CN102005476B - 功率金属氧化物半导体场效应晶体管及其制作方法 - Google Patents
功率金属氧化物半导体场效应晶体管及其制作方法 Download PDFInfo
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CN102005476A CN102005476A (zh) | 2011-04-06 |
CN102005476B true CN102005476B (zh) | 2013-01-02 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1539169A (zh) * | 2001-06-14 | 2004-10-20 | ͨ�ð뵼�幫˾ | 对称沟槽mosfet器件及其制造方法 |
US6858896B2 (en) * | 2001-02-19 | 2005-02-22 | Renesas Technology Corp. | Insulated gate type semiconductor device and method for fabricating the same |
CN1763974A (zh) * | 2004-10-18 | 2006-04-26 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101034716A (zh) * | 2006-03-06 | 2007-09-12 | 半导体元件工业有限责任公司 | 形成mos晶体管的方法及其结构 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6858896B2 (en) * | 2001-02-19 | 2005-02-22 | Renesas Technology Corp. | Insulated gate type semiconductor device and method for fabricating the same |
CN1539169A (zh) * | 2001-06-14 | 2004-10-20 | ͨ�ð뵼�幫˾ | 对称沟槽mosfet器件及其制造方法 |
CN1763974A (zh) * | 2004-10-18 | 2006-04-26 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101034716A (zh) * | 2006-03-06 | 2007-09-12 | 半导体元件工业有限责任公司 | 形成mos晶体管的方法及其结构 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121127 |
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Effective date of registration: 20121127 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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