CN101652854A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101652854A
CN101652854A CN200880010966A CN200880010966A CN101652854A CN 101652854 A CN101652854 A CN 101652854A CN 200880010966 A CN200880010966 A CN 200880010966A CN 200880010966 A CN200880010966 A CN 200880010966A CN 101652854 A CN101652854 A CN 101652854A
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CN
China
Prior art keywords
film
insulating film
conductive portion
metal
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880010966A
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English (en)
Chinese (zh)
Inventor
平濑顺司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101652854A publication Critical patent/CN101652854A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN200880010966A 2008-01-25 2008-12-22 半导体装置及其制造方法 Pending CN101652854A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008014818A JP2009176997A (ja) 2008-01-25 2008-01-25 半導体装置及びその製造方法
JP014818/2008 2008-01-25

Publications (1)

Publication Number Publication Date
CN101652854A true CN101652854A (zh) 2010-02-17

Family

ID=40898341

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880010966A Pending CN101652854A (zh) 2008-01-25 2008-12-22 半导体装置及其制造方法

Country Status (5)

Country Link
US (1) US8129794B2 (enExample)
JP (1) JP2009176997A (enExample)
CN (1) CN101652854A (enExample)
TW (1) TW200939455A (enExample)
WO (1) WO2009093295A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448912A (zh) * 2014-09-24 2016-03-30 瑞萨电子株式会社 半导体装置及其制造方法
CN107124565A (zh) * 2016-02-25 2017-09-01 松下知识产权经营株式会社 摄像装置
CN113078098A (zh) * 2020-01-03 2021-07-06 世界先进积体电路股份有限公司 半导体结构及其制造方法

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* Cited by examiner, † Cited by third party
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WO2012077256A1 (ja) * 2010-12-06 2012-06-14 パナソニック株式会社 半導体装置及びその製造方法
WO2012107970A1 (ja) * 2011-02-10 2012-08-16 パナソニック株式会社 半導体装置
JP2013247345A (ja) * 2012-05-29 2013-12-09 Ps4 Luxco S A R L 半導体装置及びその製造方法
JP5717706B2 (ja) * 2012-09-27 2015-05-13 株式会社東芝 半導体装置及びその製造方法
US9219155B2 (en) * 2013-12-16 2015-12-22 Intel Corporation Multi-threshold voltage devices and associated techniques and configurations
KR102190673B1 (ko) 2014-03-12 2020-12-14 삼성전자주식회사 중간갭 일함수 금속 게이트 전극을 갖는 반도체 소자
DE102018130833B4 (de) * 2018-09-27 2022-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
US10867864B2 (en) 2018-09-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10707206B2 (en) * 2018-11-19 2020-07-07 Globalfoundries Inc. Gate cut isolation formed as layer against sidewall of dummy gate mandrel
KR102839927B1 (ko) 2019-09-17 2025-07-30 삼성전자주식회사 반도체 소자
US11626288B2 (en) * 2021-07-30 2023-04-11 Applied Materials, Inc. Integrated contact silicide with tunable work functions

Citations (2)

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CN1873985A (zh) * 2005-05-31 2006-12-06 三洋电机株式会社 半导体装置
TW200711046A (en) * 2005-09-02 2007-03-16 Infineon Technologies Ag Transistors and methods of manufacture thereof

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JPH11260934A (ja) * 1998-03-10 1999-09-24 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6373111B1 (en) 1999-11-30 2002-04-16 Intel Corporation Work function tuning for MOSFET gate electrodes
KR100399356B1 (ko) * 2001-04-11 2003-09-26 삼성전자주식회사 듀얼 게이트를 가지는 씨모스형 반도체 장치 형성 방법
JP2003282875A (ja) 2002-03-27 2003-10-03 Toshiba Corp 半導体装置及び半導体装置の製造方法
AU2003236078A1 (en) * 2003-04-10 2004-11-04 Fujitsu Limited Semiconductor device and its manufacturing method
KR100502426B1 (ko) * 2003-09-18 2005-07-20 삼성전자주식회사 듀얼 게이트를 갖는 반도체 소자 및 그 형성 방법
TWI367560B (en) * 2004-07-05 2012-07-01 Samsung Electronics Co Ltd Integrated circuit devices including a dual gate stack structure and methods of forming the same
JP2006041339A (ja) * 2004-07-29 2006-02-09 Fujitsu Ltd Ｃｍｏｓ集積回路
JP4533155B2 (ja) * 2005-01-12 2010-09-01 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2006324342A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置およびその製造方法
US20070052037A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Semiconductor devices and methods of manufacture thereof
JP2007258224A (ja) * 2006-03-20 2007-10-04 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4929867B2 (ja) * 2006-06-19 2012-05-09 富士通セミコンダクター株式会社 半導体装置の製造方法
CN101123252B (zh) * 2006-08-10 2011-03-16 松下电器产业株式会社 半导体装置及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1873985A (zh) * 2005-05-31 2006-12-06 三洋电机株式会社 半导体装置
TW200711046A (en) * 2005-09-02 2007-03-16 Infineon Technologies Ag Transistors and methods of manufacture thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448912A (zh) * 2014-09-24 2016-03-30 瑞萨电子株式会社 半导体装置及其制造方法
CN105448912B (zh) * 2014-09-24 2020-11-27 瑞萨电子株式会社 半导体装置及其制造方法
CN107124565A (zh) * 2016-02-25 2017-09-01 松下知识产权经营株式会社 摄像装置
CN107124565B (zh) * 2016-02-25 2020-11-17 松下知识产权经营株式会社 摄像装置
CN113078098A (zh) * 2020-01-03 2021-07-06 世界先进积体电路股份有限公司 半导体结构及其制造方法

Also Published As

Publication number Publication date
WO2009093295A1 (ja) 2009-07-30
US8129794B2 (en) 2012-03-06
JP2009176997A (ja) 2009-08-06
TW200939455A (en) 2009-09-16
US20090189225A1 (en) 2009-07-30

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Application publication date: 20100217