CN109212919A - A kind of photoresist and its preparation method and application and photolithography method - Google Patents
A kind of photoresist and its preparation method and application and photolithography method Download PDFInfo
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- CN109212919A CN109212919A CN201811265920.0A CN201811265920A CN109212919A CN 109212919 A CN109212919 A CN 109212919A CN 201811265920 A CN201811265920 A CN 201811265920A CN 109212919 A CN109212919 A CN 109212919A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
The invention belongs to semiconductor and integrated circuit fields, a kind of photoresist and its preparation method and application and photolithography method are disclosed.The photoresist contains resin and photo-acid generator, the resin is copolymerized by the unit cell I, the unit cell of 35-65wt% II, the unit cell of 10-30wt% III of 20-45wt%, and the structure of the unit cell I, unit cell II and unit cell III is respectively as shown in formula (1), formula (2) and formula (3).Photoresist provided by the invention can be improved the adhesiveness of photoresist and substrate surface, and accelerates the rate of photoresist exposure, reduces photoetching reaction energy, the rate that reduction photoresist is etched or continue the probability to react when reducing development, it realizes between photoresist and substrate surface without cavity or notch, it still is able to be fully developed after being filled into zanjon trench bottom, substrate patterned surface is still photo-etched glue and is completely covered.
Description
Technical field
The invention belongs to semiconductor and integrated circuit fields, and in particular to a kind of photoresist and its preparation method and application with
And photolithography method.
Background technique
In previous technology, if it is desired to improving the unit sizes storage density of nand flash memory, production must be just improved
Process.The cell density and data capacity under prior art processing procedure are improved using 3D memory cell array now, simultaneously
The kernel size (Die Size) of chip is almost without increase.In new stacked architecture, pillar made of electrode material will hang down
The straight memory element for running through multiple-level stack, and the peripheral circuit that can be shared.
It is perforated in stack layer (i.e. in the gate electrode of multilayer and insulating film) using etching technique, pillar will make to deposit
Technique fills this some holes, is covered with gate circuit around pillar.Preformed nitride film is distributed in each for keeping data
Joint is functionally similar to the storage unit of NAND.
This technique needs to dig from top to bottom 4-6 μm of deep trench, and photoresist is firstly the need of the zanjon for filling 4-6 μm
Slot, photolithographic exposure development need the photoresist inside development deep trench completely.Secondly the surface wafer substrate (substrate) not
The photoresist for needing to develop needs to stop etching.
For this technique, current common photoresist has three major issues.One is the adhesiveness of photoresist and substrate surface
It is bad, cause the place of photoetching offset plate figure bottom and substrate surface contact cavity or notch occur.After two is filling deep trench, because
For light transmittance is inadequate or the sour reaction of light is not complete enough, cause zanjon trench bottom photoresist cannot sufficiently it is developed fall, residual
Photoresist stop etching.Three for photoresist do not stop enough it is deep plough groove etched.
Summary of the invention
The present invention is intended to provide a kind of new photoresist and its preparation method and application and photolithography method.
The present invention provides photoresists, wherein the photoresist contains resin and photo-acid generator, and the resin is by 20-
Unit cell I, the unit cell of 35-65wt% II, the unit cell of 10-30wt% III of 45wt% is copolymerized, the list
The structure of first monomer I, unit cell II and unit cell III is respectively as shown in formula (1), formula (2) and formula (3)；
R1And R2For acid-unstable group, and any one being each independently selected from following structural serial (4):
R3For hydrogen or methyl；R4For C5-C12Cyclic alkyl, structure is selected from any in following structural serial (5)
It is a kind of:
X be hydrogen, methyl or ethyl, structural formula series (4) and structural formula series (5) inIt indicates and main body knot
The connecting key of oxygen in structure.
The alkyl group of hexafluoro containing polarized enhances the adhesiveness of photoresist and substrate in the unit cell I；The list
First monomer II, which sloughs protecting group in the presence of photo-acid generator, becomes 4-Vinyl phenol, can be improved in alkaline-based developer
Dissolubility；The unit cell III contains high C/Hratio side group, improves the anti-etching ability of photoresist.
The resin is the above copolymer of ternary (that is, including terpolymer and more multiple copolymer, wherein work as institute
State resin be terpolymer when, unit cell I, unit cell II and unit cell III are only with one kind；When the resin
When for more multiple copolymer, at least one of unit cell I, unit cell II and unit cell III use two different lists
Body), weight average molecular weight 3000-20000, molecular weight distribution 1.2-2.5.
Preferably, R1For aliphatic radical in hexamethylene, R2For tertbutyloxycarbonyl, R3For methyl, R4For adamantyl.Preferably, with institute
On the basis of the total weight for stating photoresist, the content of the resin is 12-40wt%, and the content of the photo-acid generator is 0.5-
10wt%.Preferably, the photo-acid generator be ionic photo-acid generator and/or non-ionic photo-acid generator, it is described from
Subtype photo-acid generator is salt compounded of iodine and/or sulfosalt, and the non-ionic photo-acid generator is selected from organohalogen compound, again
At least one of nitrogen sulfone and imines sulphonic acid ester.
Preferably, additive and/or solvent are also contained in the photoresist.
Preferably, on the basis of the total weight of the photoresist, the content of the resin is 14-35wt%, described photic
The content of acid agent is 0.6-6wt%, and the total content of the additive and solvent is 60-85wt%.
Preferably, the additive is in levelling agent, plasticizer, organic base, solution rate reinforcing agent and photosensitizer
At least one, the solvent are selected from cyclohexanone, diacetone alcohol, ethyl acetate, glycol monoethyl ether, ethylene glycol monomethyl ether acetate
At least one of with dipropylene glycol monomethyl ether.
The preparation method of the photoresist provided by the invention includes by the resin, photo-acid generator and optional adding
Agent and solvent is added to be uniformly mixed, the second mistake that the first filter and aperture for being successively then 20-50nm with aperture are 2-20nm
Filter filtering, the aperture of the first filter are greater than the aperture of second filter.
The present invention also provides application of the above-mentioned photoresist in photoetching.
Photolithography method provided by the invention includes:
HMDS deposition: in the HMDS cavity of sol evenning machine, gaseous state HMDS (hmds) is deposited into wafer substrate
Surface；
It is cooling: the cold plate cavity of the sol evenning machine is cooled to room temperature；
Spin coating: above-mentioned photoresist is coated in the wafer substrate surface that deposited HMDS in the sol evenning machine to be formed
Photoresist layer；
Baking: it is toasted 80-150 seconds at 120-150 DEG C in the hot plate cavity of the sol evenning machine；
It is cooling: to be cooled to room temperature in the cold plate cavity of the sol evenning machine；
Exposure: with photo-etching machine exposal with will be on the graph copying on mask plate to the photoresist layer；
Baking: it is toasted 90-130 seconds at 90-120 DEG C in the hot plate cavity of the sol evenning machine；
Development: the photoresist after exposure is developed and is rinsed completely with developing machine.
Preferably, the mode for coating the photoresist is spin coating.
Preferably, the photoresist layer with a thickness of 5 μm or more, preferably 5-16 μm.
Preferably, the wavelength of the exposure machine is 248nm.
Photoresist provided by the invention mainly passes through the component for changing resin, by unit cell I, unit cell II and list
First monomer III is used cooperatively, and to improve the adhesiveness of photoresist and substrate surface, and is accelerated the rate of photoresist exposure, is reduced light
It carves reaction energy, the rate that reduction photoresist is etched or continues the probability to react when reducing development, realize photoresist
Without cavity or notch between substrate surface, it still is able to be fully developed after being filled into zanjon trench bottom, substrate figure table
Face is still photo-etched glue and is completely covered.
Detailed description of the invention
The reference photoresist DJ1 that Fig. 1 is the photoresist J1 obtained using embodiment 1 and comparative example 1 obtains is surveyed in adhesiveness
Try the microscope photographing figure of correspondence figure；
Fig. 2 is photoresist J1 scanning electron microscope result corresponding after exposure development, wherein Fig. 2A and Fig. 2 B
For different camera sites and shooting angle；
Fig. 3 be photoresist J1 and reference photoresist DJ1 after the etch corresponding scanning electron microscope as a result, its
In, Fig. 3 A is that photoresist J1 is corresponding as a result, Fig. 3 B is the corresponding result of photoresist DJ1.
Specific embodiment
The embodiment of the present invention is described below in detail, the examples of the embodiments are intended to be used to explain the present invention, and cannot
It is interpreted as limitation of the present invention.In the examples where no specific technique or condition is specified, described according to the literature in the art
Technology or conditions or carried out according to product description.Reagents or instruments used without specified manufacturer is that can lead to
Cross the conventional products of commercially available acquisition.
Embodiment 1
The embodiment is used to illustrate the preparation method of ternary polymerization photoetching gum resin provided by the invention.
The resin as comonomer existing for the radical initiator under the conditions of, carry out copolyreaction preparation in solvent and
At copolymer, the comonomer is made of the compound of following parts by weight: I 28.6g of monomer, II 50.0g of monomer, monomer
Ⅲ22.4g.Polymerization reaction formula is as follows:
Preparation method: in the three-necked flask of 500ml be added I 28.6g of monomer, II 50.0g of monomer, III 22.4g of monomer with
And tetrahydrofuran 250g, lead under agitation nitrogen ten minutes, is then heated to dropwise addition 54.0g azo in 65 DEG C, 10 minutes
Two isobutyl cyanogen solution (4 grams of azo-bis-isobutyl cyanides are dissolved in 50 grams of tetrahydrofurans), after the reaction was continued 6 hours, reaction product remove-insurance
Shield, obtains final product, weight average molecular weight 28200, molecular weight distribution 2.1.
Embodiment 2
The embodiment is used to illustrate the preparation method of ternary polymerization photoetching gum resin provided by the invention.
The resin as comonomer existing for the radical initiator under the conditions of, carry out copolyreaction preparation in solvent and
At copolymer, the comonomer is made of the compound of following parts by weight: I 28.5g of monomer, II 58.0g of monomer, monomer
Ⅲ13.5g.Polymerization reaction formula is as follows:
Preparation method: I 28.5g of monomer, II 58.0g of monomer, monomer III 13.5g and four in the three-necked flask of 500ml
Hydrogen furans 250g leads to nitrogen ten minutes under agitation, and it is different to be then heated to dropwise addition 54.0g azo two in 60 DEG C, 10 minutes
Fourth cyanogen solution (4 grams of azo-bis-isobutyl cyanides are dissolved in 50 grams of tetrahydrofurans), after the reaction was continued 20 hours, reaction product deprotection,
Obtain final product, weight average molecular weight 25400, molecular weight distribution 1.9.
Embodiment 3
The embodiment is used to illustrate the preparation method of quarternary copolymerized photoetching gum resin provided by the invention.
The resin as comonomer existing for the radical initiator under the conditions of, carry out copolyreaction preparation in solvent and
At copolymer, the comonomer is made of the compound of following parts by weight: I 35.5g of monomer, II 40.0g of monomer, monomer
III (has structure shown in formula (3), wherein R3For methyl, R4ForX is hydrogen) 12.0g, monomer III (have formula (3)
Shown in structure, wherein R3 is methyl, R4ForX is methyl) 12.5g.Polymerization reaction formula is as follows:
Preparation method: I 35.5g of monomer, II 40.0g of monomer, III 12.0g of monomer, list are added in the three-necked flask of 500ml
Body III 12.5g and tetrahydrofuran 250g lead to nitrogen ten minutes under agitation, are then heated to 70 DEG C, drip in 10 minutes
Add 54.0g azo-bis-isobutyl cyanide solution (4 grams of azo-bis-isobutyl cyanides are dissolved in 50 grams of tetrahydrofurans), after the reaction was continued 12 hours,
Reaction product deprotection, obtains final product, weight average molecular weight 13300, molecular weight distribution 2.5.
Embodiment 4 is to embodiment 6: the preparation of photoresist
(1) resin
The resin that the synthesis of embodiment one to three is respectively adopted to six in example IV.
(2) photo-acid generator
4: three p-trifluoromethyl phenyl sulfosalt of embodiment, coordination anion are perfluoro butyl sulfonic group, and structural formula is such as
(6)；
5: three p-methylphenyl sulfosalt of embodiment, coordination anion are naphthalene sulfonic acids base, structural formula such as (7)；
6: two pairs of tert-butyl-phenyl salt compounded of iodine of embodiment, coordination anion are trifluoromethyl sulfonic acid, structural formula such as (8).
(3) organic base
Embodiment 4: triethanolamine；
Embodiment 5: three (methoxy ethyl) amine；
Embodiment 6: tripropyl amine (TPA).
(4) solvent
Embodiment 4: diacetone alcohol；
Embodiment 5: glycol monoethyl ether；
Embodiment 6: ethylene glycol monomethyl ether acetate.
(5) preparation of photoresist
Clean plastic containers (250 are added according to the proportion of table 1 in the above resin, photo-acid generator, organic base and solvent
Milliliter Polypropylene bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that
Each component sufficiently dissolves, the second filter filtering that the first filter and aperture for being successively then 30nm with aperture are 8nm, point
Photoresist J1-J3 is not obtained.
Table 1
| Project | Film-forming resin (wt%) | Photo-acid generator (wt%) | Organic base (wt%) | Solvent (wt%) |
| Embodiment 4 | 15 | 0.6 | 0.5 | 83.9 |
| Embodiment 5 | 25 | 2 | 0.5 | 72.5 |
| Embodiment 6 | 35 | 6 | 0.6 | 58.4 |
Comparative example 1
The comparative example is for illustrating photoresist of reference and preparation method thereof.
Photoresist is prepared according to the method for embodiment 1, unlike, by the unit cell I using identical weight part
Unit cell II substitutes, and obtains reference photoresist DJ1.
Comparative example 2
The comparative example is for illustrating photoresist of reference and preparation method thereof.
Photoresist is prepared according to the method for embodiment 1, unlike, by the unit cell I using identical weight part
Unit cell III substitutes, and obtains reference photoresist DJ2.
Comparative example 3
The comparative example is for illustrating photoresist of reference and preparation method thereof.
Photoresist is prepared according to the method for embodiment 1, unlike, by the unit cell III using identical weight part
Unit cell II substitutes, and obtains reference photoresist DJ3.
Test case
(1) adhesiveness:
Step 1: it on the test die, is coated respectively by the obtained photoresist J1-J3 of embodiment 1-3 and reference photoetching
Glue DJ1-DJ3 is to form the photoresist layer with a thickness of 8 μm, and exposure development goes out to test figure under identical condition later, with aobvious
Micro mirror shoots figure photos.
Step 2: it is sticked to the litho pattern surface that step (1) obtains with 610 adhesive tape of 3M respectively, gently smoothes out, then tears
Fall, with microscope photographing figure photos.
The result shows that after tearing, all glued by adhesive tape using the figure of reference photoresist DJ1-DJ3, and uses photoresist
The figure of J1-J3 is not glued.Wherein, using photoresist J1 and reference photoresist DJ1 in adhesion test correspondence figure
Microscope photographing figure as shown in Figure 1, it will be seen from figure 1 that adhesive tape adherency before, using photoresist J1 and reference photoresist
The figure of DJ1 is all intact, but after adhesive tape adherency, is not glued using the figure of photoresist J1, and uses reference
The figure of photoresist DJ1 has had part to be glued by adhesive tape.It can be seen that photoresist J1-J3 provided by the invention and wafer
Adhesiveness is stronger than reference photoresist DJ1-DJ3.
(2) filling development and etching:
1. coating the photoetching of 8um thickness respectively with ACT-8 sol evenning machine on test wafer substrate figure (6 μm of trench depth)
Glue J1-J3 and reference photoresist DJ1-DJ3, with ASML 700D expose, with ACT-8 develop out critical size (line width) be 4 μm
Experiment figure, whether have photoetching glue residua with scanning electronic microscope examination substrate figure channel bottom.The result shows that not
Light-exposed photoresist residual.Wherein, when checking figure bottom, result such as Fig. 2 of scanning electron microscope corresponding to photoresist J1
It is shown, wherein Fig. 2A and Fig. 2 B is different camera sites and shooting angle.Figure it is seen that figure bottom is absolutely not residual
Stay photoresist.
2. step 1: on test wafer substrate figure, coating the photoresist J1-J3 of 8 μ m-thicks respectively with ACT-8 sol evenning machine
And reference photoresist DJ1-DJ3, it is exposed with ASML 700D, is developed the experiment figure that critical size out is 4 μm with ACT-8.
Step 2: being put into LAM EXELAN HPT etching machine bench for testing piece and perform etching, process conditions: 60Mt/
1000W/500W/45CF4/180Ar/10O2Etching 60 seconds, with scanning electronic microscope examination patterned surface.
Experimental result: after etching, photoresist J1-J3 can also fully cover figure, and reference photoresist DJ1-DJ2
It is etched away.Wherein, photoresist J1 (Fig. 3 A) and the corresponding result of reference photoresist DJ1 (Fig. 3 B) are as shown in figure 3, can from Fig. 3
To find out, photoresist J1 is also intact to cover figure, and reference photoresist is etched, it can be seen that is originally covered by photoresist
Figure.
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above
Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this
A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (10)
1. a kind of photoresist, which is characterized in that the photoresist contains resin and photo-acid generator, and the resin is by 20-
Unit cell I, the unit cell of 35-65wt% II, the unit cell of 10-30wt% III of 45wt% is copolymerized, the list
The structure of first monomer I, unit cell II and unit cell III is respectively as shown in formula (1), formula (2) and formula (3)；
R1And R2For acid-unstable group, and any one being each independently selected from following structural serial (4)；
R3For hydrogen or methyl；R4For C5-C12Cyclic alkyl, structure is selected from any one in following structural serial (5)
Kind:
X be hydrogen, methyl or ethyl, structural formula series (4) and structural formula series (5) inIn expression and main structure
The connecting key of oxygen.
2. photoresist according to claim 1, which is characterized in that the resin is the above copolymer of ternary.
3. photoresist according to claim 1, which is characterized in that R1For aliphatic radical in hexamethylene, R2For tertbutyloxycarbonyl, R3For
Methyl, R4For adamantyl.
4. photoresist described in any one of -3 according to claim 1, which is characterized in that the weight average molecular weight of the resin is
3000-20000, molecular weight distribution 1.2-2.5.
5. photoresist described in any one of -3 according to claim 1, which is characterized in that the total weight with the photoresist is
Benchmark, the content of the resin are 12-40wt%, and the content of the photo-acid generator is 0.5-10wt%；
Preferably, the photo-acid generator is ionic photo-acid generator and/or non-ionic photo-acid generator, the ionic
Photo-acid generator is salt compounded of iodine and/or sulfosalt, and the non-ionic photo-acid generator is selected from organohalogen compound, diazonium sulfone
At least one of with imines sulphonic acid ester.
6. photoresist described in any one of -3 according to claim 1, which is characterized in that also containing addition in the photoresist
Agent and/or solvent；Preferably, on the basis of the total weight of the photoresist, the content of the resin is 14-35wt%, described
The content of photo-acid generator is 0.6-6wt%, and the total content of the additive and solvent is 60-85wt%；Preferably, described to add
Agent is added to be selected from least one of levelling agent, plasticizer, organic base, solution rate reinforcing agent and photosensitizer, the solvent is selected from
In cyclohexanone, diacetone alcohol, ethyl acetate, glycol monoethyl ether, ethylene glycol monomethyl ether acetate and dipropylene glycol monomethyl ether
It is at least one.
7. the preparation method of photoresist described in any one of claim 1-6, which is characterized in that this method includes will be described
Resin, photo-acid generator and optional additive and solvent are uniformly mixed, then successively with the first mistake that aperture is 20-50nm
The second filter that filter and aperture are 2-20nm filters, and the aperture of the first filter is greater than the hole of second filter
Diameter.
8. application of the photoresist in photoetching described in any one of claim 1-6.
9. a kind of photolithography method, which is characterized in that this method comprises:
HMDS deposition: in the HMDS cavity of sol evenning machine, gaseous state HMDS is deposited into wafer substrate surface；
It is cooling: the cold plate cavity of the sol evenning machine is cooled to room temperature；
Spin coating: photoresist described in any one of claim 1-7, which is coated in the sol evenning machine, deposited HMDS
Wafer substrate surface to form photoresist layer；
Baking: it is toasted 80-150 seconds at 120-150 DEG C in the hot plate cavity of the sol evenning machine；
It is cooling: to be cooled to room temperature in the cold plate cavity of the sol evenning machine；
Exposure: with photo-etching machine exposal with will be on the graph copying on mask plate to the photoresist layer；
Baking: it is toasted 90-130 seconds at 90-120 DEG C in the hot plate cavity of the sol evenning machine；
Development: the photoresist after exposure is developed and is rinsed completely with developing machine.
10. photolithography method according to claim 9, which is characterized in that the mode for coating the photoresist is spin coating；It is preferred that
Ground, the photoresist layer with a thickness of 5 μm or more, preferably 5-16 μm；The wavelength of the exposure machine is 248nm.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4207261A1 (en) * | 1992-03-07 | 1993-09-09 | Hoechst Ag | Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists |
| US20020155376A1 (en) * | 2000-09-11 | 2002-10-24 | Kazuhiko Hashimoto | Positive resist composition |
| CN101592869A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Exposure equipment focal distance monitoring method |
| CN105566552A (en) * | 2016-03-04 | 2016-05-11 | 江南大学 | Acrylate copolymer and 248nm photoresist composition made thereof |
| CN107325218A (en) * | 2017-06-22 | 2017-11-07 | 苏州瑞红电子化学品有限公司 | A kind of fluorostyrenic monomers, fluorinated copolymer and the application in 248nm deep ultraviolet light-sensitive lacquers |
-
2018
- 2018-10-29 CN CN201811265920.0A patent/CN109212919B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4207261A1 (en) * | 1992-03-07 | 1993-09-09 | Hoechst Ag | Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists |
| US20020155376A1 (en) * | 2000-09-11 | 2002-10-24 | Kazuhiko Hashimoto | Positive resist composition |
| CN101592869A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Exposure equipment focal distance monitoring method |
| CN105566552A (en) * | 2016-03-04 | 2016-05-11 | 江南大学 | Acrylate copolymer and 248nm photoresist composition made thereof |
| CN107325218A (en) * | 2017-06-22 | 2017-11-07 | 苏州瑞红电子化学品有限公司 | A kind of fluorostyrenic monomers, fluorinated copolymer and the application in 248nm deep ultraviolet light-sensitive lacquers |
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| CN109212919B (en) | 2022-02-08 |
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