WO2009013935A1 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
WO2009013935A1
WO2009013935A1 PCT/JP2008/059880 JP2008059880W WO2009013935A1 WO 2009013935 A1 WO2009013935 A1 WO 2009013935A1 JP 2008059880 W JP2008059880 W JP 2008059880W WO 2009013935 A1 WO2009013935 A1 WO 2009013935A1
Authority
WO
WIPO (PCT)
Prior art keywords
targets
cylindrical
field generating
magnetic field
cylindrical target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059880
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Hiroshi Tamagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to US12/668,914 priority Critical patent/US20100181191A1/en
Priority to KR1020107001058A priority patent/KR101175843B1/ko
Priority to DE112008001930T priority patent/DE112008001930T5/de
Priority to CN200880025385XA priority patent/CN101755071B/zh
Publication of WO2009013935A1 publication Critical patent/WO2009013935A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2008/059880 2007-07-20 2008-05-29 スパッタリング装置 Ceased WO2009013935A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/668,914 US20100181191A1 (en) 2007-07-20 2008-05-29 Sputtering apparatus
KR1020107001058A KR101175843B1 (ko) 2007-07-20 2008-05-29 스퍼터링 장치
DE112008001930T DE112008001930T5 (de) 2007-07-20 2008-05-29 Sputtergerät
CN200880025385XA CN101755071B (zh) 2007-07-20 2008-05-29 溅射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-189471 2007-07-20
JP2007189471A JP2009024230A (ja) 2007-07-20 2007-07-20 スパッタリング装置

Publications (1)

Publication Number Publication Date
WO2009013935A1 true WO2009013935A1 (ja) 2009-01-29

Family

ID=40281195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059880 Ceased WO2009013935A1 (ja) 2007-07-20 2008-05-29 スパッタリング装置

Country Status (6)

Country Link
US (1) US20100181191A1 (enExample)
JP (1) JP2009024230A (enExample)
KR (1) KR101175843B1 (enExample)
CN (1) CN101755071B (enExample)
DE (1) DE112008001930T5 (enExample)
WO (1) WO2009013935A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240782B2 (ja) * 2009-05-18 2013-07-17 株式会社神戸製鋼所 連続成膜装置
JP5527894B2 (ja) * 2010-09-01 2014-06-25 株式会社アルバック スパッタ装置
KR101273771B1 (ko) * 2010-11-09 2013-06-12 경희대학교 산학협력단 롤투롤 스퍼터링 시스템
KR20130121955A (ko) * 2011-02-23 2013-11-06 가부시키가이샤 고베 세이코쇼 아크식 증발원
CN103160792B (zh) * 2011-12-12 2017-02-08 许聪波 镀膜装置
KR101780466B1 (ko) * 2012-03-12 2017-09-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착을 위한 소형의 회전가능한 스퍼터 디바이스들
WO2013178252A1 (en) * 2012-05-29 2013-12-05 Applied Materials, Inc. Method for coating a substrate and coater
KR101494223B1 (ko) 2013-01-31 2015-02-17 (주)에스엔텍 원통형 플라즈마 캐소드 장치
KR102150455B1 (ko) * 2013-04-23 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 이를 포함하는 증착장치
KR102150456B1 (ko) * 2013-04-30 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 방법
CN103409725A (zh) * 2013-05-22 2013-11-27 东莞宏威数码机械有限公司 旋转异形靶阴极机构及磁控溅射镀膜装置
EP2811507B1 (en) * 2013-06-07 2020-02-19 Soleras Advanced Coatings bvba Magnetic configuration for a magnetron sputter deposition system
EP2811509A1 (en) * 2013-06-07 2014-12-10 Soleras Advanced Coatings bvba Electronic configuration for magnetron sputter deposition systems
JP6309353B2 (ja) * 2014-06-06 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法
US9928997B2 (en) 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition
KR102599567B1 (ko) * 2015-03-20 2023-11-06 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 성막 워크 제조 방법
KR101716848B1 (ko) * 2015-09-18 2017-03-15 이만호 공간형 이온 빔 발생 장치
JP2018532890A (ja) * 2015-10-25 2018-11-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上での真空堆積のための装置及び真空堆積中に基板をマスキングするための方法
DE102016101717A1 (de) * 2016-02-01 2017-08-03 Von Ardenne Gmbh Sputteranordnung
KR20180121798A (ko) * 2016-03-30 2018-11-08 케이힌 람테크 가부시키가이샤 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법
KR102333039B1 (ko) * 2016-05-02 2021-11-29 어플라이드 머티어리얼스, 인코포레이티드 기판을 코팅하는 방법 및 기판을 코팅하기 위한 코팅 장치
CN106906447A (zh) * 2016-12-27 2017-06-30 王开安 磁控溅射镀膜源及其装置与方法
CN108456867A (zh) * 2018-06-22 2018-08-28 广东腾胜真空技术工程有限公司 配置辅助阳极的低温沉积设备
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
JP7530724B2 (ja) * 2019-03-26 2024-08-08 日東電工株式会社 マグネトロンプラズマ成膜装置
WO2020259795A1 (en) * 2019-06-24 2020-12-30 Applied Materials, Inc. Method of depositing a material on a substrate
WO2022194377A1 (en) * 2021-03-18 2022-09-22 Applied Materials, Inc. Method of depositing material on a substrate
CN113403595A (zh) * 2021-06-01 2021-09-17 无锡爱尔华光电科技有限公司 一种旋转镜像靶磁控溅射设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
JP2006316340A (ja) * 2005-05-13 2006-11-24 Applied Materials Gmbh & Co Kg ターゲットを含むスパッタ・カソードの操作方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPH0368113A (ja) 1989-08-07 1991-03-25 Mitsubishi Electric Corp 油入電気機器
CA2218279A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
US20040074770A1 (en) * 2002-07-02 2004-04-22 George Wityak Rotary target

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
JP2006316340A (ja) * 2005-05-13 2006-11-24 Applied Materials Gmbh & Co Kg ターゲットを含むスパッタ・カソードの操作方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Also Published As

Publication number Publication date
DE112008001930T5 (de) 2010-07-08
US20100181191A1 (en) 2010-07-22
KR20100027222A (ko) 2010-03-10
KR101175843B1 (ko) 2012-08-24
CN101755071A (zh) 2010-06-23
JP2009024230A (ja) 2009-02-05
CN101755071B (zh) 2012-03-21

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