CN101795132A - Potential pull-up circuit and pull-down circuit of I/O port of integrated circuit - Google Patents
Potential pull-up circuit and pull-down circuit of I/O port of integrated circuit Download PDFInfo
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- CN101795132A CN101795132A CN 201010143902 CN201010143902A CN101795132A CN 101795132 A CN101795132 A CN 101795132A CN 201010143902 CN201010143902 CN 201010143902 CN 201010143902 A CN201010143902 A CN 201010143902A CN 101795132 A CN101795132 A CN 101795132A
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Abstract
The invention discloses a potential pull-up circuit and a pull-down circuit of an I/O port of an integrated circuit. The potential pull-up circuit outputs high level when no signal is input, thus realizing level pull-up function of the I/O port and having strong noise interference resistance; whether signals are input or not, zero static power consumption can be realized; the driving capability and frequency characteristic of the flexibly-regulated I/O port can be realized by regulating the current capability of a first inverter and a second inverter which are the driving stage of the whole circuit; the potential pull-down circuit outputs low level when no signal is input, thus realizing the pull-down function of the I/O port and having strong noise interference resistance; whether signals are input or not, zero static power consumption is realized; and the driving capability and frequency characteristic of the flexibly-regulated I/O port can be realized by regulating the current capability of a third inverter and a fourth inverter which are the driving stage of the whole circuit.
Description
Technical field
The present invention relates to a kind of current potential on draw and pull-down circuit, especially relate to a kind of current potential pull-up circuit and pull-down circuit of I/O mouth of integrated circuit.
Background technology
The I/O mouth of many integrated circuits need be provided with an acquiescence level, do not have to keep under the situation of signal input current potential on draw or drop-down.A kind of simple application of drawing on the existing current potential is to form to power supply VCC by connect a fixed resistance at the I/O mouth, the drop-down a kind of simple application of current potential then is to form to ground GND by connect a fixed resistance at the I/O mouth, on this current potential, draw with pull-down circuit in also can use MOS transistor to substitute fixed resistance, current potential pull-up circuit as shown in Figure 1a and the current potential pull-down circuit shown in Fig. 1 b.Current potential pull-up circuit shown in Fig. 1 a comprises nmos pass transistor N, and the drain and gate of nmos pass transistor N is connected and is connected to jointly on the power supply VCC, and the source electrode of nmos pass transistor N is connected with the I/O mouth of integrated circuit, the substrate ground connection GND of nmos pass transistor N; Current potential pull-down circuit shown in Fig. 1 b comprises PMOS transistor P, and the drain and gate of PMOS transistor P is connected and common ground GND, and the source electrode of PMOS transistor P is connected with the I/O mouth of integrated circuit, and the substrate of PMOS transistor P meets power supply VCC.
On above-mentioned existing current potential, draw with pull-down circuit in can perhaps adjust the driving force and the frequency characteristic of drawing on the current potential according to the resistance size of fixed resistance with pull-down circuit according to the grid breadth length ratio of MOS transistor.Impedance such as the current potential pull-up circuit is more little, and then the driving force of current potential pull-up circuit is just strong more, and response frequency is just high more, and the impedance of opposite potential pull-up circuit is big more, and then the driving force of current potential pull-up circuit is just more little, and response frequency is just low more.But, in existing current potential pull-up circuit, when I/O mouth input low level, can form electric current through the overpotential pull-up circuit between power supply VCC and the I/O mouth, produce power consumption, if will reduce the grid length that power consumption just needs to strengthen resistance or increasing nmos pass transistor, but will increase the area of current potential pull-up circuit so greatly, also there is more serious contradiction simultaneously: if require the driving force of I/O mouth strong, and the response frequency height, the impedance of current potential pull-up circuit will be little so, if I/O mouth input low level in this case, then the electric current that produces through the overpotential pull-up circuit from power supply VCC to the I/O mouth will be very big, and power consumption is inevitable also can be very big.Also there be the shortcoming identical with the current potential pull-up circuit in existing current potential pull-down circuit, draws with pull-down circuit on the obvious existing current potential to be not suitable for being applied in the integrated circuit of low-power consumption, high integration.
Summary of the invention
Technical problem to be solved by this invention provides a kind of stronger antijamming capability that has, driving force and frequency characteristic that can the flexible circuit, can also guarantee effectively that simultaneously quiescent dissipation is zero, and be applicable to current potential pull-up circuit and current potential pull-down circuit in the integrated circuit of low-power consumption, high integration.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of current potential pull-up circuit of I/O mouth of integrated circuit, comprise the first delay switch control module, the one PMOS transistor, the 2nd PMOS transistor, first inverter, second inverter, first resistance and second resistance, first end of described first resistance is the input of described current potential pull-up circuit, second end of described first resistance is connected with the input of described first inverter and first end of described second resistance respectively, second end of described second resistance is connected with described the 2nd PMOS transistor drain with a described PMOS transistor drain respectively, the transistorized grid of described the 2nd PMOS is connected with the described first delay switch control module, the transistorized source electrode of described the 2nd PMOS, the transistorized substrate of described the 2nd PMOS, transistorized source electrode of a described PMOS and the transistorized substrate of a described PMOS all connect power supply, the transistorized grid of a described PMOS is connected with the output of described first inverter and the input of described second inverter respectively, and the output of described second inverter is the output of described current potential pull-up circuit.
The described first delay switch control module mainly is made up of the 5th resistance and first electric capacity, first termination power of described the 5th resistance, second end of described the 5th resistance is connected with the anode of described first electric capacity, the negativing ending grounding of described first electric capacity, the public connecting end of second end of described the 5th resistance and the anode of described first electric capacity is the output of the described first delay switch control module.
A kind of current potential pull-down circuit of I/O mouth of integrated circuit, comprise the second delay switch control module, first nmos pass transistor, second nmos pass transistor, the 3rd inverter, the 4th inverter, the 3rd resistance and the 4th resistance, first end of described the 3rd resistance is the input of described current potential pull-down circuit, second end of described the 3rd resistance is connected with the input of described the 3rd inverter and first end of described the 4th resistance respectively, second end of described the 4th resistance is connected with the drain electrode of described first nmos pass transistor and the drain electrode of described second nmos pass transistor respectively, the grid of described first nmos pass transistor is connected with the described second delay switch control module, the source electrode of described first nmos pass transistor, the substrate of described first nmos pass transistor, the equal ground connection of the substrate of the source electrode of described second nmos pass transistor and described second nmos pass transistor, the grid of described second nmos pass transistor is connected with the output of described the 3rd inverter and the input of described the 4th inverter respectively, and the output of described the 4th inverter is the output of described current potential pull-down circuit.
The described second delay switch control module mainly is made up of the 6th resistance and second electric capacity, the first end ground connection of described the 6th resistance, second end of described the 6th resistance is connected with the negative terminal of described second electric capacity, the positive termination power of described second electric capacity, the public connecting end of second end of described the 6th resistance and the negative terminal of described second electric capacity is the output of the described second delay switch control module.
Compared with prior art, the invention has the advantages that the current potential pull-up circuit is not when signal input part has the signal input, output signal is a high level, realized I/O mouth level on draw function, have stronger antinoise interference performance, when the signal input part input high level, output signal is a high level, when the signal input part input low level, output signal is a low level; No matter when being the signal input part no signal input of current potential pull-up circuit or input high level or input low level, can both realize that quiescent dissipation is zero; First inverter of current potential pull-up circuit and second inverter are as the driving stage of entire circuit, can realize the driving force and the frequency characteristic of flexible I/O mouth by the current capacity of regulating first inverter and second inverter, efficiently solve the contradiction between driving force, frequency characteristic and the quiescent dissipation of I/O mouth.When the current potential pull-down circuit does not have the signal input when signal input part, output signal is a low level, realized the pulldown function of I/O mouth level, has stronger antinoise interference performance, when the signal input part input high level, output signal is a high level, and when the signal input part input low level, output signal is a low level; No matter when being the signal input part no signal input of current potential pull-down circuit or input high level or input low level, can both realize that quiescent dissipation is zero; The 3rd inverter of current potential pull-down circuit and the 4th inverter are as the driving stage of entire circuit, can realize the driving force and the frequency characteristic of flexible I/O mouth by the current capacity of regulating the 3rd inverter and the 4th inverter, efficiently solve the contradiction between driving force, frequency characteristic and the quiescent dissipation of I/O mouth.
In addition, current potential pull-up circuit of the present invention and pull-down circuit are simple in structure, are suitable for to be applied in the integrated circuit of low-power consumption, high integration.
Description of drawings
Fig. 1 a is existing current potential pull-up circuit schematic diagram;
Fig. 1 b is existing current potential pull-down circuit schematic diagram;
Fig. 2 is a current potential pull-up circuit schematic diagram of the present invention;
Fig. 3 is a current potential pull-down circuit schematic diagram of the present invention;
Fig. 4 a is the circuit theory diagrams of the first delay switch control module of the present invention;
Fig. 4 b is the circuit theory diagrams of the second delay switch control module of the present invention;
Fig. 5 is the control signal delay of the first delay switch control module output in the current potential pull-up circuit of the present invention and the relation curve schematic diagram of supply voltage VCC;
Fig. 6 is the control signal delay of the second delay switch control module output in the current potential pull-up circuit of the present invention and the relation curve schematic diagram of supply voltage VCC.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment one: a kind of current potential pull-up circuit of I/O mouth of integrated circuit, as shown in Figure 2, it comprises the first delay switch control module delay1, the one PMOS transistor P1, the 2nd PMOS transistor P2, the first inverter U1, the second inverter U2, first resistance R 1 and second resistance R 2, first end of first resistance R 1 is the input IN1 of whole current potential pull-up circuit, second end of first resistance R 1 is connected with the input of the first inverter U1 and first end of second resistance R 2 respectively, second end of second resistance R 2 is connected with the drain electrode of a PMOS transistor P1 and the drain electrode of the 2nd PMOS transistor P2 respectively, the grid of the 2nd PMOS transistor P2 is connected with the first delay switch control module delay1, the source electrode of the 2nd PMOS transistor P2, the substrate of the 2nd PMOS transistor P2, the substrate of the source electrode of the one PMOS transistor P1 and a PMOS transistor P1 all meets power supply VCC, the grid of the one PMOS transistor P1 is connected with the output of the first inverter U1 and the input of the second inverter U2 respectively, and the output of the second inverter U2 is the output OUT1 of whole current potential pull-up circuit.
Current potential pull-up circuit of the present invention, when power supply VCC powered on, the first delay switch control module delay1 produced a switching signal, and this switching signal is controlled the 2nd PMOS transistor P2 of short duration conducting when power supply VCC powers on.
In this specific embodiment, the main effect of the first delay switch control module delay1 is: when power supply VCC powers on, this first delay switch control module delay1 produces a switching signal, controls the 2nd PMOS transistor P2 conducting, and disappears through the above-mentioned switching signal in of short duration time-delay back.As shown in Figure 5, axis of abscissas is a time shaft among Fig. 5, axis of ordinates is a voltage axis, and curve VCC represents supply voltage from no-voltage begin to rise process up to stable, and curve delay represents the process that the grid voltage of the 2nd PMOS transistor P2 changes along with supply voltage VCC.Analyze two plots changes as can be known, curve delay lags behind curve VCC, promptly has time-delay between VCC and the delay.In the time of above-mentioned time-delay, when the voltage difference of VCC and delay during greater than the threshold voltage of the 2nd PMOS transistor P2, the 2nd PMOS transistor P2 is in conducting state, when the voltage difference of VCC and delay during less than the threshold voltage of the 2nd PMOS transistor P2, the 2nd PMOS transistor P2 is in closed condition.At this, the threshold voltage of the 2nd PMOS transistor P2 is specifically determined by production technology.Therefore the main effect of the first delay switch control module is to make the 2nd PMOS transistor P2 that of short duration conducting be arranged when power supply VCC powers on.The first delay switch control module delay1 has multiple implementation, the simplest mode is to utilize electric capacity charging time-delay, shown in Fig. 4 a, it mainly is made up of the 5th resistance R 5 and first capacitor C 1, the first termination power VCC of the 5th resistance R 5, second end of the 5th resistance R 5 is connected with the anode of first capacitor C 1, the negativing ending grounding of first capacitor C 1, and the public connecting end of second end of the 5th resistance R 5 and the anode of first capacitor C 1 is the output out of the first delay switch control module delay1.Between an of short duration time delay, the current potential of first delay switch module delay1 output will be lower than one of supply voltage VCC | V
Th1|, can guarantee the 2nd PMOS transistor P2 conducting, wherein, | V
Th1| be the threshold voltage of the 2nd PMOS transistor P2.
The operating state of current potential pull-up circuit of the present invention can be divided three kinds:
First kind of operating state: if the input IN1 of current potential pull-up circuit does not have outer signal when power supply VCC powers on, so by the control signal of first delay switch control module delay1 output control that the 2nd PMOS transistor P2 conducting and second resistance R 2 form on draw path to make on the node A1 to move high level to.By the first inverter U1, Node B 1 forms low level and makes a PMOS transistor P1 conducting, forms and draws path on another.Again through second inverter U2 output high level.When the switching signal that produces as the first delay switch control module delay1 disappeared, the 2nd PMOS transistor P2 ended, on draw path to constitute by a PMOS transistor P1 and second resistance R 2.Form draw passage on stable after, a PMOS transistor P1, second resistance R 2, the first inverter U1 constitute a regenerative feedback loop, the antinoise interference performance is strong.And on draw path the lower end, just node A1 place does not arrive the discharge path of power supply ground GND, to draw passage current be 0 more than the institute, quiescent dissipation is 0.Draw the key of path to be on formation is stable, the time long enough that the control signal of first delay switch control module delay1 output exists guarantees that the 2nd PMOS transistor P2 ends again after a PMOS transistor P1 conducting.
Second kind of operating state: if the input IN1 input low level of current potential pull-up circuit when power supply VCC powers on, in the blink that the first delay switch control module delay1 exists, form current path through the 2nd PMOS transistor P2, second resistance R 2, first resistance R 1 to the input port so from power supply VCC.This moment, second resistance R 2, first resistance R 1 played metering function, had reduced the requirement to the front stage circuits driving force, and wherein, the size of the resistance value that first resistance R 1 and second resistance R 2 are concrete can be determined according to actual conditions.Simultaneously, it is suitable that the ratio of the resistance of the resistance of second resistance R 2 and first resistance R 1 need be selected, and guarantees that the current potential of node A1 is lower than the upset level of the first inverter U1.So, by the first inverter U1, Node B 1 is a high level, and a PMOS transistor P1 is in cut-off state.The signal at Node B 1 place is again by the second inverter U2 output low level.At last, when the control signal of first delay switch control module delay1 output disappeared, the 2nd PMOS transistor P2 ended, on draw path to end, the quiescent dissipation of whole current potential pull-up circuit is 0.
The third operating state: if the input IN1 input high level of current potential pull-up circuit when power supply VCC powers on, input level ratio supply voltage VCC height forms current path by first resistance R 1, second resistance R 2 and the 2nd PMOS transistor P2 so.At this moment, node A1 is a high level, and through the first inverter U1, Node B 1 is a low level, and a PMOS transistor P1 conducting forms draws path.Again through second inverter U2 output high level.Through of short duration time-delay, when the control signal of first delay switch control module delay1 output disappeared, the 2nd PMOS transistor P2 ended.When finishing when powering on, if input high level and supply voltage VCC equipotential draw path not have electric current on so, the quiescent dissipation of whole current potential pull-up circuit is 0.
Embodiment two: a kind of current potential pull-down circuit of I/O mouth of integrated circuit, as shown in Figure 3, it comprises the second delay switch control module delay2, the first nmos pass transistor N1, the second nmos pass transistor N2, the 3rd inverter U3, the 4th inverter U4, the 3rd resistance R 3 and the 4th resistance R 4, first end of the 3rd resistance R 3 is the input IN2 of whole current potential pull-down circuit, second end of the 3rd resistance R 3 is connected with the input of the 3rd inverter U3 and first end of the 4th resistance R 4 respectively, second end of the 4th resistance R 4 is connected with the drain electrode of the first nmos pass transistor N1 and the drain electrode of the second nmos pass transistor N2 respectively, the grid of the first nmos pass transistor N1 is connected with the second delay switch control module delay2, the source electrode of the first nmos pass transistor N1, the substrate of the first nmos pass transistor N1, the equal ground connection GND of the substrate of the source electrode of the second nmos pass transistor N2 and the second nmos pass transistor N2, the grid of the second nmos pass transistor N2 is connected with the output of the 3rd inverter U3 and the input of the 4th inverter U4 respectively, and the output of the 4th inverter U4 is the output OUT2 of current potential pull-down circuit.
Current potential pull-down circuit of the present invention, when power supply VCC powered on, the second delay switch control module delay2 produced a switching signal, and this switching signal is controlled the first nmos pass transistor N1 of short duration conducting when power supply VCC powers on.
In this specific embodiment, the main effect of the second delay switch control module delay2 is: when power supply VCC powers on, this second delay switch control module delay2 produces a switching signal, controls the first nmos pass transistor N1 conducting, and disappears through the above-mentioned switching signal in of short duration time-delay back.As shown in Figure 6, axis of abscissas is a time shaft among Fig. 6, axis of ordinates is a voltage axis, and curve VCC represents supply voltage from no-voltage begin to rise process up to stable, and curve delay represents the process that the first nmos pass transistor N1 grid voltage changes along with supply voltage VCC.Analyze two plots changes as can be known, when curve VCC rises, curve delay will follow curve VCC and change a period of time, be reduced to 0 gradually then.Curve delay follow that curve VCC changes during this period of time in, when the value of curve VCC rises to threshold voltage greater than the first nmos pass transistor N1, the first nmos pass transistor N1 begins conducting, when the value of curve delay was reduced to threshold voltage less than the first nmos pass transistor N1, the first nmos pass transistor N1 closed.At this, the threshold voltage of the first nmos pass transistor N1 is specifically determined by production technology.Therefore, the main effect of the second time-delay control module delay2 is to make the first nmos pass transistor N1 that of short duration conducting be arranged when power supply VCC powers on.The second delay switch control module delay2 has multiple implementation, the simplest mode is to utilize electric capacity charging time-delay, shown in Fig. 4 b, it mainly is made up of the 6th resistance R 6 and second capacitor C 2, the first end ground connection GND of the 6th resistance R 6, second end of the 6th resistance R 6 is connected with the negative terminal of second capacitor C 2, the positive termination power VCC of second capacitor C 2, the public connecting end of second end of the 6th resistance R 6 and the negative terminal of second capacitor C 2 is the output out of the second delay switch control module delay2.Between an of short duration time delay, the current potential of second delay switch module delay2 output will be higher than one of power supply ground GND | V
Th2|, can guarantee the first nmos pass transistor N1 conducting, wherein, | V
Th2| be the threshold voltage of the first nmos pass transistor N1.
The operating state of current potential pull-down circuit of the present invention can be divided three kinds:
First kind of operating state: if the input IN2 of current potential pull-down circuit does not have outer signal when power supply VCC powers on, control the drop-down path that the first nmos pass transistor N1 conducting and the 4th resistance R 4 form by the control signal of second delay switch control module delay2 output so and make node A2 maintenance low level.By the 3rd inverter U3, Node B 2 forms high level and makes the second nmos pass transistor N2 conducting, forms another drop-down path.Again through the 4th inverter U4 output low level.When the switching signal of second delay switch control module delay2 generation disappeared, the first nmos pass transistor N1 ended, and drop-down path is made of the second nmos pass transistor N2 and the 4th resistance R 4.After forming stable drop-down passage, the second nmos pass transistor N2, the 4th resistance R 4, the 3rd inverter U3 constitute a regenerative feedback loop, and the antinoise interference performance is strong.And the upper end of drop-down path, just node A2 place does not arrive the current path of power supply VCC, so drop-down passage current is 0, quiescent dissipation is 0.Form drop-down key and be, the time long enough that the control signal of second delay switch control module delay2 output exists guarantees that the first nmos pass transistor N1 ends again after the second nmos pass transistor N2 conducting.
Second kind of operating state: if the input IN2 input high level of current potential pull-down circuit when power supply VCC powers on, in the blink that the control signal that the second delay switch control module delay2 exports exists, to power supply ground GND, form current path through the first nmos pass transistor N1, the 3rd resistance R 3, the 4th resistance R 4 so from input.The 3rd resistance R 3, the 4th resistance R 4 have played metering function at this moment, have reduced the requirement for the front stage circuits driving force, and wherein, the size of the 3rd resistance R 3 and the 4th resistance R 4 concrete resistance values can be determined according to actual conditions.Simultaneously, it is suitable that the value of R2/R3 need be selected, and guarantees to be higher than at the current potential of node A2 the upset level of the 3rd inverter U3.So, by the 3rd inverter U3, Node B 2 is a low level, and the second nmos pass transistor N2 is in cut-off state.The signal at Node B 2 places is again by the 4th inverter U4 output high level.At last, when the control signal of second delay switch control module delay2 output disappeared, the first nmos pass transistor N1 ended, and drop-down path ends, and the power consumption of whole current potential pull-down circuit is 0.
The third operating state: if the input IN2 input low level of current potential pull-down circuit when power supply VCC powers on, when the control signal of second delay switch control module delay2 output exists so, form drop-down path by the 3rd resistance R 3, the 4th resistance R 4, the first nmos pass transistor N1, but do not have current path, power consumption is 0.At this moment, node A2 is a low level, and through the 3rd inverter U3, Node B 2 is a high level, and the second nmos pass transistor N2 conducting forms another drop-down path.Again through the 4th inverter U4 output low level.Through of short duration time-delay, the control signal of second delay switch control module delay2 output disappears, and the first nmos pass transistor N1 ends, but the second still conducting of nmos pass transistor N2.At this moment, form regenerative feedback loop, strong noise resisting ability is arranged by the 4th resistance R 4, the 3rd inverter U3, the second nmos pass transistor N2.After stable, do not have quiescent current, power consumption is 0.
Claims (4)
1. the current potential pull-up circuit of the I/O mouth of an integrated circuit, it is characterized in that comprising the first delay switch control module, the one PMOS transistor, the 2nd PMOS transistor, first inverter, second inverter, first resistance and second resistance, first end of described first resistance is the input of described current potential pull-up circuit, second end of described first resistance is connected with the input of described first inverter and first end of described second resistance respectively, second end of described second resistance is connected with described the 2nd PMOS transistor drain with a described PMOS transistor drain respectively, the transistorized grid of described the 2nd PMOS is connected with the described first delay switch control module, the transistorized source electrode of described the 2nd PMOS, the transistorized substrate of described the 2nd PMOS, transistorized source electrode of a described PMOS and the transistorized substrate of a described PMOS all connect power supply, the transistorized grid of a described PMOS is connected with the output of described first inverter and the input of described second inverter respectively, and the output of described second inverter is the output of described current potential pull-up circuit.
2. the current potential pull-up circuit of the I/O mouth of a kind of integrated circuit according to claim 1, it is characterized in that the described first delay switch control module mainly is made up of the 5th resistance and first electric capacity, first termination power of described the 5th resistance, second end of described the 5th resistance is connected with the anode of described first electric capacity, the negativing ending grounding of described first electric capacity, the public connecting end of second end of described the 5th resistance and the anode of described first electric capacity is the output of the described first delay switch control module.
3. the current potential pull-down circuit of the I/O mouth of an integrated circuit, it is characterized in that comprising the second delay switch control module, first nmos pass transistor, second nmos pass transistor, the 3rd inverter, the 4th inverter, the 3rd resistance and the 4th resistance, first end of described the 3rd resistance is the input of described current potential pull-down circuit, second end of described the 3rd resistance is connected with the input of described the 3rd inverter and first end of described the 4th resistance respectively, second end of described the 4th resistance is connected with the drain electrode of described first nmos pass transistor and the drain electrode of described second nmos pass transistor respectively, the grid of described first nmos pass transistor is connected with the described second delay switch control module, the source electrode of described first nmos pass transistor, the substrate of described first nmos pass transistor, the equal ground connection of the substrate of the source electrode of described second nmos pass transistor and described second nmos pass transistor, the grid of described second nmos pass transistor is connected with the output of described the 3rd inverter and the input of described the 4th inverter respectively, and the output of described the 4th inverter is the output of described current potential pull-down circuit.
4. the current potential pull-down circuit of the I/O mouth of a kind of integrated circuit according to claim 3, it is characterized in that the described second delay switch control module mainly is made up of the 6th resistance and second electric capacity, the first end ground connection of described the 6th resistance, second end of described the 6th resistance is connected with the negative terminal of described second electric capacity, the positive termination power of described second electric capacity, the public connecting end of second end of described the 6th resistance and the negative terminal of described second electric capacity is the output of the described second delay switch control module.
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| CN2010101439022A CN101795132B (en) | 2010-04-02 | 2010-04-02 | Potential pull-up circuit and pull-down circuit of I/O port of integrated circuit |
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| CN113965195A (en) * | 2021-12-22 | 2022-01-21 | 芯昇科技有限公司 | Universal input/output interface anti-creeping circuit, chip and electronic equipment |
| WO2022156127A1 (en) * | 2021-01-22 | 2022-07-28 | 长鑫存储技术有限公司 | Detector circuit for damage by cracks in die, crack detection method, and memory |
| US11804412B2 (en) | 2021-01-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Circuit for detecting crack damage of a die, method for detecting crack, and memory |
| CN117240273A (en) * | 2023-09-25 | 2023-12-15 | 芯弘微电子(深圳)有限公司 | Time-lapse driving circuit and electronic equipment |
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| WO2022156127A1 (en) * | 2021-01-22 | 2022-07-28 | 长鑫存储技术有限公司 | Detector circuit for damage by cracks in die, crack detection method, and memory |
| US11804412B2 (en) | 2021-01-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Circuit for detecting crack damage of a die, method for detecting crack, and memory |
| CN113707071A (en) * | 2021-08-31 | 2021-11-26 | Tcl华星光电技术有限公司 | Reference voltage generating circuit and display device |
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Effective date of registration: 20161213 Address after: 315809 Beilun City, Ningbo Province, Wan Chai street, Wan Jing Road, No. G, block, floor three, 12-3, 213 Patentee after: Core integrated circuit (Ningbo) Co., Ltd. Address before: Ningbo city science and Technology Park in Zhejiang province 315040 lease Poplar Road No. 7 Lane 578 Patentee before: Daily Silver IMP Microelectronics Co., Ltd. |