CN101755071B - 溅射装置 - Google Patents

溅射装置 Download PDF

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Publication number
CN101755071B
CN101755071B CN200880025385XA CN200880025385A CN101755071B CN 101755071 B CN101755071 B CN 101755071B CN 200880025385X A CN200880025385X A CN 200880025385XA CN 200880025385 A CN200880025385 A CN 200880025385A CN 101755071 B CN101755071 B CN 101755071B
Authority
CN
China
Prior art keywords
sputtering
magnetic field
cylindrical
mentioned
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880025385XA
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English (en)
Chinese (zh)
Other versions
CN101755071A (zh
Inventor
玉垣浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
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Publication date
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Publication of CN101755071A publication Critical patent/CN101755071A/zh
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Publication of CN101755071B publication Critical patent/CN101755071B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN200880025385XA 2007-07-20 2008-05-29 溅射装置 Expired - Fee Related CN101755071B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007189471A JP2009024230A (ja) 2007-07-20 2007-07-20 スパッタリング装置
JP189471/2007 2007-07-20
PCT/JP2008/059880 WO2009013935A1 (ja) 2007-07-20 2008-05-29 スパッタリング装置

Publications (2)

Publication Number Publication Date
CN101755071A CN101755071A (zh) 2010-06-23
CN101755071B true CN101755071B (zh) 2012-03-21

Family

ID=40281195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880025385XA Expired - Fee Related CN101755071B (zh) 2007-07-20 2008-05-29 溅射装置

Country Status (6)

Country Link
US (1) US20100181191A1 (enExample)
JP (1) JP2009024230A (enExample)
KR (1) KR101175843B1 (enExample)
CN (1) CN101755071B (enExample)
DE (1) DE112008001930T5 (enExample)
WO (1) WO2009013935A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240782B2 (ja) * 2009-05-18 2013-07-17 株式会社神戸製鋼所 連続成膜装置
JP5527894B2 (ja) * 2010-09-01 2014-06-25 株式会社アルバック スパッタ装置
KR101273771B1 (ko) * 2010-11-09 2013-06-12 경희대학교 산학협력단 롤투롤 스퍼터링 시스템
CN103392026B (zh) * 2011-02-23 2016-04-06 株式会社神户制钢所 电弧式蒸发源
CN103160792B (zh) * 2011-12-12 2017-02-08 许聪波 镀膜装置
KR101780466B1 (ko) * 2012-03-12 2017-09-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착을 위한 소형의 회전가능한 스퍼터 디바이스들
EP2855729B1 (en) * 2012-05-29 2019-05-08 Applied Materials, Inc. Method for coating a substrate and coater
KR101494223B1 (ko) 2013-01-31 2015-02-17 (주)에스엔텍 원통형 플라즈마 캐소드 장치
KR102150455B1 (ko) * 2013-04-23 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 이를 포함하는 증착장치
KR102150456B1 (ko) * 2013-04-30 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 방법
CN103409725A (zh) * 2013-05-22 2013-11-27 东莞宏威数码机械有限公司 旋转异形靶阴极机构及磁控溅射镀膜装置
EP2811507B1 (en) * 2013-06-07 2020-02-19 Soleras Advanced Coatings bvba Magnetic configuration for a magnetron sputter deposition system
EP2811509A1 (en) * 2013-06-07 2014-12-10 Soleras Advanced Coatings bvba Electronic configuration for magnetron sputter deposition systems
JP6309353B2 (ja) * 2014-06-06 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法
US9928997B2 (en) 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition
US10422032B2 (en) * 2015-03-20 2019-09-24 Shibaura Mechatronics Corporation Film formation apparatus and film-formed workpiece manufacturing method
KR101716848B1 (ko) * 2015-09-18 2017-03-15 이만호 공간형 이온 빔 발생 장치
CN108138304A (zh) * 2015-10-25 2018-06-08 应用材料公司 用于在基板上真空沉积的设备和用于在真空沉积期间掩蔽基板的方法
DE102016101717A1 (de) * 2016-02-01 2017-08-03 Von Ardenne Gmbh Sputteranordnung
WO2017169029A1 (ja) * 2016-03-30 2017-10-05 京浜ラムテック株式会社 スパッタリングカソード、スパッタリング装置および成膜体の製造方法
KR102333039B1 (ko) * 2016-05-02 2021-11-29 어플라이드 머티어리얼스, 인코포레이티드 기판을 코팅하는 방법 및 기판을 코팅하기 위한 코팅 장치
CN106906447A (zh) * 2016-12-27 2017-06-30 王开安 磁控溅射镀膜源及其装置与方法
CN108456867A (zh) * 2018-06-22 2018-08-28 广东腾胜真空技术工程有限公司 配置辅助阳极的低温沉积设备
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
JP7530724B2 (ja) * 2019-03-26 2024-08-08 日東電工株式会社 マグネトロンプラズマ成膜装置
KR20220024783A (ko) * 2019-06-24 2022-03-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 재료를 증착하는 방법
KR20230145481A (ko) * 2021-03-18 2023-10-17 어플라이드 머티어리얼스, 인코포레이티드 기판 상에 재료를 증착하는 방법
CN113403595A (zh) * 2021-06-01 2021-09-17 无锡爱尔华光电科技有限公司 一种旋转镜像靶磁控溅射设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1861835A (zh) * 2005-05-13 2006-11-15 应用薄膜股份有限公司 操作具有靶的溅射阴极的方法
CN1904132A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPH0368113A (ja) 1989-08-07 1991-03-25 Mitsubishi Electric Corp 油入電気機器
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
JPH10509773A (ja) * 1995-04-25 1998-09-22 ザ ビーオーシー グループ インコーポレイテッド 基板上に誘電体層を形成するためのスパッタリング装置及び方法
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
DE10213049A1 (de) * 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
AU2003248835A1 (en) * 2002-07-02 2004-01-23 Academy Precision Materials A Division Of Academy Corporation Rotary target and method for onsite mechanical assembly of rotary target

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1861835A (zh) * 2005-05-13 2006-11-15 应用薄膜股份有限公司 操作具有靶的溅射阴极的方法
CN1904132A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平3-104864A 1991.05.01

Also Published As

Publication number Publication date
KR20100027222A (ko) 2010-03-10
US20100181191A1 (en) 2010-07-22
DE112008001930T5 (de) 2010-07-08
KR101175843B1 (ko) 2012-08-24
JP2009024230A (ja) 2009-02-05
CN101755071A (zh) 2010-06-23
WO2009013935A1 (ja) 2009-01-29

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