CN101924112B - 固态图像捕获成像装置、其制造方法、其驱动方法和电子设备 - Google Patents

固态图像捕获成像装置、其制造方法、其驱动方法和电子设备 Download PDF

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CN101924112B
CN101924112B CN2010101072193A CN201010107219A CN101924112B CN 101924112 B CN101924112 B CN 101924112B CN 2010101072193 A CN2010101072193 A CN 2010101072193A CN 201010107219 A CN201010107219 A CN 201010107219A CN 101924112 B CN101924112 B CN 101924112B
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substrate
light receiving
storage capacitor
light
receiving portion
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CN2010101072193A
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CN101924112A (zh
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神户秀夫
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2010101072193A 2009-02-05 2010-01-29 固态图像捕获成像装置、其制造方法、其驱动方法和电子设备 Expired - Fee Related CN101924112B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-025346 2009-02-05
JP2009025346A JP5375141B2 (ja) 2009-02-05 2009-02-05 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器

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CN101924112A CN101924112A (zh) 2010-12-22
CN101924112B true CN101924112B (zh) 2013-01-09

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US (2) US8614758B2 (enExample)
JP (1) JP5375141B2 (enExample)
KR (1) KR20100090197A (enExample)
CN (1) CN101924112B (enExample)
TW (1) TWI411103B (enExample)

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Publication number Priority date Publication date Assignee Title
JP5375142B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
JP4785963B2 (ja) 2009-10-09 2011-10-05 キヤノン株式会社 固体撮像装置
JP5312511B2 (ja) * 2011-04-01 2013-10-09 キヤノン株式会社 固体撮像装置
JP5377590B2 (ja) * 2011-07-08 2013-12-25 キヤノン株式会社 固体撮像装置
TWI467751B (zh) 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
US9769398B2 (en) * 2016-01-06 2017-09-19 Microsoft Technology Licensing, Llc Image sensor with large-area global shutter contact
CN108257997A (zh) * 2017-12-07 2018-07-06 德淮半导体有限公司 像素单元及其制造方法以及成像装置
CN113948541A (zh) * 2021-10-15 2022-01-18 上海韦尔半导体股份有限公司 一种高量子效率低图像拖尾像素结构与驱动时序控制方法
CN114975498A (zh) * 2022-05-09 2022-08-30 长春长光辰芯光电技术有限公司 一种尺寸可拓展的cmos图像传感器像素及电子设备

Citations (4)

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US5404039A (en) * 1992-06-03 1995-04-04 Sharp Kabushiki Kaisha Solid state imaging device and method of manufacture therefor
CN1707804A (zh) * 2004-06-04 2005-12-14 三星电子株式会社 用于减小暗电流的图像传感器及其制造方法
CN1941397A (zh) * 2005-09-29 2007-04-04 恩益禧电子股份有限公司 固态成像器件及其驱动方法
CN101197386A (zh) * 2006-12-08 2008-06-11 索尼株式会社 固体摄像装置及其制造方法和照相机

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JPH02243073A (ja) 1989-05-31 1990-09-27 Sony Corp 固体撮像装置
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JPH04268764A (ja) * 1991-02-25 1992-09-24 Sony Corp 固体撮像装置
JPH07336604A (ja) 1994-06-03 1995-12-22 Sony Corp 全画素読み出し型ｃｃｄ固体撮像素子とその信号読み出し方法
TW269744B (en) * 1994-08-08 1996-02-01 Matsushita Electron Co Ltd Solid-state imaging device and method of manufacturing the same
JP2565247B2 (ja) * 1995-04-21 1996-12-18 ソニー株式会社 固体撮像装置及びビデオカメラの露光時間制御方法
JPH1013748A (ja) * 1996-06-24 1998-01-16 Sony Corp 固体撮像装置およびその駆動方法、並びに固体撮像装置を用いたカメラ
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JP4691990B2 (ja) * 2005-01-05 2011-06-01 ソニー株式会社 固体撮像装置及びその製造方法
JP2007036609A (ja) * 2005-07-26 2007-02-08 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法および固体撮像装置
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US5404039A (en) * 1992-06-03 1995-04-04 Sharp Kabushiki Kaisha Solid state imaging device and method of manufacture therefor
CN1707804A (zh) * 2004-06-04 2005-12-14 三星电子株式会社 用于减小暗电流的图像传感器及其制造方法
CN1941397A (zh) * 2005-09-29 2007-04-04 恩益禧电子股份有限公司 固态成像器件及其驱动方法
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US8928788B2 (en) 2015-01-06
US20100194959A1 (en) 2010-08-05
JP2010182886A (ja) 2010-08-19
CN101924112A (zh) 2010-12-22
US20140049674A1 (en) 2014-02-20
US8614758B2 (en) 2013-12-24
TWI411103B (zh) 2013-10-01
TW201041128A (en) 2010-11-16
KR20100090197A (ko) 2010-08-13
JP5375141B2 (ja) 2013-12-25

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