CN101996921B - Sti的形成方法 - Google Patents
Sti的形成方法 Download PDFInfo
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- CN101996921B CN101996921B CN2009100567302A CN200910056730A CN101996921B CN 101996921 B CN101996921 B CN 101996921B CN 2009100567302 A CN2009100567302 A CN 2009100567302A CN 200910056730 A CN200910056730 A CN 200910056730A CN 101996921 B CN101996921 B CN 101996921B
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- hard mask
- nitride layer
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Application Number | Priority Date | Filing Date | Title |
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CN2009100567302A CN101996921B (zh) | 2009-08-20 | 2009-08-20 | Sti的形成方法 |
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CN2009100567302A CN101996921B (zh) | 2009-08-20 | 2009-08-20 | Sti的形成方法 |
Publications (2)
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CN101996921A CN101996921A (zh) | 2011-03-30 |
CN101996921B true CN101996921B (zh) | 2012-08-22 |
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CN2009100567302A Expired - Fee Related CN101996921B (zh) | 2009-08-20 | 2009-08-20 | Sti的形成方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107706146B (zh) * | 2016-08-08 | 2020-07-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
CN110931421A (zh) * | 2018-09-20 | 2020-03-27 | 长鑫存储技术有限公司 | 浅沟槽隔离结构及制作方法 |
CN113363134A (zh) * | 2020-03-05 | 2021-09-07 | 上海新微技术研发中心有限公司 | 沉积氧化硅薄膜的方法 |
CN111286696B (zh) * | 2020-03-24 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 半导体硬掩膜薄膜制备方法 |
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CN101996921A (zh) | 2011-03-30 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121026 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121026 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120822 Termination date: 20200820 |