CN101919062B - 钠/钼复合金属粉末、其产品以及光伏电池的生产方法 - Google Patents

钠/钼复合金属粉末、其产品以及光伏电池的生产方法 Download PDF

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Publication number
CN101919062B
CN101919062B CN200980102060.1A CN200980102060A CN101919062B CN 101919062 B CN101919062 B CN 101919062B CN 200980102060 A CN200980102060 A CN 200980102060A CN 101919062 B CN101919062 B CN 101919062B
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China
Prior art keywords
sodium
molybdenum
metal powder
composite metal
powder
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Expired - Fee Related
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CN200980102060.1A
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English (en)
Chinese (zh)
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CN101919062A (zh
Inventor
纳里实·戈尔
卡尔·考克斯
戴夫·浩奈克尔
艾瑞克·史密斯
克里斯·麦克鲁克
亚当·德波斯科
苏尼尔·钱德拉·扎
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Climax Engineered Materials LLC
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Climax Engineered Materials LLC
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN200980102060.1A 2008-01-11 2009-01-09 钠/钼复合金属粉末、其产品以及光伏电池的生产方法 Expired - Fee Related CN101919062B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/013,263 US20090181179A1 (en) 2008-01-11 2008-01-11 Sodium/Molybdenum Composite Metal Powders, Products Thereof, and Methods for Producing Photovoltaic Cells
US12/013,263 2008-01-11
PCT/US2009/030561 WO2009089421A1 (en) 2008-01-11 2009-01-09 Sodium/molybdenum composite metal powders, products thereof, and methods for producing photovoltaic cells

Publications (2)

Publication Number Publication Date
CN101919062A CN101919062A (zh) 2010-12-15
CN101919062B true CN101919062B (zh) 2014-02-19

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CN200980102060.1A Expired - Fee Related CN101919062B (zh) 2008-01-11 2009-01-09 钠/钼复合金属粉末、其产品以及光伏电池的生产方法

Country Status (8)

Country Link
US (3) US20090181179A1 (enExample)
EP (1) EP2232565B1 (enExample)
JP (1) JP5574978B2 (enExample)
KR (1) KR101533133B1 (enExample)
CN (1) CN101919062B (enExample)
MY (1) MY157342A (enExample)
TW (1) TWI405723B (enExample)
WO (1) WO2009089421A1 (enExample)

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US8197885B2 (en) * 2008-01-11 2012-06-12 Climax Engineered Materials, Llc Methods for producing sodium/molybdenum power compacts
EP2591133A2 (en) * 2010-07-09 2013-05-15 Climax Engineered Materials, LLC Potassium / molybdenum composite metal powders, powder blends, products thereof, and methods for producing photovoltaic cells
WO2012069995A2 (en) * 2010-11-23 2012-05-31 Somont Gmbh Methods and apparatus for applying a connection agent to atleast a connector for connection atleast a solar cell
US9150958B1 (en) 2011-01-26 2015-10-06 Apollo Precision Fujian Limited Apparatus and method of forming a sputtering target
JP5766966B2 (ja) * 2011-01-31 2015-08-19 新日鐵住金株式会社 Ｎａ含有Ｍｏターゲット及びその製造方法
US8632745B1 (en) 2012-12-21 2014-01-21 Ut-Battelle, Llc Method and apparatus for controlling stoichiometry in multicomponent materials
CN103045925B (zh) * 2013-01-29 2015-01-28 洛阳高新四丰电子材料有限公司 一种钼钠合金旋转溅射管形靶材的制备工艺
CN103160791B (zh) * 2013-03-26 2015-04-22 无锡舒玛天科新能源技术有限公司 一种钠掺杂钼平面溅射靶材的制备方法
CN103196933A (zh) * 2013-03-27 2013-07-10 金堆城钼业股份有限公司 钼化合物/钼合金粉末掺杂元素分布微观均匀性检测方法
CN103898345B (zh) * 2014-04-29 2016-04-06 金堆城钼业股份有限公司 一种钼钠合金材料的制备方法
CN104117685B (zh) * 2014-07-30 2016-08-24 金堆城钼业股份有限公司 一种钼酸钠掺杂钼粉的制备方法
CN108603295A (zh) * 2016-01-29 2018-09-28 惠普发展公司，有限责任合伙企业 金属连接的粒子制品
KR101632381B1 (ko) * 2016-02-12 2016-07-08 주식회사 엔이피 철계금속과립분말을 이용한 철계금속부품 제조방법
CN107452818A (zh) * 2017-08-16 2017-12-08 蚌埠兴科玻璃有限公司 一种铜铟镓硒薄膜太阳能电池背电极及其制备方法
US11772163B2 (en) 2018-02-09 2023-10-03 Hewlett-Packard Development Company, L.P. Three-dimensional printing systems
CN110904374B (zh) * 2019-12-17 2021-08-10 株洲硬质合金集团有限公司 一种钠掺杂钼合金材料的制备方法
CN116875946A (zh) * 2023-07-27 2023-10-13 洛阳汇晶新材料科技有限公司 一种钼钠合金靶材制备工艺
CN118808654B (zh) * 2024-09-18 2025-02-28 洛阳科威钨钼有限公司 一种高镀膜性能钼钠合金靶材的制备方法

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Publication number Publication date
US20110147208A1 (en) 2011-06-23
US8465692B2 (en) 2013-06-18
WO2009089421A1 (en) 2009-07-16
HK1151389A1 (zh) 2012-01-27
EP2232565A1 (en) 2010-09-29
KR101533133B1 (ko) 2015-07-01
CN101919062A (zh) 2010-12-15
MY157342A (en) 2016-05-31
EP2232565A4 (en) 2012-07-25
US20140342497A1 (en) 2014-11-20
TWI405723B (zh) 2013-08-21
KR20100129268A (ko) 2010-12-08
US20090181179A1 (en) 2009-07-16
JP5574978B2 (ja) 2014-08-20
TW200942492A (en) 2009-10-16
EP2232565B1 (en) 2014-03-12
JP2011511886A (ja) 2011-04-14

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