CN101908525B - 半导体器件以及制造所述半导体器件的方法 - Google Patents

半导体器件以及制造所述半导体器件的方法 Download PDF

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Publication number
CN101908525B
CN101908525B CN201010196500.9A CN201010196500A CN101908525B CN 101908525 B CN101908525 B CN 101908525B CN 201010196500 A CN201010196500 A CN 201010196500A CN 101908525 B CN101908525 B CN 101908525B
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China
Prior art keywords
insulating film
conductive lines
insulator
conductive
film
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Expired - Fee Related
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CN201010196500.9A
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English (en)
Chinese (zh)
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CN101908525A (zh
Inventor
青木武志
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201010196500.9A 2009-06-08 2010-06-03 半导体器件以及制造所述半导体器件的方法 Expired - Fee Related CN101908525B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009137721A JP5491077B2 (ja) 2009-06-08 2009-06-08 半導体装置、及び半導体装置の製造方法
JP2009-137721 2009-06-08

Publications (2)

Publication Number Publication Date
CN101908525A CN101908525A (zh) 2010-12-08
CN101908525B true CN101908525B (zh) 2014-12-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010196500.9A Expired - Fee Related CN101908525B (zh) 2009-06-08 2010-06-03 半导体器件以及制造所述半导体器件的方法

Country Status (4)

Country Link
US (2) US8350300B2 (https=)
EP (1) EP2261968B1 (https=)
JP (1) JP5491077B2 (https=)
CN (1) CN101908525B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5422455B2 (ja) * 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP6184061B2 (ja) 2012-05-29 2017-08-23 キヤノン株式会社 積層型半導体装置及び電子機器
US8921901B1 (en) * 2013-06-10 2014-12-30 United Microelectronics Corp. Stacked CMOS image sensor and signal processor wafer structure
JP6856974B2 (ja) 2015-03-31 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN114744001A (zh) * 2015-03-31 2022-07-12 索尼半导体解决方案公司 半导体装置
US10211146B2 (en) 2016-05-12 2019-02-19 Globalfoundries Inc. Air gap over transistor gate and related method
US10157777B2 (en) * 2016-05-12 2018-12-18 Globalfoundries Inc. Air gap over transistor gate and related method
EP3506342B1 (en) * 2016-08-25 2025-04-02 Sony Semiconductor Solutions Corporation Semiconductor device, image pickup device, and method for manufacturing semiconductor device
US11502036B2 (en) * 2020-02-07 2022-11-15 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US12514017B2 (en) * 2020-07-13 2025-12-30 Sony Semiconductor Solutions Corporation Wiring structure, method of manufacturing the same, and imaging device
CN113644087A (zh) * 2021-08-10 2021-11-12 长江先进存储产业创新中心有限责任公司 相变存储器及其制造方法
US12341058B2 (en) 2022-02-04 2025-06-24 Globalfoundries Singapore Pte. Ltd. Air gap through at least two metal layers
US12610796B2 (en) 2022-06-09 2026-04-21 Globalfoundries Singapore Pte Ltd Structure including discrete dielectric member for protecting first air gap during forming of second air gap
US12500119B2 (en) 2022-06-21 2025-12-16 Globalfoundries Singapore Pte. Ltd. Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL181611C (nl) * 1978-11-14 1987-09-16 Philips Nv Werkwijze ter vervaardiging van een bedradingssysteem, alsmede een halfgeleiderinrichting voorzien van een dergelijk bedradingssysteem.
JPH0536841A (ja) 1991-08-01 1993-02-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2836542B2 (ja) * 1995-10-17 1998-12-14 日本電気株式会社 半導体装置の製造方法
JP3129284B2 (ja) * 1998-05-08 2001-01-29 日本電気株式会社 半導集積回路装置の製造方法
US6211561B1 (en) * 1998-11-16 2001-04-03 Conexant Systems, Inc. Interconnect structure and method employing air gaps between metal lines and between metal layers
JP2001015592A (ja) * 1999-06-28 2001-01-19 Sony Corp 半導体装置
US6423629B1 (en) * 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
US6984577B1 (en) * 2000-09-20 2006-01-10 Newport Fab, Llc Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers
JP3481222B2 (ja) * 2001-09-07 2003-12-22 松下電器産業株式会社 配線構造及びその設計方法
US6713835B1 (en) * 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
JP2007523465A (ja) * 2003-05-26 2007-08-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 多孔質の誘電体層とエアギャップとを有する基板の製造方法、および基板
US7071532B2 (en) * 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
US7094689B2 (en) * 2004-07-20 2006-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap interconnect structure and method thereof
JP4717598B2 (ja) 2004-12-16 2011-07-06 キヤノン株式会社 レーザー回路基板
US7214920B2 (en) * 2005-05-06 2007-05-08 Micron Technology, Inc. Pixel with spatially varying metal route positions
WO2007020688A1 (ja) * 2005-08-17 2007-02-22 Fujitsu Limited 半導体装置及びその製造方法
JP2007184788A (ja) * 2006-01-06 2007-07-19 Nikon Corp 固体撮像装置
US7557424B2 (en) * 2007-01-03 2009-07-07 International Business Machines Corporation Reversible electric fuse and antifuse structures for semiconductor devices
KR100843233B1 (ko) * 2007-01-25 2008-07-03 삼성전자주식회사 배선층의 양측벽에 인접하여 에어갭을 갖는 반도체 소자 및그 제조방법
KR100850273B1 (ko) * 2007-03-08 2008-08-04 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
US7659595B2 (en) * 2007-07-16 2010-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded bonding pad for backside illuminated image sensor
JP5036841B2 (ja) 2010-03-31 2012-09-26 株式会社日立製作所 通信システム

Also Published As

Publication number Publication date
JP2010283307A (ja) 2010-12-16
US8350300B2 (en) 2013-01-08
US20100308430A1 (en) 2010-12-09
JP5491077B2 (ja) 2014-05-14
EP2261968B1 (en) 2017-01-04
CN101908525A (zh) 2010-12-08
EP2261968A3 (en) 2012-09-12
EP2261968A2 (en) 2010-12-15
US20130122644A1 (en) 2013-05-16
US8748210B2 (en) 2014-06-10

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