CN107641837B - 一种恢复ntd区熔单晶硅真实电阻率的退火方法 - Google Patents
一种恢复ntd区熔单晶硅真实电阻率的退火方法 Download PDFInfo
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CN112802782B (zh) * | 2021-03-29 | 2022-04-05 | 西安奕斯伟硅片技术有限公司 | 用于电荷钝化测试单晶硅片少子寿命的前处理系统和方法 |
CN114990693A (zh) * | 2022-04-02 | 2022-09-02 | 天津中环领先材料技术有限公司 | 一种ntd单晶硅退火工艺 |
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CN103165421B (zh) * | 2013-02-25 | 2015-11-04 | 天津市环欧半导体材料技术有限公司 | 提高中子嬗变掺杂或去应力硅单晶退火后少子寿命的方法 |
CN104278328A (zh) * | 2014-09-30 | 2015-01-14 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的去应力退火的方法 |
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Minority Carrier Lifetime in Annealed Silicon Crystals Containing Oxygen2;K.H. Yang et al.;《Phys. stat. sol.》;19781231;第(a)50,221卷;第221-235页 * |
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Inventor after: Xiao Wukun Inventor after: Liu Wei Inventor after: Zhang Hui Inventor after: Luo Wenbo Inventor after: Xie Xinjian Inventor after: Zhang Xuenan Inventor after: Chen Guifeng Inventor before: Chen Guifeng Inventor before: Luo Wenbo Inventor before: Zhang Hui Inventor before: Xie Xinjian Inventor before: Zhang Xuenan |
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