CN101847687A - 相变化内存组件及其制造方法 - Google Patents
相变化内存组件及其制造方法 Download PDFInfo
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- CN101847687A CN101847687A CN200910130683A CN200910130683A CN101847687A CN 101847687 A CN101847687 A CN 101847687A CN 200910130683 A CN200910130683 A CN 200910130683A CN 200910130683 A CN200910130683 A CN 200910130683A CN 101847687 A CN101847687 A CN 101847687A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000008859 change Effects 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 230000036961 partial effect Effects 0.000 claims description 5
- 239000013049 sediment Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 239000012782 phase change material Substances 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 50
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
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Priority Applications (1)
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CN 200910130683 CN101847687B (zh) | 2009-03-27 | 2009-03-27 | 相变化内存组件及其制造方法 |
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CN 200910130683 CN101847687B (zh) | 2009-03-27 | 2009-03-27 | 相变化内存组件及其制造方法 |
Publications (2)
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CN101847687A true CN101847687A (zh) | 2010-09-29 |
CN101847687B CN101847687B (zh) | 2013-01-02 |
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CN 200910130683 Active CN101847687B (zh) | 2009-03-27 | 2009-03-27 | 相变化内存组件及其制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102447058A (zh) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器底部电极的制作方法 |
CN104993049A (zh) * | 2015-07-08 | 2015-10-21 | 宁波时代全芯科技有限公司 | 相变化存储装置及其制造方法 |
CN105632917A (zh) * | 2014-10-29 | 2016-06-01 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
CN106206938A (zh) * | 2015-06-01 | 2016-12-07 | 宁波时代全芯科技有限公司 | 相变化存储装置及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100356567C (zh) * | 2004-08-13 | 2007-12-19 | 中国科学院上海微系统与信息技术研究所 | 一种相变微、纳电子存储器器件及制作方法 |
CN101335328B (zh) * | 2008-08-05 | 2011-06-29 | 中国科学院上海微系统与信息技术研究所 | 一种相变存储器器件单元结构及其制作方法 |
CN100555700C (zh) * | 2008-08-05 | 2009-10-28 | 中国科学院上海微系统与信息技术研究所 | 一种提高相变存储器存储单元可靠性的结构及其制作方法 |
-
2009
- 2009-03-27 CN CN 200910130683 patent/CN101847687B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102447058A (zh) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器底部电极的制作方法 |
CN105632917A (zh) * | 2014-10-29 | 2016-06-01 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
CN106206938A (zh) * | 2015-06-01 | 2016-12-07 | 宁波时代全芯科技有限公司 | 相变化存储装置及其制造方法 |
CN106206938B (zh) * | 2015-06-01 | 2019-01-18 | 江苏时代全芯存储科技有限公司 | 相变化存储装置及其制造方法 |
CN104993049A (zh) * | 2015-07-08 | 2015-10-21 | 宁波时代全芯科技有限公司 | 相变化存储装置及其制造方法 |
CN104993049B (zh) * | 2015-07-08 | 2017-08-08 | 江苏时代全芯存储科技有限公司 | 相变化存储装置及其制造方法 |
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CN101847687B (zh) | 2013-01-02 |
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Address after: Hsinchu Science Park, Taiwan, China Applicant after: Powerflash Technology Corporation Address before: Hsinchu Science Park, Taiwan, China Applicant before: Powerchip Semiconductor Corp. |
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Free format text: CORRECT: APPLICANT; FROM: POWERCHIP SEMICONDUCTOR CORP. TO: POWERCHIP TECHNOLOGY CORPORATION |
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Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |