CN101592869A - Exposure equipment focal distance monitoring method - Google Patents
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- CN101592869A CN101592869A CNA2008101136889A CN200810113688A CN101592869A CN 101592869 A CN101592869 A CN 101592869A CN A2008101136889 A CNA2008101136889 A CN A2008101136889A CN 200810113688 A CN200810113688 A CN 200810113688A CN 101592869 A CN101592869 A CN 101592869A
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Abstract
The method of a kind of exposure equipment focal distance monitoring comprises: the mask plate with reference mark is provided, by photoetching process and etching technics, with described reference mark transfer to substrate on, in described substrate, form the reference mark pattern; Mask plate with test badge is provided; In substrate, form photoresist layer, utilize described exposure sources to carry out photoetching process, described test badge is transferred in the described photoresist layer, form the test badge pattern with described reference mark pattern; Measure the side-play amount of described test badge pattern and reference mark pattern; If described side-play amount is not equal to desired value, then described exposure sources departs from optimum exposure position.This method processing step is simple, and efficiency of measurement is higher.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method of exposure equipment focal distance monitoring.
Background technology
In the SIC (semiconductor integrated circuit) manufacturing process, the territory pattern on the mask plate is transferred in the photoresist layer of Semiconductor substrate, formed the photoresist pattern by the exposure sources (ExposureEquipment) of photoetching process; Then, as mask layer, Semiconductor substrate is carried out follow-up etching or ion implantation technology with this photoresist pattern.
In photoetching process, the live width of photoresist pattern with and side wall profile can be exposed the influence that equipment focuses on situation.And the live width of photoresist pattern and profile can directly influence follow-up etching or ion implantation technology, thereby the monitoring that exposure sources focuses on situation (is called to focus on and monitors, FocusMonitor) seem particularly important.
Exposure sources is when work, the light that exposure light source sends is projeced on the mask plate with semiconductor device one deck territory pattern after collimating, the light that passes this mask plate carries the information of territory pattern, after light passes described mask plate, through imaging system, be incident upon on the photoresist layer of Semiconductor substrate, make photoresist layer sensitization.
Because focal length variations can cause the profile varying of the photoresist pattern of formation, and then cause that live width changes, no matter be to depart from pinpointed focus in (near the imaging system of exposure sources) still downward (away from imaging system of exposure sources) upwards, the dim pattern after the exposure is caused in the capital, thereby for same mask plate pattern, by the photoresist pattern that exposure sources exposes under different focal lengths and forms, live width is maximum when pinpointed focus.The monitoring method of the focal length of exposure sources of the prior art is based on that above-mentioned principle designs more.For example, in being the Chinese patent application file of CN1459670A, publication number discloses a kind of focal distance monitoring method based on above-mentioned principle.
Yet, when utilizing above-mentioned principle to come focal length to exposure sources to detect, need exposure sources under different focal lengths, to form the photoresist pattern, and measure the live width of described photoresist pattern one by one, and also to obtain the focal length of exposure sources according to the corresponding focal length of the photoresist pattern of this maximum live width by relatively finding out maximum live width.Step is complicated and loaded down with trivial details, and efficient is lower.And can only off-line monitoring, make normal production process be affected.
Summary of the invention
The invention provides a kind of monitoring method of exposure equipment focal distance, to solve the problem that existing monitoring method step complexity is loaded down with trivial details, efficient is lower.
The method of a kind of exposure equipment focal distance monitoring provided by the invention comprises:
Mask plate with reference mark is provided, by photoetching process and etching technics, with described reference mark transfer to substrate on, in described substrate, form the reference mark pattern;
Mask plate with test badge is provided;
In substrate, form photoresist layer, utilize described exposure sources to carry out photoetching process, described test badge is transferred in the described photoresist layer, form the test badge pattern with described reference mark pattern;
Measure the side-play amount of described test badge pattern and reference mark pattern;
If described side-play amount is not equal to desired value, then described exposure sources departs from optimum exposure position.
Optionally, further comprise: judge whether described side-play amount exceeds the threshold range of desired value, if then need to stop exposure sources work.
Optionally, further comprise:, obtain the real focal length of exposure sources according to the corresponding relation of described side-play amount and exposure equipment focal distance.
Optionally, described reference mark and test badge are overlay mark.
Optionally, described reference mark and test badge are formed on the Cutting Road of the periphery with device pattern.
Optionally, measure described side-play amount by the alignment measuring equipment.
Compared with prior art, in the technique scheme has the following advantages:
In the described method, contrast, whether change to judge described side-play amount and its desired value, and then can know whether this exposure sources is operated under the optimum exposure focal length state by the side-play amount of measuring basis mark and test badge and with desired value; Need repeatedly measure the live width of a plurality of patterns with respect to prior art, calculate maximum line width according to live width, and according to the anti-method that pushes away pinpointed focus of maximum line width, this method processing step be simple, efficiency of measurement is higher;
In addition, this method can onlinely detect, and needn't carry out under the exposure sources off-line state, and test badge and reference mark can be formed at the periphery of the mask plate with product pattern, carry out simultaneously with the lithography step of product, can not take the time of exposure sources separately; Processing step is simple, needn't only get final product by one-shot measurement and with this measured value and desired value comparison through repeatedly measurements and calculations.
Description of drawings
Fig. 1 is for having the synoptic diagram of overlay mark mask plate among the embodiment of method of the present invention;
Fig. 2 is the synoptic diagram after one of them overlay mark of Fig. 1 amplifies;
Fig. 3 is the synoptic diagram of adjacent two shot that the mask plate design transfer of Fig. 1 back to the substrate is formed;
Fig. 4 is the synoptic diagram of the other mask plate with overlay mark of embodiments of the invention;
Fig. 5 is the synoptic diagram of the pattern with two mask plates of Fig. 1 and Fig. 5 after being formed in the substrate;
Fig. 6 is the synoptic diagram after the amplification of one of them overlay mark among Fig. 5.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the photoetching process that SIC (semiconductor integrated circuit) is made, the live width of photoresist pattern and side wall profile can be exposed the influence that equipment focuses on situation.And the live width of photoresist pattern and profile can directly influence follow-up etching or ion implantation technology, thereby the monitoring of exposure equipment focal distance seems extremely important.
Existing monitoring method to exposure equipment focal distance is many, and maximum this principle of live width is carried out during based on pinpointed focus, it is by forming the photoresist pattern under the exposure sources different focal, note to measure the live width of each photoresist pattern then, and the focal length during according to maximum line width is judged the best focus position of exposure sources.Whether, to judge this real focal length position be best focus position, and the distance that departs from best focus position according to best focus position that is obtained and existing real focal length position if then comparing.Yet this method is comparatively loaded down with trivial details, and needs off-line monitoring, need additionally take the exposure sources time.
The invention provides a kind of monitoring method of exposure equipment focal distance, this method comprises, mask plate with reference mark is provided, utilize described exposure sources to carry out photoetching process, the reference mark of described mask plate is at first transferred in the photoresist layer of substrate, then, with the reference mark in the photoresist layer is that mask is carried out etching technics, described reference mark is transferred in the substrate, in described substrate, formed the reference mark pattern, remove described photoresist layer.
Then, mask plate with test badge is provided, in described substrate with reference mark pattern, form photoresist layer once more, described test badge is transferred in the described photoresist layer, in described photoresist layer, form the test badge pattern by described exposure sources.
Follow again, measure the side-play amount of described test badge pattern and reference mark pattern.
Judge whether this side-play amount equals desired value, if not, show that then described exposure sources departs from optimum exposure position.
In the described method, described desired value is the setting value that described reference mark and test badge are transferred to suprabasil side-play amount; If when test badge is transferred to the photoresist layer of described substrate, the focal length of exposure sources changes, then can cause the side-play amount of test badge pattern and described reference mark pattern to change, judge whether side-play amount and its desired value change and to know whether this exposure sources is operated under the optimum exposure focal length state than desired value.
Described method needn't be carried out under the exposure sources off-line state, and test badge and reference mark can be formed at the periphery of the mask plate with product pattern, carries out simultaneously with the lithography step of product, can not take the time of exposure sources separately.And processing step is simple, needn't only get final product by one-shot measurement and with this measured value and desired value comparison through repeatedly measurements and calculations.
In addition, can also judge further whether described side-play amount exceeds the threshold range of desired value, whether need to stop exposure sources work with decision, exposure sources is done further detection.
In addition, can also obtain the real focal length of exposure sources according to the corresponding relation of described side-play amount and exposure equipment focal distance.
Wherein, described reference mark and test badge can be overlay marks, and this overlay mark can be the overlay mark of normal product, and needn't design separately, thereby can carry out simultaneously with the product manufacturing, measure also can measure with alignment and carry out simultaneously.
Be that overlay mark is the monitoring method that example illustrates exposure equipment focal distance of the present invention with described reference mark and test badge below.
Please refer to Fig. 1, mask plate 10 is provided, have the pattern of certain one deck of product on the described mask plate 10, be positioned at area of the pattern 12, for example, this layer pattern can be gate pattern, metal line pattern, connecting hole pattern etc., also can be other pattern.Have overlay mark 14 in the periphery of area of the pattern 12, in the present embodiment, described overlay mark is four, is distributed in four corner regions of described area of the pattern 12.In other embodiments, described overlay mark can also have other distribution, repeats no more here.This overlay mark is reference mark.Described overlay mark one side as the mark of measuring bilevel alignment precision, is used to monitor the focal length situation of exposure sources on the other hand in the present embodiment as reference mark when product is made.
That is to say that in the present embodiment, the overlay mark of certain one deck that utilizes product is as reference mark, and do not make reference mark on mask plate in addition.Certainly, in other embodiments, can on mask plate, make reference mark in addition, give unnecessary details no longer in detail here, but its principle is identical with the principle of the focal length of the described exposure sources of present embodiment, and those skilled in the art can instruction according to the present invention make corresponding variation or replacement.
Fig. 2 is the enlarged drawing of one of them overlay mark among Fig. 1, please refer to Fig. 2, and this overlay mark comprises four isolated lines, and described four lines are put respectively on foursquare four limits.In addition, described overlay mark also can repeat no more here for other pattern.
After described mask plate 10 with overlay mark 14 is provided, carry out photoetching process, described overlay mark 14 is together transferred to the photoresist layer of substrate together with the product pattern on the mask plate 10.Its concrete processing step can be as follows:
Substrate is provided, and can be nude film (bare wafer) in described substrate, also can be the semi-manufacture with other structure or device.
Described substrate is cleaned and dewatered, then (for example in certain temperature, can be 110 ℃ or higher temperature) under apply adhesive hexamethyldisilazane (HMDS) to described substrate surface, described HMDS is used to change the hydrophilic or hydrophobic state of described substrate surface, with the photoresist that increases follow-up spin coating and the adhesiveness of described substrate surface;
Then, described substrate is cooled to room temperature (for example about 23 ℃), described process for cooling can carry out on the cold drawing of spin-coating equipment;
Then, this substrate is placed on the brace table of spin coating chamber, spin coating photoresist in described substrate forms photoresist layer.Wherein, described photoresist layer can be the eurymeric photoresist, can be negative photoresist also, is positive photoresist in the present embodiment.
Form after the described photoresist layer, described substrate is placed on the substrate supports platform (Wafer stage) of exposure sources, the mask plate 10 that will have described overlay mark 14 simultaneously places on the mask plate bracing frame of this exposure sources (Reticle Stage);
By alignment mark on the described mask plate 10 (Alignment mark) and suprabasil zero layer alignment mark (zero mark) (certainly, also can make other alignment mark) described mask plate 10 and described substrate are aimed at; Open exposure light source, described exposure light source sees through optical system and expose to described suprabasil photoresist layer in mask plate 10 backs, and the pattern in the mask plate (pattern that comprises overlay mark and product) is transferred in the described photoresist layer.
Wherein, described exposure sources can be step printing equipment (stepper) or scanning type exposure equipment (Scanner).In the step printing equipment, the pattern on the mask plate 10 is transferred on the photoresist layer of substrate fully, and by moving described substrate, the photoresist layer of the diverse location of substrate is exposed by certain step-length by single exposure.
In the scanning type exposure equipment, the size of the light beam in the optical system is less than the size of mask plate 10, need be at the mobile mask plate 10 of a certain direction (being called the Y direction), make the inswept whole mask plate 10 of light beam, and project on the photoresist of substrate, simultaneously, substrate need be moved along the opposite direction with mask plate 10 moving directions with certain speed, could be with the design transfer of whole mask plate 10 to the photoresist of substrate.
With the scanning type exposure is example, finish single pass after, on the photoresist layer of substrate, be formed at the pattern (being called a Shot or Field) of whole mask plate correspondence; Then the photoresist layer to other position of substrate carries out scanning type exposure, forms a plurality of Shot.Wherein overlay mark is formed at the zone between two adjacent shot, promptly on the Cutting Road.Please refer to synoptic diagram shown in Figure 3.Have overlay mark 22a and 22b at two adjacent shot 20a and the zone between the 20b, wherein, overlay mark 22a forms when shot 20a forms, and overlay mark 22b forms when shot 20b forms.
After in suprabasil photoresist layer, forming described pattern, postexposure bake (Post Exposure Bake, PEB) technology are carried out in described substrate.By PEB, the standing wave effect (mainly for the I-Line photoresist) when eliminating exposure on the one hand; Cause on the other hand, quicken the catalytic reaction (mainly for chemically-amplified resist) of light acid, make the photoresist that is exposed generate the material that dissolves in developer solution.
After finishing PEB, described photoresist layer is developed,, remove the photoresist in the zone that is exposed, wash with deionized water then for the eurymeric photoresist with developer solution.
After development and the flushing, hard roasting (Hard Bake) technology is carried out in described substrate, with the adhesiveness of raising test pattern to substrate.
Then, as mask, carry out etching technics, the design transfer in the described photoresist layer to substrate, is formed the pattern and the overlay mark pattern of product in described substrate with the pattern in the described photoresist layer.
After etching, the described pattern of the product in the mask plate has together been transferred in the substrate together with the overlay mark of this layer.
Then, carry out photoetching process once more, next layer pattern of this layer of product is transferred in the photoresist layer of this substrate by the step identical with above-mentioned technology, its detailed process is as follows:
Other mask plate is provided, and this mask plate has the pattern and the overlay mark of other one deck, please refer to Fig. 4, as shown in Figure 4, has area of the pattern 42 on the mask plate 40, and this area of the pattern 42 is measure-alike with the area of the pattern 12 of Fig. 1, is positioned at corresponding.Be placed with overlay mark 44 in the periphery of described area of the pattern 42 and the overlay mark 14 corresponding positions of Fig. 1, wherein, the size of described overlay mark 44 is identical with the overlay mark of Fig. 1 14 shapes, but the size difference.Wherein the overlay mark 44 of this layer is test pattern.
Then, spin coating photoresist layer once more in above-mentioned substrate, and the utilization step identical with above-mentioned photoetching process, carry out photoetching process once more, pattern in the mask plate 40 (comprising product pattern and overlay mark 44) is transferred in the photoresist layer, in described photoresist layer, form product pattern and overlay mark pattern, wherein existing overlay mark pattern alignment is together in this overlay mark pattern and the substrate, please refer to shown in Figure 5, shot 40a and 40b are the area of the pattern of the product of this time formation, and the regional overlay mark 42a between described shot 40a and 40b and the overlay mark 22a of 42b and anterior layer are in the same place with the 22b alignment.Fig. 6 is the enlarged drawing of one of them overlay mark of Fig. 5, please refer to shown in Figure 6ly, and overlay mark 22b and 42b are nested together.In when design, the distance of the corresponding lines among overlay mark 22b and the 42b all is the same on four limits, that is to say that the center between overlay mark 22b and the 42b overlaps.
In the alignment of normal product is measured,, can judge the accurate degree of both sides overlay up and down by measuring the relative displacement of overlay mark 22b and 42b.That is to say that in existing processes, overlay mark only is used for the accurate degree detecting of levels alignment.
Yet in photoetching process, if the focal length of exposure sources changes, the profile that can cause being formed at the overlay mark pattern in the photoresist layer changes, and then causes the center of bilevel overlay mark pattern no longer to overlap, but certain skew is arranged.By measuring this skew, judge whether this skew equals desired value (for example, being 0 in the present embodiment), can know that lithographic equipment focuses on situation.If described side-play amount is not equal to desired value, the focus offset pinpointed focus of face exposure equipment, can judge further whether this side-play amount exceeds threshold range (this threshold range be exposure sources scope that can tolerate, that depart from the side-play amount of the pairing overlay mark of pinpointed focus ultimate range), if exceed threshold range, then need to stop exposure sources work, exposure sources is done further detection.
In addition, can also obtain the real focal length of exposure sources according to the corresponding relation of described side-play amount and exposure equipment focal distance.Here repeat no more.
Wherein, can adopt the overlay mark measuring equipment to measure described side-play amount.The measurement that the method for measuring is carved precision for the alignment copper sheathing is not described in detail here.
In the above embodiments,, and, whether change, can know whether this exposure sources is operated under the optimum exposure focal length state to judge side-play amount and its desired value in the desired value contrast by the side-play amount of the overlay mark of both sides about the measurement.Described method needn't be carried out under the exposure sources off-line state, and test badge and reference mark can be formed at the periphery of the mask plate with product pattern, carries out simultaneously with the lithography step of product, can not take the time of exposure sources separately.And processing step is simple, needn't only get final product by one-shot measurement and with this measured value and desired value comparison through repeatedly measurements and calculations.
Above-mentioned method is that the example explanation is of the present invention with overlay mark as reference mark and test badge; it should be as the restriction to the claim protection domain; under the condition of the protection domain that does not deviate from claim, those skilled in the art's instruction according to the abovementioned embodiments of the present invention can be to the interpolation of the step of the above embodiments, remove, be equal to and replace or the change of order.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (6)
1, a kind of method of exposure equipment focal distance monitoring is characterized in that, comprising:
Mask plate with reference mark is provided, by photoetching process and etching technics, with described reference mark transfer to substrate on, in described substrate, form the reference mark pattern;
Mask plate with test badge is provided;
In substrate, form photoresist layer, utilize described exposure sources to carry out photoetching process, described test badge is transferred in the described photoresist layer, form the test badge pattern with described reference mark pattern;
Measure the side-play amount of described test badge pattern and reference mark pattern;
If described side-play amount is not equal to desired value, then described exposure sources departs from optimum exposure position.
2, the monitoring method of exposure equipment focal distance as claimed in claim 1 is characterized in that, further comprises: judge whether described side-play amount exceeds the threshold range of desired value, if then need to stop exposure sources work.
3, the monitoring method of exposure equipment focal distance as claimed in claim 1 or 2 is characterized in that, further comprises: according to the corresponding relation of described side-play amount and exposure equipment focal distance, obtain the real focal length of exposure sources.
4, the monitoring method of exposure equipment focal distance as claimed in claim 1 or 2 is characterized in that: described reference mark and test badge are overlay mark.
5, the monitoring method of exposure equipment focal distance as claimed in claim 4 is characterized in that: described reference mark and test badge are formed on the Cutting Road of the periphery with device pattern.
6, the monitoring method of exposure equipment focal distance as claimed in claim 4 is characterized in that: measure described side-play amount by the alignment measuring equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101136889A CN101592869B (en) | 2008-05-29 | 2008-05-29 | Exposure equipment focal distance monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101136889A CN101592869B (en) | 2008-05-29 | 2008-05-29 | Exposure equipment focal distance monitoring method |
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| CN101592869A true CN101592869A (en) | 2009-12-02 |
| CN101592869B CN101592869B (en) | 2012-05-16 |
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| CN2008101136889A Expired - Fee Related CN101592869B (en) | 2008-05-29 | 2008-05-29 | Exposure equipment focal distance monitoring method |
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| CN102262350A (en) * | 2010-05-25 | 2011-11-30 | 旺宏电子股份有限公司 | Verification method of exposure program of exposure machine and mask used therewith |
| CN102375330A (en) * | 2010-08-19 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Method and device for determining optimum focus of exposure equipment |
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| CN111508825B (en) * | 2020-04-29 | 2021-07-30 | 长江存储科技有限责任公司 | Device offset monitoring method, semiconductor device and manufacturing method thereof |
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| CN117410276A (en) * | 2023-12-12 | 2024-01-16 | 合肥晶合集成电路股份有限公司 | Optical measuring structure of semiconductor device and measuring method thereof |
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