CN203631494U - Defect standard wafer - Google Patents
Defect standard wafer Download PDFInfo
- Publication number
- CN203631494U CN203631494U CN201320804370.1U CN201320804370U CN203631494U CN 203631494 U CN203631494 U CN 203631494U CN 201320804370 U CN201320804370 U CN 201320804370U CN 203631494 U CN203631494 U CN 203631494U
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- Prior art keywords
- defect
- separator
- standard sheet
- utility
- model
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 230000007547 defect Effects 0.000 title claims abstract description 122
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 10
- 238000007689 inspection Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001484259 Lacuna Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model provides a defect standard wafer used for monitoring the stability and the accuracy of an inspection tool. The defect standard wafer comprises a semiconductor substrate equipped with M defect regions, N isolating layers formed in the defect regions, and multiple defects, wherein the multiple defects are formed in a first defect region in a first isolating layer, a second defect region in a second isolating layer, and a Mth defect region in an Nth isolating layer. The defects are distributed in different defect regions of different isolating layers. Since the defects are distributed in a stepped manner, the defect standard wafer provided by the utility model has a higher accuracy requirement of the inspection tool compared with single planar distribution in the prior art when the stability and the accuracy of the inspection tool are detected. Therefore, the stability and the accuracy of the inspection tool can be monitored very sensitively.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of defect standard sheet.
Background technology
In semiconductor fabrication, As time goes on equipment board there will be different situations, such as performance shakiness, break down etc.For performance that can periodic monitor equipment board, understand in time its performance whether deviation occurs, just need to use standard film (Standard wafer) to monitor equipment board.
Defect Scanning board (Inspection tool) is high-precision checkout equipment, for the defect of scanning wafer.Described Defect Scanning board has very important effect for technique research and development, the Yield lmproved of integrated circuit.For guaranteeing that Defect Scanning board can effectively bring into play the effect of factory's " eyes ", scanning accuracy and the scanning stabilization of monitoring Defect Scanning board are very important.
In prior art, conventionally adopt a kind of defect standard sheet for monitoring precision and the stability of Defect Scanning board, please refer to Fig. 1, described defect standard sheet comprises Semiconductor substrate 10 and is formed on multiple defects 20 on described Semiconductor substrate 10 surfaces, wherein, between described defect 20, keep certain spacing.In the time that Defect Scanning board is monitored, familiar lacunas scanning machine carries out Defect Scanning to described defect standard sheet, if find there is deviation in the result and the right value that scan, and certain deviation has appearred in description defect scanning machine, and reply Defect Scanning board is safeguarded.
But, along with semiconductor feature sizes continue reduce, less defect also can affect yield and the reliability of wafer, but, less defect can only just can be detected conventionally in Defect Scanning board precision and well behaved situation, that is to say, once Defect Scanning board occurred slight deviation and stability inadequate, just cannot detect accurately less defect, thereby occur undetected.Therefore, semiconductor feature sizes continue that to reduce stability and required precision to Defect Scanning board more and more higher.So, find sensitiveer method and monitor the precision and stability of Defect Scanning board, to adapt to the demand of advanced technologies, become a very important problem.
Utility model content
The purpose of this utility model is to provide a kind of defect standard sheet, the precision and stability of monitoring Defect Scanning board that can be very sensitive.
To achieve these goals, the utility model proposes a kind of defect standard sheet, for monitoring stability and the precision of Defect Scanning board, described defect standard sheet comprises:
Semiconductor substrate, described Semiconductor substrate comprises M defect area;
N layer separator, described separator is laminated on described defect area, and each separator all has M defect area;
Multiple defects, described defect is respectively formed at first defect area of ground floor separator, second defect area of second layer separator, M defect area of N layer separator;
Wherein, N and M are positive integer.
Further, between described defect, there is preliminary dimension and spacing.
Further, the scope of described preset space length is 0.01 μ m～10 μ m.
Further, the size range of described defect is 0.01 μ m～10 μ m.
Further, the thickness range of described separator is 0.01 μ m～10 μ m.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: by defect distribution on the different defect areas of different separators, because the distribution of defect is notch cuttype, in the time that Defect Scanning board is carried out to stability and accuracy detection, the middle compared to prior art single plane of the defect standard sheet the utility model proposes distributes higher to the required precision of Defect Scanning board, stability and the precision of monitoring Defect Scanning board that therefore can be very sensitive.
Accompanying drawing explanation
Fig. 1 is the structural representation of defect standard sheet in prior art;
Fig. 2 is the structural representation of defect standard sheet in the utility model one embodiment.
Embodiment
Below in conjunction with schematic diagram, defect standard sheet of the present utility model is described in more detail, wherein represent preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the utility model chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to about system or about the restriction of business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with way of example, the utility model is more specifically described with reference to accompanying drawing.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2, in the present embodiment, proposed a kind of defect standard sheet, for monitoring stability and the precision of Defect Scanning board, described defect standard sheet comprises:
Multiple defects 300, described defect 300 is respectively formed at first defect area of ground floor separator 200, second defect area of second layer separator 200, M defect area of N layer separator;
Wherein, N and M are the positive integer that is greater than 0.
In the present embodiment, between described defect 300, have predetermined space W, the scope 0.01 μ m～10 μ m of described predetermined space W, for example, be 2 μ m; The size range of described defect 300 is 0.01 μ m～10 μ m, for example, be 1 μ m; Under normal circumstances, the size of described defect 300 is less just higher to the required precision of described Defect Scanning board, for whether the precision that can monitor described Defect Scanning board there is small deviation, preferably, in the resolution situation that can reach at described Defect Scanning board, the size of described defect 300 should be as much as possible little; The thickness range of described separator 200 is 0.01 μ m～10 μ m, for example, be 0.5 μ m, and the thickness of described separator 200 is the smaller the better, and under normal circumstances, the material of described separator 200 is silica.
In the present embodiment, conventionally first form thin film on the surface of described Semiconductor substrate, for example silicon, polysilicon, silicon nitride or aluminium etc., then, use tracking cross in the upper definition of described film (certain defect area) defect, then, the part that is etched in definition defect forms defect, then, deposition one deck silica is as separator; Can also be at surface deposition one deck silica of Semiconductor substrate, then, use tracking cross in the upper definition of described silica (certain defect area) defect, form defect by the part that is etched in definition defect again, then, can on defect area, fill copper or tungsten, then copper or tungsten carried out to cmp processing, finally deposit again one deck silica as separator.Filling copper or tungsten is the Defect Scanning condition in order to simulate last part technology, thereby can monitor more accurately the precision of described Defect Scanning board.
Described defect standard sheet is in the time of the stability problem of the described Defect Scanning board of concrete monitoring, can analyze by defect standard sheet is scanned to the result obtaining, if there is deviation in focusing, the deviation that judges described Defect Scanning board according to the deviation of focusing so more how, accordingly described Defect Scanning board is safeguarded again, made it reach best operating state.
To sum up, in the defect standard sheet providing at the utility model embodiment, by defect distribution on the different defect areas of different separators, because the distribution of defect is notch cuttype, in the time that Defect Scanning board is carried out to stability and accuracy detection, the middle compared to prior art single plane of the defect standard sheet the utility model proposes distributes higher to the required precision of Defect Scanning board, stability and the precision of monitoring Defect Scanning board that therefore can be very sensitive.
Above are only preferred embodiment of the present utility model, the utility model is not played to any restriction.Any person of ordinary skill in the field; not departing from the scope of the technical solution of the utility model; the technical scheme that the utility model is disclosed and technology contents make any type of variations such as replacement or modification that are equal to; all belong to the content that does not depart from the technical solution of the utility model, within still belonging to protection range of the present utility model.
Claims (5)
1. a defect standard sheet, for monitoring stability and the precision of Defect Scanning board, is characterized in that, described defect standard sheet comprises:
Semiconductor substrate, described Semiconductor substrate comprises M defect area;
N layer separator, described separator is laminated on described defect area, and each separator all has M defect area;
Multiple defects, described defect is respectively formed at first defect area of ground floor separator, second defect area of second layer separator, M defect area of N layer separator;
Wherein, N and M are positive integer.
2. defect standard sheet as claimed in claim 1, is characterized in that, has preliminary dimension and spacing between described defect.
3. defect standard sheet as claimed in claim 2, is characterized in that, the scope of described preset space length is 0.01 μ m～10 μ m.
4. defect standard sheet as claimed in claim 2, is characterized in that, the size range of described defect is 0.01 μ m～10 μ m.
5. defect standard sheet as claimed in claim 1, is characterized in that, the thickness range of described separator is 0.01 μ m～10 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804370.1U CN203631494U (en) | 2013-12-09 | 2013-12-09 | Defect standard wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804370.1U CN203631494U (en) | 2013-12-09 | 2013-12-09 | Defect standard wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203631494U true CN203631494U (en) | 2014-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320804370.1U Expired - Lifetime CN203631494U (en) | 2013-12-09 | 2013-12-09 | Defect standard wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203631494U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111426495A (en) * | 2020-04-01 | 2020-07-17 | 长江存储科技有限责任公司 | Method for verifying performance of chemical mechanical polishing device |
-
2013
- 2013-12-09 CN CN201320804370.1U patent/CN203631494U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111426495A (en) * | 2020-04-01 | 2020-07-17 | 长江存储科技有限责任公司 | Method for verifying performance of chemical mechanical polishing device |
| CN111426495B (en) * | 2020-04-01 | 2022-06-10 | 长江存储科技有限责任公司 | Method for verifying performance of chemical mechanical polishing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140604 |