CN101821678B - 微光刻投射曝光设备 - Google Patents

微光刻投射曝光设备 Download PDF

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Publication number
CN101821678B
CN101821678B CN200880110591.0A CN200880110591A CN101821678B CN 101821678 B CN101821678 B CN 101821678B CN 200880110591 A CN200880110591 A CN 200880110591A CN 101821678 B CN101821678 B CN 101821678B
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CN
China
Prior art keywords
light
equipment
correction
projection
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880110591.0A
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English (en)
Chinese (zh)
Other versions
CN101821678A (zh
Inventor
奥雷利安·多多克
萨沙·布莱迪斯特尔
奥拉夫·康拉迪
阿里夫·卡齐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication date
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Publication of CN101821678A publication Critical patent/CN101821678A/zh
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Publication of CN101821678B publication Critical patent/CN101821678B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
CN200880110591.0A 2007-10-09 2008-09-29 微光刻投射曝光设备 Expired - Fee Related CN101821678B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07019674.6 2007-10-09
EP07019674A EP2048540A1 (en) 2007-10-09 2007-10-09 Microlithographic projection exposure apparatus
PCT/EP2008/008251 WO2009046895A1 (en) 2007-10-09 2008-09-29 Microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
CN101821678A CN101821678A (zh) 2010-09-01
CN101821678B true CN101821678B (zh) 2012-12-19

Family

ID=38988122

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880110591.0A Expired - Fee Related CN101821678B (zh) 2007-10-09 2008-09-29 微光刻投射曝光设备

Country Status (7)

Country Link
US (1) US8773638B2 (enExample)
EP (2) EP2048540A1 (enExample)
JP (1) JP5487110B2 (enExample)
KR (1) KR101443421B1 (enExample)
CN (1) CN101821678B (enExample)
TW (1) TWI459160B (enExample)
WO (1) WO2009046895A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010040811A1 (de) * 2010-09-15 2012-03-15 Carl Zeiss Smt Gmbh Abbildende Optik
DE102010041298A1 (de) 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
CN103201682B (zh) * 2010-11-12 2015-06-17 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
WO2012062501A1 (en) 2010-11-12 2012-05-18 Asml Netherlands B.V. Metrology method and apparatus, and device manufacturing method
DE102010062763A1 (de) * 2010-12-09 2012-06-14 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
NL2008335A (en) * 2011-04-07 2012-10-09 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of correcting a mask.
NL2009079A (en) * 2011-08-23 2013-02-27 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
KR101693950B1 (ko) 2011-09-29 2017-01-06 칼 짜이스 에스엠테 게엠베하 마이크로리소그래피 투영 노광 장치의 투영 대물 렌즈
CN102411264B (zh) * 2011-11-22 2014-07-16 上海华力微电子有限公司 光刻机投影物镜温度均衡装置及均衡方法
DE102012205096B3 (de) 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
CN105068381A (zh) * 2015-07-27 2015-11-18 江苏影速光电技术有限公司 一种曝光机光阑承载结构及曝光机光阑更换方法
DE102016205619A1 (de) 2016-04-05 2017-10-05 Carl Zeiss Smt Gmbh Abschwächungsfilter für Projektionsobjektiv, Projektionsobjektiv mit Abschwächungsfilter für Projektionsbelichtungsanlage und Projektionsbelichtungsanlage mit Projektionsobjektiv
DE102016225701A1 (de) 2016-12-21 2017-03-02 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer EUV-Lithographieanlage
TWI627440B (zh) * 2017-05-17 2018-06-21 力晶科技股份有限公司 影像亮度重配模組及影像亮度重配方法
DE102019208232A1 (de) * 2019-06-05 2020-12-10 Carl Zeiss Microscopy Gmbh Optische Anordnung und Verfahren zur Korrektur von Zentrierfehlern und/oder Winkelfehlern
TWI709810B (zh) * 2019-10-25 2020-11-11 台達電子工業股份有限公司 投影裝置
CN112711163A (zh) 2019-10-25 2021-04-27 台达电子工业股份有限公司 投影装置
DE102021210243A1 (de) 2021-09-16 2023-03-16 Carl Zeiss Smt Gmbh Optische Anordnung für die DUV-Lithographie

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678768A2 (en) * 1994-04-22 1995-10-25 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
EP0823662A2 (en) * 1996-08-07 1998-02-11 Nikon Corporation Projection exposure apparatus
CN1350185A (zh) * 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
EP1376092A2 (en) * 2002-06-21 2004-01-02 Nikon Corporation Method and device for controlling thermal distortion in elements of a lithography system
CN1639844A (zh) * 2002-01-29 2005-07-13 株式会社尼康 曝光装置和曝光方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
WO1991017483A1 (de) * 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH09329742A (ja) * 1996-06-10 1997-12-22 Nikon Corp 光学系の収差補正方法および収差補正光学系を備えた投影露光装置
JP3646757B2 (ja) * 1996-08-22 2005-05-11 株式会社ニコン 投影露光方法及び装置
JP3790833B2 (ja) * 1996-08-07 2006-06-28 株式会社ニコン 投影露光方法及び装置
JP2000019165A (ja) * 1998-06-30 2000-01-21 Shimadzu Corp ガスクロマトグラフ装置
KR100584538B1 (ko) * 1999-11-04 2006-05-30 삼성전자주식회사 마이크로미러 가동장치를 채용한 반사형 프로젝터
DE19963588C2 (de) * 1999-12-29 2002-01-10 Zeiss Carl Optische Anordnung
DE19963587B4 (de) * 1999-12-29 2007-10-04 Carl Zeiss Smt Ag Projektions-Belichtungsanlage
DE10000191B8 (de) * 2000-01-05 2005-10-06 Carl Zeiss Smt Ag Projektbelichtungsanlage der Mikrolithographie
DE10140208C2 (de) * 2001-08-16 2003-11-06 Zeiss Carl Optische Anordnung
JP2005519332A (ja) 2002-03-01 2005-06-30 カール・ツアイス・エスエムテイ・アーゲー 屈折型投影対物レンズ
TW594431B (en) * 2002-03-01 2004-06-21 Asml Netherlands Bv Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
WO2005022614A1 (ja) * 2003-08-28 2005-03-10 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
WO2007017089A1 (en) 2005-07-25 2007-02-15 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678768A2 (en) * 1994-04-22 1995-10-25 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
EP0823662A2 (en) * 1996-08-07 1998-02-11 Nikon Corporation Projection exposure apparatus
CN1350185A (zh) * 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
CN1639844A (zh) * 2002-01-29 2005-07-13 株式会社尼康 曝光装置和曝光方法
EP1376092A2 (en) * 2002-06-21 2004-01-02 Nikon Corporation Method and device for controlling thermal distortion in elements of a lithography system

Also Published As

Publication number Publication date
KR101443421B1 (ko) 2014-09-24
EP2198344A1 (en) 2010-06-23
TW200931207A (en) 2009-07-16
US8773638B2 (en) 2014-07-08
EP2198344B1 (en) 2012-08-01
EP2048540A1 (en) 2009-04-15
TWI459160B (zh) 2014-11-01
WO2009046895A1 (en) 2009-04-16
JP5487110B2 (ja) 2014-05-07
KR20100081308A (ko) 2010-07-14
JP2010541292A (ja) 2010-12-24
US20100231883A1 (en) 2010-09-16
CN101821678A (zh) 2010-09-01

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Granted publication date: 20121219

Termination date: 20200929