CN101681845A - 粘接膜及使用该粘接膜的半导体装置 - Google Patents

粘接膜及使用该粘接膜的半导体装置 Download PDF

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Publication number
CN101681845A
CN101681845A CN200780053460A CN200780053460A CN101681845A CN 101681845 A CN101681845 A CN 101681845A CN 200780053460 A CN200780053460 A CN 200780053460A CN 200780053460 A CN200780053460 A CN 200780053460A CN 101681845 A CN101681845 A CN 101681845A
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China
Prior art keywords
bonding film
semiconductor element
aforementioned
resin
bonding
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CN200780053460A
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吉田将人
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Publication of CN101681845A publication Critical patent/CN101681845A/zh
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    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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Abstract

本发明的粘接膜，用于将半导体元件和基板或者半导体元件和半导体元件进行接合，其特征在于，前述粘接膜由包含环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)为0.5～4。另外，本发明的半导体装置的特征在于，使用上述记载的粘接膜接合半导体元件和基板或者半导体元件和半导体元件。

Description

粘接膜及使用该粘接膜的半导体装置
技术领域
本发明涉及粘接膜及使用该粘接膜的半导体装置。
背景技术
随着近年来的电子设备的小型化、薄型化，发展成了使用在基板上高密度安装半导体元件的半导体封装。通常，该种半导体封装的生产要经过：用粘接膜接合半导体元件和基板的接合工序；用键合引线将半导体元件和基板电导通的引线键合工序；以及用密封树脂密封半导体元件的密封工序(例如，参照专利文献1：日本特开2003-60127号公报)。
此处，所使用的粘接膜被要求具有接合半导体元件和基板的功能，以及填埋基板的凹凸的功能等。就以往的粘接膜而言，粘接膜通过密封密封树脂的密封工序中的加热和压力软化，从而填埋基板的凹凸。
但是近年来，发展成使用将半导体元件多级层叠高密度安装于基板的半导体封装，为了多级层叠半导体元件，前述引线键合工序的时间就变长。因此，有时粘接膜过于固化而在前述密封工序中不充分软化，不能填埋基板的凹凸。
发明内容
本发明的目的在于提供一种粘接膜及使用该粘接膜的半导体装置，其中，通过前述接合工序中的加热使得粘接膜软化，提高对基板的凹凸的填埋性(初期填埋性)。
为了实现上述目的，下述(1)～(16)记载的本发明为，
(1)一种粘接膜，其为用于将半导体元件和基板或者将半导体元件和半导体元件进行接合的粘接膜，其特征在于，前述粘接膜由含有环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)为0.5～4。
(2)根据上述(1)所记载的粘接膜，其中，前述丙烯酸系低聚物的玻璃化转变温度为-30℃以下。
(3)根据上述(1)或(2)所记载的粘接膜，其中，前述丙烯酸系低聚物的含量是前述树脂组合物总量的5～30重量％。
(4)根据上述(1)～(3)中任一项所记载的粘接膜，其中，前述丙烯酸系低聚物具有羧基和缩水甘油基中的至少一种基团。
(5)根据上述(1)～(4)中任一项所记载的粘接膜，其中，前述丙烯酸系低聚物在常温下为液态。
(6)根据上述(1)～(5)中任一项所记载的粘接膜，其中，前述树脂组合物包含固化剂。
(7)根据上述(6)所记载的粘接膜，其中，前述固化剂包含液态酚化合物。
(8)根据上述(1)～(7)中任一项所记载的粘接膜，其中，前述树脂组合物进一步包含固化催化剂。
(9)根据上述(8)所记载的粘接膜，其中，前述固化催化剂包含咪唑化合物。
(10)根据上述(8)或(9)所记载的粘接膜，其中，前述固化催化剂的熔点是150℃以上。
(11)根据上述(1)～(10)中任一项所记载的粘接膜，其中，前述粘接膜在100℃下的熔融粘度是80Pa·s以下。
(12)根据上述(1)～(11)中任一项所记载的粘接膜，其中，所述粘接膜在175℃下热处理2小时后的固化物的175℃下的弹性模量是30MPa以上。
(13)一种粘接膜，其用作半导体装置的粘接层，所述半导体装置是在基板的一个面侧依次层叠第一半导体元件、粘接层和第二半导体元件，在前述第一半导体元件的功能面上形成的端子和基板通过键合引线电连接，前述键合引线的前述端子附近的部位在前述粘接层内通过来形成，其特征在于，前述粘接膜由含有环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)为0.5～4。
(14)根据上述(13)所记载的粘接膜，其中，前述第二半导体元件的俯视角度的面积与前述第一半导体元件的俯视角度的面积大致相同。
(15)根据上述(13)所记载的粘接膜，其中，前述第二半导体元件的俯视角度的面积比前述第一半导体元件的俯视角度的面积大。
(16)一种半导体装置，其特征在于，使用上述(1)～(15)中的任一项所记载的粘接膜接合半导体元件和基板或者半导体元件和半导体元件。
附图说明
图1是示意地表示粘接膜的粘接状态的示意图；
图2是制造半导体装置的一个方法的流程图；
图3是示意地表示半导体装置的一个例子的示意图；
图4是示意地表示半导体装置的一个例子的示意图。
具体实施方式
下面，对本发明的粘接膜和半导体装置加以详细说明。
本发明的粘接膜是用于接合半导体元件和基板或者半导体元件和半导体元件的粘接膜，其特征在于，前述粘接膜由含有环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)为0.5～4。
另外，本发明的半导体装置的特征在于，使用上述记载的粘接膜接合半导体元件和基板或者半导体元件和半导体元件。
首先，对粘接膜加以说明。
如图1所示，粘接膜1用于半导体元件2和基板3的连接(a)或者半导体元件2和半导体元件2的连接(b)。
粘接膜1由含有环氧树脂、丙烯酸系树脂和重均分子量为6000以下的丙烯酸系低聚物的树脂组合物构成。由此，基板凹凸的填埋性和耐热性·密接性达到优良的平衡。
前述树脂组合物包含环氧树脂。由此，能够对粘接膜1赋予耐热性和粘接性。
作为前述环氧树脂，例如，可举出双酚A型环氧树脂、双酚F型环氧树脂等双酚型环氧树脂；酚醛清漆环氧树脂、甲酚酚醛清漆环氧树脂等酚醛清漆型环氧树脂；联苯型环氧树脂、芪型环氧树脂、三苯酚甲烷型环氧树脂、烷基改性三苯酚甲烷型环氧树脂、含三嗪核的环氧树脂、二环戊二烯改性苯酚型环氧树脂等，这些可以单独使用也可以混合后使用。其中，优选酚醛清漆型环氧树脂。由此，能够更加提高耐热性和密接性。
前述环氧树脂的含量并无特别限制，但优选为前述树脂组合物总量的30～60重量％，特别优选为40～50重量％。当含量小于前述下限值时，前述接合工序中对基板凹凸的填埋性有时降低，当超过前述上限值时，提高膜形成能力的效果有时降低。
前述树脂组合物包含丙烯酸系树脂。由此，能够提高粘接膜1的膜形成能力。
前述丙烯酸系树脂是指丙烯酸及其衍生物，具体来说，可举出丙烯酸；甲基丙烯酸；丙烯酸甲酯、丙烯酸乙酯等丙烯酸酯；甲基丙烯酸甲酯、甲基丙烯酸乙酯等甲基丙烯酸酯；丙烯腈、丙烯酰胺等的聚合物以及与其他单体的共聚物等。
另外，在前述丙烯酸系树脂中，优选为含有具有环氧基、羟基、羧基、腈基等的化合物(共聚单体成分)的丙烯酸系树脂(尤其是丙烯酸酯共聚物)。由此，能够更加提高对半导体元件等被粘体的密接性。作为具有前述官能团的化合物，具体来说，可举出具有缩水甘油醚基的缩水甘油基甲基丙烯酸酯、具有羟基的羟基甲基丙烯酸酯、具有羧基的羧基甲基丙烯酸酯、具有腈基的丙烯腈等。
前述丙烯酸系树脂的重均分子量并无特别限制，但优选为10万以上，特别优选为15万～100万。当重均分子量处于前述范围内时，尤其能够提高膜形成能力。此外，当重均分子量处于前述范围内时，在前述丙烯酸系树脂中包含热固性的官能团的情况下也不会因热处理而表现出有树脂独自固化的迹象。
前述重均分子量，例如，可以通过凝胶渗透色谱(GPC)来测定，作为测定条件的例子可举出：采用东曹(株)制造的高速GPC SC-8020装置，色谱柱为TSK-GEL GMHEXL-L，温度为40℃，溶剂为四氢呋喃等。
前述丙烯酸系树脂的含量并无特别限制，但优选为前述树脂组合物总量的5～30重量％，特别优选为8～20重量％。当含量小于前述下限值时，提高膜形成能力的效果有时降低，当超过前述上限值时，提高前述接合工序中对基板凹凸的填埋性的效果有时降低。
前述树脂组合物包含丙烯酸系低聚物。
作为前述丙烯酸系低聚物，例如，可举出丙烯酸；甲基丙烯酸；丙烯酸甲酯、丙烯酸乙酯等丙烯酸酯；甲基丙烯酸甲酯、甲基丙烯酸乙酯等甲基丙烯酸酯；丙烯腈；丙烯酰胺等的聚合物低聚物以及与其他单体的共聚物低聚物等。
另外，在前述丙烯酸系低聚物之中，优选为含有具有环氧基、羟基、羧基、腈基等的化合物(共聚单体成分)的丙烯酸系低聚物，特别优选为具有羧基和缩水甘油基中至少一种基团的丙烯酸系低聚物。由此，能够更加提高对半导体元件等被粘体的密接性。作为具有前述官能团的化合物，具体来说，可以举出具有缩水甘油醚基的缩水甘油基甲基丙烯酸酯、具有羟基的羟基甲基丙烯酸酯、具有羧基的羧基甲基丙烯酸酯、具有腈基的丙烯腈等。
另外，这些丙烯酸系低聚物在常温下可以是液态也可以是固态。
前述丙烯酸系低聚物的重均分子量是6000以下。由此，能够提高粘接膜1的初期填埋性。
进一步，具体来说，前述丙烯酸系低聚物的重均分子量优选为4500以下，特别优选为1000～3000。当重均分子量小于前述下限值时，提高膜形成能力的效果有时降低，当超过前述上限值时，提高前述接合工序中对基板凹凸的填埋性的效果有时降低。
前述重均分子量，例如，可以通过凝胶渗透色谱(GPC)来测定，作为测定条件的例子可举出：用东曹(株)制造的高速GPC SC-8020装置，色谱柱为TSK-GEL GMHXL-L，温度为40℃，溶剂为四氢呋喃等。
前述丙烯酸系树脂的重均分子量Mw1和前述丙烯酸系低聚物的重均分子量Mw2的比例(Mw1/Mw2)并无特别限制，但优选为20以上，特别优选为60以上。当重均分子量的比例小于前述下限值时，提高膜形成能力的效果有时降低，而且提高耐热性的效果有时降低。
前述丙烯酸系低聚物的玻璃化转变温度并无特别限制，但优选为-30℃以下，特别优选为-50～-35℃。当玻璃化转变温度处于前述范围内时，前述粘接膜的胶粘性变大，与被粘体的初期密接性也优异。
前述玻璃化转变温度，例如可以采用热机械特性分析装置(精工电子有限公司TMA/SS6100)，根据一边从-65℃以5℃/分钟的升温速度使温度升高，一边用规定负载(10mN)进行拉伸时的突变点来测定。
前述丙烯酸系低聚物的含量并无特别限制，但优选为前述树脂组合物总量的5～30重量％，特别优选为10～20重量％。当含量小于前述下限值时，提高膜形成能力的效果有时降低，当超过前述上限值时，提高前述接合工序中对基板凹凸的填埋性的效果有时降低。
就前述树脂组合物而言，其特征在于，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)为0.5～4。由此，在将粘接膜1接合于基板时，初期填埋性特别优良，并且，膜特性也优良。
进而，具体来说，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)优选为0.6～2，特别优选为0.7～1.5。当含量的比例小于前述下限值时，提高膜形成能力的效果有时降低，当超过前述上限值时，提高前述接合工序中对基板凹凸的填埋性的效果有时降低。
前述树脂组合物并无特别限制，但优选含有固化剂。
作为前述固化剂，例如，可举出：包括二乙烯三胺(DETA)、三乙烯四胺(TETA)、间苯二甲胺(MXDA)等脂肪族多胺，二氨基二苯基甲烷(DDM)、间苯二胺(MPDA)、二氨基二苯砜(DDS)等芳香族多胺，双氰胺(DICY)、有机酸二酰肼等的多胺化合物等胺系固化剂；六氢邻苯二甲酸酐(HHPA)、甲基四氢邻苯二甲酸酐(MTHPA)等脂环族酸酐(液态酸酐)，偏苯三酸酐(TMA)、均苯四甲酸二酐(PMDA)、二苯甲酮四羧酸二酐(BTDA)等芳香族酸酐等酸酐系固化剂；酚醛树脂等酚系固化剂。其中，优选为酚系固化剂(尤其是常温下为液态的苯酚化合物)，具体来说，可以举出双(4-羟基-3，5-二甲基苯基)甲烷(俗称“四甲基双酚F”)、4，4’-磺酰基二苯酚、4，4’-异亚丙基二苯酚(俗称“双酚A”)、双(4-羟基苯基)甲烷、双(2-羟基苯基)甲烷、(2-羟基苯基)(4-羟基苯基)甲烷以及它们中的双(4-羟基苯基)甲烷、双(2-羟基苯基)甲烷、(2-羟基苯基)(4-羟基苯基)甲烷这3种的混合物(例如，双酚F-D，本州化学工业(株)制造)等双酚类，邻苯二酚、间苯二酚、对苯二酚等二羟基苯类，1，2，4-苯三酚等三羟基苯类，1，6-二羟基萘等二羟基萘类的各种异构体，2，2’-联苯酚、4，4’-联苯酚等联苯酚类的各种异构体等化合物。
前述固化剂的含量并无特别限制，但优选为前述树脂组合物总量的15～40重量％，特别优选为20～35重量％。当含量小于前述下限值时，提高耐热性的效果有时降低，当超过前述上限值时，有时保存性降低。还有，作为酚系固化剂使用酚醛树脂的情况下，该酚醛树脂不作为热固性树脂来评价其含量。
前述树脂组合物并无特别限制，但优选含有固化催化剂。由此，能够提高前述粘接膜的固化性。
作为前述固化催化剂，例如，可举出咪唑类、1，8-二氮杂双环(5，4，0)十一炔等胺系催化剂、三苯基膦等磷系催化剂等。其中，优选为咪唑。由此，尤其能够兼得快速固化性和保存性。
作为前述咪唑类，例如，可举出1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、2-苯基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2，4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰尿酸加成物、2-苯基咪唑异氰尿酸加成物、2-苯基-4，5-二羟甲基咪唑、2-苯基-4-甲基-5-羟甲基咪唑、2，4-二氨基-6-乙烯基-s-三嗪、2，4-二氨基-6-乙烯基-s-三嗪异氰尿酸加成物、2，4-二氨基-6-甲基丙烯酰氧基乙基-s-三嗪、2，4-二氨基-6-甲基丙烯酰氧基乙基-s-三嗪异氰尿酸加成物等。其中，优选为2-苯基-4，5-二羟甲基咪唑或者2-苯基-4-甲基-5-羟甲基咪唑。由此，尤其能够提高保存性。
前述固化催化剂的熔点并无特别限制，但优选为150℃以上，特别优选为160～230℃。当熔点处于前述范围内时，前述接合工序中对基板凹凸的填埋性和固化性达到优良的平衡。
作为熔点为150℃以上的固化催化剂，例如，可举出2-苯基-4，5-二羟甲基咪唑、2-苯基-4-甲基-5-羟甲基咪唑等。
前述固化催化剂的含量并无特别限制，但相对于前述热固性树脂100重量份，优选为0.01～30重量份，特别优选为0.5～10重量份。当含量小于前述下限值时，有时固化性不足够，当超过前述上限值时，有时保存性降低。
虽无特别限制，但前述树脂组合物并优选含有偶联剂。由此，能够更加提高树脂和被粘体以及树脂界面的密接性。
作为前述偶联剂，可举出硅烷系偶联剂、钛系偶联剂、铝系偶联剂等。其中，优选为硅烷系偶联剂。由此，能够更加提高耐热性。
作为前述硅烷系偶联剂，例如，可以举出乙烯基三氯硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、β-(3，4-环氧基环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基甲基二乙氧基硅烷、γ-甲基丙烯酰氧基丙基三乙氧基硅烷、N-β(氨基乙基)γ-氨基丙基甲基二甲氧基硅烷、N-β(氨基乙基)γ-氨基丙基三甲氧基硅烷、N-β(氨基乙基)γ-氨基丙基三乙氧基硅烷、γ-氨基丙基三甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、N-苯基-γ-氨基丙基三甲氧基硅烷、γ-氯丙基三甲氧基硅烷、γ-巯基丙基三甲氧基硅烷、3-异氰酸酯基丙基三乙氧基硅烷、3-丙烯酰氧基丙基三甲氧基硅烷等。
前述偶联剂的含量并无特别限制，但相对于前述热固性树脂100重量份，优选为0.01～10重量份，特别优选为0.5～8重量份。当含量小于前述下限值时，有时密接性的效果不足够，当超过前述上限值时，有时成为漏气、空隙的原因。
在前述树脂组合物中，除了上述环氧树脂、丙烯酸系树脂、丙烯酸系低聚物、固化剂等之外，还可以配合流平剂、消泡剂等添加剂。
将这种树脂组合物溶解于例如甲基乙基酮、丙酮、甲苯、二甲基甲醛等溶剂中，制成清漆状态后，采用逗点涂布机(コンマコ一タ一)、金属型涂布机、凹版涂布机等涂布在载体膜上，并干燥，可以得到粘接膜1。
粘接膜1的厚度并无特别限制，但优选为3～100μm，特别优选为5～70μm。当厚度处于前述范围内时，能够特别容易地控制厚度精度。
这样操作所得到的粘接膜1在100℃下的熔融粘度并无特别限制，但优选为80Pa·s以下，特别优选为40～75Pa·s。当熔融粘度处于前述范围内时，提高对基板凹凸的填埋性的效果特别优良。
前述熔融粘度，例如，可以使用粘弹性测定装置即流变计，对膜状态的试样在10℃/分钟的升温速度的条件下给予频率1Hz的剪切应力来进行测定。
另外，粘接膜1在175℃下热处理2小时后的弹性模量并无特别限制，但优选为30MPa以上，特别优选为40MPa以上。当弹性模量处于前述范围内时，在密封工序中能够防止由无机填充材料等导致的半导体元件的破裂、缺口等。
前述弹性模量，例如，可以采用动态粘弹性测定装置(DMA)，在升温速度3℃/分钟、频率10Hz的条件下进行测定。
接下来，对半导体装置加以说明。
图2是制造半导体装置的一个方法的流程图。
如图2所示，半导体装置通过如下工序制造：临时接合粘接膜1和半导体元件的临时接合工序；使临时接合的粘接膜1固化至规定的固化度的第一固化工序；将半导体元件和基板电连接的引线键合工序；密封半导体元件和键合引线的密封工序；最终使粘接膜1固化的第二固化工序。
下面，简单说明各工序。
(临时接合工序)
在临时接合工序中，将预先贴附有粘接膜的半导体元件和基板临时接合，得到临时接合体。在该临时接合工序中，进行粘接膜对基板凹凸的填埋(初期填埋)。就临时接合而言，具体来说，将基板、粘接膜、半导体元件依次搭载，并用热压机热压合来进行。此处，粘接膜可以预先接合于半导体元件，也可预先接合于基板。
(第一固化工序)
在第一固化工序中，对临时接合体进行加热处理等，使构成粘接膜的树脂组合物临时固化至规定的固化度。由此，能够提高后述的引线键合工序中的引线粘接力。
具体来说，规定的固化度所指的情况是，完成例如用差示量热仪测定粘接膜所得到的总固化放热量的50～80％的放热的状态。
另外，经过前述第一固化工序后的粘接膜在175℃下的弹性模量并无特别限制，但优选为5.0MPa以上，特别优选为6.0～8.0MPa。由此，能够提高粘接膜的初期填埋性。
(引线键合工序)
在引线键合工序中，将半导体元件的电极和基板的电极用键合引线电连接。该键合引线的连接例如可使用EAGLE60(ASM制造)等来进行。
此处，引线键合工序通常在150～250℃的温度下进行。因此，初期填埋性优良的粘接膜的情况下，粘接膜的弹性模量往往较低，粘接膜成为垫层，降低引线键合强度，有时会成为不良的原因。因此，优选通过前述第一固化工序，使粘接膜的固化度提高一定程度。
此处，进行引线键合的温度(例如175℃)下的粘接膜的弹性模量并无特别限制，但优选为5MPa以上，特别优选为6.0～8.0MPa。由此，能够提高粘接膜的初期填埋性。
(密封工序)
在密封工序中，用密封树脂进行密封，以覆盖半导体元件以及将半导体元件的电极和基板的电极接合的键合引线。由此，能够保护半导体元件，提高绝缘性和防湿性。密封条件例如采用传递成型机，在150～200℃、50～100kg/mm2的高温、高压下进行。
就以往的粘接剂而言，在密封工序中密封树脂所含有的填充材料有时混入到半导体元件和基板之间(或者层叠多个半导体元件时，在半导体元件间)的粘接剂中，使半导体元件产生裂纹或缺口等不良现象。
针对该原因进行研究的结果，本发明人等发现，在密封工序(密封温度)中因为粘接剂(在本实施方式中，相当于粘接膜)软化，并且施加压力而使得填充材料容易混入。因此，本发明优选使接合半导体元件和基板或半导体元件和半导体元件的粘接剂在密封温度下的弹性模量调整为6MPa以上。由此，在进行密封的温度下，粘接剂也具有一定程度的硬度，因此能够防止填充材料混入。
具体来说，在密封温度下的弹性模量特别优选为12MPa以上，优选为8～50MPa。该弹性模量例如可以采用动态粘弹性测定装置(DMA)进行测定。
前述弹性模量，例如采用精工电子有限公司制造的动态粘弹性测定装置，在升温速度3℃/分钟、频率10Hz的条件下测定动态粘弹性，测定储能弹性模量。
(第二固化工序)
在第二固化工序中，在固化密封树脂的同时，将粘接膜真正固化至前述固化度以上。由此，能够得到最终的半导体装置。
就第二固化条件而言，只要是密封树脂固化，并且促进粘接膜的固化的条件即可，并无特别限制，例如，优选为100～160℃×5～180分钟，特别优选为120～130℃×10～100分钟。
经过这种工序，最终，能够得到图3所示的半导体装置10。半导体装置10中，半导体元件2和基板3通过粘接膜1接合。半导体元件2和基板3通过键合引线4电连接。半导体元件2和键合引线4被密封树脂5覆盖(密封)。
在本发明中得到的半导体装置10并不限于此，例如，也可以不设置第一固化工序来制造半导体装置10。
本发明的半导体装置10，由于采用对基板3凹凸的填埋性优良的粘接膜1，因此连接可靠性特别优良。
另外，本发明的粘接膜，也适合应用于图4所示的半导体元件被多级层叠，并且下侧的半导体元件21的俯视角度的面积与上侧的半导体元件22的俯视角度的面积大致相同的情况下，或者下侧的半导体元件21的俯视角度的面积比上侧的半导体元件22的俯视角度的面积小的情况。
图4的半导体装置表示的是下侧的半导体元件21的俯视角度的面积与上侧的半导体元件22的俯视角度的面积大致相同的情况。如图4所示，半导体装置10中，在基板3的一个面侧(图4中的上侧)，依次层叠有粘接膜1a、第一半导体元件21、粘接膜1b和第二半导体元件。在第一半导体元件21的功能面(图4中的上侧面)上形成的端子6和基板3通过键合引线4进行电连接。此时，键合引线4的端子6附近的部位41在粘接膜1b内通过。这种粘接膜1b由包含前述的环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，前述丙烯酸系树脂的含量Wa和前述丙烯酸系低聚物的含量Wb之比(Wa/Wb)是0.5～4。
另外，对于膜1a来说，可以是与膜1b相同的膜，也可以使用不同的膜。
粘接膜1b由上述组成构成，因此热流动性优良，如图4所示，键合引线4的端子6附近的部位41即使在粘接膜1b内通过，键合引线也不会变形、切断，能够实现电连接。
另外，由于粘接膜1b的平均线膨胀小，因此，热固化时能够在不损伤键合引线4的情况下进行热固化。
在图4中，对第一半导体元件21的俯视角度的面积与第二半导体元件22的俯视角度的面积大致相同的情况进行了说明，但是，并不限于此，第一半导体元件21的俯视角度上的面积也可以小于第二半导体元件22的俯视角度上的面积。
另外，对基板3和第一半导体元件21之间可以采用具有与上述粘接膜1b同样组成的粘接膜进行粘接，也可以采用糊状等粘接剂进行粘接。
另外，第一半导体元件21和第二半导体元件22优选用密封材料等进行密封。
实施例
下面，基于实施例和比较例来详细说明本发明，但是，本发明并不限于此。
(实施例1)
<粘接膜的制造>
将作为环氧树脂的EOCN-1020-80(邻甲酚酚醛清漆型环氧树脂)(环氧当量200g/eq，日本化药(株)制造)19.67重量％、NC6000(三官能环氧树脂)(环氧当量200g/eq，日本化药(株)制造)29.47重量％、作为丙烯酸系树脂的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，玻璃化转变温度：6℃，重均分子量：800000，长濑精细化工(株)制造)9.98重量％、作为丙烯酸系低聚物的UG-4010(玻璃化转变温度：-57℃，重均分子量：2900，常温下为液态，东亚合成(株)制造)9.98重量％、作为固化剂的液态苯酚化合物(MEH-8000H，羟基当量141g/OH基，明和化成(株)制造)18.43重量％、固态酚醛树脂(PR-HF-3，羟基当量104/OH基，住友电木(株)制造)12.31重量％、作为固化催化剂的咪唑化合物(2P4MHZ-PW，熔点195℃，四国化成工业(株)制造)0.13重量％、以及作为偶联剂的γ-环氧丙氧基丙基三甲氧基硅烷(KBM403E，信越化学工业(株)制造)0.03重量％溶解于甲基乙基酮(MEK)，得到树脂固体成分59％的树脂清漆。
接下来，使用逗点涂布机将上述树脂清漆涂布在聚对苯二甲酸乙二醇酯膜(产品编号MRX50，厚度50μm，三菱化学聚酯薄膜(株)制造)，然后，在90℃下干燥5分钟，得到厚度25μm的粘接膜。
得到的粘接膜在100℃下的熔融粘度是54Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是32MPa。
作为粘合膜，采用クリアテックCT-H717(可乐丽(株)制造)，通过挤出机形成厚度100μm的基材膜，并对表面进行电晕处理。接着，将丙烯酸2-乙基己酯50重量份、丙烯酸丁酯10重量份、乙酸乙烯酯37重量份、甲基丙烯酸2-羟乙酯3重量份进行共聚，并将由此得到的重均分子量500000的共聚物涂布在进行过剥离处理的厚度38μm的聚酯膜(相当于粘合膜的覆膜)，使得干燥后的厚度为10μm，在80℃下干燥5分钟，得到粘合剂层。然后，将该粘合剂层层压在基材膜的电晕处理面上得到粘合膜。
接下来，仅对上述半导体用粘接膜的膜状粘接剂层(仅保留与晶片接合的部分)进行半切，从上述粘合膜上剥离覆膜后进行贴附，使得半导体用粘接膜的粘接膜层和粘合层接合。由此，得到带切割片功能的贴片膜(die-attachfilm，DAF)。
<半导体装置的制造>
剥离该带切割片功能的贴片膜的基材，在温度40℃、压力0.3MPa的条件下，将粘接膜面贴附在5英寸200μm晶片的背面，得到附有带切割片功能的贴片膜的晶片。
然后，使用切割机，以主轴旋转数30000rpm、切断速度50mm/sec的条件，将该晶片切割(切断)成5mm×5mm方形的半导体元件的尺寸。接下来，从带切割功能的贴片膜的背面顶起，在基材膜(II)和粘合层间剥离，得到粘接了粘接剂层(粘接膜)的半导体元件。将该半导体元件在涂布有阻焊剂(商品名：AUS308，太阳油墨制造(株)制造)的双马来酰亚胺-三嗪树脂基板(电路高低差(回路段差)5～10μm)上于130℃、5N条件下压合1.0秒钟，进行芯片键合，并在120℃热处理1小时，使粘接膜部半固化后，用密封树脂EME-G760密封，在175℃下热处理2小时，使密封树脂固化，从而得到10个半导体装置。
(实施例2)
作为丙烯酸系低聚物使用以下的物质，除此以外与实施例1同样地操作。
作为丙烯酸系低聚物，使用UC-3900(玻璃化转变温度：60℃，重均分子量：4600，常温下为固态，东亚合成(株)制造)。
得到的粘接膜在100℃下的熔融粘度是65Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是31MPa。
(实施例3)
将丙烯酸系树脂和丙烯酸系低聚物的配合比调整为如下，除此以外，与实施例1同样地操作。
作为丙烯酸系树脂的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，玻璃化转变温度：6℃，重均分子量：800000，长濑精细化工(株)制造)为7.48重量％、作为丙烯酸系低聚物的UG-4010(玻璃化转变温度：-57℃，重均分子量：2900，常温下为液态，东亚合成(株)制造)为12.48重量％。
得到的粘接膜在100℃下的熔融粘度是36Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是30MPa。
(实施例4)
将丙烯酸系树脂和丙烯酸系低聚物的配合比调整为如下，除此以外，与实施例1同样地操作。
作为丙烯酸系树脂的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，玻璃化转变温度：6℃，重均分子量：800000，长濑精细化工(株)制造)为13.31重量％、作为丙烯酸系低聚物的UG-4010(玻璃化转变温度：-57℃，重均分子量：2900，常温下为液态，东亚合成(株)制造)为6.65重量％。
得到的粘接膜在100℃下的熔融粘度是102Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是21MPa。
(实施例5)
作为丙烯酸系低聚物使用以下的物质，除此以外与实施例1同样地操作。
作为丙烯酸系低聚物，使用UP-1000(玻璃化转变温度：-77℃，重均分子量：3000，东亚合成(株)制造)。
得到的粘接膜在100℃下的熔融粘度是52Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是12MPa。
(实施例6)
作为丙烯酸系树脂使用以下的物质，除此以外，与实施例1同样地操作。
作为丙烯酸系树脂，使用丙烯酸酯共聚物(丙烯酸丁酯-丙烯腈-丙烯酸乙酯共聚物，SG-PZ-DR，玻璃化转变温度：15℃，重均分子量：850000，长濑精细化工(株)制造)。
得到的粘接膜在100℃下的熔融粘度是58Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是27MPa。
(比较例1)
作为丙烯酸系低聚物使用以下的物质，除此以外，与实施例1同样地操作。
采用丙烯酸系低聚物UC-3910(玻璃化转变温度：85℃，重均分子量：8500，东亚合成(株)制造)。
得到的粘接膜在100℃下的熔融粘度是143Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是26MPa。
(比较例2)
将丙烯酸系树脂和丙烯酸系低聚物的配合比调整为如下，除此以外，与实施例1同样地操作。
作为丙烯酸系树脂的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，玻璃化转变温度：6℃，重均分子量：800000，长濑精细化工(株)制造)为2.00重量％、作为丙烯酸系低聚物的UG-4010(玻璃化转变温度：-57℃，重均分子量：2900，常温下为液态，东亚合成(株)制造)为17.96重量％。
得到的粘接膜在100℃下的熔融粘度是10Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是4.7MPa。
(比较例3)
将丙烯酸系树脂和丙烯酸系低聚物的配合比调整为如下，除此以外，与实施例1同样地操作。
作为丙烯酸系树脂的丙烯酸酯共聚物(丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲基丙烯酸羟乙酯共聚物，SG-708-6DR，玻璃化转变温度：6℃，重均分子量：800000，长濑精细化工(株)制造)为18.96重量％、作为丙烯酸系低聚物的UG-4010(玻璃化转变温度：-57℃，重均分子量：2900，常温下为液态，东亚合成(株)制造)为1.00重量％。
得到的粘接膜在100℃下的熔融粘度是192Pa·s。
另外，将得到的粘接膜固化后(175℃×2小时热处理后)的175℃下的弹性模量是17MPa。
对于在各实施例和比较例中得到的粘接膜，进行如下的评价。将评价项目与内容一起表示。得到的结果示于表1中。
1.初期填埋性
就初期填埋性(电路填充性)而言，对各实施例和比较例中得到的树脂密封前的半导体装置，通过扫描型超声波探伤机(SAT)，评价半导体用粘接膜填充有机基板上的电路高低差内的填充率。各符号的含义如下。
◎：填充率为90％～100％。
○：填充率为80％以上且小于90％。
△：填充率为40％以上且小于80％。
×：填充率为小于40％。
2.保存性
就得到的粘接膜的保存性而言，作为加速试验，测定在50℃下对粘接膜处理1整天后的固化放热量，以保存处理后的固化放热量(mJ/mg)相对于初期固化放热量(mJ/mg)的百分率进行评价。单位是％。该值越接近100％表示保存性越高。固化放热量的评价使用了差示扫描量热仪(DSC)。
◎：固化放热量之比的百分率为90％以上。
○：固化放热量之比的百分率为70％以上且小于90％。
△：固化放热量之比的百分率为50％以上且小于70％。
×：固化放热量之比的百分率为小于50％。
3.耐热性
得到的粘接膜的耐热性，通过热机械分析(TMA)以固化后的粘接膜的玻璃化转变温度(Tg)进行评价。
4.低温贴附性
将各实施例和比较例中的粘接膜在温度40℃、压力0.3MPa的条件下贴附在厚度550μm的晶片背面后，评价其180°剥离强度。
◎：剥离强度为100N/m以上。
○：剥离强度为50N/m以上且小于100N/m。
△：剥离强度为30N/m以上且小于50N/m。
×：剥离强度为小于30N/m。
5.有无填充材料的混入等
用密封树脂密封半导体元件和键合引线后，通过显微镜以观察半导体装置剖面的方式观察是否有填充材料混入粘接膜。各符号的含义如下。
◎：几乎没有填充材料混入到粘接膜中。
×：填充材料混入到粘接膜中，一部分半导体元件中有裂纹等。
表1
Figure G2007800534609D00181
由表1可以看出，实施例1～6中得到的粘接膜的初期填埋性优良。
另外，实施例1～6中得到的粘接膜的耐热性也优良，并且低温下的贴附性也优良。
另外，实施例1～6中得到的半导体装置中，几乎没有填充材料混入到粘接膜中。
工业实用性
通过本发明，能够提供一种粘接膜及使用该粘接膜的半导体装置，该粘接膜通过前述接合工序中的加热而软化，提高了对基板凹凸的填埋性。因而，具有工业上的实用性。

Claims (16)

1.一种粘接膜，其为用于将半导体元件和基板或者半导体元件和半导体元件进行接合的粘接膜，其特征在于，
所述粘接膜由含有环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，所述丙烯酸系树脂的含量Wa和所述丙烯酸系低聚物的含量Wb之比Wa/Wb为0.5～4。
2.根据权利要求1所述的粘接膜，其中，所述丙烯酸系低聚物的玻璃化转变温度为-30℃以下。
3.根据权利要求1所述的粘接膜，其中，所述丙烯酸系低聚物的含量是所述树脂组合物总量的5～30重量％。
4.根据权利要求1所述的粘接膜，其中，所述丙烯酸系低聚物具有羧基和缩水甘油基中的至少一种基团。
5.根据权利要求1所述的粘接膜，其中，所述丙烯酸系低聚物在常温下为液态。
6.根据权利要求1所述的粘接膜，其中，所述树脂组合物含有固化剂。
7.根据权利要求6所述的粘接膜，其中，所述固化剂含有液态苯酚化合物。
8.根据权利要求1所述的粘接膜，其中，所述树脂组合物进一步含有固化催化剂。
9.根据权利要求8所述的粘接膜，其中，所述固化催化剂含有咪唑化合物。
10.根据权利要求8所述的粘接膜，其中，所述固化催化剂的熔点是150℃以上。
11.根据权利要求1所述的粘接膜，其中，所述粘接膜在100℃下的熔融粘度是80Pa·s以下。
12.一种粘接膜，其是将权利要求1所述的粘接膜在175℃下热处理2小时后的固化物在175℃下的弹性模量是30MPa以上的粘接膜。
13.一种粘接膜，其用作半导体装置的粘接层，所述半导体装置是在基板的一个面侧，依次层叠第一半导体元件、粘接层和第二半导体元件，在所述第一半导体元件的功能面上形成的端子和基板通过键合引线电连接，所述键合引线的所述端子附近的部位在所述粘接层内通过来形成，其特征在于，
所述粘接膜由含有环氧树脂、丙烯酸系树脂和重均分子量6000以下的丙烯酸系低聚物的树脂组合物构成，并且，所述丙烯酸系树脂的含量Wa和所述丙烯酸系低聚物的含量Wb之比Wa/Wb为0.5～4。
14.根据权利要求13所述的粘接膜，其中，所述第二半导体元件的俯视角度的面积与所述第一半导体元件的俯视角度的面积大致相同。
15.根据权利要求13所述的粘接膜，其中，所述第二半导体元件的俯视角度的面积比所述第一半导体元件的俯视角度的面积大。
16.一种半导体装置，其特征在于，使用权利要求1所述的粘接膜接合半导体元件和基板或者半导体元件和半导体元件。
CN200780053460A 2007-06-22 2007-12-27 粘接膜及使用该粘接膜的半导体装置 Pending CN101681845A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102911616A (zh) * 2011-08-03 2013-02-06 日东电工株式会社 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
CN107523014A (zh) * 2016-06-16 2017-12-29 信越化学工业株式会社 环氧树脂组合物

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5820170B2 (ja) * 2011-07-13 2015-11-24 日東電工株式会社 半導体装置用の接着フィルム、フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム
JP6028356B2 (ja) * 2012-03-22 2016-11-16 日立化成株式会社 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP5499111B2 (ja) * 2012-07-06 2014-05-21 日東電工株式会社 半導体装置用接着剤組成物、半導体装置用接着フィルム、ダイシングフィルム付き接着フィルム、半導体装置の製造方法、及び半導体装置
JP6037927B2 (ja) * 2013-04-17 2016-12-07 オリンパス株式会社 接着剤組成物および内視鏡装置
JP6366228B2 (ja) * 2013-06-04 2018-08-01 日東電工株式会社 接着シート、及びダイシング・ダイボンディングフィルム
JP6292808B2 (ja) * 2013-09-13 2018-03-14 デクセリアルズ株式会社 接着剤、及び発光装置
US20190206827A1 (en) * 2017-12-29 2019-07-04 Intel Corporation Semiconductor package with externally accessible wirebonds
JP7216365B2 (ja) * 2018-10-01 2023-02-01 旭化成株式会社 マイクロ流路用感光性樹脂積層体
JP7198644B2 (ja) 2018-11-27 2023-01-04 住友化学株式会社 エポキシ樹脂組成物及びその硬化物
JP7151550B2 (ja) * 2019-02-26 2022-10-12 味の素株式会社 樹脂組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410202B2 (ja) * 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
US5698657A (en) * 1995-05-09 1997-12-16 Air Products And Chemicals, Inc. Flexibilizing epoxy resins with low molecular weight acrylate copolymers
JP3617504B2 (ja) 1996-10-08 2005-02-09 日立化成工業株式会社 半導体素子搭載用接着フィルム
JP4869517B2 (ja) * 2001-08-21 2012-02-08 リンテック株式会社 粘接着テープ
JP2005327789A (ja) * 2004-05-12 2005-11-24 Sharp Corp ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法
JP4417198B2 (ja) * 2004-08-02 2010-02-17 日東電工株式会社 光導波路の製造方法
JP4668001B2 (ja) * 2005-08-18 2011-04-13 リンテック株式会社 ダイシング・ダイボンド兼用シートおよびこれを用いた半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102911616A (zh) * 2011-08-03 2013-02-06 日东电工株式会社 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
CN102911616B (zh) * 2011-08-03 2016-01-20 日东电工株式会社 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
CN105505244A (zh) * 2011-08-03 2016-04-20 日东电工株式会社 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
TWI552216B (zh) * 2011-08-03 2016-10-01 日東電工股份有限公司 晶片接合薄膜、切割/晶片接合薄膜及半導體裝置
CN107523014A (zh) * 2016-06-16 2017-12-29 信越化学工业株式会社 环氧树脂组合物

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