CN101937912A - 基于单元的集成电路内的电源单元的布置 - Google Patents

基于单元的集成电路内的电源单元的布置 Download PDF

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Publication number
CN101937912A
CN101937912A CN2010101950573A CN201010195057A CN101937912A CN 101937912 A CN101937912 A CN 101937912A CN 2010101950573 A CN2010101950573 A CN 2010101950573A CN 201010195057 A CN201010195057 A CN 201010195057A CN 101937912 A CN101937912 A CN 101937912A
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CN
China
Prior art keywords
power supply
row
unit
cells
cell
Prior art date
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Pending
Application number
CN2010101950573A
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English (en)
Chinese (zh)
Inventor
樱林太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101937912A publication Critical patent/CN101937912A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN2010101950573A 2009-06-08 2010-05-31 基于单元的集成电路内的电源单元的布置 Pending CN101937912A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-137210 2009-06-08
JP2009137210A JP2010283269A (ja) 2009-06-08 2009-06-08 半導体装置

Publications (1)

Publication Number Publication Date
CN101937912A true CN101937912A (zh) 2011-01-05

Family

ID=43300224

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101950573A Pending CN101937912A (zh) 2009-06-08 2010-05-31 基于单元的集成电路内的电源单元的布置

Country Status (3)

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US (1) US20100308667A1 (enExample)
JP (1) JP2010283269A (enExample)
CN (1) CN101937912A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104517963A (zh) * 2013-09-27 2015-04-15 飞思卡尔半导体公司 状态保持电源选通单元
CN109786369A (zh) * 2017-11-14 2019-05-21 台湾积体电路制造股份有限公司 包括标准单元的半导体器件
CN110634860A (zh) * 2018-06-25 2019-12-31 株式会社索思未来 半导体装置
US12211851B2 (en) 2017-11-14 2025-01-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including standard cells

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292629B (zh) * 2015-11-25 2021-11-05 株式会社索思未来 半导体集成电路装置
US10109619B2 (en) 2016-06-06 2018-10-23 Qualcomm Incorporated Methods and apparatus for using split N-well cells in a merged N-well block

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1283308A (zh) * 1997-12-26 2001-02-07 株式会社日立制作所 半导体集成电路
US20080093632A1 (en) * 2006-10-19 2008-04-24 Nec Electronics Corporation Size-reduced layout of cell-based integrated circuit with power switch
US20090078968A1 (en) * 2001-03-05 2009-03-26 Panasonic Corporation Integrated circuit device and method for forming the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148464A (ja) * 1999-11-18 2001-05-29 Toshiba Microelectronics Corp 半導体集積回路
JP4820542B2 (ja) * 2004-09-30 2011-11-24 パナソニック株式会社 半導体集積回路
JP2007095787A (ja) * 2005-09-27 2007-04-12 Nec Electronics Corp 半導体集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1283308A (zh) * 1997-12-26 2001-02-07 株式会社日立制作所 半导体集成电路
US20090078968A1 (en) * 2001-03-05 2009-03-26 Panasonic Corporation Integrated circuit device and method for forming the same
US20080093632A1 (en) * 2006-10-19 2008-04-24 Nec Electronics Corporation Size-reduced layout of cell-based integrated circuit with power switch

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104517963A (zh) * 2013-09-27 2015-04-15 飞思卡尔半导体公司 状态保持电源选通单元
CN104517963B (zh) * 2013-09-27 2018-09-18 恩智浦美国有限公司 状态保持电源选通单元
CN109786369A (zh) * 2017-11-14 2019-05-21 台湾积体电路制造股份有限公司 包括标准单元的半导体器件
CN109786369B (zh) * 2017-11-14 2024-01-09 台湾积体电路制造股份有限公司 包括标准单元的半导体器件
US11935893B2 (en) 2017-11-14 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including standard cells
US12211851B2 (en) 2017-11-14 2025-01-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including standard cells
CN110634860A (zh) * 2018-06-25 2019-12-31 株式会社索思未来 半导体装置
CN110634860B (zh) * 2018-06-25 2023-04-07 株式会社索思未来 半导体装置

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Publication number Publication date
JP2010283269A (ja) 2010-12-16
US20100308667A1 (en) 2010-12-09

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Application publication date: 20110105