CN102017100B - 用于准分子固化的方法和设备 - Google Patents

用于准分子固化的方法和设备 Download PDF

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Publication number
CN102017100B
CN102017100B CN2009801141127A CN200980114112A CN102017100B CN 102017100 B CN102017100 B CN 102017100B CN 2009801141127 A CN2009801141127 A CN 2009801141127A CN 200980114112 A CN200980114112 A CN 200980114112A CN 102017100 B CN102017100 B CN 102017100B
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China
Prior art keywords
chamber
excimer lamp
wall
equipment
tubular body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2009801141127A
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English (en)
Chinese (zh)
Other versions
CN102017100A (zh
Inventor
迪米特里·卢伯米尔斯基
穆罕默德·M·拉希德
怡利·Y·叶
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H01S3/0385—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
    • H05H1/245—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using internal electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
CN2009801141127A 2008-04-22 2009-04-16 用于准分子固化的方法和设备 Expired - Fee Related CN102017100B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/107,281 US8022377B2 (en) 2008-04-22 2008-04-22 Method and apparatus for excimer curing
US12/107,281 2008-04-22
PCT/US2009/040809 WO2009131889A2 (en) 2008-04-22 2009-04-16 Method and apparatus for excimer curing

Publications (2)

Publication Number Publication Date
CN102017100A CN102017100A (zh) 2011-04-13
CN102017100B true CN102017100B (zh) 2012-11-28

Family

ID=41200336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801141127A Expired - Fee Related CN102017100B (zh) 2008-04-22 2009-04-16 用于准分子固化的方法和设备

Country Status (6)

Country Link
US (1) US8022377B2 (enExample)
JP (1) JP5319758B2 (enExample)
KR (1) KR20110005721A (enExample)
CN (1) CN102017100B (enExample)
TW (1) TW201009947A (enExample)
WO (1) WO2009131889A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103766000B (zh) * 2011-06-03 2018-04-10 株式会社和广武 Cvd装置以及cvd膜的制造方法
WO2013161866A1 (ja) * 2012-04-25 2013-10-31 三菱レイヨン株式会社 積層体及び製造方法
CN103872557B (zh) * 2012-12-11 2016-09-28 中国科学院大连化学物理研究所 一种非均匀电极单重态氧发生装置
US20140230770A1 (en) * 2013-02-20 2014-08-21 University Of Southern California Transient plasma electrode for radical generation
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
FR3053169B1 (fr) * 2016-06-28 2018-08-10 Thales Dispositif de generation d'un rayonnement laser et procede de fabrication associe
CN108242412B (zh) * 2016-12-26 2020-06-23 台湾积体电路制造股份有限公司 半导体元件固化装置、基材处理系统以及半导体元件固化方法
US10381200B2 (en) * 2017-03-08 2019-08-13 Applied Materials, Inc. Plasma chamber with tandem processing regions
KR102453361B1 (ko) * 2018-05-18 2022-10-07 삼성전자주식회사 다중 경화 장치 및 다중 경화 장치를 이용한 반도체 칩의 제조 방법
US20210057864A1 (en) * 2019-08-19 2021-02-25 Iradion Laser, Inc. Enhanced waveguide surface in gas lasers

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763806A (en) * 1950-11-24 1956-09-18 Hanovia Chemical & Mfg Co Vapor electric discharge device
US3641560A (en) * 1969-02-24 1972-02-08 Path Computer Equipment Inc High-speed illumination apparatus
US3733709A (en) * 1971-05-06 1973-05-22 Sun Chemical Corp Reflector and cooling means therefor
CH677292A5 (enExample) * 1989-02-27 1991-04-30 Asea Brown Boveri
CH680099A5 (enExample) * 1990-05-22 1992-06-15 Asea Brown Boveri
US5359255A (en) * 1991-07-25 1994-10-25 Hamamatsu Photonics K.K. Discharge tube having a double-tube type structure
US5405368A (en) * 1992-10-20 1995-04-11 Esc Inc. Method and apparatus for therapeutic electromagnetic treatment
JP3025414B2 (ja) * 1994-09-20 2000-03-27 ウシオ電機株式会社 誘電体バリア放電ランプ装置
US5838108A (en) * 1996-08-14 1998-11-17 Fusion Uv Systems, Inc. Method and apparatus for starting difficult to start electrodeless lamps using a field emission source
US6015759A (en) * 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
DE19810455C2 (de) * 1998-03-11 2000-02-24 Michael Bisges Kaltlicht-UV-Bestrahlungsvorrichtung
US6376972B1 (en) * 1998-11-19 2002-04-23 The United States Of America As Represented By The United States Department Of Energy Powerful glow discharge excilamp
JP3439679B2 (ja) * 1999-02-01 2003-08-25 株式会社オーク製作所 高輝度光照射装置
US6343089B1 (en) * 1999-08-25 2002-01-29 College Of William & Mary Microwave-driven ultraviolet light sources
US6130512A (en) * 1999-08-25 2000-10-10 College Of William & Mary Rf capacitively-coupled electrodeless light source
JP3591393B2 (ja) * 1999-11-02 2004-11-17 ウシオ電機株式会社 誘電体バリア放電ランプ装置
JP3418581B2 (ja) * 2000-02-07 2003-06-23 株式会社オーク製作所 誘電体バリア放電ランプ
JP3385259B2 (ja) * 2000-03-15 2003-03-10 株式会社エム・ディ・コム 誘電体バリヤ放電ランプ及びそれを利用したドライ洗浄装置
TWI251506B (en) * 2000-11-01 2006-03-21 Shinetsu Eng Co Ltd Excimer UV photo reactor
US6723293B2 (en) * 2000-12-12 2004-04-20 Nytrox 1, Inc. System and method for treating cooling tower water
US20020074290A1 (en) * 2000-12-18 2002-06-20 Jensen Lonald H. System and method for treating drinking water
US6759664B2 (en) * 2000-12-20 2004-07-06 Alcatel Ultraviolet curing system and bulb
JP2003197152A (ja) * 2001-12-25 2003-07-11 Harison Toshiba Lighting Corp 誘電体バリア放電ランプ、誘電体バリア放電ランプ部品、放電ランプ点灯装置及び光照射装置
US6739716B2 (en) * 2002-06-10 2004-05-25 Océ Display Graphics Systems, Inc. Systems and methods for curing a fluid
US7137695B2 (en) * 2003-09-30 2006-11-21 Konica Minolta Medical & Graphics, Inc. Inkjet recording apparatus
JP3972126B2 (ja) * 2004-05-28 2007-09-05 独立行政法人産業技術総合研究所 紫外線発生源、紫外線照射処理装置及び半導体製造装置
JP2006134705A (ja) 2004-11-05 2006-05-25 Harison Toshiba Lighting Corp 誘電体バリア放電ランプを用いた光照射装置
WO2006079982A1 (en) * 2005-01-28 2006-08-03 Philips Intellectual Property & Standards Gmbh Treatment system comprising a dielectric barrier discharge lamp
DE102005006656A1 (de) * 2005-02-14 2006-08-17 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielektrische Barriere-Entladungslampe in Doppelrohrkonfiguration
US7517814B2 (en) * 2005-03-30 2009-04-14 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
US20090039757A1 (en) * 2005-04-22 2009-02-12 Hiroyoshi Ohshima Excimer Lamp
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20070028618A1 (en) * 2005-07-25 2007-02-08 General Electric Company Mixer assembly for combustor of a gas turbine engine having a main mixer with improved fuel penetration
JP4400547B2 (ja) * 2005-10-28 2010-01-20 ウシオ電機株式会社 エキシマランプ及びエキシマランプを搭載した紫外線照射装置
US7909595B2 (en) 2006-03-17 2011-03-22 Applied Materials, Inc. Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections
JP5019156B2 (ja) * 2006-08-21 2012-09-05 ウシオ電機株式会社 エキシマランプ装置
US7501292B2 (en) * 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2006-134705A 2006.05.25

Also Published As

Publication number Publication date
WO2009131889A2 (en) 2009-10-29
KR20110005721A (ko) 2011-01-18
TW201009947A (en) 2010-03-01
CN102017100A (zh) 2011-04-13
JP5319758B2 (ja) 2013-10-16
US8022377B2 (en) 2011-09-20
JP2011518444A (ja) 2011-06-23
US20090261276A1 (en) 2009-10-22
WO2009131889A3 (en) 2010-02-18
WO2009131889A9 (en) 2009-12-30

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SE01 Entry into force of request for substantive examination
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Applicant after: Applied Materials Inc.

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