CN101657562B - 溅镀装置及溅镀方法 - Google Patents
溅镀装置及溅镀方法 Download PDFInfo
- Publication number
- CN101657562B CN101657562B CN2008800118311A CN200880011831A CN101657562B CN 101657562 B CN101657562 B CN 101657562B CN 2008800118311 A CN2008800118311 A CN 2008800118311A CN 200880011831 A CN200880011831 A CN 200880011831A CN 101657562 B CN101657562 B CN 101657562B
- Authority
- CN
- China
- Prior art keywords
- cathode
- sputtering
- gas
- cathode target
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP120708/2007 | 2007-05-01 | ||
| JP2007120708A JP4707693B2 (ja) | 2007-05-01 | 2007-05-01 | スパッタリング装置及びスパッタリング方法 |
| PCT/JP2008/057894 WO2008136337A1 (ja) | 2007-05-01 | 2008-04-24 | スパッタリング装置及びスパッタリング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101657562A CN101657562A (zh) | 2010-02-24 |
| CN101657562B true CN101657562B (zh) | 2011-05-11 |
Family
ID=39943448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800118311A Active CN101657562B (zh) | 2007-05-01 | 2008-04-24 | 溅镀装置及溅镀方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4707693B2 (enExample) |
| KR (1) | KR101050121B1 (enExample) |
| CN (1) | CN101657562B (enExample) |
| TW (1) | TWI433949B (enExample) |
| WO (1) | WO2008136337A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5975653B2 (ja) * | 2011-01-25 | 2016-08-23 | Hoya株式会社 | マスクブランク製造用スパッタリング装置及び表示装置用マスクブランクの製造方法並びに表示装置用マスクの製造方法 |
| JP5721815B2 (ja) * | 2011-04-12 | 2015-05-20 | 株式会社アルバック | ターゲット及びターゲットの製造方法 |
| KR20120130518A (ko) * | 2011-05-23 | 2012-12-03 | 삼성디스플레이 주식회사 | 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법 |
| JP5875462B2 (ja) * | 2012-05-21 | 2016-03-02 | 株式会社アルバック | スパッタリング方法 |
| AT513190B9 (de) | 2012-08-08 | 2014-05-15 | Berndorf Hueck Band Und Pressblechtechnik Gmbh | Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs |
| JP6196078B2 (ja) * | 2012-10-18 | 2017-09-13 | 株式会社アルバック | 成膜装置 |
| JP6251588B2 (ja) * | 2014-02-04 | 2017-12-20 | 株式会社アルバック | 成膜方法 |
| CN106103787B (zh) * | 2014-03-18 | 2019-06-28 | 应用材料公司 | 用于静态反应溅射的工艺气体分段 |
| WO2019176343A1 (ja) * | 2018-03-16 | 2019-09-19 | 株式会社アルバック | 成膜方法 |
| KR102395512B1 (ko) | 2020-07-16 | 2022-05-09 | 제이엔티(주) | 자체 안전제동 전동기 구동 노약자 보행보조장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2443972Y (zh) * | 2000-08-18 | 2001-08-22 | 深圳威士达真空系统工程有限公司 | 中频反应溅射镀膜设备中反应气体的供气装置 |
| CN1670243A (zh) * | 2004-03-19 | 2005-09-21 | 株式会社爱发科 | 溅射方法及其装置 |
| CN1904132A (zh) * | 2005-07-29 | 2007-01-31 | 株式会社爱发科 | 溅射装置和溅射方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03193870A (ja) * | 1989-12-25 | 1991-08-23 | Matsushita Electric Ind Co Ltd | 低ガス圧力スパッタリング装置 |
| DE4140862A1 (de) * | 1991-12-11 | 1993-06-17 | Leybold Ag | Kathodenzerstaeubungsanlage |
| JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
-
2007
- 2007-05-01 JP JP2007120708A patent/JP4707693B2/ja active Active
-
2008
- 2008-04-24 CN CN2008800118311A patent/CN101657562B/zh active Active
- 2008-04-24 WO PCT/JP2008/057894 patent/WO2008136337A1/ja not_active Ceased
- 2008-04-24 KR KR1020097021361A patent/KR101050121B1/ko active Active
- 2008-04-29 TW TW097115718A patent/TWI433949B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2443972Y (zh) * | 2000-08-18 | 2001-08-22 | 深圳威士达真空系统工程有限公司 | 中频反应溅射镀膜设备中反应气体的供气装置 |
| CN1670243A (zh) * | 2004-03-19 | 2005-09-21 | 株式会社爱发科 | 溅射方法及其装置 |
| CN1904132A (zh) * | 2005-07-29 | 2007-01-31 | 株式会社爱发科 | 溅射装置和溅射方法 |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2005-290550A 2005.10.20 |
| JP特开平5-239634A 1993.09.17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008274366A (ja) | 2008-11-13 |
| JP4707693B2 (ja) | 2011-06-22 |
| KR20090122383A (ko) | 2009-11-27 |
| TWI433949B (zh) | 2014-04-11 |
| CN101657562A (zh) | 2010-02-24 |
| KR101050121B1 (ko) | 2011-07-19 |
| WO2008136337A1 (ja) | 2008-11-13 |
| TW200920868A (en) | 2009-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |