CN102077143B - 用于显微光刻投影系统的远心性校正器 - Google Patents

用于显微光刻投影系统的远心性校正器 Download PDF

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Publication number
CN102077143B
CN102077143B CN200980126128.XA CN200980126128A CN102077143B CN 102077143 B CN102077143 B CN 102077143B CN 200980126128 A CN200980126128 A CN 200980126128A CN 102077143 B CN102077143 B CN 102077143B
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China
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disposition
far away
corrector
target
lighting device
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Expired - Fee Related
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CN200980126128.XA
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English (en)
Chinese (zh)
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CN102077143A (zh
Inventor
J·D·康纳尔
J·D·玛拉齐
P·F·米开罗斯基
J·E·韦伯
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Corning Inc
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Corning Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
    • G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G02B27/4222—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant in projection exposure systems, e.g. photolithographic systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200980126128.XA 2008-06-30 2009-06-25 用于显微光刻投影系统的远心性校正器 Expired - Fee Related CN102077143B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7688808P 2008-06-30 2008-06-30
US61/076,888 2008-06-30
PCT/US2009/003795 WO2010005491A1 (en) 2008-06-30 2009-06-25 Telecentricity corrector for microlithographic projection system

Publications (2)

Publication Number Publication Date
CN102077143A CN102077143A (zh) 2011-05-25
CN102077143B true CN102077143B (zh) 2014-01-22

Family

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CN200980126128.XA Expired - Fee Related CN102077143B (zh) 2008-06-30 2009-06-25 用于显微光刻投影系统的远心性校正器

Country Status (6)

Country Link
US (1) US8314922B2 (https=)
EP (1) EP2310914B1 (https=)
JP (1) JP5763534B2 (https=)
KR (1) KR101624758B1 (https=)
CN (1) CN102077143B (https=)
WO (1) WO2010005491A1 (https=)

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KR101624758B1 (ko) * 2008-06-30 2016-05-26 코닝 인코포레이티드 마이크로리소그래픽 투사 시스템용 텔레센트릭성 교정기
TWI648532B (zh) 2011-08-29 2019-01-21 美商安美基公司 用於非破壞性檢測-流體中未溶解粒子之方法及裝置
JP6147058B2 (ja) * 2013-04-01 2017-06-14 キヤノン株式会社 ノズルチップの製造方法
US9188767B2 (en) 2013-11-04 2015-11-17 Christie Digital Systems Usa, Inc. Relay lens system for a high dynamic range projector
US9232172B2 (en) 2013-11-04 2016-01-05 Christie Digital Systems Usa, Inc. Two-stage light modulation for high dynamic range
KR20180010242A (ko) * 2015-05-21 2018-01-30 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 장치의 작동 방법
US10088660B2 (en) 2017-02-10 2018-10-02 Amgen Inc. Imaging system for counting and sizing particles in fluid-filled vessels
JP2018151832A (ja) * 2017-03-13 2018-09-27 キヤノン株式会社 情報処理装置、情報処理方法、および、プログラム
JP2019079029A (ja) * 2017-10-24 2019-05-23 キヤノン株式会社 露光装置および物品の製造方法
WO2019082727A1 (ja) * 2017-10-24 2019-05-02 キヤノン株式会社 露光装置および物品の製造方法
EP3486866A1 (en) * 2017-11-15 2019-05-22 Thomson Licensing A method for processing a light field video based on the use of a super-rays representation
WO2021045685A1 (en) 2019-09-04 2021-03-11 Ams Sensors Singapore Pte. Ltd. Designing and constructing dot projectors for three-dimensional sensor modules
CN113552774A (zh) * 2020-04-23 2021-10-26 上海微电子装备（集团）股份有限公司 照明光学系统、光刻机设备及曝光方法
EP4650875A1 (en) 2024-05-13 2025-11-19 ASML Netherlands B.V. Illumination uniformity correction apparatus with a transmissive correction plate with a varying parameter profile

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5461456A (en) * 1992-11-24 1995-10-24 General Signal Corporation Spatial uniformity varier for microlithographic illuminator
US5739899A (en) * 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity
WO2006029796A2 (en) * 2004-09-13 2006-03-23 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus

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Publication number Priority date Publication date Assignee Title
JPS62266513A (ja) * 1986-05-14 1987-11-19 Canon Inc 投影露光光学系
US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
US6522386B1 (en) 1997-07-24 2003-02-18 Nikon Corporation Exposure apparatus having projection optical system with aberration correction element
JP2000195778A (ja) 1998-12-28 2000-07-14 Nikon Corp 露光装置及びテレセントリシティ―ムラ補正部材の製造方法
TWI283798B (en) * 2000-01-20 2007-07-11 Asml Netherlands Bv A microlithography projection apparatus
JP2002184676A (ja) * 2000-12-18 2002-06-28 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
JP2003203844A (ja) * 2002-01-08 2003-07-18 Nikon Corp 投影露光装置及び露光方法
DE102004035595B4 (de) * 2004-04-09 2008-02-07 Carl Zeiss Smt Ag Verfahren zur Justage eines Projektionsobjektives
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
US7508489B2 (en) * 2004-12-13 2009-03-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US20090021830A1 (en) * 2005-09-14 2009-01-22 Carl Zeiss Smt Ag Projection lens of a microlithographic exposure system
US7646543B2 (en) 2006-05-05 2010-01-12 Corning Incorporated Distortion tuning of quasi-telecentric lens
KR101624758B1 (ko) * 2008-06-30 2016-05-26 코닝 인코포레이티드 마이크로리소그래픽 투사 시스템용 텔레센트릭성 교정기

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461456A (en) * 1992-11-24 1995-10-24 General Signal Corporation Spatial uniformity varier for microlithographic illuminator
US5739899A (en) * 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity
WO2006029796A2 (en) * 2004-09-13 2006-03-23 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus

Also Published As

Publication number Publication date
KR20110026496A (ko) 2011-03-15
US8314922B2 (en) 2012-11-20
JP5763534B2 (ja) 2015-08-12
EP2310914A1 (en) 2011-04-20
KR101624758B1 (ko) 2016-05-26
US20090323040A1 (en) 2009-12-31
CN102077143A (zh) 2011-05-25
JP2011527024A (ja) 2011-10-20
EP2310914B1 (en) 2018-12-26
WO2010005491A1 (en) 2010-01-14

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