CN101952936B - 用于193纳米光刻法的双层光敏性可溶于显影剂的底部减反射涂层 - Google Patents

用于193纳米光刻法的双层光敏性可溶于显影剂的底部减反射涂层 Download PDF

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Publication number
CN101952936B
CN101952936B CN2009801060149A CN200980106014A CN101952936B CN 101952936 B CN101952936 B CN 101952936B CN 2009801060149 A CN2009801060149 A CN 2009801060149A CN 200980106014 A CN200980106014 A CN 200980106014A CN 101952936 B CN101952936 B CN 101952936B
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China
Prior art keywords
antireflection coatings
value
coatings
polymer
antireflection
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CN2009801060149A
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Chinese (zh)
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CN101952936A (zh
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J·梅多
D·格雷罗
R·-M·梅尔卡多
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Brewer Science Inc
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Brewer Science Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2009801060149A 2008-02-22 2009-02-19 用于193纳米光刻法的双层光敏性可溶于显影剂的底部减反射涂层 Active CN101952936B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3083008P 2008-02-22 2008-02-22
US61/030,830 2008-02-22
PCT/US2009/034540 WO2009105556A2 (fr) 2008-02-22 2009-02-19 Revêtements en double couche, solubles dans un développeur, photosensibles, et à fond antiréfléchissant pour lithographie 193-nm

Publications (2)

Publication Number Publication Date
CN101952936A CN101952936A (zh) 2011-01-19
CN101952936B true CN101952936B (zh) 2013-09-18

Family

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CN2009801060149A Active CN101952936B (zh) 2008-02-22 2009-02-19 用于193纳米光刻法的双层光敏性可溶于显影剂的底部减反射涂层

Country Status (7)

Country Link
US (1) US9638999B2 (fr)
EP (1) EP2255377B1 (fr)
JP (1) JP4918162B2 (fr)
KR (1) KR101697789B1 (fr)
CN (1) CN101952936B (fr)
TW (1) TWI430051B (fr)
WO (1) WO2009105556A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
JP5840954B2 (ja) * 2009-02-19 2016-01-06 ブルーワー サイエンス アイ エヌシー． 酸感応性、現像剤可溶性の下層反射防止膜
WO2012018983A2 (fr) * 2010-08-05 2012-02-09 Brewer Science Inc. Procédés de production de structures au moyen d'une couche soluble dans un révélateur avec une technologie multicouche
JP5278406B2 (ja) * 2010-11-02 2013-09-04 信越化学工業株式会社 パターン形成方法
JP6035887B2 (ja) 2011-06-21 2016-11-30 セントラル硝子株式会社 ポジ型レジスト組成物
JP5751173B2 (ja) * 2012-01-05 2015-07-22 信越化学工業株式会社 パターン形成方法
JP6062878B2 (ja) * 2014-03-07 2017-01-18 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びレジストパターン形成方法
US9229326B2 (en) * 2014-03-14 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102222818B1 (ko) 2014-10-06 2021-03-04 삼성전자주식회사 반도체 장치의 제조 방법
JP6641687B2 (ja) * 2014-12-01 2020-02-05 大日本印刷株式会社 カラーフィルタの製造方法およびブラックマトリクス基板の製造方法
US10551165B2 (en) * 2015-05-01 2020-02-04 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
US9768022B2 (en) * 2016-01-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cross-linkable layer over a substrate

Citations (3)

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EP1298492A2 (fr) * 2001-09-26 2003-04-02 Shipley Co. L.L.C. Compositions de revêtement pour utilisation dans une photoréserve revêtue
CN1828420A (zh) * 2005-02-05 2006-09-06 罗门哈斯电子材料有限公司 与外涂的光致抗蚀剂一起使用的涂料组合物
CN1942826A (zh) * 2004-03-25 2007-04-04 Az电子材料美国公司 正性操作的可光成像的底部抗反射涂层

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JPH06230574A (ja) * 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH09205057A (ja) * 1996-01-25 1997-08-05 Hitachi Ltd 半導体装置の製造方法
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
KR100421034B1 (ko) * 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100337325B1 (ko) * 1999-12-30 2002-05-22 이계안 엔진의 고압 연료 분사 장치의 소음 저감 브라켓트
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP1757987A4 (fr) 2004-05-14 2010-04-21 Nissan Chemical Ind Ltd Composition anti-réfléchissante formant une pellicule contenant un composé éther de vinyle
JP4466879B2 (ja) * 2004-12-03 2010-05-26 日産化学工業株式会社 二層型反射防止膜を用いたフォトレジストパターンの形成方法
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
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EP1298492A2 (fr) * 2001-09-26 2003-04-02 Shipley Co. L.L.C. Compositions de revêtement pour utilisation dans une photoréserve revêtue
CN1942826A (zh) * 2004-03-25 2007-04-04 Az电子材料美国公司 正性操作的可光成像的底部抗反射涂层
CN1828420A (zh) * 2005-02-05 2006-09-06 罗门哈斯电子材料有限公司 与外涂的光致抗蚀剂一起使用的涂料组合物

Also Published As

Publication number Publication date
US9638999B2 (en) 2017-05-02
KR101697789B1 (ko) 2017-01-18
WO2009105556A3 (fr) 2009-10-15
TWI430051B (zh) 2014-03-11
US20090226672A1 (en) 2009-09-10
EP2255377B1 (fr) 2013-12-04
JP2011513772A (ja) 2011-04-28
WO2009105556A4 (fr) 2010-01-28
KR20100124303A (ko) 2010-11-26
TW200949460A (en) 2009-12-01
JP4918162B2 (ja) 2012-04-18
CN101952936A (zh) 2011-01-19
EP2255377A2 (fr) 2010-12-01
WO2009105556A2 (fr) 2009-08-27
EP2255377A4 (fr) 2011-11-09

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