CN101807509B - 等离子体处理装置和聚焦环 - Google Patents

等离子体处理装置和聚焦环 Download PDF

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Publication number
CN101807509B
CN101807509B CN2010101475014A CN201010147501A CN101807509B CN 101807509 B CN101807509 B CN 101807509B CN 2010101475014 A CN2010101475014 A CN 2010101475014A CN 201010147501 A CN201010147501 A CN 201010147501A CN 101807509 B CN101807509 B CN 101807509B
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semiconductor wafer
ring portion
platform
periphery
electroconductive component
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CN101807509A (zh
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舆石公
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2010101475014A 2006-03-17 2007-03-16 等离子体处理装置和聚焦环 Active CN101807509B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-074372 2006-03-17
JP2006074372A JP2007250967A (ja) 2006-03-17 2006-03-17 プラズマ処理装置および方法とフォーカスリング

Related Parent Applications (1)

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CN2007100883758A Division CN101038849B (zh) 2006-03-17 2007-03-16 等离子体处理装置和方法以及聚焦环

Publications (2)

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CN101807509A CN101807509A (zh) 2010-08-18
CN101807509B true CN101807509B (zh) 2012-07-25

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CN2010101475014A Active CN101807509B (zh) 2006-03-17 2007-03-16 等离子体处理装置和聚焦环
CN2007100883758A Active CN101038849B (zh) 2006-03-17 2007-03-16 等离子体处理装置和方法以及聚焦环

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JP (1) JP2007250967A (enExample)
KR (2) KR20070094522A (enExample)
CN (2) CN101807509B (enExample)
TW (1) TWI411034B (enExample)

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JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
WO2014209492A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP5767373B2 (ja) * 2014-07-29 2015-08-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体
CN104715997A (zh) * 2015-03-30 2015-06-17 上海华力微电子有限公司 聚焦环及具有该聚焦环的等离子体处理装置
JP6570971B2 (ja) * 2015-05-27 2019-09-04 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリング
KR102382823B1 (ko) * 2015-09-04 2022-04-06 삼성전자주식회사 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6698502B2 (ja) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
CN110546733B (zh) 2017-03-31 2022-10-11 玛特森技术公司 在处理腔室中防止工件上的材料沉积
KR102063108B1 (ko) * 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
SG11202009444QA (en) * 2018-04-10 2020-10-29 Applied Materials Inc Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition
CN112166650B (zh) * 2018-05-30 2023-06-20 东芝三菱电机产业系统株式会社 活性气体生成装置
JP2019220497A (ja) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7258562B2 (ja) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7278896B2 (ja) 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102175990B1 (ko) * 2020-01-09 2020-11-09 하나머티리얼즈(주) 포커스링 및 그를 포함하는 플라즈마 장치
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
CN112839422B (zh) * 2020-12-15 2024-08-02 成都金创立科技有限责任公司 一种用于多极式等离子发生器的绝缘结构
JP7641878B2 (ja) * 2021-11-01 2025-03-07 東京エレクトロン株式会社 測定方法及び測定システム
WO2025249149A1 (ja) * 2024-05-27 2025-12-04 東京エレクトロン株式会社 載置台、およびプラズマ処理装置

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Also Published As

Publication number Publication date
TWI411034B (zh) 2013-10-01
TW200741860A (en) 2007-11-01
JP2007250967A (ja) 2007-09-27
KR20090026321A (ko) 2009-03-12
CN101038849A (zh) 2007-09-19
CN101038849B (zh) 2010-05-26
KR100959706B1 (ko) 2010-05-25
KR20070094522A (ko) 2007-09-20
CN101807509A (zh) 2010-08-18

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