CN101809490A - 发光的平面元件及发光的平面元件的制造方法 - Google Patents
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Abstract
本发明涉及一种发光的平面元件及其制造方法，所述平面元件具有至少一个平面的导光元件、联接装置和产生光的元件。所述产生光的元件具有至少两个电联接端，所述电联接端与在所述联接装置上的相关联的联接线以导电的方式相连接。所述平面的导光元件以压力铸造法如此构成，使得由联接装置和产生光的元件组成的布置结构被嵌入。
Description
技术领域
本发明涉及一种发光的平面元件及一种发光的平面元件的制造方法。
背景技术
近来发光的平面元件具有重大意义。不仅在例如平面作为显示元件以平面的方式被照明的地方而且在不同种类的显示器的地方需要发光的平面元件。在此，发光平面的均匀光线分布具有特别的价值，以便以相同程度看到所有区域。长时间以来例如有液晶(LCD)显示器或者薄膜晶体管(TFT)显示器，所述显示器需要平面的照射。然而光源通常为点状的或者线状的，使得用于平面的照明的光必须分布在平面上。为此已知平面的光导体，该光导体通过相应的表面处理以适应于到光源的距离的方式将来自光导体的光退藕并且进行辐射。
该专利申请要求德国专利申请10 2007 046 520.5的优先权，其公开内容在通过参引的方式并入本文。
尤其是由于节约能源的原因尝试将常见的半导体组件用于产生光，因为其具有高效率。这种半导体组件已知也作为发光二极管(LED)。
发明内容
本发明的目的是提供一种发光的平面元件及其制造方法，该平面元件制造成在小的辐射损失的情况下具有高可靠性。该目的通过独立权利要求规定的措施实现。
尤其是通过以压力铸造法制造平面的导光元件的方式将产生光的元件和联接装置嵌入导光元件中，使得一方面通过避免相碰撞的界面实现光在导光元件中的高效率的耦合并且另一方面能够构成平面的导光元件与作为联接装置和产生光的元件的布置结构之间的稳定连接。
另外的有利构造在从属的权利要求中给出。
通过将产生光的元件设为“芯片尺寸级封装组件(Chip SizePackage)”可能的是，容易地并且在避免妨碍装配的接合线的情况下安装产生光的元件以及具有自由平面，通过该自由平面实现光在平面的导光元件中的耦合。
通过将发光二极管设为产生光的元件，能够通过合适的选择产生期望颜色的光，使得通过相同的平面导光元件获得不同的以彩色的方式发光的平面并且必须提供仅一个相应的发光二极管。
通过将转换机构涂覆在作为“芯片尺寸级封装组件”安装于联接装置的发光二极管上，防止安装的布置结构在压力铸造期间被损坏。此外，因此能够在很晚的生产时刻确定给出的颜色。
附图说明
接下来参照附图并且根据实施例描述本发明。在此，同样的附图标记规定了各个附图中的同样的元件，然而在此没有示出按照比例尺的关系。
其示出：
图1示出发光的平面元件的截面侧视图；
图2示出图1所示的发光的平面元件旋转90度的截面图；
图3示出发光二极管在带状的联接装置上的布置结构的俯视图；
图4示出带有多个发光二极管的发光的平面元件的示意图；
图5示出图3所示的由平面的导光元件挤压包封的带状材料；以及
图6示出图1所示的构造的变型方案。
具体实施方式
图1示出设有易弯曲的带状材料7的实施例，该带状材料具有隔开恒定间隔的贯通开口9。在带状材料7上设置有由导电材料组成的印制导线6。所述设置能够例如借助于印刷技术或者通过层压成形实现。在此能够不仅首先整个平面涂上印制导线6并且随后例如借助于腐蚀法得到期望的形状或者同样涂上期望的形状。最后尤其是推荐印刷技术。
此外设有例如为LED 3的产生光的元件，所述LED 3构成为所谓的“芯片尺寸级封装组件(Chip Size Package)”或者也称为CSP 1。在此所述芯片尺寸级封装组件1由载体2组成，在该载体2上构成LED 3。在载体2上(未详细示出)设有LED 3的联接触点接通。载体2另一方面具有联接触点，该联接触点例如通过柔性的凸块5与印制导线6相连接。在工作中，LED 3应当从此从远离载体2的一侧发出可视的电磁辐射。
可选地提出，在所述辐射的光的平面上涂覆转换层4，该转换层4将改变光的颜色。这意味着，辐射光的波长转变为具有另外的波长的光。以这种方式能够例如高效率地将由LED辐射的蓝光转变成白光。
至此描述的由芯片尺寸级封装组件1和设有印制导线6的带状材料7组成布置结构从此由平面的导光元件8包围，使得该布置结构嵌入平面的导光元件8中。最好按照以下方式实现嵌入，即将由芯片尺寸级封装组件1和带状材料7组成的预安装的布置结构安装在压力铸造模具中，并且然后由热塑性材料填充压力铸造模具。在压力铸造期间热塑性材料也穿过贯通开口9，使得在硬化后产生平面的导光元件8和带状材料7之间的紧密的且稳定的连接。
图2示出再旋转90度的所述构造。在此看出，平面的导光元件8的厚度约等于芯片尺寸级封装组件1的厚度。平面的导光元件8在带状材料7的远离芯片尺寸级封装组件的一侧上延伸的程度仅取决于机械前提条件。
因为光由LED 3的远离载体的一侧辐射，在带状材料7下面没有出现光的扩散和传输。然而由于稳定性的原因或者由于模塑成形的原因期望设有喷射的材料，该喷射材料不仅穿过带状材料而且还在其上向外露出，如在图中示出。
在导光的平面元件8的表面上示出两个小的隆起部10。该隆起部10示出平面构造，通过该平面构造实现光的退藕。以标准的方式将由LED辐射的光引入平面的导光元件8中以及，只要光碰到外部边缘就再次向内反射。如果光到达附图标记10标出的并且表面被改变位置，那么存在用于来自内部的光的且在表面上的改变的入射角，使得不再向内反射而是向外发射。以这种方法和方式能够通过表面的相应构造调整平面的导光元件在表面上的发射。
图3示出带有贯通开口9的带状材料7的俯视图。以有规律的间隔成对地引导印制导线6并且该印制导线6在设有待装配的芯片尺寸级封装组件1的位置上以彼此更紧密的方式被引导。贯通开口9关于其参照图1和2所述的功能此外还具有以下优点，即带状材料7来自于卷材并且随后又被卷起。贯通开口9则能够用于精确的传输或者用于带7的精确定位。这显然也适合于，即带状材料7被引入压力铸造模具中并且在那里被定位。窗式开口11的作用是，即当压力铸造时平面的导光元件绕带状材料7的四周延伸并且在此如图2所示仅略微伸出超过芯片尺寸级封装组件1。
图5以极其简化的方式示出图3所示的几乎连续的布置结构的视图，该视图相应于图1。可以这样说，平面的导光元件相应地以连续的方式如带一样构成并且以期望的间隔被分开以便在硬化后分离。根据图5在两个芯片尺寸级封装组件1之间的中心分别示出分离空隙10，沿着该分离空隙10将单个发光的平面元件分离。这例如能够通过合适的切割方法实现。
然而还可以考虑的是，要么各个压力铸造模具用于单个发光的平面元件要么压力铸造模具构造成其具有逐渐变细或者具有分离壁，使得相应地在图5中以附图标记10标出的位置上如有可能通过折断来分离各个发光的平面元件。
然而这也不是绝对必要的，对于每个发光的平面元件仅设有单个产生光的芯片尺寸级封装组件1。数量最终取决于期望的光强度和构成的和照亮的面积的大小。根据图4按照以下形式示出，即在图4示出的实施例中选择三个芯片尺寸级封装组件1。
参照图1示出，转换层4设在LED 3上，以便将由LED发出的自然光转换成期望的光。在如图6所示的构造中，布置结构仅就以下方面而言不同于图1所示的布置结构，即首先缺少转换层4。代替该转换层的是转换覆盖层4a以包围的方式涂覆芯片尺寸级封装组件1。这能够例如涂覆为水滴状或者以喷射方法涂覆。最终选择什么方法仅取决于技术可行性并且由此应当预先测试芯片尺寸级封装组件1在装配到带状材料上之前具有多大间隔。
Claims (10)
1.一种发光的平面元件，具有至少一个平面的导光元件(8)、联接装置(7、6)和产生光的元件(1)，其中所述产生光的元件(1)具有至少两个联接端(5)，所述联接端(5)与在所述联接装置(7、6)上的相关联的联接线(6)以导电的方式相连接，并且所述平面的导光元件(8)以压力铸造法构成有嵌入的由联接装置(6、7)和产生光的元件(1)组成的布置结构。
2.根据权利要求1所述的发光元件，其中所述产生光的元件(1)是构成为“芯片尺寸级封装组件”的发光二极管。
3.根据权利要求2所述的发光的平面元件，其中所述“芯片尺寸级封装组件”(1)具有载体(2)和发光二极管芯片(3)，所述载体(2)具有联接元件(5)，所述发光二极管芯片(3)以与所述联接元件(5)彼此相对的方式位于所述载体(2)上并且与所述联接元件(5)以导电的方式相连接。
4.根据前述权利要求中任一项所述的发光的平面元件，其中所述产生光的元件的发光区域由转换机构(4；4a)覆盖，所述转换机构(4；4a)将由所述产生光的元件(3)辐射的具有第一波长的光转换成与其不同的波长的光。
5.根据权利要求4所述的发光的平面元件，其中所述转换机构(4)构成为层，所述层覆盖在所述芯片3上的所述发光区域。
6.根据权利要求4所述的发光的平面元件，其中所述转换机构(4a)构成为覆盖在所述载体上的所述“芯片尺寸级封装组件”(1)。
7.根据前述权利要求中任一项所述的发光的平面元件，其中所述联接装置由带状材料(7)和设置在所述带状材料上的联接线(6)构成，并且具有沿着纵向延伸方向以有规律的间隔开口(9)，所述导光的平面元件(8)能够一体地穿透所述开口(9)。
8.发光的平面元件，其中在所述联接装置上设有多个产生光的元件(1)。
9.一种用于制造发光的平面元件的方法，其中提供联接装置，将产生光的元件设置在所述联接装置上，并且以压力铸造法制造平面的导光元件，使得所述产生光的元件和所述联接装置至少部分地嵌入所述导光元件中。
10.根据权利要求9所述的方法，其中提供作为“连续的材料”的所述联接装置并且在所述压力铸造的平面导光元件硬化后分离单个发光的平面元件。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007046520.5 | 2007-09-28 | ||
| DE102007046520A DE102007046520A1 (de) | 2007-09-28 | 2007-09-28 | Lichtemittierendes Flächenelement und Verfahren zum Herstellen eines lichtemittierenden Flächenelementes |
| PCT/DE2008/001589 WO2009039846A1 (de) | 2007-09-28 | 2008-09-26 | Lichtemittierendes flächenelement und verfahren zum herstellen eines lichtemittierenden flächenelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101809490A true CN101809490A (zh) | 2010-08-18 |
Family
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Family Applications (1)
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| CN200880109349A Pending CN101809490A (zh) | 2007-09-28 | 2008-09-26 | 发光的平面元件及发光的平面元件的制造方法 |
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| Country | Link |
|---|---|
| US (1) | US8541809B2 (zh) |
| EP (1) | EP2191324B1 (zh) |
| JP (1) | JP2010541225A (zh) |
| KR (1) | KR20100081328A (zh) |
| CN (1) | CN101809490A (zh) |
| DE (1) | DE102007046520A1 (zh) |
| TW (1) | TWI423419B (zh) |
| WO (1) | WO2009039846A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107013857A (zh) * | 2015-11-06 | 2017-08-04 | 利萨·德雷克塞迈尔有限责任公司 | 用于车辆的照明装置以及照明装置的制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI480962B (zh) * | 2009-04-09 | 2015-04-11 | Lextar Electronics Corp | 發光二極體封裝以及發光二極體晶圓級封裝製程 |
| FR3011941B1 (fr) * | 2013-10-16 | 2016-01-01 | Gb Dev | Procede de fabrication rapide d'un guide de lumiere, guide de lumiere et appareil obtenus |
| DE102018119538A1 (de) | 2018-08-10 | 2020-02-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile |
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| DE3148843C2 (de) * | 1981-12-10 | 1986-01-02 | Telefunken electronic GmbH, 7100 Heilbronn | Mehrfach-Leuchtdiodenanordnung |
| JP3170182B2 (ja) | 1995-08-15 | 2001-05-28 | 株式会社東芝 | 樹脂封止型半導体装置及びその製造方法 |
| FI108106B (fi) | 1996-11-25 | 2001-11-15 | Modular Technology Group Engin | Menetelmä johde-elementin valmistamiseksi ja johde-elementti |
| US20030102527A1 (en) * | 1997-12-31 | 2003-06-05 | Bily Wang | Method of fabricating light emitting diode package |
| JP3536728B2 (ja) * | 1998-07-31 | 2004-06-14 | セイコーエプソン株式会社 | 半導体装置及びテープキャリア並びにそれらの製造方法、回路基板、電子機器並びにテープキャリア製造装置 |
| JP3749243B2 (ja) * | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス，発光装置及び半導体発光デバイスの製造方法 |
| JP2004265986A (ja) * | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法 |
| CN100511732C (zh) * | 2003-06-18 | 2009-07-08 | 丰田合成株式会社 | 发光器件 |
| KR100568224B1 (ko) * | 2003-11-04 | 2006-04-07 | 삼성전자주식회사 | 테이프 배선 기판 및 그를 포함하는 반도체 장치 |
| TWI263356B (en) * | 2003-11-27 | 2006-10-01 | Kuen-Juei Li | Light-emitting device |
| TWI281269B (en) * | 2003-12-02 | 2007-05-11 | Hon Hai Prec Ind Co Ltd | Light emitting diode and backlight module |
| TWI241043B (en) * | 2003-12-26 | 2005-10-01 | Ind Tech Res Inst | Planar package structure for high power light emitting diode |
| US20050264194A1 (en) * | 2004-05-25 | 2005-12-01 | Ng Kee Y | Mold compound with fluorescent material and a light-emitting device made therefrom |
| KR100638721B1 (ko) * | 2005-01-28 | 2006-10-30 | 삼성전기주식회사 | 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지 |
| DE102005009066A1 (de) * | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optischen und eines strahlungsemittierenden Bauelementes und optisches sowie strahlungsemittierendes Bauelement |
| US7270446B2 (en) * | 2005-05-09 | 2007-09-18 | Lighthouse Technology Co., Ltd | Light module with combined heat transferring plate and heat transferring pipes |
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| TWI294694B (en) | 2005-06-14 | 2008-03-11 | Ind Tech Res Inst | Led wafer-level chip scale packaging |
| US20070007542A1 (en) * | 2005-07-07 | 2007-01-11 | Sumitomo Electric Industries,Ltd. | White-Light Emitting Device |
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| JP2009525614A (ja) * | 2006-01-31 | 2009-07-09 | スリーエム イノベイティブ プロパティズ カンパニー | コンプライアントなフォイル構造を有するｌｅｄ照明アセンブリ |
| US7808004B2 (en) * | 2006-03-17 | 2010-10-05 | Edison Opto Corporation | Light emitting diode package structure and method of manufacturing the same |
| KR100998233B1 (ko) * | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 ｌｅｄ 패키지 |
-
2007
- 2007-09-28 DE DE102007046520A patent/DE102007046520A1/de not_active Withdrawn
-
2008
- 2008-09-24 TW TW097136630A patent/TWI423419B/zh not_active IP Right Cessation
- 2008-09-26 EP EP08801344.6A patent/EP2191324B1/de not_active Not-in-force
- 2008-09-26 JP JP2010526164A patent/JP2010541225A/ja active Pending
- 2008-09-26 KR KR1020107009243A patent/KR20100081328A/ko not_active Application Discontinuation
- 2008-09-26 US US12/679,774 patent/US8541809B2/en not_active Expired - Fee Related
- 2008-09-26 WO PCT/DE2008/001589 patent/WO2009039846A1/de active Application Filing
- 2008-09-26 CN CN200880109349A patent/CN101809490A/zh active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107013857A (zh) * | 2015-11-06 | 2017-08-04 | 利萨·德雷克塞迈尔有限责任公司 | 用于车辆的照明装置以及照明装置的制造方法 |
| CN107013857B (zh) * | 2015-11-06 | 2023-12-12 | 利萨·德雷克塞迈尔有限责任公司 | 用于车辆的照明装置以及照明装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009039846A1 (de) | 2009-04-02 |
| US8541809B2 (en) | 2013-09-24 |
| EP2191324B1 (de) | 2017-04-05 |
| JP2010541225A (ja) | 2010-12-24 |
| TWI423419B (zh) | 2014-01-11 |
| US20100193819A1 (en) | 2010-08-05 |
| DE102007046520A1 (de) | 2009-04-02 |
| TW200921896A (en) | 2009-05-16 |
| KR20100081328A (ko) | 2010-07-14 |
| EP2191324A1 (de) | 2010-06-02 |
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