TWI465298B - 用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 - Google Patents

用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 Download PDF

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Publication number
TWI465298B
TWI465298B TW098121035A TW98121035A TWI465298B TW I465298 B TWI465298 B TW I465298B TW 098121035 A TW098121035 A TW 098121035A TW 98121035 A TW98121035 A TW 98121035A TW I465298 B TWI465298 B TW I465298B
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TW
Taiwan
Prior art keywords
processing chamber
chamber
substrate
processing
cleaning
Prior art date
Application number
TW098121035A
Other languages
English (en)
Chinese (zh)
Other versions
TW201008671A (en
Inventor
項映怡
陳勁文
諾瓦克湯瑪士
狄摩斯亞歷山卓Ｔ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/178,523 external-priority patent/US20100018548A1/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201008671A publication Critical patent/TW201008671A/zh
Application granted granted Critical
Publication of TWI465298B publication Critical patent/TWI465298B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
TW098121035A 2008-06-27 2009-06-23 用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加 TWI465298B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7653708P 2008-06-27 2008-06-27
US12/178,523 US20100018548A1 (en) 2008-07-23 2008-07-23 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance

Publications (2)

Publication Number Publication Date
TW201008671A TW201008671A (en) 2010-03-01
TWI465298B true TWI465298B (zh) 2014-12-21

Family

ID=41444874

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098121035A TWI465298B (zh) 2008-06-27 2009-06-23 用於高產量及穩定逐基材表現之快速週期和廣泛的後期紫外臭氧清洗程序之添加

Country Status (5)

Country Link
JP (1) JP5572623B2 (https=)
KR (1) KR101631586B1 (https=)
CN (1) CN102077316A (https=)
TW (1) TWI465298B (https=)
WO (1) WO2009158169A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
TWI476144B (zh) * 2012-05-14 2015-03-11 Univ Nat Taiwan 週期性奈米孔洞狀結構陣列之製造方法及其用途
CN104916522B (zh) * 2014-03-10 2017-12-22 中芯国际集成电路制造(上海)有限公司 去除hasti制备过程中形成的残留颗粒的方法
JP7304768B2 (ja) * 2019-08-16 2023-07-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理装置の洗浄方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
US20030183244A1 (en) * 2002-04-02 2003-10-02 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
TWI248126B (en) * 2004-01-23 2006-01-21 Air Prod & Chem Cleaning CVD chambers following deposition of porogen-containing materials
TW200625388A (en) * 2004-06-18 2006-07-16 Axcelis Tech Inc Apparatus and process for treating dielectric materials
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
TW200741028A (en) * 2006-03-17 2007-11-01 Applied Materials Inc UV cure system
CN101171367A (zh) * 2005-05-09 2008-04-30 应用材料公司 处理室的高效uv清洁
TW200832534A (en) * 2006-09-19 2008-08-01 Asm Japan Method of cleaning UV irradiation chamber

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911233B2 (en) * 2002-08-08 2005-06-28 Toppoly Optoelectronics Corp. Method for depositing thin film using plasma chemical vapor deposition
US7709814B2 (en) * 2004-06-18 2010-05-04 Axcelis Technologies, Inc. Apparatus and process for treating dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
US20030183244A1 (en) * 2002-04-02 2003-10-02 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
TW535222B (en) * 2002-06-11 2003-06-01 Toppoly Optoelectronics Corp Method for depositing thin film using plasma chemical vapor deposition
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7265061B1 (en) * 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
TWI248126B (en) * 2004-01-23 2006-01-21 Air Prod & Chem Cleaning CVD chambers following deposition of porogen-containing materials
TW200625388A (en) * 2004-06-18 2006-07-16 Axcelis Tech Inc Apparatus and process for treating dielectric materials
CN101171367A (zh) * 2005-05-09 2008-04-30 应用材料公司 处理室的高效uv清洁
TW200741028A (en) * 2006-03-17 2007-11-01 Applied Materials Inc UV cure system
TW200832534A (en) * 2006-09-19 2008-08-01 Asm Japan Method of cleaning UV irradiation chamber

Also Published As

Publication number Publication date
KR101631586B1 (ko) 2016-06-17
JP5572623B2 (ja) 2014-08-13
CN102077316A (zh) 2011-05-25
WO2009158169A1 (en) 2009-12-30
KR20110025227A (ko) 2011-03-09
JP2011526077A (ja) 2011-09-29
TW201008671A (en) 2010-03-01

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