CN101876947A - 用于存储数据的方法及其系统 - Google Patents
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- G—PHYSICS
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- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
- G06F2212/1036—Life time enhancement
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- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/40—Specific encoding of data in memory or cache
- G06F2212/403—Error protection encoding, e.g. using parity or ECC codes
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7207—Details relating to flash memory management management of metadata or control data
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- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
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Abstract
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Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/433,669 | 2009-04-30 | ||
US12/433,669 US8341501B2 (en) | 2009-04-30 | 2009-04-30 | Adaptive endurance coding of non-volatile memories |
Publications (2)
Publication Number | Publication Date |
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CN101876947A true CN101876947A (zh) | 2010-11-03 |
CN101876947B CN101876947B (zh) | 2012-05-23 |
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CN2010101693292A Active CN101876947B (zh) | 2009-04-30 | 2010-04-21 | 用于存储数据的方法及其系统 |
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US (2) | US8341501B2 (zh) |
JP (2) | JP5567378B2 (zh) |
KR (1) | KR20100119492A (zh) |
CN (1) | CN101876947B (zh) |
Cited By (16)
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CN102591737A (zh) * | 2011-01-13 | 2012-07-18 | 群联电子股份有限公司 | 数据写入与读取方法、存储器控制器与存储器储存装置 |
CN102890969A (zh) * | 2011-07-20 | 2013-01-23 | 群联电子股份有限公司 | 数据处理方法、存储器控制器及存储器储存装置 |
CN102915261A (zh) * | 2012-09-04 | 2013-02-06 | 邹粤林 | 提高闪存芯片存储单元利用率的方法、装置和系统 |
TWI459396B (zh) * | 2010-12-30 | 2014-11-01 | Phison Electronics Corp | 資料寫入與讀取方法、記憶體控制器與記憶體儲存裝置 |
CN104620322A (zh) * | 2012-08-03 | 2015-05-13 | 美光科技公司 | 处于邻近数据状态之间的谷值中的存储器单元状态 |
CN104885085A (zh) * | 2012-11-28 | 2015-09-02 | 高通股份有限公司 | 跨电源域的数据传输 |
CN105095014A (zh) * | 2015-07-01 | 2015-11-25 | 清华大学 | 基于错误纠正编码数据结构的数据隐藏方法 |
CN105653391A (zh) * | 2014-11-13 | 2016-06-08 | 群联电子股份有限公司 | 数据存取方法、存储器控制电路单元及存储器储存装置 |
WO2016107272A1 (zh) * | 2014-12-29 | 2016-07-07 | 华为技术有限公司 | 固态硬盘存储设备和固态硬盘存储设备的数据存取方法 |
CN106201763A (zh) * | 2015-05-22 | 2016-12-07 | 德克萨斯仪器股份有限公司 | 双模式纠错码/可写入一次存储器编解码器 |
CN108694125A (zh) * | 2017-03-30 | 2018-10-23 | 西部数据技术公司 | 在多处理器环境中在多个任务当中分配共享的存储器 |
CN109697025A (zh) * | 2017-10-20 | 2019-04-30 | 株式会社日立制作所 | 存储装置、数据管理方法和数据管理程序的存储介质 |
CN110879807A (zh) * | 2018-09-06 | 2020-03-13 | Sap欧洲公司 | 用于快速地并且有效地访问数据的文件格式 |
CN110941566A (zh) * | 2018-09-21 | 2020-03-31 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN111638994A (zh) * | 2020-06-01 | 2020-09-08 | 长江存储科技有限责任公司 | 一种闪存存储器及其错误比特计数检测方法和系统 |
CN112309473A (zh) * | 2019-07-24 | 2021-02-02 | 三星电子株式会社 | 执行数据的状态整形的存储设备 |
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KR20100119492A (ko) | 2010-11-09 |
US20120290898A1 (en) | 2012-11-15 |
JP5567378B2 (ja) | 2014-08-06 |
US8341501B2 (en) | 2012-12-25 |
CN101876947B (zh) | 2012-05-23 |
JP2010262640A (ja) | 2010-11-18 |
US8499221B2 (en) | 2013-07-30 |
JP5764235B2 (ja) | 2015-08-19 |
US20100281340A1 (en) | 2010-11-04 |
JP2014170578A (ja) | 2014-09-18 |
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