CN101965635B - 将选择性钌沉积集成到半导体器件的制造中的方法 - Google Patents

将选择性钌沉积集成到半导体器件的制造中的方法 Download PDF

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CN101965635B
CN101965635B CN200880106629.7A CN200880106629A CN101965635B CN 101965635 B CN101965635 B CN 101965635B CN 200880106629 A CN200880106629 A CN 200880106629A CN 101965635 B CN101965635 B CN 101965635B
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precursor
gas
patterned substrate
metal
metal film
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CN101965635A (zh
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铃木健二
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal

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  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200880106629.7A 2007-09-11 2008-09-09 将选择性钌沉积集成到半导体器件的制造中的方法 Active CN101965635B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/853,393 US7829454B2 (en) 2007-09-11 2007-09-11 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US11/853,393 2007-09-11
PCT/IB2008/003805 WO2009060320A2 (en) 2007-09-11 2008-09-09 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device

Publications (2)

Publication Number Publication Date
CN101965635A CN101965635A (zh) 2011-02-02
CN101965635B true CN101965635B (zh) 2014-02-12

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Country Link
US (1) US7829454B2 (https=)
JP (1) JP5406191B2 (https=)
KR (1) KR101506755B1 (https=)
CN (1) CN101965635B (https=)
TW (1) TWI387051B (https=)
WO (1) WO2009060320A2 (https=)

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WO2018125052A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Selective area deposition of metal layers from hetero-pentadienyl metal complex precursors
TWI790320B (zh) * 2017-12-16 2023-01-21 美商應用材料股份有限公司 釕的選擇性原子層沉積
US10403564B2 (en) * 2017-12-30 2019-09-03 Intel Corporation Dual-damascene zero-misalignment-via process for semiconductor packaging
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Also Published As

Publication number Publication date
WO2009060320A3 (en) 2009-08-06
WO2009060320A2 (en) 2009-05-14
CN101965635A (zh) 2011-02-02
KR101506755B1 (ko) 2015-03-27
US7829454B2 (en) 2010-11-09
TW200913146A (en) 2009-03-16
JP2010539698A (ja) 2010-12-16
KR20100113475A (ko) 2010-10-21
US20090065939A1 (en) 2009-03-12
JP5406191B2 (ja) 2014-02-05
TWI387051B (zh) 2013-02-21

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