CN102017819B - 接合方法以及接合装置 - Google Patents

接合方法以及接合装置 Download PDF

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Publication number
CN102017819B
CN102017819B CN200980115842.9A CN200980115842A CN102017819B CN 102017819 B CN102017819 B CN 102017819B CN 200980115842 A CN200980115842 A CN 200980115842A CN 102017819 B CN102017819 B CN 102017819B
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thing
substrate
engaged
oxide
tin
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CN102017819A (zh
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大野恭秀
谷口庆辅
竹内达也
萩原泰三
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Shinko Seiki Co Ltd
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Shinko Seiki Co Ltd
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    • H—ELECTRICITY
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Abstract

不会使被接合物彼此的电气的接触性恶化，而容易地在低温下接合。对在外部引出电极(5)的表面上具有突起电极(6)的半导体芯片(2)以及中间基板(3)的突起电极(8)的表面，通过氢自由基进行氧化膜还原处理，之后，对半导体芯片(2)以及中间基板(3)的外部引出电极(8)以及突起电极(6)进行对位，并且之后，施加载荷而接合。

Description

接合方法以及接合装置
技术领域
本发明涉及对基板进行接合的方法以及该方法中使用的装置。
背景技术
作为基板彼此的接合技术，有倒装芯片(flipchip)连接。倒装芯片连接是指，无需从与一个基板相当的半导体芯片向其他基板(印刷基板、插入机构等)引出引线，而将半导体芯片经由二维配置的被称为凸块(bump)的突起电极连接到其他基板的方式。即，在倒装芯片连接中，使半导体芯片与其他基板的表面上的突起电极彼此连接、或者使半导体芯片以及其他基板的一个表面上的突起电极与另一方的表面上的引出电极连接。
但是，当前，在将突起电极接合到引出电极上时，主要使用焊剂。焊剂用于对突起电极的表面以及内部的氧化物进行还原·去除、或者防止突起电极表面的氧化，但如果在将突起电极与引出电极接合之后焊剂残留于基板上，则对半导体的可靠性等造成影响。因此，需要洗净并去除残留于间隙中的焊剂残渣，以便不使焊剂残留于半导体芯片与基板的间隙中。
但是，将来，预测倒装芯片连接中的半导体芯片与基板的间隙为50μm以下，而极其难以对残留于间隙中的焊剂残渣进行洗净·去除。另外，一定不容易完全去除焊剂残渣。因此，近年来广泛提出了不使用焊剂而将突起电极接合到引出电极上的技术。例如，在专利文献1中，公开了如下技术：在使用以乙醇、有机酸为主成分的粘接剂将突起电极暂时固定到引出电极上之后，使突起电极暴露于包含自由基气体(氢自由基)的气氛中，对突起电极表面的氧化膜进行还原处理(去除)，并且进行热处理而将突起电极接合到引出电极上。
另外，在专利文献2中，公开了如下技术：在实施了电极表面的氧化膜还原处理之后，在大气中对位，使其在氧浓度较低的气氛中溶融。
专利文献1：日本特开2005-230830号公报
专利文献2：日本特开2007-266054号公报
发明内容
但是，在专利文献1以及2的技术中，必需在氧化膜还原处理之后进行热处理而将突起电极加热至其溶融温度以上。这样的加热不适合于半导体芯片。
本发明是鉴于所述问题而完成的，其目的在于提供一种接合方法以及装置，不会使被接合物彼此的电气的接触性恶化，而容易地在低温下接合。
本发明的一个方式提供一种接合方法，其特征在于，具备：针对在表面中分别具有非接合物的第1以及第2基板的所述非接合物的表面，通过氢自由基进行氧化膜还原处理的过程；以及对进行了所述氧化膜还原处理后的所述非接合物进行对位，之后对所述第1以及第2基板施加载荷而接合所述非接合物彼此的过程。所述第1基板的被接合物是所述第1基板的表面中设置的电极，所述第2基板的被接合物是第2基板的表面中设置的电极的表面中设置的突起电极，在所述氧化膜还原处理之后向大气中取出所述第1以及第2基板，在高温下通过所述载荷进行接合。对位和加热的顺序可以是任意的。例如，所述附加接合的载荷之前的电极的在大气中放置的时间、温度处于以下所示的范围内，
Log(t)≤3(1000/T-2)(1)
t：曝露时间(min)
T：加热温度(K)。
在如图6所示，在以2个阶段以上的加热曲线进行加热的情况下，曝露时间与加热温度优选满足以下条件。
∑(log(tn)/{3(1000/Tn-2)}≤1(2)
tn、Tn：第n阶段的时间、温度
所述第1以及第2基板的被接合物既可以是所述第1以及第2基板的表面中设置的面状体，也可以是所述第1以及第2基板的表面中设置的线状体。
本发明的另一方式提供一种接合装置，其特征在于，具备：针对在表面中分别具有非接合物的第1以及第2基板的所述非接合物的表面，通过氢自由基进行氧化膜还原处理的单元；对进行了所述氧化膜还原处理后的所述非接合物进行对位的单元；以及在所述对位之后对所述第1以及第2基板施加载荷而接合所述非接合物彼此的单元。
在接合被接合物的情况下，在通过加热使被接合物溶融的情况下，需要加热到被接合物的溶融温度以上的温度，但如果这样加热到高温，则被接合物的表面被氧化，而无法接合。但是，如果通过利用本发明的接合方法以及装置对被接合物的表面进行氢自由基照射来去除表面的氧化膜，则该氧化被延迟，在不会被氧化且小于被接合物的溶融温度的温度下也可以进行接合。
附图说明
图1是示出通过本发明的第1实施方式制造的半导体装置1的图。
图2是示出图1的半导体装置的制造方法的流程的流程图。
图3是示出图1的半导体装置1的制造中使用的氧化膜去除装置的图。
图4是示出可通过本发明的第1实施方式制造的其他半导体装置的图。
图5是示出可通过本发明的第1实施方式制造的其他半导体装置的图。
图6是示出本发明的第1实施方式的变形例中的温度与时间的关系的图。
图7是示出通过本发明的第2实施方式制造的基板的图。
图8是示出图7的基板的制造中使用的接合装置的图。
图9是示出通过本发明的第3实施方式制造的基板的图。
图10是示出图7以及图9的基板的制造中使用的其他接合装置的图。
具体实施方式
以下，参照附图，对本发明的实施方式进行详细说明。
图1示出通过本发明的第1实施方式制造出的半导体装置1。图2示出图1的半导体装置1的制造方法的流程。该半导体装置1是将第1基板例如半导体芯片2粘合到第2基板例如中间基板3而得到的。
半导体芯片2具有半导体元件4、外部引出电极5以及突起电极6。半导体元件4在其内部例如组装有集成电路(未图示)。外部引出电极5形成在半导体元件4的表面中，例如与该集成电路的一端连接。突起电极6形成在外部引出电极5的表面。
中间基板3是用于对例如半导体芯片2的外部引出电极5、与用于安装半导体装置1的印刷基板(未图示)的表面中设置的电极焊盘(未图示)进行电连接的插入机构，具有绝缘基板7、贯通其内部的通孔(未图示)、以及与该通孔连接并且形成在中间基板3的表面中的外部引出电极8。
此处，外部引出电极5、8的至少表面例如由包含Al(铝)、Ni(镍)、Cu(铜)、Au(金)、Pd(钯)、Ag(银)、In(铟)或者Sn(锡)的金属构成。突起电极6例如由不含有杂质的Sn(锡)、或者、含有Ag(银)、Cu(铜)、Bi(铋)、In(铟)、Ni(镍)、Au(金)、P(磷)以及Pb(铅)中的至少一种杂质的锡构成，例如，通过镀敷、印刷、滚涂(ball)或者蒸镀形成。
以下，参照图2～图3，对本发明的实施方式的半导体装置1的制造方法进行说明。
首先，对在实施半导体装置1的制造方法时使用的氧化膜去除装置10进行说明。
氧化膜去除装置10是用于去除覆盖了外部引出电极5、8、突起电极6的表面的氧化膜的装置。该氧化膜去除装置10如图3所示，具有由相互空间上分离的等离子体产生室11A以及处理室11B构成的腔11。在等离子体产生室11A中，经由波导管13以及微波导入窗12配置了产生微波W的微波产生装置14，并且，经由供给管15配置了产生氢气的氢气源16。由此，等离子体产生室11A通过由微波产生装置14产生的微波W对从氢气源16供给的氢气进行离子体化，产生氢自由基(自由基气体)。
在等离子体产生室11A中，并在比等离子体产生领域P靠近处理室11B的一侧设置了罩17。罩17例如由金属丝网构成，尽可能捕捉等离子体中存在的不需要的带电粒子，并且将在等离子体产生室11A内产生的等离子体中包含的气体导入到处理室11B内。由此，等离子体产生室11A将包含氢自由基的气体经由罩17导入到处理室11B中。
在处理室11B中，设置用于载置处理对象物(半导体芯片2、中间基板3)的支撑台18。支撑台18在支撑半导体芯片2、中间基板3的部分中，具有加热器19以及冷却器20，可以通过规定的步骤对半导体芯片2、中间基板3进行加热·冷却。在处理室11B中，还在底面经由排气口21设置了真空泵22，并在底面中设置了压力计23。真空泵22用于将腔11内的气体排气到外部而对腔11内的压力进行减压。压力计23用于测量腔11内的压力。在处理室11B中，经由供给管24还设置有氮气源25。另外，氮气源25也可以设置在等离子体产生室11A侧。压力计23的测量值传达到控制部26，控制部26根据该测量值对氢气源15、真空泵22、氮气源25进行控制。由此，可以使处理对象物暴露于包含氢自由基的气体中。
(氧化膜的去除)
使用所述结构的氧化膜去除装置10，来去除覆盖了外部引出电极5、8、突起电极6的表面的氧化膜。
具体而言，首先，打开腔11，在支撑台18上载置半导体芯片2、中间基板3，在其上载置外部引出电极5、8、突起电极6(步骤S1)。另外，在图3中，例示了在支撑台18上载置了半导体芯片2的情况。接下来，在关闭了腔11之后，使真空泵22动作，而对腔11内的气体进行排气、减压(步骤S2)。
接下来，使微波产生装置14动作，而产生微波W，并且使氢气源16动作，而产生氢气。由此，通过微波W对氢气进行等离子体化，而产生氢自由基(自由基气体)(步骤S3)。其结果，由等离子体产生室11A产生的氢自由基随着气体流而通过罩17，并且经由喷嘴18而被导入到处理室11B中。
载置于支撑台18中的半导体芯片2以及中间基板3的外部引出电极5、8、突起电极6被暴露于包含从喷嘴18供给的氢自由基的气体中。由此，覆盖了外部引出电极5、8、突起电极6的表面的氧化膜与氢自由基进行化学反应而气化，而从表面被去除(步骤S4)。
(对位、接合)
接下来，在将半导体芯片2以及中间基板3取出到大气中之后(步骤S5)，通过倒装接合机进行两者的接合(步骤S6)。此时，对于加压前的应接合的面被暴露的环境，将温度、时间设为以下的条件。
Log(t)≤3(1000/T-2)(1)
t：曝露时间(min)
T：加热温度(K)
如果将焊锡加热到高温，则表面被氧化，而无法接合。但是，如果针对表面通过氧化膜还原处理、特别是氢自由基照射来去除表面的氧化膜，则该氧化被延迟，在式(1)所示那样的温度、时间的范围中，不会氧化而可以接合。另外，在对焊锡进行固相接合的情况下，如果在表面中没有氧化膜，若在100～200℃时，可以通过附加1MPa～6MPa的载荷来接合。对于温度，在100℃以下，相互的扩散不充分，在200℃以上，过于软化。对于载荷，为了使接合部表面的凹凸变得平坦，需要1MPa，在6Mpa以上时突起过于崩溃。如果在接合时附加超声波，则接合强度进一步上升。
另外，简单叙述得到式(1)的过程。对于Sn-3.5％Ag的成分的焊锡球(球径760μm)，通过氢自由基处理，进行表面氧化膜还原，在完全去除了氧化膜之后，在大气中通过热板放置一定的加热温度(T)、时间(t)而冷却，通过俄歇分析测定表面氧化膜的厚度。其结果，在一定温度下，直到某时间，氧化膜厚度不增加，而从由温度决定的一定的时间起急剧增加。将该温度(T)与开始增加的时间(t)的关系作为公式的结果，可以得到式(1)。进而，通过实验可知，在2个阶段以上的加热的情况下，由式(2)所示那样的各阶段中的氧化膜形成开始时间的累计值决定。
另外，通过实施氧化膜还原处理，如果是所述氧化膜急剧增加的加热时间前，则几乎不存在氧化膜，即使在大气中进行了加热，也可以接合。如果没有实施氧化膜还原处理，则氧化膜在远比该加热条件低的温度下，短时间地生长。
在表1中，列出了多列作为突起电极6的材料可以考虑到的材料(Sn、Ag、Cu、Bi、In、Ni、Au、P以及Pb)的组合(材料A1～A33)。此处，表1内的值是含有率(％)。另外，Sn的栏中的“剩余”是指，在将整体设为100时，从100减去含有元素的比例而得到的值。另外，材料B1、B2是由于含有Zn(锌)而在氧化膜中含有ZnO的比例较多、且与SnO的情况相比难以化学地去除氧化膜的材料，由于作为本实施方式的突起电极6的材料是不恰当的材料，所以作为比较例而列举出。
[表1]
在表2中，示出了如下情况下的剪切强度。即，将所述材料A1～A35、B1、B2用作突起电极6的材料，作为外部引出电极5、8的材料，使用(Cu(材料C1)、Au(材料C2)，作为化学处理，通过氢自由基、氢与Ar气体的混合、含有蚁酸的有机酸气化气体、氢和氮气体中的某一个进行氧化膜还原处理，使接合温度(加热温度T)、接合载荷、加热时间(在施加载荷之前在所述加热温度大气中暴晒的时间t)变化。此处，表2内的双重圆表示接合后的剪切强度是2MPa以上，单圆表示小于2Mpa大于等于0.5Mpa，叉表示小于0.5MPa。附加了双重圆或者单圆的情况下的加热温度和加热时间满足所述式(1)的关系。
[表2]
2个阶段加热★；150℃2min-170℃2min
(注)
将形成了4000个的形状的突起电极的
半导体芯片连接到具有相同形状的外部引出电极的基板。
加热时间是指，在附加荷重之前在加热温度下在大气中暴露的时间。
No.35附加超声波
No.1～38，44～50；本发明
No.39～43；比较
因此，在本实施方式的半导体装置1的制造方法中，不会使突起电极6与外部引出电极8的电气的接触性恶化，而可以容易地实现接合强度较高的倒装芯片连接。
在所述实施方式中，使突起电极6与外部引出电极8接合，但也可以使突起电极彼此接合。另外，在所述实施方式中，使半导体芯片2与中间基板3接合，但也可以使半导体芯片2与印刷基板相互接合。
另外，在所述实施方式中，说明了对1个半导体芯片2、与中间基板3进行倒装芯片连接的情况，但本发明不限于此，例如，还可以应用于将如图4所示在半导体元件4的上面中也具有外部引出电极5的半导体芯片9设置到半导体芯片2与中间基板3之间的半导体装置。另外，由半导体芯片2以及1个或者多个半导体芯片9构成的半导体元件相当于本发明的“第1基板”的一个例子。另外，本发明还可以同样地应用于例如如图5所示在中间基板3上设置了多个半导体芯片2的半导体装置。另外，多个半导体芯片2相当于本发明的“第1基板”的一个例子。
在本发明的第2实施方式的接合方法中，如图7所示，对第1基板2a与第2基板3a中形成的面状体、例如铜制的膜5a、8a进行接合。在接合中，如图8所示，与第1实施方式同样地针对膜5a、8a通过氧化膜去除装置10进行了氧化膜还原处理之后，从氧化膜去除装置10中取出第1以及第2基板2a、3a，通过公知的对位装置100，以使膜5a、8a的位置对齐的方式，进行了第1以及第2基板3a、5a的对位之后，通过加热加压装置102，在比铜的融点(摄氏1085度)低的温度下加热并加压，从而接合膜5a、8a。
例如，在加热到摄氏150度而在0.3MPa下加压了的情况下，膜5a、8a没有接合，但在摄氏200度下加热而在0.3MPa下加压了的情况、加热到摄氏250度而在0.3MPa下加热了的情况下，各个膜5a、8a接合。另外，即使在进行了氧化膜还原处理之后，在60秒期间放置于大气中之后进行了加热以及加压，膜5a、8a也接合。
在本发明的第3实施方式的接合方法中，如图9所示，对第1基板2b与第2基板3b中形成的线状体、例如融点是摄氏120度的锡铟焊锡制的较细的框5b、8b进行接合，对框5b、8b的内部进行密封。在接合中，如图8所示，与第1实施方式同样地，针对框5b、8b通过氧化膜去除装置10进行了氧化膜还原处理之后，从氧化膜去除装置中取出第1以及第2基板2b、3b，通过公知的对位装置100，以使框5b、8b的位置对齐的方式，进行了第1以及第2基板2b、3b的对位之后，通过加热加压装置102，加热到小于融点温度的温度并加压，从而接合框5b、8b。
例如，在加热到摄氏50度而在30MPa下加压了的情况下，框5b、8b不接合，但在加热到摄氏80度而在15MPa下加压了的情况、加热到摄氏80度而在30MPa下加压了的情况、加热到摄氏100度而在15MPa下加压了的情况、加热到摄氏100度而在30MPa下加压了的情况下，框5b、8b分别接合。另外，即使在进行了氧化膜还原处理之后，在60分期间放置于大气中之后进行了加热以及加压，框5b、8b也接合。
在如第2以及第3实施方式那样膜5a、8a、框5b、8b是除了锡、锡的合金的金属的情况下，对于从氧化膜还原处理到加压前，膜5a、8a、框5b、8b被曝露的环境，根据所述实验结果，将温度、时间设为以下的条件。
Log(t)≤3(1000/T-3)(3)
t：曝露时间(min)
T：加热温度(K)
该式(3)也是通过与式(1)、(2)同样的过程导出的。
在第2以及第3实施方式中个别地使用了对位装置100以及接合装置102，但还可以使用具备对位装置的接合装置。另外，还可以使用如图10所示在1台中作为氧化膜去除装置、对位装置以及加热加压装置而发挥功能的接合装置。
在该接合装置中，将图3所示的氧化膜去除装置10配置成旋转了90度的状态。对与氧化膜去除装置10的构成要素对应的部分附加同一符号，而省略其说明。
在处理室11B中，设置有：用于载置第1基板2a或者2b的支撑台18a；以及用于载置第2基板3a或者3b的支撑台18b。支撑台18a在支撑第1基板2a或者2b的部分中，与氧化膜去除装置10的支撑台18同样地具有加热器以及冷却器(未图示)。支撑台18b也在支撑第2基板3a或者3b的部分中具有加热器以及冷却器(未图示)。这些支撑台18a以及18b分别与处理室11B的外部中设置的升降装置180a、180b结合，可以如箭头所示使支撑台18a、18b升降，通过使支撑台18a降下、使支撑台18b上升，可以对支撑台18a上的第1基板8a或者8b的膜5a或者框5b、与支撑台18b上的第2基板3a或者3b的膜8a或者框8b进行加压而接合。在该加压时，通过支撑台18a、18b内的加热器，将膜5a、5b或者框8a、8b加热到小于膜5a、5b或者框8a、8b的融点的温度。另外，在支撑台18b中，设置了用于使第1以及第2基板2a或者2b与3a或者3b对位的销200，在支撑台18a中设置了插通销200的孔(未图示)。该销200和孔作为对位装置而发挥功能。

Claims (4)

1.一种接合方法，其特征在于具备：
针对在表面中分别具有被接合物的第1以及第2基板的所述被接合物的表面，在氧化膜去除装置内进行通过氢自由基进行的氧化膜还原处理，去除上述被接合物上附着的氧化膜的过程；以及
对进行了所述氧化膜还原处理后的所述被接合物在大气中进行对位，之后对所述第1以及第2基板施加载荷而接合所述第1基板的被接合物和所述第2基板的被接合物的过程，
所述第1基板的被接合物是锡(Sn)单质、锡与铅(Pb)或银(Ag)或铜(Cu)或铟(In)或金(Au)的组合、锡与银与铜的组合、锡与铅与磷(P)或银(Ag)的组合、锡与银与铜与镍(Ni)或铋(Bi)的组合中的某一个，所述第2基板的被接合物是金或铜。
2.根据权利要求1所述的接合方法，其特征在于：在100℃至200℃的温度下进行上述施加载荷的接合，施加到上述第1以及第2基板的载荷为1MPa至6MPa。
3.根据权利要求2所述的接合方法，其特征在于：
附加接合的载荷之前的所述被接合物的在大气中放置的时间、温度处于以下所示的范围内，
Log(t)≤3(1000/T-2)(1)
t：曝露时间(min)
T：加热温度(K)。
4.一种接合装置，其特征在于具备：
针对在表面中分别具有被接合物的第1以及第2基板的所述被接合物的表面，进行通过氢自由基进行的氧化膜还原处理，去除上述被接合物上附着的氧化膜的单元；
对进行了所述氧化膜还原处理后的所述被接合物在大气中进行对位的单元；以及
在所述对位之后对所述第1以及第2基板施加载荷而接合所述第1基板的被接合物和所述第2基板的被接合物的单元，
所述第1基板的被接合物是锡(Sn)单质、锡与铅(Pb)或银(Ag)或铜(Cu)或铟(In)或金(Au)的组合、锡与银与铜的组合、锡与铅与磷(P)或银(Ag)的组合、锡与银与铜与镍(Ni)或铋(Bi)的组合中的某一个，所述第2基板的被接合物是金或铜。
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