CN102067312B - 包括碳基存储器元件的存储器单元及其形成方法 - Google Patents

包括碳基存储器元件的存储器单元及其形成方法 Download PDF

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CN102067312B
CN102067312B CN200980122112.1A CN200980122112A CN102067312B CN 102067312 B CN102067312 B CN 102067312B CN 200980122112 A CN200980122112 A CN 200980122112A CN 102067312 B CN102067312 B CN 102067312B
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carbon
layer
based material
methods
memory
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CN102067312A (zh
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罗伊·E·肖伊尔莱因
阿尔珀·伊尔克巴哈
阿普里尔·D·施里克
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SanDisk Technologies LLC
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SanDisk 3D LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
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    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
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    • G11C2213/72—Array wherein the access device being a diode
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    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/723—On an electrically insulating substrate
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/788—Of specified organic or carbon-based composition
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    • Y10S977/00—Nanotechnology
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    • Y10S977/789—Of specified organic or carbon-based composition in array format
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    • Y10S977/70—Nanostructure
    • Y10S977/788—Of specified organic or carbon-based composition
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    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

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CN200980122112.1A 2008-04-11 2009-04-10 包括碳基存储器元件的存储器单元及其形成方法 Active CN102067312B (zh)

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US4439908P 2008-04-11 2008-04-11
US61/044,399 2008-04-11
US12/418,855 2009-04-06
US12/418,855 US8110476B2 (en) 2008-04-11 2009-04-06 Memory cell that includes a carbon-based memory element and methods of forming the same
PCT/US2009/040183 WO2009126871A1 (en) 2008-04-11 2009-04-10 A memory cell that includes a carbon-based memory element and methods of forming the same

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EP (1) EP2263256B1 (enExample)
JP (1) JP5564035B2 (enExample)
KR (1) KR101597845B1 (enExample)
CN (1) CN102067312B (enExample)
TW (1) TW201010007A (enExample)
WO (1) WO2009126871A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US20100032639A1 (en) * 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8252653B2 (en) * 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
US8198671B2 (en) * 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
US8298891B1 (en) 2009-08-14 2012-10-30 Intermolecular, Inc. Resistive-switching memory element
JP5439147B2 (ja) 2009-12-04 2014-03-12 株式会社東芝 抵抗変化メモリ
KR101883236B1 (ko) * 2010-06-11 2018-08-01 크로스바, 인크. 메모리 디바이스를 위한 필러 구조 및 방법
US8699259B2 (en) * 2011-03-02 2014-04-15 Sandisk 3D Llc Non-volatile storage system using opposite polarity programming signals for MIM memory cell
US8852996B2 (en) 2012-12-20 2014-10-07 Intermolecular, Inc. Carbon doped resistive switching layers
US9806129B2 (en) 2014-02-25 2017-10-31 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US9484196B2 (en) 2014-02-25 2016-11-01 Micron Technology, Inc. Semiconductor structures including liners comprising alucone and related methods
US11223014B2 (en) 2014-02-25 2022-01-11 Micron Technology, Inc. Semiconductor structures including liners comprising alucone and related methods
US10249819B2 (en) 2014-04-03 2019-04-02 Micron Technology, Inc. Methods of forming semiconductor structures including multi-portion liners
US10497867B1 (en) * 2018-07-02 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer structure to increase crystalline temperature of a selector device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1763037A1 (en) * 2005-09-08 2007-03-14 STMicroelectronics S.r.l. Nanotube memory cell with floating gate based on passivated nanoparticles and manufacturing process thereof
CN101132052A (zh) * 2006-08-25 2008-02-27 奇梦达股份公司 信息存储元件及其制造方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US6756605B1 (en) * 1999-09-20 2004-06-29 Yale University Molecular scale electronic devices
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
AUPO613797A0 (en) 1997-04-09 1997-05-08 University Of Sydney, The Digital information storage
FR2786794B1 (fr) 1998-12-02 2001-03-02 Commissariat Energie Atomique Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche
EP1163676B1 (de) * 1999-03-19 2002-12-11 Infineon Technologies AG Speicherzellenanordnung und verfahren zu deren herstellung
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
DE10006964C2 (de) * 2000-02-16 2002-01-31 Infineon Technologies Ag Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements
US6566278B1 (en) * 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
US7112366B2 (en) * 2001-01-05 2006-09-26 The Ohio State University Chemical monolayer and micro-electronic junctions and devices containing same
US6632735B2 (en) 2001-08-07 2003-10-14 Applied Materials, Inc. Method of depositing low dielectric constant carbon doped silicon oxide
US20050148174A1 (en) * 2002-05-06 2005-07-07 Infineon Technologies Ag Contact-connection of nanotubes
US6764949B2 (en) * 2002-07-31 2004-07-20 Advanced Micro Devices, Inc. Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
US6753561B1 (en) * 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6900002B1 (en) * 2002-11-19 2005-05-31 Advanced Micro Devices, Inc. Antireflective bi-layer hardmask including a densified amorphous carbon layer
GB0229033D0 (en) 2002-12-12 2003-01-15 Isis Innovation Purification of nanotubes
AU2003296988A1 (en) * 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US7767499B2 (en) * 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US7176064B2 (en) * 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
DE10306076B4 (de) 2003-02-08 2005-02-17 Hahn-Meitner-Institut Berlin Gmbh Quantenpunkt aus elektrisch leitendem Kohlenstoff, Verfahren zur Herstellung und Anwendung
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
JP2004335595A (ja) * 2003-05-02 2004-11-25 Sharp Corp 半導体記憶装置
US20050006640A1 (en) * 2003-06-26 2005-01-13 Jackson Warren B. Polymer-based memory element
WO2005019104A2 (en) 2003-08-18 2005-03-03 President And Fellows Of Harvard College Controlled nanotube fabrication and uses
US7109087B2 (en) 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
US7354631B2 (en) 2003-11-06 2008-04-08 Micron Technology, Inc. Chemical vapor deposition apparatus and methods
JP4835158B2 (ja) * 2003-12-18 2011-12-14 富士電機株式会社 スイッチング素子
US7608467B2 (en) 2004-01-13 2009-10-27 Board of Regents University of Houston Switchable resistive perovskite microelectronic device with multi-layer thin film structure
US7220982B2 (en) * 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
US7405465B2 (en) * 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
KR100719346B1 (ko) * 2005-04-19 2007-05-17 삼성전자주식회사 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20060250836A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7426128B2 (en) 2005-07-11 2008-09-16 Sandisk 3D Llc Switchable resistive memory with opposite polarity write pulses
US20070007579A1 (en) 2005-07-11 2007-01-11 Matrix Semiconductor, Inc. Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
US7838943B2 (en) 2005-07-25 2010-11-23 International Business Machines Corporation Shared gate for conventional planar device and horizontal CNT
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
WO2007095194A2 (en) * 2006-02-10 2007-08-23 Intermolecular, Inc. Method and apparatus for combinatorially varying materials, unit process and process sequence
JP5205670B2 (ja) * 2006-03-20 2013-06-05 独立行政法人物質・材料研究機構 固体素子構造とそれを使用した電気・電子素子及び電気・電子機器
TWI463673B (zh) 2006-08-08 2014-12-01 Nantero Inc 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
US8030637B2 (en) * 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US20080102278A1 (en) * 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
CN100442438C (zh) 2006-12-20 2008-12-10 南京大学 一种非晶碳膜半导体制备方法
US7901776B2 (en) 2006-12-29 2011-03-08 3M Innovative Properties Company Plasma deposited microporous carbon material
US7667999B2 (en) * 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
JP2010522991A (ja) 2007-03-27 2010-07-08 サンディスク スリーディー，エルエルシー カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法
US7982209B2 (en) * 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
KR20090011933A (ko) 2007-07-27 2009-02-02 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8236623B2 (en) * 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US7768016B2 (en) 2008-02-11 2010-08-03 Qimonda Ag Carbon diode array for resistivity changing memories
US8304284B2 (en) 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US20100032639A1 (en) * 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US20110287270A1 (en) 2008-10-22 2011-11-24 Rohm Co., Ltd. Method for forming a boron-containing thin film and multilayer structure
JP2010165950A (ja) 2009-01-16 2010-07-29 Toshiba Corp 不揮発性半導体メモリ及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1763037A1 (en) * 2005-09-08 2007-03-14 STMicroelectronics S.r.l. Nanotube memory cell with floating gate based on passivated nanoparticles and manufacturing process thereof
CN101132052A (zh) * 2006-08-25 2008-02-27 奇梦达股份公司 信息存储元件及其制造方法

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US8110476B2 (en) 2012-02-07
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US8536015B2 (en) 2013-09-17
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US20120119178A1 (en) 2012-05-17
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