CN101896828B - 薄膜磁通量闸门传感器 - Google Patents

薄膜磁通量闸门传感器 Download PDF

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Publication number
CN101896828B
CN101896828B CN200880120351.9A CN200880120351A CN101896828B CN 101896828 B CN101896828 B CN 101896828B CN 200880120351 A CN200880120351 A CN 200880120351A CN 101896828 B CN101896828 B CN 101896828B
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CN
China
Prior art keywords
layer
section
magnetic material
current conductor
magnetic field
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CN200880120351.9A
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English (en)
Chinese (zh)
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CN101896828A (zh
Inventor
W·泰帕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lyme Electronics (china) Co Ltd
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Liaisons Electroniques Mecaniques LEM SA
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/18Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
    • G01R15/183Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using transformers with a magnetic core
    • G01R15/185Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using transformers with a magnetic core with compensation or feedback windings or interacting coils, e.g. 0-flux sensors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
CN200880120351.9A 2007-12-14 2008-12-12 薄膜磁通量闸门传感器 Active CN101896828B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07024346A EP2071346A1 (en) 2007-12-14 2007-12-14 Thin film fluxgate sensor
EP07024346.4 2007-12-14
PCT/IB2008/055270 WO2009077959A1 (en) 2007-12-14 2008-12-12 Thin film fluxgate sensor

Publications (2)

Publication Number Publication Date
CN101896828A CN101896828A (zh) 2010-11-24
CN101896828B true CN101896828B (zh) 2014-12-31

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CN200880120351.9A Active CN101896828B (zh) 2007-12-14 2008-12-12 薄膜磁通量闸门传感器

Country Status (5)

Country Link
US (1) US8339133B2 (enExample)
EP (2) EP2071346A1 (enExample)
JP (1) JP5444245B2 (enExample)
CN (1) CN101896828B (enExample)
WO (1) WO2009077959A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10165276B2 (en) 2010-09-30 2018-12-25 Texas Instruments Incorporated Method and apparatus for frame coding in vertical raster scan order for HEVC
US9176203B2 (en) 2013-02-05 2015-11-03 Texas Instruments Incorporated Apparatus and method for in situ current measurement in a conductor
US9704637B2 (en) 2013-07-15 2017-07-11 Texas Instruments Incorporated Method and apparatus for demagnetizing transformer cores in closed loop magnetic current sensors
US9291648B2 (en) 2013-08-07 2016-03-22 Texas Instruments Incorporated Hybrid closed-loop/open-loop magnetic current sensor
US9229066B2 (en) 2013-08-15 2016-01-05 Texas Instruments Incorporated Integrated fluxgate magnetic sensor and excitation circuitry
US9261571B2 (en) 2013-08-15 2016-02-16 Texas Instruments Incorporated Fluxgate magnetic sensor readout apparatus
US11448711B2 (en) 2015-03-25 2022-09-20 Texas Instruments Incorporated Simulation models for integrated fluxgate magnetic sensors and other magnetic circuit components
US11092656B2 (en) 2015-05-12 2021-08-17 Texas Instruments Incorporated Fluxgate magnetic field detection method and circuit
CN109358301A (zh) * 2018-09-29 2019-02-19 河南理工大学 一种基于缝纫式线芯结构的微型磁通门传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1444237A (zh) * 2002-03-13 2003-09-24 三星电机株式会社 集成在印刷电路板中的磁通闸门传感器及其制造方法
CN1493887A (zh) * 2002-09-18 2004-05-05 三星电子株式会社 具有磁通量闸门的测定装置及其控制方法
EP1785738A2 (en) * 2005-11-09 2007-05-16 M.D. MICRO DETECTORS S.p.A. Magnetic sensor, particularly for measuring the position and movement of an object, and related manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3545074B2 (ja) * 1994-12-27 2004-07-21 独立行政法人 科学技術振興機構 半導体基板に集積される磁気検出素子及び磁気検出モジュール
US6885074B2 (en) * 2002-11-27 2005-04-26 Freescale Semiconductor, Inc. Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
JP2004184232A (ja) * 2002-12-03 2004-07-02 Matsushita Electric Ind Co Ltd 磁気検出素子及びその製造方法、並びにその磁気検出素子を用いた磁気検出装置及び方位センサ
EP1746430A1 (en) 2005-07-22 2007-01-24 Liaisons Electroniques-Mecaniques Lem S.A. Orthogonal fluxgate magnetic field sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1444237A (zh) * 2002-03-13 2003-09-24 三星电机株式会社 集成在印刷电路板中的磁通闸门传感器及其制造方法
CN1493887A (zh) * 2002-09-18 2004-05-05 三星电子株式会社 具有磁通量闸门的测定装置及其控制方法
EP1785738A2 (en) * 2005-11-09 2007-05-16 M.D. MICRO DETECTORS S.p.A. Magnetic sensor, particularly for measuring the position and movement of an object, and related manufacturing method

Also Published As

Publication number Publication date
WO2009077959A1 (en) 2009-06-25
US8339133B2 (en) 2012-12-25
EP2232286A1 (en) 2010-09-29
EP2071346A1 (en) 2009-06-17
EP2232286B1 (en) 2013-02-13
CN101896828A (zh) 2010-11-24
US20100271017A1 (en) 2010-10-28
JP2011506958A (ja) 2011-03-03
JP5444245B2 (ja) 2014-03-19

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Address after: Fribourg

Applicant after: Lem Liaisons Electron Mec

Address before: The Swiss - Les outesi

Applicant before: Liaisons Electromechanic S. A.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: LIAISONS ELECTROMECHANIC S. A. TO: RAM INTELLECTUAL PROPERTY CO., LTD.

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TR01 Transfer of patent right

Effective date of registration: 20191231

Address after: 28 Linhe street, Linhe Industrial District, Shunyi District, Beijing

Patentee after: Lyme Electronics (China) Co., Ltd.

Address before: Fribourg

Patentee before: Lem Liaisons Electron Mec