CN102077316A - 用于高产量及稳定逐基材表现的快速周期和广泛的后期紫外臭氧清洗程序的添加 - Google Patents

用于高产量及稳定逐基材表现的快速周期和广泛的后期紫外臭氧清洗程序的添加 Download PDF

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Publication number
CN102077316A
CN102077316A CN200980125854XA CN200980125854A CN102077316A CN 102077316 A CN102077316 A CN 102077316A CN 200980125854X A CN200980125854X A CN 200980125854XA CN 200980125854 A CN200980125854 A CN 200980125854A CN 102077316 A CN102077316 A CN 102077316A
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CN
China
Prior art keywords
chamber
processing
substrate
processing chamber
batch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980125854XA
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English (en)
Chinese (zh)
Inventor
S·I·依
陈劲文
T·诺瓦克
A·T·迪莫斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/178,523 external-priority patent/US20100018548A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102077316A publication Critical patent/CN102077316A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN200980125854XA 2008-06-27 2009-06-04 用于高产量及稳定逐基材表现的快速周期和广泛的后期紫外臭氧清洗程序的添加 Pending CN102077316A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7653708P 2008-06-27 2008-06-27
US61/076,537 2008-06-27
US12/178,523 US20100018548A1 (en) 2008-07-23 2008-07-23 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
US12/178,523 2008-07-23
PCT/US2009/046270 WO2009158169A1 (en) 2008-06-27 2009-06-04 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance

Publications (1)

Publication Number Publication Date
CN102077316A true CN102077316A (zh) 2011-05-25

Family

ID=41444874

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980125854XA Pending CN102077316A (zh) 2008-06-27 2009-06-04 用于高产量及稳定逐基材表现的快速周期和广泛的后期紫外臭氧清洗程序的添加

Country Status (5)

Country Link
JP (1) JP5572623B2 (https=)
KR (1) KR101631586B1 (https=)
CN (1) CN102077316A (https=)
TW (1) TWI465298B (https=)
WO (1) WO2009158169A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104916522A (zh) * 2014-03-10 2015-09-16 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
TWI476144B (zh) * 2012-05-14 2015-03-11 Univ Nat Taiwan 週期性奈米孔洞狀結構陣列之製造方法及其用途
JP7304768B2 (ja) * 2019-08-16 2023-07-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理装置の洗浄方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20060141806A1 (en) * 2004-06-18 2006-06-29 Carlo Waldfried Apparatus and process for treating dielectric materials
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
CN101171367A (zh) * 2005-05-09 2008-04-30 应用材料公司 处理室的高效uv清洁

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911233B2 (en) * 2002-08-08 2005-06-28 Toppoly Optoelectronics Corp. Method for depositing thin film using plasma chemical vapor deposition
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
TWI424460B (zh) * 2004-06-18 2014-01-21 Axcelis Tech Inc 用於處理介電材料之設備及製程
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US7909595B2 (en) * 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections
JP5258241B2 (ja) * 2006-09-19 2013-08-07 日本エー・エス・エム株式会社 Ｕｖ照射チャンバーをクリーニングする方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
US20060141806A1 (en) * 2004-06-18 2006-06-29 Carlo Waldfried Apparatus and process for treating dielectric materials
CN101171367A (zh) * 2005-05-09 2008-04-30 应用材料公司 处理室的高效uv清洁
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104916522A (zh) * 2014-03-10 2015-09-16 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法
CN104916522B (zh) * 2014-03-10 2017-12-22 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法

Also Published As

Publication number Publication date
KR101631586B1 (ko) 2016-06-17
JP5572623B2 (ja) 2014-08-13
TWI465298B (zh) 2014-12-21
WO2009158169A1 (en) 2009-12-30
KR20110025227A (ko) 2011-03-09
JP2011526077A (ja) 2011-09-29
TW201008671A (en) 2010-03-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20110525