CN102005476A - 功率金属氧化物半导体场效应晶体管及其制作方法 - Google Patents
功率金属氧化物半导体场效应晶体管及其制作方法 Download PDFInfo
- Publication number
- CN102005476A CN102005476A CN2009101947794A CN200910194779A CN102005476A CN 102005476 A CN102005476 A CN 102005476A CN 2009101947794 A CN2009101947794 A CN 2009101947794A CN 200910194779 A CN200910194779 A CN 200910194779A CN 102005476 A CN102005476 A CN 102005476A
- Authority
- CN
- China
- Prior art keywords
- conduction type
- contact hole
- source region
- tagma
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910194779 CN102005476B (zh) | 2009-08-28 | 2009-08-28 | 功率金属氧化物半导体场效应晶体管及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910194779 CN102005476B (zh) | 2009-08-28 | 2009-08-28 | 功率金属氧化物半导体场效应晶体管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102005476A true CN102005476A (zh) | 2011-04-06 |
CN102005476B CN102005476B (zh) | 2013-01-02 |
Family
ID=43812691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910194779 Expired - Fee Related CN102005476B (zh) | 2009-08-28 | 2009-08-28 | 功率金属氧化物半导体场效应晶体管及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102005476B (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4932088B2 (ja) * | 2001-02-19 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
US6777745B2 (en) * | 2001-06-14 | 2004-08-17 | General Semiconductor, Inc. | Symmetric trench MOSFET device and method of making same |
JP2006114834A (ja) * | 2004-10-18 | 2006-04-27 | Toshiba Corp | 半導体装置 |
US7282406B2 (en) * | 2006-03-06 | 2007-10-16 | Semiconductor Companents Industries, L.L.C. | Method of forming an MOS transistor and structure therefor |
-
2009
- 2009-08-28 CN CN 200910194779 patent/CN102005476B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102005476B (zh) | 2013-01-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10008579B2 (en) | MOSFET with integrated schottky diode | |
CN104733531A (zh) | 使用氧化物填充沟槽的双氧化物沟槽栅极功率mosfet | |
CN106206697A (zh) | 绝缘体上硅(soi)衬底上的横向双极结型晶体管(bjt) | |
CN103985746B (zh) | 沟槽型igbt器件及其制造方法 | |
CN103545364B (zh) | 自对准接触孔的小尺寸mosfet结构及制作方法 | |
CN102184862A (zh) | 沟槽功率器件的栅极沟槽的刻蚀方法 | |
CN103050541A (zh) | 一种射频ldmos器件及其制造方法 | |
KR20010102255A (ko) | 자기 정렬된 실리콘 탄화물 lmosfet | |
CN103474465B (zh) | 一种超结mosfet器件及其制造方法 | |
CN114927559A (zh) | 一种新型碳化硅基超结沟槽型mosfet及制备方法 | |
CN103299426A (zh) | 在碳化硅中具有改进的击穿电压的双极结晶体管 | |
CN103219238B (zh) | 一种全自对准的绝缘栅双极晶体管器件及其制造方法 | |
CN110429134B (zh) | 一种具有非对称原胞的igbt器件及制备方法 | |
CN111430464A (zh) | 降低开关损耗的分离栅mosfet器件及其制造方法 | |
CN101924103A (zh) | 沟槽式功率mosfet及其制造方法 | |
CN203871337U (zh) | 沟槽型igbt器件 | |
CN113690303A (zh) | 半导体器件及其制备方法 | |
CN103117309A (zh) | 一种横向功率器件结构及其制备方法 | |
CN102005476B (zh) | 功率金属氧化物半导体场效应晶体管及其制作方法 | |
CN102339851B (zh) | 具有沟槽底部多晶硅结构的功率半导体及其制造方法 | |
CN211578762U (zh) | 降低开关损耗的分离栅mosfet器件 | |
CN106298976B (zh) | 一种沟槽型肖特基二极管 | |
CN113690293B (zh) | Igbt器件及其制备方法 | |
CN203242631U (zh) | 一种全自对准的绝缘栅双极晶体管器件 | |
CN104051524A (zh) | 半导体器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121127 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121127 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130102 Termination date: 20200828 |
|
CF01 | Termination of patent right due to non-payment of annual fee |