CN102089974B - 用于优化电路中的频率性能的输入/输出模块的装置和方法 - Google Patents

用于优化电路中的频率性能的输入/输出模块的装置和方法 Download PDF

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CN102089974B
CN102089974B CN200980127282.9A CN200980127282A CN102089974B CN 102089974 B CN102089974 B CN 102089974B CN 200980127282 A CN200980127282 A CN 200980127282A CN 102089974 B CN102089974 B CN 102089974B
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pads
integrated circuit
signal
circuit die
voltage
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CN102089974A (zh
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林谷
Y-F·林
S·特兰
P·克霍斯库
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Altera Corp
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Altera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5382—Adaptable interconnections, e.g. for engineering changes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
CN200980127282.9A 2008-07-13 2009-07-07 用于优化电路中的频率性能的输入/输出模块的装置和方法 Active CN102089974B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/172,247 US8138787B2 (en) 2008-07-13 2008-07-13 Apparatus and method for input/output module that optimizes frequency performance in a circuit
US12/172,247 2008-07-13
PCT/US2009/049822 WO2010008971A2 (en) 2008-07-13 2009-07-07 Apparatus and method for input/output module that optimizes frequency performance in a circuit

Publications (2)

Publication Number Publication Date
CN102089974A CN102089974A (zh) 2011-06-08
CN102089974B true CN102089974B (zh) 2015-08-12

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CN200980127282.9A Active CN102089974B (zh) 2008-07-13 2009-07-07 用于优化电路中的频率性能的输入/输出模块的装置和方法

Country Status (5)

Country Link
US (1) US8138787B2 (enExample)
EP (1) EP2311190A4 (enExample)
JP (1) JP5566381B2 (enExample)
CN (1) CN102089974B (enExample)
WO (1) WO2010008971A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201205427D0 (en) * 2012-03-28 2012-05-09 Yota Devices Ipr Ltd Display device and connector
KR20150026644A (ko) * 2013-09-03 2015-03-11 에스케이하이닉스 주식회사 반도체칩, 반도체칩 패키지 및 이를 포함하는 반도체시스템
US9503155B2 (en) * 2015-04-09 2016-11-22 Nxp B.V. Tuning asymmetry of a differential digital interface to cancel magnetic coupling
KR102777475B1 (ko) 2019-10-17 2025-03-10 에스케이하이닉스 주식회사 반도체 패키지

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1111824A (zh) * 1993-12-21 1995-11-15 株式会社东芝 半导体集成电路装置
US20030214344A1 (en) * 2002-05-20 2003-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device adaptable to plurality of types of packages
CN1819196A (zh) * 2005-01-27 2006-08-16 株式会社瑞萨科技 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路
CN1832165A (zh) * 2004-12-10 2006-09-13 因芬尼昂技术股份公司 双列存储器模块的堆叠式dram存储器芯片

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WO1992011701A2 (en) * 1990-12-18 1992-07-09 Vlsi Technology Inc. Reduction of noise on power and ground inputs to an integrated circuit
US5406607A (en) * 1994-02-24 1995-04-11 Convex Computer Corporation Apparatus, systems and methods for addressing electronic memories
US5604710A (en) * 1994-05-20 1997-02-18 Mitsubishi Denki Kabushiki Kaisha Arrangement of power supply and data input/output pads in semiconductor memory device
US5847936A (en) * 1997-06-20 1998-12-08 Sun Microsystems, Inc. Optimized routing scheme for an integrated circuit/printed circuit board
JP3535797B2 (ja) * 2000-03-10 2004-06-07 日本電信電話株式会社 モノリシック集積回路の製造方法
US6603199B1 (en) * 2000-11-28 2003-08-05 National Semiconductor Corporation Integrated circuit package having die with staggered bond pads and die pad assignment methodology for assembly of staggered die in single-tier ebga packages
US6591410B1 (en) * 2000-12-28 2003-07-08 Lsi Logic Corporation Six-to-one signal/power ratio bump and trace pattern for flip chip design
JP3929289B2 (ja) * 2001-11-12 2007-06-13 株式会社ルネサステクノロジ 半導体装置
JP2003229448A (ja) * 2002-01-31 2003-08-15 Kinseki Ltd 半導体素子の電極構造とそれを用いた圧電発振器
US6972464B2 (en) * 2002-10-08 2005-12-06 Great Wall Semiconductor Corporation Power MOSFET
TWI265600B (en) * 2002-11-18 2006-11-01 Hynix Semiconductor Inc Semiconductor device and method for fabricating the same
US6998719B2 (en) * 2003-07-30 2006-02-14 Telairity Semiconductor, Inc. Power grid layout techniques on integrated circuits
US7091614B2 (en) * 2004-11-05 2006-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit design for routing an electrical connection
US7405473B1 (en) * 2005-11-23 2008-07-29 Altera Corporation Techniques for optimizing electrical performance and layout efficiency in connectors with via placement and routing
EP2140741B1 (en) * 2007-04-20 2013-02-27 Telefonaktiebolaget LM Ericsson (publ) A printed board assembly and a method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1111824A (zh) * 1993-12-21 1995-11-15 株式会社东芝 半导体集成电路装置
US20030214344A1 (en) * 2002-05-20 2003-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device adaptable to plurality of types of packages
CN1832165A (zh) * 2004-12-10 2006-09-13 因芬尼昂技术股份公司 双列存储器模块的堆叠式dram存储器芯片
CN1819196A (zh) * 2005-01-27 2006-08-16 株式会社瑞萨科技 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路

Also Published As

Publication number Publication date
JP2011528196A (ja) 2011-11-10
WO2010008971A2 (en) 2010-01-21
CN102089974A (zh) 2011-06-08
EP2311190A2 (en) 2011-04-20
EP2311190A4 (en) 2011-09-21
WO2010008971A3 (en) 2010-04-22
US8138787B2 (en) 2012-03-20
US20100006904A1 (en) 2010-01-14
JP5566381B2 (ja) 2014-08-06

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