CN102017193A - 具有双面钝化的半导体发光器件 - Google Patents
具有双面钝化的半导体发光器件 Download PDFInfo
- Publication number
- CN102017193A CN102017193A CN2008801282116A CN200880128211A CN102017193A CN 102017193 A CN102017193 A CN 102017193A CN 2008801282116 A CN2008801282116 A CN 2008801282116A CN 200880128211 A CN200880128211 A CN 200880128211A CN 102017193 A CN102017193 A CN 102017193A
- Authority
- CN
- China
- Prior art keywords
- layer
- doping semiconductor
- passivation layer
- semiconductor layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000006798 recombination Effects 0.000 claims abstract description 9
- 238000005215 recombination Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 101
- 238000005530 etching Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2008/000581 WO2009117845A1 (en) | 2008-03-25 | 2008-03-25 | Semiconductor light-emitting device with double-sided passivation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102017193A true CN102017193A (zh) | 2011-04-13 |
CN102017193B CN102017193B (zh) | 2012-05-30 |
Family
ID=41112905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801282116A Active CN102017193B (zh) | 2008-03-25 | 2008-03-25 | 具有双面钝化的半导体发光器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7943942B2 (zh) |
EP (1) | EP2257997A4 (zh) |
JP (1) | JP2011517851A (zh) |
KR (1) | KR20110006652A (zh) |
CN (1) | CN102017193B (zh) |
WO (1) | WO2009117845A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108292697A (zh) * | 2015-11-19 | 2018-07-17 | 欧司朗光电半导体有限公司 | 发光二极管芯片和用于制造发光二极管芯片的方法 |
CN110943149A (zh) * | 2019-12-20 | 2020-03-31 | 佛山市国星半导体技术有限公司 | 一种抗水解红光led芯片及其制作方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5288852B2 (ja) * | 2008-03-21 | 2013-09-11 | スタンレー電気株式会社 | 半導体素子の製造方法 |
EP2257997A4 (en) * | 2008-03-25 | 2014-09-17 | Lattice Power Jiangxi Corp | SEMICONDUCTOR LIGHT ARRANGEMENT WITH DOUBLE-SIDED PASSIVATION |
KR20090119596A (ko) | 2008-05-16 | 2009-11-19 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101072034B1 (ko) | 2009-10-15 | 2011-10-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101081193B1 (ko) * | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101014013B1 (ko) * | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101182920B1 (ko) * | 2010-07-05 | 2012-09-13 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US8563334B2 (en) * | 2010-09-14 | 2013-10-22 | Tsmc Solid State Lighting Ltd. | Method to remove sapphire substrate |
US8754424B2 (en) | 2011-08-29 | 2014-06-17 | Micron Technology, Inc. | Discontinuous patterned bonds for semiconductor devices and associated systems and methods |
US9076923B2 (en) * | 2012-02-13 | 2015-07-07 | Epistar Corporation | Light-emitting device manufacturing method |
JP2012169667A (ja) * | 2012-05-11 | 2012-09-06 | Toshiba Corp | 半導体発光素子及びその製造方法 |
KR101967837B1 (ko) | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
US9105813B1 (en) * | 2014-05-30 | 2015-08-11 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
KR102412409B1 (ko) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
WO2019181309A1 (ja) * | 2018-03-19 | 2019-09-26 | ソニー株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2806423B2 (ja) * | 1996-03-08 | 1998-09-30 | 日本電気株式会社 | 面発光型半導体素子 |
DE69839300T2 (de) * | 1997-12-15 | 2009-04-16 | Philips Lumileds Lighting Company, LLC, San Jose | Licht-emittierende Vorrichtung |
JP4220683B2 (ja) * | 2001-03-27 | 2009-02-04 | パナソニック株式会社 | 半導体装置 |
EP2105977B1 (en) * | 2002-01-28 | 2014-06-25 | Nichia Corporation | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element |
US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
JP4325232B2 (ja) * | 2003-03-18 | 2009-09-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
KR100593886B1 (ko) * | 2003-06-24 | 2006-07-03 | 삼성전기주식회사 | 질화갈륨계 반도체 발광소자의 제조방법 |
KR100580623B1 (ko) * | 2003-08-04 | 2006-05-16 | 삼성전자주식회사 | 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법 |
JP2005203604A (ja) * | 2004-01-16 | 2005-07-28 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体光素子 |
CN100561758C (zh) * | 2004-10-22 | 2009-11-18 | 首尔Opto仪器股份有限公司 | 氮化镓化合物半导体发光元件及其制造方法 |
US7195944B2 (en) * | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
US7432119B2 (en) * | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
CN1697205A (zh) * | 2005-04-15 | 2005-11-16 | 南昌大学 | 在硅衬底上制备铟镓铝氮薄膜及发光器件的方法 |
CN100388515C (zh) | 2005-09-30 | 2008-05-14 | 晶能光电(江西)有限公司 | 半导体发光器件及其制造方法 |
KR100708936B1 (ko) * | 2005-10-17 | 2007-04-17 | 삼성전기주식회사 | 플립칩용 질화물계 반도체 발광소자 |
CN100483755C (zh) * | 2005-11-17 | 2009-04-29 | 上海蓝光科技有限公司 | 大功率led倒装芯片及其制作方法 |
JP2007184503A (ja) * | 2006-01-10 | 2007-07-19 | Mitsubishi Chemicals Corp | 半導体部材及びその製造方法 |
CN100362673C (zh) * | 2006-01-18 | 2008-01-16 | 北京工业大学 | 一种提高半导体发光二极管光提取效率的表面钝化方法 |
CN100479207C (zh) * | 2006-01-24 | 2009-04-15 | 北京太时芯光科技有限公司 | 一种高光提取效率的发光二极管及其制备方法 |
CN101295758B (zh) * | 2007-04-29 | 2013-03-06 | 晶能光电(江西)有限公司 | 含有碳基衬底的铟镓铝氮发光器件以及其制造方法 |
EP2257997A4 (en) * | 2008-03-25 | 2014-09-17 | Lattice Power Jiangxi Corp | SEMICONDUCTOR LIGHT ARRANGEMENT WITH DOUBLE-SIDED PASSIVATION |
WO2010002070A1 (en) * | 2008-06-30 | 2010-01-07 | Korea Institute Of Oriental Medicine | Method for grouping 3d models to classify constitution |
CN102067346B (zh) * | 2008-08-19 | 2013-09-04 | 晶能光电(江西)有限公司 | 具有钝化层的半导体发光器件及其制造方法 |
-
2008
- 2008-03-25 EP EP08715033.0A patent/EP2257997A4/en not_active Withdrawn
- 2008-03-25 KR KR1020107020645A patent/KR20110006652A/ko not_active Application Discontinuation
- 2008-03-25 JP JP2011501078A patent/JP2011517851A/ja active Pending
- 2008-03-25 CN CN2008801282116A patent/CN102017193B/zh active Active
- 2008-03-25 US US12/093,508 patent/US7943942B2/en active Active
- 2008-03-25 WO PCT/CN2008/000581 patent/WO2009117845A1/en active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108292697A (zh) * | 2015-11-19 | 2018-07-17 | 欧司朗光电半导体有限公司 | 发光二极管芯片和用于制造发光二极管芯片的方法 |
US10580938B2 (en) | 2015-11-19 | 2020-03-03 | Osram Oled Gmbh | Light-emitting diode chip, and method for manufacturing a light-emitting diode chip |
CN108292697B (zh) * | 2015-11-19 | 2020-03-06 | 欧司朗光电半导体有限公司 | 发光二极管芯片和用于制造发光二极管芯片的方法 |
CN110943149A (zh) * | 2019-12-20 | 2020-03-31 | 佛山市国星半导体技术有限公司 | 一种抗水解红光led芯片及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2257997A1 (en) | 2010-12-08 |
US20110001120A1 (en) | 2011-01-06 |
WO2009117845A1 (en) | 2009-10-01 |
JP2011517851A (ja) | 2011-06-16 |
CN102017193B (zh) | 2012-05-30 |
KR20110006652A (ko) | 2011-01-20 |
US7943942B2 (en) | 2011-05-17 |
EP2257997A4 (en) | 2014-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102017193B (zh) | 具有双面钝化的半导体发光器件 | |
CN102067346B (zh) | 具有钝化层的半导体发光器件及其制造方法 | |
CN102067345A (zh) | 用于制备具有双面钝化的半导体发光器件的方法 | |
US7064356B2 (en) | Flip chip light emitting diode with micromesas and a conductive mesh | |
JP2006086489A (ja) | 静電気放電防止機能を有する窒化物半導体発光素子 | |
KR20060109378A (ko) | 수직구조 질화물 반도체 발광소자의 제조방법 | |
CN101621099A (zh) | 电路结构 | |
CN101840967A (zh) | 铟镓铝氮半导体发光器件及其制备方法 | |
TWI437737B (zh) | 發光二極體結構及其製造方法 | |
US20110253972A1 (en) | LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM | |
KR20110077707A (ko) | 수직형 발광 다이오드 및 그 제조방법 | |
CN103650175A (zh) | 半导体发光器件及其制造方法 | |
KR100982988B1 (ko) | 수직구조 반도체 발광소자 및 그 제조방법 | |
CN102067340B (zh) | 具有在p-型层内钝化的半导体发光器件 | |
KR101072200B1 (ko) | 발광소자 및 그 제조방법 | |
KR20110085726A (ko) | 반도체 발광소자 및 이를 제조하는 방법 | |
CN102119449A (zh) | 具有高反射欧姆电极的半导体发光器件 | |
KR101220407B1 (ko) | 반도체 발광 소자 | |
KR100813229B1 (ko) | 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법 | |
CN102067337A (zh) | 具有硅胶保护层的半导体发光器件 | |
KR101205831B1 (ko) | 반도체 발광소자 및 그 제조방법 | |
KR20150041957A (ko) | 장벽층을 포함하는 범프 및 이를 포함하는 발광 소자 | |
TW202427826A (zh) | 發光元件 | |
CN118231547A (zh) | 微型led显示芯片及其形成方法 | |
TWI493759B (zh) | 發光二極體結構及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110413 Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2012360000083 Denomination of invention: Semiconductor light-emitting device with double-sided passivation Granted publication date: 20120530 License type: Common License Record date: 20121213 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2012360000083 Date of cancellation: 20220228 |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: LATTICE POWER (JIANGXI) Corp. |