CN1020828C - 封装场发射器件 - Google Patents

封装场发射器件 Download PDF

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Publication number
CN1020828C
CN1020828C CN91100971A CN91100971A CN1020828C CN 1020828 C CN1020828 C CN 1020828C CN 91100971 A CN91100971 A CN 91100971A CN 91100971 A CN91100971 A CN 91100971A CN 1020828 C CN1020828 C CN 1020828C
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anode
feds
cavity
field emission
deposited
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CN91100971A
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CN1056375A (zh
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罗伯特·C·凯恩
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Motorola Solutions Inc
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Motorola Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Gas-Insulated Switchgears (AREA)
  • Measurement Of Radiation (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Microwave Tubes (AREA)

Abstract

一种封装的场发射器件，其阴极111设置在阳极106的周围，并相对于其轴向位移。器件本身是密封好的，它可以容易地制造，并且在批量生产时工作性能互相之间相差不大。

Description

本发明涉及场发射器件，更具体地说，涉及做成一非平面几何形状的场发射器件。
场致发射现象是众所周知的。真空电子管技术特别依赖于一受热阴极产生的电子发射。最近，已提出一种在冷阴极处发生电子发射的固体器件。这种技术的优点是很明显的，它具有快迅的开关能力，而且能抗磁脉冲干扰。
虽然固体场发射器件预期有这些优点，但仍存在着许多妨碍此技术推广应用的问题。一个问题就是这种器件的工艺性不可靠。这种器件现行的非平面形状要求发射极锥体的结构在显微镜级上。用一层一层淀积的工艺生产大量这种锥体对当今的制造能力提出了严重的挑战。已有人建议使用平面形状的器件，这种器件将显然相当容易制造。但这种平面开关并不适合于所有的应用。
因此，需要一种能易于用已知制造技术生产适合于各种不同应用场合的场发射器件。
本发明的目的是为了提供一种多电极场发射器件，其电极间的间隔在支持电极的基底发生平面变化时仍保持不变。
本申请所公开的场发射器件基本满足了这些要求。本发明的场致发射器一般包含一阳极和一个设置在该阳极周边处的阴极。
在本发明的一个实施例中，阴极相对于阳极有一轴位移。
本发明的另一实施例中，栅极也设置在阳极周边外，并相对于阳极和阴极有一轴向们移。
本发明的又一实施例中，设置在阴极上的棱边提供靠该棱边附近增强的电场引起的电子发射。
图1为本发明场发射器件的纵向侧部图;
图2A和2B是本发明两实施例的顶视平面图;
图3为多个制于同一基底上的本发明场发射器件的缩小规模的侧视图。
如图1所示，参考数字100表示本发明的场发射器件。该器件100包括一支持基底101，该基底由硅、石英或其它绝缘材料构成。在另一实施例中，这一层也可以使用导电材料。在用上述绝缘材料时，可在该层表面上形成合适的导电通路以电学耦联此器件的阳极，从而保证预期的器件应用。
另一绝缘层102（这里由聚酰来胺或类似材料构成）在支持基底101上面。然后用适当的腐蚀工艺在此第二绝缘层中形成一空腔103。空腔103最好充分深，以提供通往位于与该空腔会合处并形成支持基底101上的导电通路的通道。
由适当的金属化工艺把导体层104加在第二绝缘层102之上。 该导体层104构成栅。这一步中的金属化层也可以沉积在空腔103内，此金属化层形厉了器件100的阳极106。
把合适的掩膜材料沉积在空腔103内以保护阳极106，在栅层104顶部沉积或生长另一层绝缘层107。此后，沉积另一金属化层108。这时可以再加上另一绝缘层109。
用适当的腐蚀工艺腐蚀去最后一层金属化层108及最后一层绝缘层的侧面。这一腐蚀过程应是各向导性的。这一过程将产生一倾斜的、暴露的金属化表面110，并生成一边界相当好的棱边111。最后的金属化层108构成器件100的阴极。棱边111构成的几何突变对增强有利于器件100工作之性质的电场作出了贡献。
可以用腐蚀或剥离工艺来去除沉积在空腔103内的材料以便再将阳极106暴露出来。然后用低角汽相淀积工艺大结构100上沉积一层适当的绝缘材料112，如氧化铝或氧化硅，从而得到一封装好的场发射器件。最后一次淀积工艺最好在真空中进行，这样空腔103将为真空，这有利用该器件预期的操作。
向如此构成的阴极108和阳极106加适当的电势，电子113将方要从阴极108棱边111表现的几何突变处发射出来并向阳极106移动。该电流可以按照人们熟知的方法通过栅极104的适当控制而进行调制。
在器件100的另一实施例中，除去了中间金属化层104和与之相连的绝缘层107。这样得到的是一个两极器件，如二极管。
根据特殊的应用，空腔还可以做成圆环状（见图2a）、矩形（见图2b）或任何多面形的腔体。重要的是，在所有这些实施例中，阴极108均设置在阳极106的周围。在这些实施例中，阴极还相对于阳极有一轴向位移。在如图1所示的三极器件中，栅极也设置在阳极周围且相对于两个电极有一轴向位移。
下面结合图3说明器件100的重要优点。上述场发射器件是按微观等级构成的。因此，持基底（101）一般不是精确的平面形状。而表面可能出现图3所示的各种不同的形状，由于这些圾面变化的干扰，第一器件301的阳极106和第二器件302的阳极平面之间就产生了垂直位移（B）。类似的，在第二器件302和第三器件303的阳极106之间也存在着不同的位移C。
尽管容易发生这些差异，但各器件301、302和303的阴极棱极106之间的距离A仍基本保持相等。器件之间的这种一致性对每个器件及整个器件的预期性能产生了影响。同时，这些器件可以用已知的金属化、氧化生长、腐蚀和汽相淀积技术容易地制造出来。

Claims (2)

1、一种封装的场发射器件，包括：
(a)一个基底(101)，一个由一叠沉积在基底上的非导电材料层(102，107，109，112)和导电材料层(104，108)限定和密封的空腔(103)和一个沉积在空腔内的阳极(106)，其特征在于：
(b)一个沉积在阳极四周且相对阳极轴向配置的阴极(111)。
2、如权利要求1所述的场发射器件，其特征在于：有一个沉积在阳极四周且相对于阳极轴向配置的栅极（104）。
CN91100971A 1990-02-09 1991-02-09 封装场发射器件 Expired - Fee Related CN1020828C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/477,686 US5079476A (en) 1990-02-09 1990-02-09 Encapsulated field emission device
US477,686 1990-02-09

Publications (2)

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CN1056375A CN1056375A (zh) 1991-11-20
CN1020828C true CN1020828C (zh) 1993-05-19

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US (1) US5079476A (zh)
EP (1) EP0514444B1 (zh)
JP (1) JPH05504021A (zh)
CN (1) CN1020828C (zh)
AT (1) ATE151198T1 (zh)
DE (2) DE69125478T2 (zh)
WO (1) WO1991012625A1 (zh)

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Publication number Publication date
JPH05504021A (ja) 1993-06-24
CN1056375A (zh) 1991-11-20
US5079476A (en) 1992-01-07
EP0514444B1 (en) 1997-04-02
ATE151198T1 (de) 1997-04-15
DE69125478T2 (de) 1997-10-02
WO1991012625A1 (en) 1991-08-22
DE4103585A1 (de) 1991-08-14
DE69125478D1 (de) 1997-05-07
EP0514444A4 (en) 1993-02-17
EP0514444A1 (en) 1992-11-25

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