JP2011518444A - エキシマ硬化処理のための方法および装置 - Google Patents
エキシマ硬化処理のための方法および装置 Download PDFInfo
- Publication number
- JP2011518444A JP2011518444A JP2011506361A JP2011506361A JP2011518444A JP 2011518444 A JP2011518444 A JP 2011518444A JP 2011506361 A JP2011506361 A JP 2011506361A JP 2011506361 A JP2011506361 A JP 2011506361A JP 2011518444 A JP2011518444 A JP 2011518444A
- Authority
- JP
- Japan
- Prior art keywords
- wall
- chamber
- tubular body
- excimer
- excimer lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000011261 inert gas Substances 0.000 claims abstract description 25
- 238000005286 illumination Methods 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 39
- 239000011810 insulating material Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 6
- 238000001723 curing Methods 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 238000003848 UV Light-Curing Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- -1 mercury halide Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
- H01S3/0385—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
- H05H1/245—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using internal electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Fluid Mechanics (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
本出願は、2006年11月3日に出願し、本出願の譲受人であるApplied Materialsに譲渡されている、共同譲渡の米国特許出願公開第2007/0295012号、名称「Nitrogen Enriched Cooling Air Module for UV Curing System」に関連する。関連出願の全体の内容は、すべての目的のために引用によって本明細書中に取り込まれている。
Claims (25)
- ハウジング壁を有するハウジングと、
前記ハウジング内に設けられた電極と、
前記電極の周囲にある、外壁および内壁を含む管状ボディであって、少なくとも1種の不活性ガスが前記外壁と前記内壁との間にある、管状ボディと、を備え、前記ハウジング壁および前記電極が、硬化処理用のエキシマ光で照明するために、前記不活性ガスを励起させるように構成される、
エキシマ放射を発生させるための装置。 - 前記管状ボディの前記外壁に隣接し、前記エキシマ光を反射するように構成された反射鏡をさらに備え、前記反射鏡が前記ハウジング壁と電気的に接続される、請求項1に記載の装置。
- 前記反射鏡が前記外壁の周囲で実質的に半円柱状になっている、請求項2に記載の装置。
- 圧力が前記電極と前記管状ボディとの間の空間内に与えられ、前記電極および前記ハウジング壁が前記空間内のガスを実質的に励起させないようにする、請求項1に記載の装置。
- 前記管状ボディが前記電極の周囲にあり、前記電極が前記ハウジング内で露出されないようにする、請求項1に記載の装置。
- 前記管状ボディが前記内壁および前記外壁に接触する隔壁を含み、前記管状ボディが第1の端部および第2の端部を含み、前記隔壁が前記第1の端部に隣接する第1の区域を前記第2の端部に隣接する第2の区域から隔てる、請求項1に記載の装置。
- 前記隔壁が前記ハウジング壁に実質的に隣接する、請求項6に記載の装置。
- 前記管状ボディが前記ハウジング壁に隣接する端部を有する絶縁性材料領域を含む、請求項1に記載の装置。
- 前記管状ボディが、前記ハウジングのハウジング壁中へ延びる第1の端部および前記ハウジング内で延びる第2の端部を有し、前記内壁が前記第2の端部に隣接する領域において前記外壁から隔てられる、請求項1に記載の装置。
- 基板処理領域を定めるチャンバと、
前記チャンバ内でその底部領域に設けられた基板支持部と、
前記基板支持部から隔てられ、前記基板支持部の上方に置かれた基板に対して放射を発生し透過させるように構成された少なくとも1つのエキシマランプと、
を備え、前記少なくとも1つのエキシマランプの各々が、
電極と、
前記電極の周囲にある、外壁および内壁を含む管状ボディであって、少なくとも1種の不活性ガスが前記外壁と前記内壁との間にある、管状ボディと、
前記管状ボディの前記外壁に隣接する反射鏡と、を備え、
前記反射鏡および前記電極が、硬化処理用のエキシマ光で照明するために、前記不活性ガスを励起させるように構成される、
絶縁性材料のエキシマ硬化処理のための装置。 - 圧力が前記電極と前記管状ボディとの間の空間内に与えられ、前記電極および前記反射鏡が前記空間内のガスを励起させないようにする、請求項10に記載の装置。
- 前記管状ボディが前記電極の周囲にあり、前記電極が前記チャンバ内で露出されないようにする、請求項10に記載の装置。
- 前記反射鏡が前記外壁の周囲で実質的に半円柱状になっている、請求項10に記載の装置。
- 前記管状ボディが前記内壁および前記外壁に接触する隔壁を備え、前記管状ボディが第1の端部および第2の端部を有し、前記隔壁が前記第1の端部に隣接する第1の区域を前記第2の端部に隣接する第2の区域から隔てる、請求項10に記載の装置。
- 前記隔壁が前記チャンバのチャンバ壁に実質的に隣接する、請求項14に記載の装置。
- 前記管状ボディが前記チャンバのチャンバ壁に隣接する端部を有する絶縁性材料領域を含む、請求項10に記載の装置。
- 前記管状ボディが、前記チャンバのチャンバ壁中へ延びる第1の端部および前記チャンバ内で延びる第2の端部を有し、前記内壁が前記第2の端部に隣接する領域において前記外壁から隔てられる、請求項10に記載の装置。
- 前記管状ボディが、前記チャンバのチャンバ壁中へ延びる第1の端部および前記チャンバ内で延びる第2の端部を有し、前記第2の端部が前記チャンバの第2の側壁から隔てられる、請求項10に記載の装置。
- 前記管状ボディが、前記チャンバの第1のチャンバ壁中へ延びる第1の端部および前記チャンバの第2のチャンバ壁内で延びる第2の端部を有する、請求項10に記載の装置。
- 前記少なくとも1つのエキシマランプが第1のエキシマランプおよび第2のエキシマランプを含み、前記第1のエキシマランプが、前記チャンバの第1の側壁において固定され、前記チャンバの中心に向けて延び、前記第2のエキシマランプが、前記チャンバの前記第1の側壁に対向する前記チャンバの第2の側壁において固定され、前記チャンバの中心に向けて延びる、請求項10に記載の装置。
- 前記少なくとも1つのエキシマランプが第1のエキシマランプおよび第2のエキシマランプを含み、前記第1のエキシマランプおよび前記第2のエキシマランプが前記チャンバの側壁を貫通して実質的に平行に設けられる、請求項10に記載の装置。
- 前記第1のエキシマランプおよび前記第2のエキシマランプが前記チャンバの中心近くに設けられる、請求項21に記載の装置。
- 基板上方の絶縁性材料をエキシマ硬化させるための方法であって、前記基板がチャンバ壁を有するチャンバ内に設置され、エキシマランプが前記チャンバ内に配置されており、
エキシマ光で照明して前記絶縁性材料を硬化させるように、前記エキシマランプ内の不活性ガスを励起させるために、前記チャンバ壁と前記エキシマランプとの間に電圧降下を適用する工程、
を備える方法。 - 前記エキシマ光を発生させて前記絶縁性材料を硬化させるように、前記不活性ガスを励起させるために、前記チャンバ内で前記エキシマランプに隣接して設けられた反射鏡を実質的に接地する工程、をさらに備える、請求項23に記載の方法。
- 前記エキシマ光が、約152nm、172nm、193nm、222nm、248nm、または303nmにおいて実質的に集中する帯域幅の範囲を有する、請求項23に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/107,281 US8022377B2 (en) | 2008-04-22 | 2008-04-22 | Method and apparatus for excimer curing |
US12/107,281 | 2008-04-22 | ||
PCT/US2009/040809 WO2009131889A2 (en) | 2008-04-22 | 2009-04-16 | Method and apparatus for excimer curing |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011518444A true JP2011518444A (ja) | 2011-06-23 |
JP2011518444A5 JP2011518444A5 (ja) | 2012-06-07 |
JP5319758B2 JP5319758B2 (ja) | 2013-10-16 |
Family
ID=41200336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011506361A Expired - Fee Related JP5319758B2 (ja) | 2008-04-22 | 2009-04-16 | エキシマ硬化処理のための装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8022377B2 (ja) |
JP (1) | JP5319758B2 (ja) |
KR (1) | KR20110005721A (ja) |
CN (1) | CN102017100B (ja) |
TW (1) | TW201009947A (ja) |
WO (1) | WO2009131889A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018148207A (ja) * | 2017-03-08 | 2018-09-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | タンデム処理領域を有するプラズマチャンバ |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2717657A4 (en) * | 2011-06-03 | 2014-11-12 | Wacom | CVD DEVICE AND CVD FILM MANUFACTURING METHOD |
JP6213240B2 (ja) * | 2012-04-25 | 2017-10-18 | 三菱ケミカル株式会社 | 積層体及び製造方法 |
CN103872557B (zh) * | 2012-12-11 | 2016-09-28 | 中国科学院大连化学物理研究所 | 一种非均匀电极单重态氧发生装置 |
WO2014130697A1 (en) * | 2013-02-20 | 2014-08-28 | University Of Southern California | Transient plasma electrode for radical generation |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
FR3053169B1 (fr) | 2016-06-28 | 2018-08-10 | Thales | Dispositif de generation d'un rayonnement laser et procede de fabrication associe |
CN108242412B (zh) * | 2016-12-26 | 2020-06-23 | 台湾积体电路制造股份有限公司 | 半导体元件固化装置、基材处理系统以及半导体元件固化方法 |
KR102453361B1 (ko) * | 2018-05-18 | 2022-10-07 | 삼성전자주식회사 | 다중 경화 장치 및 다중 경화 장치를 이용한 반도체 칩의 제조 방법 |
US20210057864A1 (en) * | 2019-08-19 | 2021-02-25 | Iradion Laser, Inc. | Enhanced waveguide surface in gas lasers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003197152A (ja) * | 2001-12-25 | 2003-07-11 | Harison Toshiba Lighting Corp | 誘電体バリア放電ランプ、誘電体バリア放電ランプ部品、放電ランプ点灯装置及び光照射装置 |
JP2005340665A (ja) * | 2004-05-28 | 2005-12-08 | National Institute Of Advanced Industrial & Technology | 紫外線発生源、紫外線照射処理装置及び半導体製造装置 |
WO2006086942A2 (de) * | 2005-02-14 | 2006-08-24 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Dielektrische barriere-entladungslampe in doppelrohrkonfiguration |
JP2008043925A (ja) * | 2006-08-21 | 2008-02-28 | Ushio Inc | エキシマランプ装置 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2763806A (en) * | 1950-11-24 | 1956-09-18 | Hanovia Chemical & Mfg Co | Vapor electric discharge device |
US3641560A (en) * | 1969-02-24 | 1972-02-08 | Path Computer Equipment Inc | High-speed illumination apparatus |
US3733709A (en) * | 1971-05-06 | 1973-05-22 | Sun Chemical Corp | Reflector and cooling means therefor |
CH677292A5 (ja) * | 1989-02-27 | 1991-04-30 | Asea Brown Boveri | |
CH680099A5 (ja) * | 1990-05-22 | 1992-06-15 | Asea Brown Boveri | |
US5359255A (en) * | 1991-07-25 | 1994-10-25 | Hamamatsu Photonics K.K. | Discharge tube having a double-tube type structure |
US5405368A (en) * | 1992-10-20 | 1995-04-11 | Esc Inc. | Method and apparatus for therapeutic electromagnetic treatment |
JP3025414B2 (ja) * | 1994-09-20 | 2000-03-27 | ウシオ電機株式会社 | 誘電体バリア放電ランプ装置 |
US5838108A (en) * | 1996-08-14 | 1998-11-17 | Fusion Uv Systems, Inc. | Method and apparatus for starting difficult to start electrodeless lamps using a field emission source |
US6015759A (en) * | 1997-12-08 | 2000-01-18 | Quester Technology, Inc. | Surface modification of semiconductors using electromagnetic radiation |
DE19810455C2 (de) * | 1998-03-11 | 2000-02-24 | Michael Bisges | Kaltlicht-UV-Bestrahlungsvorrichtung |
US6376972B1 (en) * | 1998-11-19 | 2002-04-23 | The United States Of America As Represented By The United States Department Of Energy | Powerful glow discharge excilamp |
JP3439679B2 (ja) * | 1999-02-01 | 2003-08-25 | 株式会社オーク製作所 | 高輝度光照射装置 |
US6343089B1 (en) * | 1999-08-25 | 2002-01-29 | College Of William & Mary | Microwave-driven ultraviolet light sources |
US6130512A (en) * | 1999-08-25 | 2000-10-10 | College Of William & Mary | Rf capacitively-coupled electrodeless light source |
JP3591393B2 (ja) * | 1999-11-02 | 2004-11-17 | ウシオ電機株式会社 | 誘電体バリア放電ランプ装置 |
JP3418581B2 (ja) * | 2000-02-07 | 2003-06-23 | 株式会社オーク製作所 | 誘電体バリア放電ランプ |
JP3385259B2 (ja) * | 2000-03-15 | 2003-03-10 | 株式会社エム・ディ・コム | 誘電体バリヤ放電ランプ及びそれを利用したドライ洗浄装置 |
TWI251506B (en) * | 2000-11-01 | 2006-03-21 | Shinetsu Eng Co Ltd | Excimer UV photo reactor |
US6723293B2 (en) * | 2000-12-12 | 2004-04-20 | Nytrox 1, Inc. | System and method for treating cooling tower water |
US20020074290A1 (en) * | 2000-12-18 | 2002-06-20 | Jensen Lonald H. | System and method for treating drinking water |
US6759664B2 (en) * | 2000-12-20 | 2004-07-06 | Alcatel | Ultraviolet curing system and bulb |
US6739716B2 (en) * | 2002-06-10 | 2004-05-25 | Océ Display Graphics Systems, Inc. | Systems and methods for curing a fluid |
US7137695B2 (en) * | 2003-09-30 | 2006-11-21 | Konica Minolta Medical & Graphics, Inc. | Inkjet recording apparatus |
JP2006134705A (ja) | 2004-11-05 | 2006-05-25 | Harison Toshiba Lighting Corp | 誘電体バリア放電ランプを用いた光照射装置 |
WO2006079982A1 (en) * | 2005-01-28 | 2006-08-03 | Philips Intellectual Property & Standards Gmbh | Treatment system comprising a dielectric barrier discharge lamp |
US7517814B2 (en) | 2005-03-30 | 2009-04-14 | Tokyo Electron, Ltd. | Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently |
US20090039757A1 (en) * | 2005-04-22 | 2009-02-12 | Hiroyoshi Ohshima | Excimer Lamp |
US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US20060249175A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
US20070028618A1 (en) * | 2005-07-25 | 2007-02-08 | General Electric Company | Mixer assembly for combustor of a gas turbine engine having a main mixer with improved fuel penetration |
JP4400547B2 (ja) | 2005-10-28 | 2010-01-20 | ウシオ電機株式会社 | エキシマランプ及びエキシマランプを搭載した紫外線照射装置 |
US7909595B2 (en) | 2006-03-17 | 2011-03-22 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections |
US7501292B2 (en) * | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
-
2008
- 2008-04-22 US US12/107,281 patent/US8022377B2/en not_active Expired - Fee Related
-
2009
- 2009-04-16 CN CN2009801141127A patent/CN102017100B/zh not_active Expired - Fee Related
- 2009-04-16 KR KR1020107026076A patent/KR20110005721A/ko not_active Application Discontinuation
- 2009-04-16 WO PCT/US2009/040809 patent/WO2009131889A2/en active Application Filing
- 2009-04-16 JP JP2011506361A patent/JP5319758B2/ja not_active Expired - Fee Related
- 2009-04-22 TW TW098113388A patent/TW201009947A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003197152A (ja) * | 2001-12-25 | 2003-07-11 | Harison Toshiba Lighting Corp | 誘電体バリア放電ランプ、誘電体バリア放電ランプ部品、放電ランプ点灯装置及び光照射装置 |
JP2005340665A (ja) * | 2004-05-28 | 2005-12-08 | National Institute Of Advanced Industrial & Technology | 紫外線発生源、紫外線照射処理装置及び半導体製造装置 |
WO2006086942A2 (de) * | 2005-02-14 | 2006-08-24 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Dielektrische barriere-entladungslampe in doppelrohrkonfiguration |
JP2008043925A (ja) * | 2006-08-21 | 2008-02-28 | Ushio Inc | エキシマランプ装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018148207A (ja) * | 2017-03-08 | 2018-09-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | タンデム処理領域を有するプラズマチャンバ |
JP7114270B2 (ja) | 2017-03-08 | 2022-08-08 | アプライド マテリアルズ インコーポレイテッド | タンデム処理領域を有するプラズマチャンバ |
Also Published As
Publication number | Publication date |
---|---|
TW201009947A (en) | 2010-03-01 |
CN102017100A (zh) | 2011-04-13 |
WO2009131889A3 (en) | 2010-02-18 |
WO2009131889A2 (en) | 2009-10-29 |
WO2009131889A9 (en) | 2009-12-30 |
KR20110005721A (ko) | 2011-01-18 |
US20090261276A1 (en) | 2009-10-22 |
JP5319758B2 (ja) | 2013-10-16 |
US8022377B2 (en) | 2011-09-20 |
CN102017100B (zh) | 2012-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5319758B2 (ja) | エキシマ硬化処理のための装置 | |
KR101018965B1 (ko) | 처리 챔버의 고효율 uv 클리닝 | |
US7663121B2 (en) | High efficiency UV curing system | |
US8338809B2 (en) | Ultraviolet reflector with coolant gas holes and method | |
US10373823B2 (en) | Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials | |
US8203126B2 (en) | Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation | |
KR102138158B1 (ko) | 기상 화학적 노출에 의한 낮은-k 유전체 손상 리페어 | |
US7909595B2 (en) | Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections | |
US8702870B2 (en) | Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance | |
US20120132618A1 (en) | Method and apparatus for modulating wafer treatment profile in uv chamber | |
US20070257205A1 (en) | Apparatus and method for treating a substrate with uv radiation using primary and secondary reflectors | |
JP2005340665A (ja) | 紫外線発生源、紫外線照射処理装置及び半導体製造装置 | |
KR102109482B1 (ko) | 다공성 저-k 막의 유전 상수를 감소시키기 위한 방법 | |
JP5572623B2 (ja) | 基板処理チャンバを洗浄する方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120413 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120413 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130418 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130711 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |