CN102080265A - 一种改进的中子掺杂晶体热处理工艺方法 - Google Patents
一种改进的中子掺杂晶体热处理工艺方法 Download PDFInfo
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- CN102080265A CN102080265A CN 200910241561 CN200910241561A CN102080265A CN 102080265 A CN102080265 A CN 102080265A CN 200910241561 CN200910241561 CN 200910241561 CN 200910241561 A CN200910241561 A CN 200910241561A CN 102080265 A CN102080265 A CN 102080265A
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- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 238000007669 thermal treatment Methods 0.000 title claims abstract description 26
- 125000006850 spacer group Chemical group 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 5
- 238000005488 sandblasting Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 8
- 238000006396 nitration reaction Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
晶体摆放位置 | 左端 | 中间 | 右端 |
第一组寿命/μs | 400/800 | 1200/1000 | 700/400 |
第二组寿命/μs | 240/900 | 1000/800 | 500/400 |
第三组寿命/μs | 300/1200 | 1200/1200 | 500/300 |
第四组寿命/μs | 300/1000 | 800/700 | 300/180 |
寿命平均值/μs | 310/975 | 1050/925 | 500/320 |
晶体摆放位置 | 左端 | 中间 | 右端 |
第一组寿命/μs | 800/1200 | 2000/1800 | 1000/800 |
第二组寿命/μs | 600/900 | 800/1000 | 2000/1000 |
第三组寿命/μs | 1000/1400 | 1200/1000 | 800/800 |
第四组寿命/μs | 500/500 | 600/700 | 700/900 |
寿命平均值/μs | 725/1000 | 1150/1125 | 1125/875 |
无隔离物寿命平均值/μs | 310/975 | 1050/925 | 500/320 |
放隔离物寿命平均值/μs | 725/1000 | 1150/1125 | 1125/875 |
晶体摆放位置 | 左端 | 中间 | 右端 |
第一组寿命/μs | 700/1200 | 1600/1800 | 1000/600 |
第二组寿命/μs | 500/800 | 1000/1000 | 2000/1000 |
第三组寿命/μs | 800/1000 | 1400/1200 | 800/600 |
第四组寿命/μs | 800/800 | 1200/1000 | 600/800 |
寿命平均值/μs | 700/950 | 1300/1250 | 1100/750 |
晶体摆放位置 | 左端 | 中间 | 右端 |
第一组寿命/μs | 600/1400 | 1400/1800 | 800/400 |
第二组寿命/μs | 800/800 | 1200/1000 | 1200/800 |
第三组寿命/μs | 600/1200 | 1400/1400 | 800/800 |
第四组寿命/μs | 800/1000 | 1600/1200 | 800/600 |
寿命平均值/μs | 700/1100 | 1400/1350 | 900/650 |
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200910241561 CN102080265B (zh) | 2009-11-26 | 2009-11-26 | 一种改进的中子掺杂硅晶体热处理工艺方法 |
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CN 200910241561 CN102080265B (zh) | 2009-11-26 | 2009-11-26 | 一种改进的中子掺杂硅晶体热处理工艺方法 |
Publications (2)
Publication Number | Publication Date |
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CN102080265A true CN102080265A (zh) | 2011-06-01 |
CN102080265B CN102080265B (zh) | 2012-11-28 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108889726A (zh) * | 2018-09-05 | 2018-11-27 | 浙江博达光电有限公司 | 光学级石英晶体的电/电磁清洗方法 |
CN115074836A (zh) * | 2022-07-08 | 2022-09-20 | 吉林大学 | 一种溴化镧晶体中子掺杂的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1008452B (zh) * | 1985-04-01 | 1990-06-20 | 北京科技大学 | 制备单晶硅片表面完整层的新途径 |
CN1010038B (zh) * | 1988-03-26 | 1990-10-17 | 河北工学院 | 中子嬗变掺杂直拉硅的退火工艺 |
CN1017487B (zh) * | 1990-08-20 | 1992-07-15 | 河北工学院 | 硅半导体器件用硅片的缺陷控制方法 |
JP2635450B2 (ja) * | 1991-03-26 | 1997-07-30 | 信越半導体株式会社 | 中性子照射用原料czシリコン単結晶 |
JP4132693B2 (ja) * | 2001-03-07 | 2008-08-13 | アルパイン株式会社 | イコライザ |
CN1260402C (zh) * | 2003-04-03 | 2006-06-21 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
JP2007176725A (ja) * | 2005-12-27 | 2007-07-12 | Shin Etsu Handotai Co Ltd | 中性子照射シリコン単結晶の製造方法 |
JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108889726A (zh) * | 2018-09-05 | 2018-11-27 | 浙江博达光电有限公司 | 光学级石英晶体的电/电磁清洗方法 |
CN115074836A (zh) * | 2022-07-08 | 2022-09-20 | 吉林大学 | 一种溴化镧晶体中子掺杂的方法 |
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