CN102566315A - Method for detecting offset of focus of lithography machine - Google Patents
Method for detecting offset of focus of lithography machine Download PDFInfo
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- CN102566315A CN102566315A CN2012100149905A CN201210014990A CN102566315A CN 102566315 A CN102566315 A CN 102566315A CN 2012100149905 A CN2012100149905 A CN 2012100149905A CN 201210014990 A CN201210014990 A CN 201210014990A CN 102566315 A CN102566315 A CN 102566315A
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Abstract
The invention relates to the field of semiconductor manufacturing, in particular to a method for detecting offset of focus of a lithography machine. According to the method for detecting the offset of the focus of the lithography machine, the offset of the focus of the lithography machine is monitored by depending on monitoring the similarity level of an actual measurement graph and a reference graph, the change condition of the focus of the lithography machine can be immediately and effectively judged through measuring massively-produced wafers, and measurement interference can be avoided, thus judgment errors caused by the measurement errors are avoided.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) and manufacturing field thereof, relate in particular to a kind of method that detects the litho machine focus offset.
Background technology
Along with the integrated level of integrated circuit improves constantly, the develop rapidly that semiconductor technology also continues.Improve constantly along with what semiconducting behavior required, the size of IC chip is also more and more littler, and photoetching process becomes the operation of core in the chip manufacturing gradually.Usually in a complete chip manufacturing process, need carry out repeatedly photo-mask process, as in 45 complete nanometer technology chip manufacturing process, the difference of looking performance requirement approximately needs 40 to 60 photo-mask processs; And along with the dwindling of device size, the figure of photoetching is also corresponding constantly to be dwindled, and the size after the thickness of photoresistance and photoetching are accomplished is also more and more littler; When chip production technology during from state-of-the-art up till now 15 nanometer technologies of micron order; The employed wavelength of photoetching also constantly dwindles in the progress along with chip technology; From the I of mercury, 193nm ultraviolet ray, extreme ultraviolet line EUV and even the electron beam that the G anchor line (string) develops into ultraviolet region, i.e. photoetching has become a precision processing technology.
In photoetching process,, will bring tremendous loss to production if the litho machine focal length can not in time come to light when skew takes place; Existing technology mainly adopts the method for measuring critical size or measuring alignment precision to monitor; But all need special exposure one wafer to monitor the situation of board; And measure simultaneously critical size to the requirement that measures the position than higher; When the measurement position changes, can bring very big interference to net result.
Summary of the invention
The invention discloses a kind of method that detects the litho machine focus offset, when the litho machine operate as normal, wherein, may further comprise the steps:
Step S1: the reference wafer that makes public set up the measurement formula of one scan electron microscope according to the figure on the reference wafer after this exposure, and the figure that is provided with on this exposure back reference wafer is a reference pattern;
Step S2: conditions of exposure is set changes along with the litho machine focal length variations, the exposure test wafer, and the figure that is provided with on the test wafer after this exposure is a measurement pattern;
Step S3: through above-mentioned measurement formula, set up the similarity score value of measurement pattern and reference pattern and the relation curve between the litho machine focal length, and confirm similarity score value as alarm points;
Step S4: the similarity score value of alarm points is inputed to the measurement formula, and utilize this measurement formula to carry out the detection of litho machine focus offset in the subsequent optical carving technology.
The method of above-mentioned detection litho machine focus offset; Wherein, Also comprise among the step S4, adopt scanning electron microscope to carry out the detection of litho machine focus offset in the subsequent optical carving technology, figure and the reference pattern similarity score value on the test wafer is higher than alarm points after the exposure when detecting; Then the litho machine focal length is normal, continues the subsequent optical carving technology; Otherwise, then trigger alarm, stop current technology.
The method of above-mentioned detection litho machine focus offset, wherein, scanning electron microscope is being done the measurement that can also carry out the similarity score value of measurement pattern and reference pattern when figure measures.
The method of above-mentioned detection litho machine focus offset, wherein, the similarity score value is high more, and measurement pattern and reference pattern similarity are high more.
The method of above-mentioned detection litho machine focus offset, wherein, according to the similarity score value of actual process requirements set as alarm points.
In sum; Owing to adopted technique scheme; The present invention proposes a kind of method that detects the litho machine focus offset; Thereby through relying on the skew of monitoring actual amount mapping shape and reference pattern similarity degree monitoring photoetching mechanical coke distance, not only can judge the situation of change of photoetching equipment focal length through the wafer that measures volume production timely and effectively, disturbed the error in judgement of avoiding it to bring thereby can also not measure.
Description of drawings
Fig. 1 is the structural representation that the present invention detects reference pattern in the method for litho machine focus offset;
Fig. 2 is structure and the similarity score value synoptic diagram that the present invention detects resolution chart in the method for litho machine focus offset;
Fig. 3 is that the present invention detects the graph of relation between the similarity score value and litho machine focal length in the method for litho machine focus offset;
Fig. 4 is the present invention's figure and similarity score value synoptic diagram thereof on the wafer of exposure back when detecting actual process in the method for litho machine focus offset.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 1 is the structural representation that the present invention detects reference pattern in the method for litho machine focus offset; Fig. 2 is the structural representation that the present invention detects resolution chart in the method for litho machine focus offset; Fig. 3 is that the present invention detects the graph of relation between the similarity score value and litho machine focal length in the method for litho machine focus offset; Fig. 4 is the present invention's figure and similarity score value synoptic diagram thereof on the wafer of exposure back when detecting actual process in the method for litho machine focus offset.
Shown in Fig. 1-4, a kind of method that detects the litho machine focus offset of the present invention, under the situation of litho machine operate as normal:
At first, the wafer of making public adopts scanning electron microscope to measure, and sets up the measurement formula of this scanning electron microscope according to the figure on the wafer of exposure back, be provided with simultaneously this exposure afterwards the figure on wafer be reference pattern 1.Wherein, this scanning electron microscope is being done the measurement that can also carry out the similarity score value of measurement pattern and reference pattern when figure measures.
Then, the conditions of exposure that litho machine is set changes along with the litho machine focal length variations, the exposure test wafer, and the figure that is provided with on the test wafer after this exposure is a measurement pattern 2; And according to above-mentioned measurement formula; Measure the similarity score value 21 of measurement pattern 2 and reference pattern 1; To set up between similarity score value 21 and the litho machine focal length relation curve as shown in Figure 3; And be alarm points according to the actual process requirements set as the similarity score value 730 of alarm points, promptly as shown in Figure 3 dotted line is above is normal similarity score value, when the similarity score value is lower than dotted line, then goes out activating alarm.
At last, the similarity score value 730 of alarm points inputed to measure in the formula, and utilize this measurement formula to carry out the detection of litho machine focus offset in the subsequent optical carving technology; When figure on detecting exposure back wafer and reference pattern similarity score value are higher than alarm points 730; As shown in Figure 4, the similarity score value in the unit 41 is 910, greater than the alarm point value; The normal of litho machine focal length then is described, can be continued the subsequent optical carving technology; Otherwise as shown in Figure 4, the unit similarity score value of other except that unit 41 all is lower than the similarity score value 730 of alarm points, and then skew appears in explanation litho machine focal length this moment, triggers alarm, stops current technology.
In sum; Owing to adopted technique scheme; The present invention proposes a kind of method that detects the litho machine focus offset; Thereby through relying on the skew of monitoring actual amount mapping shape and reference pattern similarity degree monitoring photoetching mechanical coke distance, not only can judge the situation of change of photoetching equipment focal length through the wafer that measures volume production timely and effectively, disturbed the error in judgement of avoiding it to bring thereby can also not measure.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (5)
1. a method that detects the litho machine focus offset when the litho machine operate as normal, is characterized in that, may further comprise the steps:
Step S1: the reference wafer that makes public set up the measurement formula of one scan electron microscope according to the figure on the reference wafer after this exposure, and the figure that is provided with on this exposure back reference wafer is a reference pattern;
Step S2: conditions of exposure is set changes along with the litho machine focal length variations, the exposure test wafer, and the figure that is provided with on the test wafer after this exposure is a measurement pattern;
Step S3: through above-mentioned measurement formula, set up the similarity score value of measurement pattern and reference pattern and the relation curve between the litho machine focal length, and confirm similarity score value as alarm points;
Step S4: the similarity score value of alarm points is inputed to the measurement formula, and utilize this measurement formula to carry out the detection of litho machine focus offset in the subsequent optical carving technology.
2. the method for detection litho machine focus offset according to claim 1; It is characterized in that; Also comprise among the step S4, adopt scanning electron microscope to carry out the detection of litho machine focus offset in the subsequent optical carving technology, figure and the reference pattern similarity score value on the wafer is higher than alarm points after the exposure when detecting; Then the litho machine focal length is normal, continues the subsequent optical carving technology; Otherwise, then trigger alarm, stop current technology.
3. the method for detection litho machine focus offset according to claim 1 and 2 is characterized in that, scanning electron microscope is being done the measurement that can also carry out the similarity score value of measurement pattern and reference pattern when figure measures.
4. the method for detection litho machine focus offset according to claim 1 and 2 is characterized in that the similarity score value is high more, and measurement pattern and reference pattern similarity are high more.
5. the method for detection litho machine focus offset according to claim 1 is characterized in that, according to the similarity score value of actual process requirements set as alarm points.
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| CN201210014990.5A CN102566315B (en) | 2012-01-18 | 2012-01-18 | Method for detecting offset of focus of lithography machine |
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| CN201210014990.5A CN102566315B (en) | 2012-01-18 | 2012-01-18 | Method for detecting offset of focus of lithography machine |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103928361A (en) * | 2013-01-14 | 2014-07-16 | 无锡华润上华科技有限公司 | Method for monitoring deviation of pattern in chip protection area |
| CN109478021A (en) * | 2016-07-11 | 2019-03-15 | Asml荷兰有限公司 | Method and apparatus for determining the fingerprint of performance parameter |
| CN109507850A (en) * | 2018-12-19 | 2019-03-22 | 惠科股份有限公司 | A kind of determination method, determining device and the terminal device of exposure parameter |
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| CN101561633A (en) * | 2008-04-18 | 2009-10-21 | 力晶半导体股份有限公司 | Method for monitoring photoetching technology and monitoring mark |
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| JP2007184364A (en) * | 2006-01-05 | 2007-07-19 | Hitachi High-Technologies Corp | Inspection device and method of pattern defect |
| CN101387832A (en) * | 2007-09-11 | 2009-03-18 | 上海华虹Nec电子有限公司 | Shot auto-correcting method for semiconductor wire width measuring and scanning electron microscope |
| CN101561633A (en) * | 2008-04-18 | 2009-10-21 | 力晶半导体股份有限公司 | Method for monitoring photoetching technology and monitoring mark |
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| CN103928361A (en) * | 2013-01-14 | 2014-07-16 | 无锡华润上华科技有限公司 | Method for monitoring deviation of pattern in chip protection area |
| CN109478021A (en) * | 2016-07-11 | 2019-03-15 | Asml荷兰有限公司 | Method and apparatus for determining the fingerprint of performance parameter |
| US11194258B2 (en) | 2016-07-11 | 2021-12-07 | Asml Netherlands B.V. | Method and apparatus for determining a fingerprint of a performance parameter |
| CN109507850A (en) * | 2018-12-19 | 2019-03-22 | 惠科股份有限公司 | A kind of determination method, determining device and the terminal device of exposure parameter |
| CN109507850B (en) * | 2018-12-19 | 2020-12-11 | 惠科股份有限公司 | Exposure parameter determination method and device and terminal equipment |
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