CN101665908A - 形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置 - Google Patents

形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置 Download PDF

Info

Publication number
CN101665908A
CN101665908A CN200810214850A CN200810214850A CN101665908A CN 101665908 A CN101665908 A CN 101665908A CN 200810214850 A CN200810214850 A CN 200810214850A CN 200810214850 A CN200810214850 A CN 200810214850A CN 101665908 A CN101665908 A CN 101665908A
Authority
CN
China
Prior art keywords
ferroelectric film
film
ferroelectric
substrate
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200810214850A
Other languages
English (en)
Chinese (zh)
Inventor
新川高见
藤井隆满
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN101665908A publication Critical patent/CN101665908A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/145—Arrangement thereof
    • B41J2/155—Arrangement thereof for line printing
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/768—Perovskite structure ABO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Composite Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
CN200810214850A 2007-09-05 2008-09-03 形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置 Pending CN101665908A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007229790 2007-09-05
JP2007229790A JP2009062564A (ja) 2007-09-05 2007-09-05 ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置

Publications (1)

Publication Number Publication Date
CN101665908A true CN101665908A (zh) 2010-03-10

Family

ID=40130515

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810214850A Pending CN101665908A (zh) 2007-09-05 2008-09-03 形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置

Country Status (4)

Country Link
US (1) US20090058954A1 (enExample)
EP (1) EP2034042A3 (enExample)
JP (1) JP2009062564A (enExample)
CN (1) CN101665908A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103765768A (zh) * 2011-08-26 2014-04-30 株式会社村田制作所 压电器件以及压电器件的制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410686B2 (ja) * 2008-03-21 2014-02-05 富士フイルム株式会社 圧電体膜の製造方法、成膜装置および圧電体膜
JP5839157B2 (ja) * 2010-03-02 2016-01-06 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5754619B2 (ja) * 2010-03-02 2015-07-29 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5854183B2 (ja) 2010-03-02 2016-02-09 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5854184B2 (ja) * 2010-03-02 2016-02-09 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
JP5716897B2 (ja) * 2010-03-02 2015-05-13 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外センサー
WO2014148336A1 (ja) * 2013-03-22 2014-09-25 独立行政法人科学技術振興機構 誘電体層及び誘電体層の製造方法、並びに固体電子装置及び固体電子装置の製造方法
JP6258241B2 (ja) * 2015-02-27 2018-01-10 富士フイルム株式会社 圧電アクチュエータ
CN107727845B (zh) * 2017-09-26 2019-09-10 中国科学院苏州生物医学工程技术研究所 Lamb波传感器、生物检测芯片和快速筛查系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2532381B2 (ja) * 1986-03-04 1996-09-11 松下電器産業株式会社 強誘電体薄膜素子及びその製造方法
US6964873B2 (en) * 1999-10-29 2005-11-15 Fujitsu Limited Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
US6277254B1 (en) * 1999-12-16 2001-08-21 Honeywell International Inc. Ceramic compositions, physical vapor deposition targets and methods of forming ceramic compositions
JP4266474B2 (ja) 2000-01-21 2009-05-20 キヤノン株式会社 圧電体磁器組成物の製造方法及び圧電体素子の製造方法
JP4266480B2 (ja) 2000-03-08 2009-05-20 キヤノン株式会社 圧電体磁器組成物およびその製造方法、圧電体素子およびその製造方法、ならびに、それを用いたインクジェット式プリンタヘッドおよび超音波モータ
JP2003301262A (ja) * 2002-04-10 2003-10-24 Sumitomo Metal Mining Co Ltd 強誘電体薄膜、及び強誘電体薄膜作成用スパッタリングターゲット材料
JP4324796B2 (ja) 2004-08-30 2009-09-02 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、および強誘電体メモリ
JP2006188414A (ja) 2004-12-07 2006-07-20 Murata Mfg Co Ltd 圧電磁器組成物、及び圧電セラミック電子部品
JP4426488B2 (ja) 2005-03-22 2010-03-03 三菱樹脂株式会社 熱収縮性積層フィルム及び該フィルムを用いた成形品、容器
US7998362B2 (en) * 2005-08-23 2011-08-16 Canon Kabushiki Kaisha Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, liquid discharge apparatus, and production method of piezoelectric element
US20070046153A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103765768A (zh) * 2011-08-26 2014-04-30 株式会社村田制作所 压电器件以及压电器件的制造方法
CN103765768B (zh) * 2011-08-26 2016-06-01 株式会社村田制作所 压电器件以及压电器件的制造方法

Also Published As

Publication number Publication date
EP2034042A2 (en) 2009-03-11
JP2009062564A (ja) 2009-03-26
EP2034042A3 (en) 2009-11-11
US20090058954A1 (en) 2009-03-05

Similar Documents

Publication Publication Date Title
CN101665908A (zh) 形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置
CN101381858A (zh) 形成铁电体膜的方法、铁电体膜、铁电体器件和液体排出装置
EP1973177B1 (en) Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
CN101665907B (zh) 通过溅射技术在基板上形成铁电体膜的方法
JP5367242B2 (ja) 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
CN101373810B (zh) 压电元件及使用了该压电元件的液体喷出装置
US20080278038A1 (en) Piezoelectric device, process for producing the piezoelectric device, and liquid discharge device
US8215753B2 (en) Piezoelectric material, method for producing piezoelectric material, piezoelectric device and liquid discharge device
JP4505492B2 (ja) ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置
EP2034040A2 (en) Perovskite type oxide, ferroelectric film, process for producing same, ferroelectric device, and liquid discharge apparatus
US20080218559A1 (en) Piezoelectric device, process for producing the same, and liquid discharge device
US20110316937A1 (en) Piezoelectric film, piezoelectric device and liquid ejection apparatus
US20160020381A1 (en) Piezoelectric film and method for manufacturing same
US8210658B2 (en) Piezoelectric material, method for producing piezoelectric material, piezoelectric device and liquid discharge device
EP1906466A1 (en) Piezoelectric film, process of manufacturing the same and piezoelectric element
JP2009293130A (ja) ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置
JP4851108B2 (ja) 複合ペロブスカイト型化合物の膜の成膜方法、並びに、それを用いた液体吐出ヘッドの製造方法
JP2008261061A (ja) 圧電膜とその成膜方法、及び圧電素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20100310