CN101752484B - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

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Publication number
CN101752484B
CN101752484B CN2008103064194A CN200810306419A CN101752484B CN 101752484 B CN101752484 B CN 101752484B CN 2008103064194 A CN2008103064194 A CN 2008103064194A CN 200810306419 A CN200810306419 A CN 200810306419A CN 101752484 B CN101752484 B CN 101752484B
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China
Prior art keywords
emitting diode
pin
light
lead
chip
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Expired - Fee Related
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CN2008103064194A
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CN101752484A (zh
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古金龙
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Priority to CN2008103064194A priority Critical patent/CN101752484B/zh
Priority to US12/417,656 priority patent/US7989838B2/en
Publication of CN101752484A publication Critical patent/CN101752484A/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02—Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
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Abstract

一种发光二极管，其包括一发光二极管芯片、一引脚、一导线及一封罩，该导线电性连接芯片至引脚，该导线为螺旋状。本发明的发光二极管可有效地抵御电流冲击，从而确保发光二极管正常工作。

Description

发光二极管及其制造方法
技术领域
本发明涉及一种发光二极管及其制造方法，特别是指一种可抵御电流冲击的发光二极管及其制造方法。
背景技术
作为一种新型的光源，发光二极管凭借其节能、环保、高效等特点，已被应用到越来越多的领域当中，大有取代传统光源的趋势。
发光二极管芯片是发光二极管内最为重要的元件，它决定了发光二极管的发光亮度及出光颜色。芯片通常通过弧形的金线粘接至对应的引脚上，以通过引脚与外界电路导通。当需要启动发光二极管时，只需接通外部电路，即可激发芯片发光。
但是，在外部电路接通的瞬间，由于电流从零急剧变化到预定的数值，致使电路中产生瞬时的电流脉冲。这种电流脉冲如不经过调整而直接输入进发光二极管，将极其容易对芯片造成损坏，从而影响发光二极管正常工作。
发明内容
有鉴于此，实有必要提供一种可有效抵御电流冲击的发光二极管。
一种发光二极管，其包括一发光二极管芯片、一引脚、一将芯片连接至引脚的导线及一封罩，其中该导线为螺旋状。
一种制造发光二极管的方法，其包括如下步骤：提供一基座，该基座包括一底座、自底座凸伸的凸柱及一结合至底座的引脚；提供一导线，将该导线的一端连接至引脚上；将导线缠绕于凸柱上；将一发光二极管芯片固定于基座上；将导线的另一端连接至芯片上；在基座上成型一密封住芯片及导线的封罩。
与现有技术相比，由于导线被设置成螺旋状，其相当于在芯片与引脚间形成了一个微型的电感。凭借电感“阻交流，通直流”的特性，由于电路接通而产生的瞬时电流脉冲可以被电感所扼制，从而不会对芯片造成太大的损害。另外，当电路接通之后，电流趋于稳定而变成直流，电感将不会对其造成任何的阻碍，从而使其顺利地输入进芯片内，以驱动芯片持续发光。
下面参照附图，结合具体实施例对本发明作进一步的描述。
附图说明
图1是本发明第一实施例的发光二极管的截面图。
图2是本发明第二实施例的发光二极管的截面图。
图3是本发明第三实施例的发光二极管的截面图。
具体实施方式
请参阅图1，示出了本发明第一实施例的发光二极管。该发光二极管包括一基座110、一粘结在基座110上的发光二极管芯片120、将芯片120电性连接至基座110的二导线140及一密封芯片120及导线140的封罩130。
基座110包括一碗状的底座(图未标)及插设于底座内的三金属柱160。该底座由热导性良好且电绝缘的材料制成，如陶瓷。底座的上部形成一碗状的凹部112，以容置芯片120。该凹部112的底部为一平坦的表面，以稳定地支撑芯片120。该三金属柱160的顶部均与凹部112的底部齐平，以充分暴露于凹部112内而与导线140及芯片120结合。位于左右两侧的二金属柱160作用相当于连通发光二极管芯片120与外部电路(图未示)间的引脚，其顶面用于供导线140黏接，以在发光二极管内部形成一导电通路；其底面用于与电路板(图未示)上的导电轨迹相接触，以将电流输入进芯片120内。位于中部的金属柱160仅起一热导体的作用，其顶面用于供芯片120贴设，以将芯片120所产生的热量传导至发光二极管外部。该中部的金属柱160与两侧的二金属柱160通过底座隔开，以避免电性导通。该中部的金属柱160的直径大于两侧的金属柱160的直径，以最大限度地对芯片120进行散热。另外，应当指出，该中部的金属柱160并非发光二极管中的必备元件，当芯片120的功率较小以至于发热量有限时，中部的金属柱160完全可省去以节约成本。
芯片120通过银胶170黏接至中部金属柱160的顶面，其顶部的左右两侧分别形成二错落分布的电极122、124。芯片120的周围涂敷有一层荧光粉150，以对芯片120发出的光线进行修正，使输出至封罩130外部的光线可获得一较为理想的光色。
由于发光二极管内的导线140一般均由金制成，因此亦被业界俗称为“金线”。该二金线140分别将芯片120的二电极122、124连接至两侧的二金属柱160的顶面。每一金线140均被设置为螺旋状，以形成一微型的电感。凭借电感“阻交流，通直流”的特性，该二金线140可有效遏制由于电路的瞬间闭合而产生的电流脉冲，从而对芯片120起到良好的保护作用。此外，在电路闭合之后，由于电流趋于稳定而变成直流，其可不受金线140所阻碍而输入进芯片120内，从而驱动芯片120持续发光。相比于传统的弧线式的金线，由于采用了螺旋式的构造，本发明的发光二极管中的金线140可以更加有效地抵御封罩130的挤压而不至于断裂，以确保发光二极管的正常运作。
封罩130通过透明的环氧树脂射入成型而与基座110固结成一体，其填满整个凹部112并向上凸伸出一弧状的部分，从而在基座110上形成一凸透镜。由此，封罩130不仅可以起到密封芯片120及金线140的作用，还可同时对芯片120的光线进行调整，以获得良好的出光效果。
上述发光二极管中的金线140在成型封罩130之前是悬置于芯片120及金属柱160之间，可以理解地，为使金线140的螺旋状结构在成型封罩130时不致被射入的环氧树脂所扰动而变形，可将金线140预先缠绕在特定的结构上。如图2所示，示出了本发明第二实施例的发光二极管，其与第一实施例的区别在于二金线140缠绕于自底座向上一体凸伸出的二凸柱180a上。每一凸柱180a均位于二相应的金属柱160之间，以避免挡住这些金属柱160的顶面。
同时，本发明还提供一种制造该发光二极管的方法，其包括如下步骤：
提供一基座110，该基座具有一底座及插设于底座内的三金属柱160及自底座向上凸伸出的二凸柱180a；
提供二金线140，将每一金线140的一端黏接至位于两侧的对应的一金属柱160上；
将金线140缠绕于二凸柱160上；
将一芯片120黏接于位于中部的金属柱160上；
将每一金线140的另一端固定于芯片120上；
在基座110上射入透明的环氧树脂以形成封罩130。
此外，可以理解地，为使金线140能够产生更好的电感效应，可将与底座一体形成的凸柱180a替换成二铁柱160b。如图3所示，示出了本发明的第三实施例，其与第二实施例的区别在于两侧的二金属柱160b向上凸伸出底座，此时第二实施例中的二凸柱180a相当于二金属柱160b的上半部分。该二金属柱160b采用铁所制成，以增加金线的感应系数。另外，与前二实施例金线140末端固定于金属柱160顶部不同，该实施例中由于金属柱160b与凸柱180a已成为一体，二金线140的末端因此只能分别固定于二金属柱160b的周面上。
此外，该种发光二极管亦可通过上述方法制造，其过程基本类似。
上述芯片120由于其二电极均分布在芯片顶部，因此被业界称为“横向结构型芯片”(Lateral-structured LED chip)。该芯片120仅是当前众多芯片中较为普遍的一种，另外还有多种不同结构形态的芯片，如“垂直结构型芯片”(Vertical-structured LED chip)(图未示)。该种垂直结构型芯片的二电极分别位于顶部及底部，由于其底部的电极可直接与基座110的中部的金属柱160直接电性接触，因此仅需要一根金线140将顶部的电极连接至对应的两侧的二金属柱160、160b中的一个即可实现发光二极管内部的电性导通，此时另一金属柱160、160b可省去以节约成本。

Claims (14)

1.一种发光二极管，其包括一发光二极管芯片、一引脚、一导线及一封罩，该导线电性连接芯片至引脚，其特征在于：该导线为螺旋状。
2.如权利要求1所述的发光二极管，其还包括另一引脚及将该另一引脚与芯片电性连接的螺旋状的另一导线。
3.如权利要求2所述的发光二极管，其还包括一承载芯片的底座，其特征在于：该引脚及另一引脚结合至底座。
4.如权利要求3所述的发光二极管，其特征在于：二凸柱形成于底座上，该导线及另一导线分别缠绕于该二凸柱上。
5.如权利要求4所述的发光二极管，其特征在于：该二凸柱与底座一体成型，该二凸柱通过底座与引脚及另一引脚隔开。
6.如权利要求4所述的发光二极管，其特征在于：该引脚及另一引脚凸伸出底座，该二凸柱分别是引脚及另一引脚的一部分。
7.如权利要求6所述的发光二极管，其特征在于：该导线的一端固定至凸柱的周面上。
8.如权利要求3至7任一项所述的发光二极管，其特征在于：一金属柱设置于底座内，该金属柱位于引脚及另一引脚之间且与芯片热导性接触。
9.如权利要求2至7任一项所述的发光二极管，其特征在于：该引脚及另一引脚由铁制成。
10.一种制造发光二极管的方法，其包括如下步骤：
提供一基座，该基座包括一底座、自底座凸伸的凸柱及一结合至底座的引脚；
提供一导线，将该导线的一端连接至引脚上；
将导线缠绕于凸柱上，使导线为螺旋状；
将一发光二极管芯片固定于基座上；
将导线的另一端连接至芯片上；
在基座上成型一密封住芯片及导线的封罩。
11.如权利要求10所述的制造发光二极管的方法，其特征在于：该凸柱与底座一体成型且与引脚通过底座隔开。
12.如权利要求10所述的制造发光二极管的方法，其特征在于：该引脚凸伸出底座，该凸柱是引脚的一部分。
13.如权利要求12所述的制造发光二极管的方法，其特征在于：该导线的一端固定至引脚的周面。
14.如权利要求10至13任一项所述的制造发光二极管的方法，其特征在于：该引脚由铁制成。
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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101771025A (zh) * 2008-12-26 2010-07-07 富准精密工业(深圳)有限公司 发光二极管
KR101034054B1 (ko) * 2009-10-22 2011-05-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
DE102011114880A1 (de) * 2010-10-15 2012-04-19 Ceramtec Gmbh LED-Treiberschaltung
DE102011114882A1 (de) * 2010-10-15 2012-04-19 Ceramtec Gmbh LED-Leuchte mit integriertem Treiber
CN102456803A (zh) * 2010-10-20 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构
US10267506B2 (en) 2010-11-22 2019-04-23 Cree, Inc. Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same
DE102010061801A1 (de) * 2010-11-23 2012-05-24 Tridonic Jennersdorf Gmbh LED-Modul mit gemeinsamem Farbumwandlungsmodul für wenigstens zwei LED-Chips
WO2012109225A1 (en) * 2011-02-07 2012-08-16 Cree, Inc. Components and methods for light emitting diode (led) lighting
US8835945B2 (en) * 2013-01-11 2014-09-16 Lighting Science Group Corporation Serially-connected light emitting diodes, methods of forming same, and luminaires containing same
US9360202B2 (en) 2011-05-13 2016-06-07 Lighting Science Group Corporation System for actively cooling an LED filament and associated methods
US8952395B2 (en) * 2011-07-26 2015-02-10 Micron Technology, Inc. Wafer-level solid state transducer packaging transducers including separators and associated systems and methods
US8497146B2 (en) 2011-08-25 2013-07-30 Micron Technology, Inc. Vertical solid-state transducers having backside terminals and associated systems and methods
US8779694B1 (en) 2011-12-08 2014-07-15 Automated Assembly Corporation LEDs on flexible substrate arrangement
TWI453923B (zh) * 2012-06-22 2014-09-21 Txc Corp Light sensing chip package structure
JP5891133B2 (ja) * 2012-07-12 2016-03-22 スタンレー電気株式会社 半導体発光装置
US9810381B2 (en) * 2012-12-03 2017-11-07 Citizen Watch Co., Ltd. LED module
US20140374151A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Wire bonding method for flexible substrates
PL3065174T3 (pl) * 2013-12-02 2019-09-30 Tiehan Ge Spiralny żarnik led i żarówka wykorzystująca spiralny żarnik led
US9717148B2 (en) * 2015-09-18 2017-07-25 Quartzdyne, Inc. Methods of forming a microelectronic device structure, and related microelectronic device structures and microelectronic devices
US10317614B1 (en) 2017-03-14 2019-06-11 Automatad Assembly Corporation SSL lighting apparatus
JP6827353B2 (ja) * 2017-03-29 2021-02-10 エイブリック株式会社 半導体装置および電子装置
CN107833876B (zh) * 2017-11-24 2024-03-15 广东晶科电子股份有限公司 一种色温可调的led光源及其制造方法
CN110010563B (zh) * 2018-10-10 2021-01-15 浙江集迈科微电子有限公司 一种底部散热型射频芯片转接板封装工艺
US10655823B1 (en) 2019-02-04 2020-05-19 Automated Assembly Corporation SSL lighting apparatus
KR20210015407A (ko) * 2019-08-02 2021-02-10 현대자동차주식회사 회전 광원이 있는 자동차 램프
US10995931B1 (en) 2020-08-06 2021-05-04 Automated Assembly Corporation SSL lighting apparatus
CN113937613A (zh) * 2021-09-22 2022-01-14 中国电子科技集团公司第十一研究所 一种星载泵浦ld强化组件及激光器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793096A (en) * 1996-12-21 1998-08-11 Electronics And Telecommunications Research Institute MOS transistor embedded inductor device using multi-layer metallization technology
JP2001057443A (ja) * 1999-08-19 2001-02-27 Rohm Co Ltd 発光ダイオ−ドランプ
EP1439585A1 (en) * 2003-01-17 2004-07-21 Unity Opto Technology Co., Ltd. Light emitting diode comprising a phosphor layer
US6995577B2 (en) * 1999-03-25 2006-02-07 Micron Technology, Inc. Contact for semiconductor components
JP2008182263A (ja) * 2008-03-14 2008-08-07 Kyocera Corp 発光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471010A (en) * 1993-08-31 1995-11-28 Motorola, Inc. Spatially separated uninsulated twisted wire pair
WO2001059851A1 (en) * 2000-02-09 2001-08-16 Nippon Leiz Corporation Light source
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793096A (en) * 1996-12-21 1998-08-11 Electronics And Telecommunications Research Institute MOS transistor embedded inductor device using multi-layer metallization technology
US6995577B2 (en) * 1999-03-25 2006-02-07 Micron Technology, Inc. Contact for semiconductor components
JP2001057443A (ja) * 1999-08-19 2001-02-27 Rohm Co Ltd 発光ダイオ−ドランプ
EP1439585A1 (en) * 2003-01-17 2004-07-21 Unity Opto Technology Co., Ltd. Light emitting diode comprising a phosphor layer
JP2008182263A (ja) * 2008-03-14 2008-08-07 Kyocera Corp 発光装置

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