183307B (zh) * | 2011-12-28 | 2016-04-20 | 中国科学院微电子研究所 | 张应力LPCVD SiO2膜的制造方法 |
CN102709314A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 物理隔离的硅纳米晶双位存储结构及其制备方法 |
CN104022030A (zh) * | 2013-03-01 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | 间隙壁去除方法 |
CN104022030B (zh) * | 2013-03-01 | 2017-07-11 | 中芯国际集成电路制造(上海)有限公司 | 间隙壁去除方法 |
CN104051340B (zh) * | 2013-03-13 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | 一种采用应力接近技术的晶体管的制作方法 |
CN104218001B (zh) * | 2013-05-30 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | 闪存栅极的制造方法 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20110615 |