JP4228223B2 - スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末 - Google Patents
スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末 Download PDFInfo
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- JP4228223B2 JP4228223B2 JP2004130802A JP2004130802A JP4228223B2 JP 4228223 B2 JP4228223 B2 JP 4228223B2 JP 2004130802 A JP2004130802 A JP 2004130802A JP 2004130802 A JP2004130802 A JP 2004130802A JP 4228223 B2 JP4228223 B2 JP 4228223B2
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- Prior art keywords
- purity metal
- powder
- purity
- sputtering
- high purity
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000843 powder Substances 0.000 title claims description 68
- 229910052751 metal Inorganic materials 0.000 title claims description 63
- 239000002184 metal Substances 0.000 title claims description 63
- 238000004544 sputter deposition Methods 0.000 title claims description 24
- 239000002994 raw material Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002245 particle Substances 0.000 claims description 33
- 239000011734 sodium Substances 0.000 claims description 16
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 238000001159 Fisher's combined probability test Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 21
- 239000011362 coarse particle Substances 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 235000018660 ammonium molybdate Nutrition 0.000 description 2
- 239000011609 ammonium molybdate Substances 0.000 description 2
- 229940010552 ammonium molybdate Drugs 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Description
(a)スパッタ時のパーティクル発生数と焼結ターゲットの理論密度比との間には密接な関係があり、焼結ターゲットの理論密度比を98%以上にするとパーティクルの発生を著しく減少させることができること。
以上(a)〜(c)に示される研究結果を得たのである。
すなわち、表2に示される通り、上記の本発明Mo粗粒粉末1〜5および従来Mo粉末1〜5のそれぞれを原料粉末として用い、これら原料粉末に、雰囲気圧力:980Paの水素雰囲気中、700℃に2時間保持の条件で水素清浄化処理を施して、粉末表面酸化物を除去し、もって粉末表面酸素量(粉末表面吸着酸素量)で測定して、粉末全体に占める割合で100〜150ppmの範囲内の所定の酸素量に低減した状態で、それぞれ250MPaの圧力でプレス成形して直径:900mm×厚さ:12mmの寸法の円盤状圧粉体とし、この円盤状圧粉体に、圧力:100MPa、温度:1250℃、保持時間:2時間の条件でHIP処理を施して焼結し、さらに機械加工にて直径:890mm×厚さ:10mmの寸法に仕上げることにより本発明高純度金属Mo焼結ターゲット(以下、本発明ターゲットという)1〜5および従来高純度金属Mo焼結ターゲット(以下、従来ターゲットという)1〜5をそれぞれ製造した。
スパッタガス:Ar、
Arガス雰囲気圧力:0.5Pa、
スパッタ電力:43.5KW、
の条件でスパッタを行い、直径:900mmのガラス板の表面に、全面に亘って厚さ:0.6μmの高純度金属Mo薄膜(以下、Mo薄膜という)を形成した。
Claims (1)
- 粗粒化添加成分であるNa(ナトリウム)の含有量が10ppm以下に低減され、かつ99.99質量%以上の高純度を有すると共に、フィッシャー法による粒度測定で5.5〜7.5μmの平均粒径およびJIS・R1626に基づくBET値で0.1〜0.25m2/gの比表面積を有することを特徴とする、スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末。
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JP2004130802A JP4228223B2 (ja) | 2004-04-27 | 2004-04-27 | スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004130802A JP4228223B2 (ja) | 2004-04-27 | 2004-04-27 | スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005314714A JP2005314714A (ja) | 2005-11-10 |
JP4228223B2 true JP4228223B2 (ja) | 2009-02-25 |
Family
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JP2004130802A Expired - Lifetime JP4228223B2 (ja) | 2004-04-27 | 2004-04-27 | スパッタリング用高純度金属Mo焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Mo粗粒粉末 |
Country Status (1)
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JP (1) | JP4228223B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8197885B2 (en) | 2008-01-11 | 2012-06-12 | Climax Engineered Materials, Llc | Methods for producing sodium/molybdenum power compacts |
US20090181179A1 (en) * | 2008-01-11 | 2009-07-16 | Climax Engineered Materials, Llc | Sodium/Molybdenum Composite Metal Powders, Products Thereof, and Methods for Producing Photovoltaic Cells |
CN103898345B (zh) * | 2014-04-29 | 2016-04-06 | 金堆城钼业股份有限公司 | 一种钼钠合金材料的制备方法 |
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2004
- 2004-04-27 JP JP2004130802A patent/JP4228223B2/ja not_active Expired - Lifetime
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