CN101458454B - Method for simultaneously monitoring photolithography exposure condition and registration photoetching precision - Google Patents
Method for simultaneously monitoring photolithography exposure condition and registration photoetching precision Download PDFInfo
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- CN101458454B CN101458454B CN2007100945133A CN200710094513A CN101458454B CN 101458454 B CN101458454 B CN 101458454B CN 2007100945133 A CN2007100945133 A CN 2007100945133A CN 200710094513 A CN200710094513 A CN 200710094513A CN 101458454 B CN101458454 B CN 101458454B
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Abstract
The invention discloses a method for monitoring photoetching exposure condition and alignment precision simultaneously. A rhombic measuring pattern is used for arranging a photoetching-alignment pattern, and the length, width and space period of each rhombus are small enough, so that macroscopic optical measurement can not distinguish all rhombuses from the photoetching-alignment pattern, while microcosmic photoetching can distinguish all rhombuses from the photoetching-alignment pattern; and then, an optical microscope is used for measuring the photoetching exposure condition and the photoetching-alignment precision simultaneously. Therefore, the method not only simplifies processing steps, reduces production cost and shortens production period of silicon chips, but also can monitor the change of exposure energy and the change of exposure focus for monitoring the exposure condition, so as to improve on-line monitoring capability for the exposure condition.
Description
Technical field
The present invention relates to photoetching in semiconductor manufacture technology monitoring technology on-line, relate in particular to the method for a kind of simultaneously monitoring photolithography exposure condition and alignment precision.
Background technology
In semiconductor is made, generally be photoetching alignment precision and critical size for the requirement of photoetching process.And corresponding on-line monitoring means generally have two kinds: the one, and the measurement of photoetching alignment precision, the 2nd, the measurement of critical size (being conditions of exposure), often a photoetching level has the monitoring program that comprises above two steps.And influence two factors that mainly contain of photoetching critical size: i.e. exposure energy and exposure focal length.In the prior art, generally can only reflect the variation of exposure energy to the measurement of critical size, and the variation of exposure focal length is lacked monitoring capacity.Yet the variation of exposure focal length can cause the variation of photoresist pattern, and finally influences the later critical size of etching, and therefore the exposure focal length being monitored is very important in fact.In the prior art, monitoring to conditions of exposure is generally all finished by scanning electron microscope (SEM), but its measuring process is comparatively loaded down with trivial details, and the SEM measurement can only be carried out the variation of critical size automatically, be difficult to measure automatically of the variation of the pattern of photoresist with the exposure focal length, and the critical size of general on-line monitoring figure is not enough to the variation sensitivity of exposure focal length, and the variation of the focal length that therefore exposes is difficult to measure automatically by SEM; In addition, though SEM is the alignment precision of some photoetching level of energy measurement also, but its scope of application is not wide, can not realize the alignment precision of all photoetching levels is measured, promptly be difficult to measure the later morphology change of the comprehensive deposit of backing material of the same race and focus on later can't the measurement owing to the electronics buildup effect causes the SEM electron beam for nonconducting backing material; And the measurement cost that use SEM measures alignment precision is higher, and measuring process is comparatively time-consuming, adds in the comparatively expensive therefore existing technology of SEM equipment the measurement of alignment precision is generally all finished by optical microscope.Therefore, in existing technology, generally all need to use simultaneously optical microscope and SEM, could monitor photoetching conditions of exposure and alignment precision simultaneously, so measuring process is comparatively complicated, and realize that cost is higher.
Summary of the invention
The technical problem to be solved in the present invention provides the method for a kind of simultaneously monitoring photolithography exposure condition and alignment precision, can only need carry out an optical measurement and just can finish monitoring simultaneously photolithographic exposure condition and photoetching alignment precision, and for the monitoring of photolithographic exposure condition, not only can monitor the variation of exposure energy, also can monitor out the variation of exposure focal length.
For solving the problems of the technologies described above, the invention provides the method for a kind of simultaneously monitoring photolithography exposure condition and alignment precision, may further comprise the steps:
At first, photoetching alignment graphic designs is become by a plurality of measurement pattern arrangements that are shaped as rhombus to form, and the value of the length of described each rhombus (21), width (22) and space periodic (23) should satisfy: macroscopical optical measurement can not be told each the rhombus measurement pattern in the described photoetching alignment figure, and the microcosmic photolithographic exposure then can be told each the rhombus measurement pattern in the described photoetching alignment figure;
Then, by optical microscope, in the optical measurement photoetching alignment precision, the length variations of optical measurement rhombus, and determine the variation of photolithographic exposure condition according to the variation of described rhombus length.
The present invention is owing to adopted technique scheme, has such beneficial effect, i.e. principle of dwindling based on line end, photoetching alignment graphic designs is become by the measurement pattern arrangement that is shaped as rhombus to form, and make length, width and the space periodic of described each rhombus obtain enough little, so that macroscopical optical measurement can not be told each rhombus in the described photoetching alignment figure, the microcosmic photolithographic exposure then is enough to tell each rhombus in the described photoetching alignment figure; Then, just can use optical microscope to finish the measurement that photolithographic exposure condition and photoetching alignment precision are changed simultaneously, thereby monitoring when having realized only need carrying out an optical measurement and just can finish to photolithographic exposure condition and photoetching alignment precision, therefore not only simplified measuring process, reduce production cost, and shortened the production cycle of silicon chip; And the method for the invention not only can be monitored the variation of exposure energy for the monitoring of monitoring conditions of exposure, also can monitor the variation of exposure focal length, thereby has improved the on-line monitoring ability to conditions of exposure.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the synoptic diagram of the photoetching alignment figure formed according to measurement pattern of the present invention;
Fig. 2 is the enlarged diagram of rhombus according to an embodiment of the invention;
Fig. 3 is according to the synoptic diagram of rhombus length of the present invention with the photoetching focal length variations.
Embodiment
In optical approach effect, exist a kind of so-called line end to dwindle (LES-Line EndShorting) phenomenon: to refer to that promptly at the two ends of figure, slynessization can appear in figure, dwindles the phenomenon that shortens owing to the diffraction of light effect.The variation of the shape of the then main and figure of the degree that line end dwindles, the size of live width and conditions of exposure (comprising exposure energy and the focal length that exposes) is relevant.Compare with common measurement pattern, it is more responsive than the figure of measuring general critical size that the measurement line end dwindles phenomenon, therefore more can monitor out the variation of etching condition, and this variation can be even as big as being arrived by optical microscope measuring, therefore the present invention's principle of mainly having utilized this line end to dwindle, photoetching alignment figure is redesigned, thereby realize and to come measuring light etching alignment precision and conditions of exposure simultaneously with optical microscope, thereby make monitoring when only need carry out an optical measurement just can finish photolithographic exposure condition and photoetching alignment precision, specific implementation method of the present invention is as follows:
As depicted in figs. 1 and 2, at first, photoetching alignment graphic designs is become by a plurality of measurement pattern arrangements that are shaped as rhombus to form, and the value of the length 21 of described each rhombus, width 22 and space periodic 23 should meet the following conditions: promptly make macroscopical optical measurement can not tell each rhombus in the described photoetching alignment figure, the microcosmic photolithographic exposure then can be told each rhombus in the described photoetching alignment figure.Wherein, for what the general personnel in this area were familiar be, described macroscopical optical measurement mainly refers to the optical measurement that resolution is lower, when carrying out the measurement of alignment precision, use visible light usually, and employed lens NA value is less, generally can only differentiate space periodic and the live width figure more than 0.5um; Described microcosmic photolithographic exposure then refers to the ability of the photolithographic exposure that resolution is higher, it is that 100nm, live width are the figure about 30～40nm that the ArF+ immersion lithography of general present maturation can be differentiated space periodic, if use the EUV technology of ultrashort wavelength (wavelength is about 10nm), then can also differentiate the littler figure of space periodic and live width.In one embodiment, the length 21 (being the length of described rhombus long-diagonal) of getting described each rhombus is 0.5～10 micron, and the minimum length of described each rhombus should be greater than the resolving limit of photoetching alignment precision measuring equipment, with the variation of guaranteeing finally can optical measurement to go out rhombus length, the maximum length of described each rhombus then should not surpass the scribe line width of silicon chip, enter in the device cell in order to avoid cause described rhombus measurement pattern also signed in, thereby influence the step office of device; The width 22 (being the length of described rhombus short diagonal) of getting described each rhombus is 0.01～1 micron, and the minimum widith of described each rhombus should be greater than the resolving limit of the photoetching process of current lithography layer, described each rhombus measurement pattern can both be able to be exposed out to guarantee current layer photoetching technology, the breadth extreme of described each rhombus then should can not be told described each rhombus measurement pattern to guarantee macroscopical optical measurement less than the resolving limit of photoetching alignment precision measuring equipment; And get space periodic 23 between described each rhombus (being the distance between the long-diagonal of each adjacent rhombus) between 0.01 micron to 1 micron, and the minimum space cycle between described each rhombus should be greater than the resolving limit of the photoetching process of current lithography layer, described each lozenge diagram is exposed out guaranteeing, the maximum space cycle between described each rhombus then should can not be told described each rhombus measurement pattern to guarantee macroscopical optical measurement less than the resolving limit of photoetching alignment precision measuring equipment.So just guaranteed that the resolution of scanning electron microscope (SEM) can tell the concrete shape of each rhombus in the described photoetching alignment figure; The resolution of optical microscope then is not enough to tell the concrete shape of each small rhombus in the described measurement pattern, the photoetching alignment figure of just forming that can see by lines with certain width, that is to say that described optical microscope can't tell the width of described measurement pattern (rhombus), and can only tell the length of described measurement pattern, so can measure the variation of rhombus length (bar that is photoetching alignment figure is wide) by described optical microscope.
Because the wedge angle of rhombus is with respect to common lines, its line end dwindles the change (focal length especially exposes) more responsive (promptly being easy to change along with the change of etching condition) for etching condition, therefore in the present invention, the drift angle 24 (angle that refers to the pairing vertical angle of described rhombus long-diagonal in the present invention) of getting described each rhombus is 0～90 degree, preferably, the drift angle 24 of getting described each rhombus is 0～45 degree, can effectively be distinguished with each rhombus measurement pattern after can either guaranteeing exposure, can not reduce the sensitivity of described each rhombus measurement pattern again, guarantee that promptly the later rhombus of exposure also is unlikely to become circular and two adjacent rhombuses can be differentiated conditions of exposure.Like this, pass through optical microscope, just can be in the optical measurement photoetching alignment precision, optical measurement comparatively sensitively goes out the length variations (being the variation of photoetching alignment figure live width) of rhombus, determine the variation of photolithographic exposure condition (focal length especially exposes) then according to the variation of described rhombus length, example as shown in Figure 3 and curve table understand that the line end of described rhombus length dwindles the rule with the variation of exposure focal length, and this Changing Pattern should be comparatively to be familiar with for one of ordinary skill in the art.For example, for the processing procedure of determining process conditions, can pass through FEM (focal length energy matrix method, FocusEnergy Matrix) method and determine optimum exposure condition and the current rhombus length that measures, this moment can a given scope, such as in some cases, according to the photoetching process of reality, can be with this scope definition under the optimum exposure condition each rhombus length 90%～110%, if the current rhombus length that measures is within this scope, then explanation exposure is normal, can flow; Otherwise, if the current rhombus length that measures is outside this scope, then the explanation exposure is undesired, needs to check conditions of exposure and equipment state, and then the exposure of doing over again again, wherein said optimum exposure condition refers to the conditions of exposure that changes hour with the conditions of exposure critical size.Owing to utilize the method for optical microscope measuring photoetching alignment precision for persons skilled in the art, to belong to known technology, therefore be not described in detail in this manual.Like this, just realized and to have measured photolithographic exposure condition and alignment precision more simultaneously by optical microscope.
Claims (3)
1. the method for simultaneously monitoring photolithography exposure condition and alignment precision is characterized in that, may further comprise the steps:
At first, photoetching alignment graphic designs is become by a plurality of measurement pattern arrangements that are shaped as rhombus to form, and the length of described each rhombus (21), the value of width (22) and space periodic (23) should satisfy: macroscopical optical measurement can not be told each the rhombus measurement pattern in the described photoetching alignment figure, the microcosmic photolithographic exposure then can be told each the rhombus measurement pattern in the described photoetching alignment figure, and the length of described each rhombus (21) is the length of described rhombus long-diagonal, described width (22) is the length of described rhombus short diagonal, described space periodic (23) is the distance between the long-diagonal of each adjacent rhombus;
Then, by optical microscope, in the optical measurement photoetching alignment precision, the length variations of optical measurement rhombus, and determine the variation of photolithographic exposure condition according to the variation of described rhombus length;
The length (21) of getting described each rhombus is 0.5～10 micron, and the minimum length of described each rhombus should be greater than the resolving limit of photoetching alignment precision measuring equipment, and maximum length should be no more than the scribe line width of silicon chip; The width (22) of getting described each rhombus is 0.01～1 micron, and the minimum widith of described each rhombus should be greater than the resolving limit of the photoetching process of current lithography layer, and breadth extreme should be less than the resolving limit of photoetching alignment precision measuring equipment; The space periodic of getting between described each rhombus (23) is 0.01～1 micron, and the minimum space cycle of described each rhombus should be greater than the resolving limit of the photoetching process of current lithography layer, and the maximum space cycle should be less than the resolving limit of photoetching alignment precision measuring equipment.
2. the method for simultaneously monitoring photolithography exposure condition according to claim 1 and alignment precision, it is characterized in that, the drift angle (24) of getting described each rhombus is 0～90 degree, and the drift angle of described each rhombus (24) refers to the angle of the pairing vertical angle of described rhombus long-diagonal.
3. the method for simultaneously monitoring photolithography exposure condition according to claim 2 and alignment precision, it is characterized in that, the drift angle (24) of getting described each rhombus is 0～45 degree, and the drift angle of described each rhombus (24) refers to the angle of the pairing vertical angle of described rhombus long-diagonal.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101995774B (en) * | 2009-08-20 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring performance of DMR |
| CN102043324B (en) * | 2009-10-22 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for evaluating overlay marker in development of new process |
| CN102043343B (en) * | 2009-10-23 | 2012-05-30 | 无锡华润上华半导体有限公司 | Method for measuring focus point of exposure machine |
| CN102236262A (en) * | 2010-05-07 | 2011-11-09 | 无锡华润上华半导体有限公司 | Method for determining best focal length of photoetching machine |
| CN102402123B (en) * | 2010-09-10 | 2013-11-06 | 无锡华润上华半导体有限公司 | Method for monitoring focal length of photoetching machine |
| CN102364301A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for measuring alignment precision of meshed boards |
| CN102543684A (en) * | 2011-11-11 | 2012-07-04 | 上海华力微电子有限公司 | Graphic structure design integrated with measurement of line width and alignment precision |
| CN105547655A (en) * | 2016-01-29 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Method for detecting optimal focal length of product through optical measurement |
| KR102535826B1 (en) * | 2017-11-28 | 2023-05-23 | 삼성전자주식회사 | Monitoring macro providing method, OPC method and EUV mask manufacturing method |
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| CN1652029A (en) * | 2005-02-07 | 2005-08-10 | 中国科学院光电技术研究所 | Bottom surface overlay alignment method of double-sided photoetching machine |
| CN1983032A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Scale and method for measuring photoetching alignment precision |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1652029A (en) * | 2005-02-07 | 2005-08-10 | 中国科学院光电技术研究所 | Bottom surface overlay alignment method of double-sided photoetching machine |
| CN1983032A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Scale and method for measuring photoetching alignment precision |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |