CN101717991A - 改进的直拉硅单晶炉 - Google Patents
改进的直拉硅单晶炉 Download PDFInfo
- Publication number
- CN101717991A CN101717991A CN200910175318A CN200910175318A CN101717991A CN 101717991 A CN101717991 A CN 101717991A CN 200910175318 A CN200910175318 A CN 200910175318A CN 200910175318 A CN200910175318 A CN 200910175318A CN 101717991 A CN101717991 A CN 101717991A
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- storage
- furnace wall
- furnace
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- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 239000010439 graphite Substances 0.000 claims abstract description 17
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010453 quartz Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000003860 storage Methods 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 27
- 238000009413 insulation Methods 0.000 claims description 8
- 238000013022 venting Methods 0.000 claims description 5
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 240000003936 Plumbago auriculata Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101753182A CN101717991B (zh) | 2009-12-14 | 2009-12-14 | 改进的直拉硅单晶炉 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101753182A CN101717991B (zh) | 2009-12-14 | 2009-12-14 | 改进的直拉硅单晶炉 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101717991A true CN101717991A (zh) | 2010-06-02 |
| CN101717991B CN101717991B (zh) | 2012-02-29 |
Family
ID=42432627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101753182A Active CN101717991B (zh) | 2009-12-14 | 2009-12-14 | 改进的直拉硅单晶炉 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101717991B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011176A (zh) * | 2010-11-30 | 2011-04-13 | 江苏华盛天龙光电设备股份有限公司 | 一种带气体冷阱的硅单晶生长炉 |
| CN108330531A (zh) * | 2018-03-23 | 2018-07-27 | 廊坊赫尔劳斯太阳能光伏有限公司 | 用高频波进行硅单晶生长过程控制的硅单晶炉 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100415944C (zh) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | 一种清除直拉硅单晶炉内SiO的方法及装置 |
| CN101319351B (zh) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | 单晶炉 |
| CN101545134B (zh) * | 2009-03-31 | 2011-05-04 | 常州天合光能有限公司 | 利用含杂质硅材料制备高纯度单晶硅棒的方法及其装置 |
-
2009
- 2009-12-14 CN CN2009101753182A patent/CN101717991B/zh active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011176A (zh) * | 2010-11-30 | 2011-04-13 | 江苏华盛天龙光电设备股份有限公司 | 一种带气体冷阱的硅单晶生长炉 |
| CN108330531A (zh) * | 2018-03-23 | 2018-07-27 | 廊坊赫尔劳斯太阳能光伏有限公司 | 用高频波进行硅单晶生长过程控制的硅单晶炉 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101717991B (zh) | 2012-02-29 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: NINGJIN JINGXING ELECTRONIC MATERIAL Co.,Ltd. Assignor: Ningjin Jingfeng Electronic Material Co.,Ltd.|Jinglong Industry and Commerce Group Co.,Ltd. Contract record no.: 2012130000041 Denomination of invention: Improved czochralski silicon monocrystalline furnace Granted publication date: 20120229 License type: Exclusive License Open date: 20100602 Record date: 20120320 |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 055550 Ningjin County high and new technology development zone in Hebei Province Co-patentee after: NINGJIN JINGXING ELECTRONIC MATERIAL Co.,Ltd. Patentee after: Jinglong Industry and Commerce Group Co.,Ltd. Address before: 055550 Ningjin County high and new technology development zone in Hebei Province Co-patentee before: Ningjin Jingfeng Electronic Material Co.,Ltd. Patentee before: Jinglong Industry and Commerce Group Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180801 Address after: 055550 267 Jing Long Street, Ningjin County, Xingtai, Hebei. Patentee after: NINGJIN JINGXING ELECTRONIC MATERIAL Co.,Ltd. Address before: 055550 Ningjin County high and new technology development zone in Hebei Province Co-patentee before: NINGJIN JINGXING ELECTRONIC MATERIAL Co.,Ltd. Patentee before: Jinglong Industry and Commerce Group Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190523 Address after: 014030 No. 21 Equipment Avenue, New Planning Area, Qingshan District Equipment Park, Baotou City, Inner Mongolia Autonomous Region Patentee after: BAOTOU JINGAO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 055550 267 Jing Long Street, Ningjin County, Xingtai, Hebei. Patentee before: NINGJIN JINGXING ELECTRONIC MATERIAL Co.,Ltd. |