KR101506755B1 - 루테늄의 선택적 증착을 반도체 장치의 제조 과정에 통합하는 반도체 장치 제조방법 및 반도체 장치 - Google Patents

루테늄의 선택적 증착을 반도체 장치의 제조 과정에 통합하는 반도체 장치 제조방법 및 반도체 장치 Download PDF

Info

Publication number
KR101506755B1
KR101506755B1 KR1020107006378A KR20107006378A KR101506755B1 KR 101506755 B1 KR101506755 B1 KR 101506755B1 KR 1020107006378 A KR1020107006378 A KR 1020107006378A KR 20107006378 A KR20107006378 A KR 20107006378A KR 101506755 B1 KR101506755 B1 KR 101506755B1
Authority
KR
South Korea
Prior art keywords
precursor
gas
vapor
metal film
patterned substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107006378A
Other languages
English (en)
Korean (ko)
Other versions
KR20100113475A (ko
Inventor
켄지 스즈키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20100113475A publication Critical patent/KR20100113475A/ko
Application granted granted Critical
Publication of KR101506755B1 publication Critical patent/KR101506755B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020107006378A 2007-09-11 2008-09-09 루테늄의 선택적 증착을 반도체 장치의 제조 과정에 통합하는 반도체 장치 제조방법 및 반도체 장치 Active KR101506755B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/853,393 US7829454B2 (en) 2007-09-11 2007-09-11 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US11/853,393 2007-09-11
PCT/IB2008/003805 WO2009060320A2 (en) 2007-09-11 2008-09-09 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device

Publications (2)

Publication Number Publication Date
KR20100113475A KR20100113475A (ko) 2010-10-21
KR101506755B1 true KR101506755B1 (ko) 2015-03-27

Family

ID=40430967

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107006378A Active KR101506755B1 (ko) 2007-09-11 2008-09-09 루테늄의 선택적 증착을 반도체 장치의 제조 과정에 통합하는 반도체 장치 제조방법 및 반도체 장치

Country Status (6)

Country Link
US (1) US7829454B2 (https=)
JP (1) JP5406191B2 (https=)
KR (1) KR101506755B1 (https=)
CN (1) CN101965635B (https=)
TW (1) TWI387051B (https=)
WO (1) WO2009060320A2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US8242019B2 (en) * 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
DE102009021488A1 (de) * 2009-05-15 2010-12-16 Globalfoundries Dresden Module One Llc & Co. Kg Verbessertes Elektromigrationsverhalten von Kupferleitungen in Metallisierungssystemen von Halbleiterbauelementen durch Legierung von Oberflächen
US8178439B2 (en) 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
US8232200B1 (en) 2011-03-18 2012-07-31 International Business Machines Corporation Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby
US8921228B2 (en) 2011-10-04 2014-12-30 Imec Method for selectively depositing noble metals on metal/metal nitride substrates
EP2584588B1 (en) * 2011-10-21 2017-10-04 Imec Method of forming MIM capacitor with Ru-comprising oxygen diffusion barrier
JP6257217B2 (ja) * 2013-08-22 2018-01-10 東京エレクトロン株式会社 Ｃｕ配線構造の形成方法
KR102321209B1 (ko) * 2014-11-03 2021-11-02 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10002834B2 (en) * 2015-03-11 2018-06-19 Applied Materials, Inc. Method and apparatus for protecting metal interconnect from halogen based precursors
US9524935B2 (en) 2015-05-13 2016-12-20 Globalfoundries Inc. Filling cavities in an integrated circuit and resulting devices
US9576894B2 (en) * 2015-06-03 2017-02-21 GlobalFoundries, Inc. Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same
JP7066929B2 (ja) 2015-06-05 2022-05-16 東京エレクトロン株式会社 インターコネクトのためのルテニウムメタルによるフィーチャ充填
US9768063B1 (en) * 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US9947590B1 (en) * 2016-10-14 2018-04-17 Globalfoundries Inc. Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell
WO2018125052A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Selective area deposition of metal layers from hetero-pentadienyl metal complex precursors
TWI790320B (zh) * 2017-12-16 2023-01-21 美商應用材料股份有限公司 釕的選擇性原子層沉積
US10403564B2 (en) * 2017-12-30 2019-09-03 Intel Corporation Dual-damascene zero-misalignment-via process for semiconductor packaging
US10818557B2 (en) 2018-07-03 2020-10-27 Globalfoundries Inc. Integrated circuit structure to reduce soft-fail incidence and method of forming same
JP2020043139A (ja) * 2018-09-06 2020-03-19 東京エレクトロン株式会社 埋め込み方法及び処理システム
US11164780B2 (en) * 2019-06-07 2021-11-02 Applied Materials, Inc. Process integration approach for selective metal via fill
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US20240412981A1 (en) * 2023-06-09 2024-12-12 Entegris, Inc. Selective ruthenium deposition and related systems and methods
US20250154643A1 (en) * 2023-11-14 2025-05-15 Tokyo Electron Limited Area selective deposition of metals for electronic devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128680A (ja) * 2004-10-26 2006-05-18 Asm Japan Kk 集積回路内での金属層の選択的形成
KR20060072415A (ko) * 2004-12-23 2006-06-28 동부일렉트로닉스 주식회사 다마신법을 이용한 구리 배선층을 갖는 반도체 소자 및 그형성 방법
US20060220248A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
KR20070000436A (ko) * 2004-03-31 2007-01-02 동경 엘렉트론 주식회사 금속 층을 형성하는 방법 및 장치

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851895A (en) * 1985-05-06 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Metallization for integrated devices
US4929468A (en) * 1988-03-18 1990-05-29 The United States Of America As Represented By The United States Department Of Energy Formation of amorphous metal alloys by chemical vapor deposition
US4938999A (en) * 1988-07-11 1990-07-03 Jenkin William C Process for coating a metal substrate by chemical vapor deposition using a metal carbonyl
US5171610A (en) * 1990-08-28 1992-12-15 The Regents Of The University Of Calif. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
US5314727A (en) * 1992-07-28 1994-05-24 Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota Chemical vapor deposition of iron, ruthenium, and osmium
US5359787A (en) 1993-04-16 1994-11-01 Air Products And Chemicals, Inc. High purity bulk chemical delivery system
CA2206217C (en) 1997-05-27 2003-01-07 Miroslav Milinkovic Nickel carbonyl vapour deposition process
US6074945A (en) 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6063705A (en) * 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
EP1131475A1 (en) 1998-11-03 2001-09-12 Chemical Vapour Deposition Systems Inc. Nickel carbonyl vapour deposition apparatus and process
US6319832B1 (en) * 1999-02-19 2001-11-20 Micron Technology, Inc. Methods of making semiconductor devices
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
US6444263B1 (en) * 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
KR100366639B1 (ko) * 2001-03-23 2003-01-06 삼성전자 주식회사 다공성 산화막 플러그에 의한 저저항 컨택 형성방법 및이를 이용한 반도체 장치의 형성방법
JP4160277B2 (ja) * 2001-06-29 2008-10-01 株式会社東芝 半導体装置の製造方法
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
US6420583B1 (en) * 2001-09-27 2002-07-16 Praxair Technology, Inc Methods of synthesizing ruthenium and osmium compounds
US6713373B1 (en) * 2002-02-05 2004-03-30 Novellus Systems, Inc. Method for obtaining adhesion for device manufacture
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
JP3992588B2 (ja) 2002-10-23 2007-10-17 東京エレクトロン株式会社 成膜方法
US6989321B2 (en) * 2003-09-30 2006-01-24 Tokyo Electron Limited Low-pressure deposition of metal layers from metal-carbonyl precursors
US7078341B2 (en) 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors
US7107998B2 (en) * 2003-10-16 2006-09-19 Novellus Systems, Inc. Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US20050110142A1 (en) * 2003-11-26 2005-05-26 Lane Michael W. Diffusion barriers formed by low temperature deposition
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US20060113675A1 (en) * 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
JP2006179599A (ja) * 2004-12-21 2006-07-06 Toshiba Corp 半導体装置およびその製造方法
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US7288479B2 (en) * 2005-03-31 2007-10-30 Tokyo Electron Limited Method for forming a barrier/seed layer for copper metallization
US20070059502A1 (en) * 2005-05-05 2007-03-15 Applied Materials, Inc. Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer
US7402519B2 (en) * 2005-06-03 2008-07-22 Intel Corporation Interconnects having sealing structures to enable selective metal capping layers
JP2007043018A (ja) * 2005-08-05 2007-02-15 Toshiba Corp 半導体装置
US7713876B2 (en) * 2005-09-28 2010-05-11 Tokyo Electron Limited Method for integrating a ruthenium layer with bulk copper in copper metallization
US7215006B2 (en) * 2005-10-07 2007-05-08 International Business Machines Corporation Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement
US7785658B2 (en) * 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7439624B2 (en) * 2006-05-18 2008-10-21 International Business Machines Corporation Enhanced mechanical strength via contacts
US8034406B2 (en) * 2006-09-26 2011-10-11 Tokyo Electron Limited Integrated substrate processing in a vacuum processing tool
US20080081464A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Method of integrated substrated processing using a hot filament hydrogen radical souce
US7592257B2 (en) * 2007-05-14 2009-09-22 Tokyo Electron Limited Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming
US7884018B2 (en) * 2007-06-21 2011-02-08 International Business Machines Corporation Method for improving the selectivity of a CVD process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070000436A (ko) * 2004-03-31 2007-01-02 동경 엘렉트론 주식회사 금속 층을 형성하는 방법 및 장치
JP2006128680A (ja) * 2004-10-26 2006-05-18 Asm Japan Kk 集積回路内での金属層の選択的形成
KR20060072415A (ko) * 2004-12-23 2006-06-28 동부일렉트로닉스 주식회사 다마신법을 이용한 구리 배선층을 갖는 반도체 소자 및 그형성 방법
US20060220248A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers

Also Published As

Publication number Publication date
WO2009060320A3 (en) 2009-08-06
WO2009060320A2 (en) 2009-05-14
CN101965635A (zh) 2011-02-02
US7829454B2 (en) 2010-11-09
CN101965635B (zh) 2014-02-12
TW200913146A (en) 2009-03-16
JP2010539698A (ja) 2010-12-16
KR20100113475A (ko) 2010-10-21
US20090065939A1 (en) 2009-03-12
JP5406191B2 (ja) 2014-02-05
TWI387051B (zh) 2013-02-21

Similar Documents

Publication Publication Date Title
KR101506755B1 (ko) 루테늄의 선택적 증착을 반도체 장치의 제조 과정에 통합하는 반도체 장치 제조방법 및 반도체 장치
US7776740B2 (en) Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
TWI436428B (zh) 釕金屬覆蓋層之形成方法
US20120252210A1 (en) Method for modifying metal cap layers in semiconductor devices
TWI382496B (zh) 將保形釕層整合至具高縱橫比特徵之銅金屬化結構的方法
US8440563B2 (en) Film forming method and processing system
US8076241B2 (en) Methods for multi-step copper plating on a continuous ruthenium film in recessed features
WO2008039593A1 (en) Method for integrated substrate processing in copper metallization
US8653665B2 (en) Barrier layer, film forming method, and processing system
KR101351711B1 (ko) 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치
TWI663277B (zh) 釕膜之成膜方法及成膜裝置，以及半導體裝置之製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180302

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190305

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20200302

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000