WO2023082411A1 - Photomask, and manufacturing method and exposure method therefor - Google Patents

Photomask, and manufacturing method and exposure method therefor Download PDF

Info

Publication number
WO2023082411A1
WO2023082411A1 PCT/CN2021/138265 CN2021138265W WO2023082411A1 WO 2023082411 A1 WO2023082411 A1 WO 2023082411A1 CN 2021138265 W CN2021138265 W CN 2021138265W WO 2023082411 A1 WO2023082411 A1 WO 2023082411A1
Authority
WO
WIPO (PCT)
Prior art keywords
area
element group
test element
group mark
scribe
Prior art date
Application number
PCT/CN2021/138265
Other languages
French (fr)
Chinese (zh)
Inventor
虞静
Original Assignee
长鑫存储技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Publication of WO2023082411A1 publication Critical patent/WO2023082411A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present application relates to the technical field of semiconductor processing, in particular to a photomask, a manufacturing method thereof, and an exposure method.
  • the first aspect of the present application provides a photomask, comprising: a first pattern area and a first scribe area surrounding the first pattern area, and a first test element is provided in the first scribe area group marks, and along the width direction of the first scribe area, there is a gap between the side of the first test element group mark and the edge adjacent to the first test element group mark in the first scribe area First gap.
  • the first test element group mark in the mask is located in the first scribe area, and there is a first gap between the side of the first test element group mark and the edge adjacent to the first test element group mark in the first scribe area, That is, there is a first gap between the mark of the first test element group and the first pattern area.
  • the resist will separate the metal during the second scan, so that the metal located in the first gap is Removal, there will be no excess metal residue on the photomask, so as to avoid the influence of residual metal on the pattern area of the wafer chip.
  • the second aspect of the present application provides a method for manufacturing a photomask, including:
  • the first pattern including a first pattern area, a first sub-scribe area surrounding the first pattern area, and The first test element group marks, and the first test element group marks overlap with the first sub-scribe area; along the width direction of the first sub-scribe area, the first test element group marks The distance from the first pattern area is greater than the distance between the first sub-cutting line area and the first pattern area;
  • the test element group marks are arranged along a first direction; along the first direction, there is a space between an edge of the first test element group mark and an edge adjacent to the first test element group mark in the first scribe area.
  • the third aspect of the present application provides an exposure method, including:
  • a wafer including a plurality of exposure areas distributed in an array
  • FIG. 1 is a schematic structural view of a photomask provided in an embodiment of the present application
  • FIG. 2 is a structural schematic diagram of the first exposure in the process of making a photomask provided by the embodiment of the present application;
  • Fig. 3 is a structural schematic diagram of the second exposure of the mask in Fig. 2;
  • 4a-4d are schematic diagrams of the manufacturing process of the second exposure of a photomask provided by the embodiment of the present application.
  • Icon 100-the first graphic area; 200-the first cutting line area; 300-the first test element group mark; 400-the second graphic area; 500-the second cutting line area; 600-the second test element group mark; 700-substrate; 210-first sub-scribing line area; 220-second sub-scribing line area; 310-first side; 320-second side; 610-third side; 620-fourth side; 710-substrate; 720-translucent film layer; 730-metal layer; 800-photoresist layer.
  • the first aspect of the present application provides a photomask, including: a first graphic area 100 and a first scribe area 200 surrounding the first graphic area 100 , the first scribe area 200 There is a first test element group mark 300 inside, and along the width direction of the first kerf area 200, the side of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first kerf area 200 There is a first gap between them.
  • the first test element group mark 300 in the photomask is located in the first kerf area 200, and between the side of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first kerf area 200 There is a first gap, that is, there is a first gap between the first test element group mark 300 and the first pattern area 100.
  • the resist will separate the metal during the second scan, so that the The metal in the first gap is removed, and there will be no excess metal residue on the photomask, thereby avoiding the influence of the residual metal on the pattern area of the wafer chip.
  • the shape of the first test element group mark 300 is a rectangle, and the sides of the first test element group mark 300 include a first side 310 and a second side 320 arranged in parallel, and the first side 310
  • the extension direction of the second side 320 is the same as the extension direction of the first scribe area 200
  • the edge of the first scribe area 200 includes a first edge and a second edge, and the first edge is located on the first side 310 away from the second edge.
  • the second edge is located on the side of the second side 320 away from the first side 310;
  • the first scribe area 200 is an annular area surrounding the first graphic area 100, and the part of the first scribe area 200 corresponding to the first test element group mark 300 is a strip extending along the X direction.
  • the first test The first side 310 and the second side 320 of the element group mark 300 both extend along the X direction; the first side 310 is adjacent to the first edge, the second side 320 is adjacent to the second edge, and the first side 310 is adjacent to the second edge.
  • the width of the first test element group mark 300 that is, the vertical distance between the first side 310 and the second side 320
  • the distance between the first test element group mark 300 and the first pattern area 100 has a margin, so that the mask During the second scan in the manufacturing process, the resist will separate the metal, such as chrome, used as the metal layer 730 , so that there will be no excess metal remaining on the photomask.
  • the first gap a satisfies: a ⁇ 0.5 ⁇ m.
  • the width of the first scribe line region 200 is 60 ⁇ m
  • the width of the first test element group mark 300 is 59 ⁇ m
  • the first gap between the side 310 and the first edge is 0.5 ⁇ m
  • the first gap between the second side 320 and the second edge is also 0.5 ⁇ m.
  • the value of the first gap between the first side 310 and the first edge and the value of the first gap between the second side 320 and the second edge may or may not be equal.
  • the width d 1 of the first test element group mark 300 and the width D 1 of the first scribe area 200 satisfy the following relationship:
  • the range of ⁇ 1 is 80%-85%.
  • the mask further includes a second pattern area 400 and a second scribe area 500 surrounding the second pattern area 400 , and the second scribe area 500 overlaps with the first scribe area 200
  • There is a second test element group mark 600 in the second scribe area 500 the second test element group mark 600 is located in the overlapping area, the second test element group mark 600 and the first test element group mark 300 are arranged along the first direction, wherein , the first direction is the arrangement direction of the first graphic area 100 and the second graphic area 400;
  • the photomask is used in the process of exposing the wafer. There are multiple chip areas distributed in an array on the wafer.
  • the photomask has a graphic area corresponding to one or a group of chip areas, and each graphic area is also in an array. Distribution, the chip area corresponding to each graphic area is a test group, and each test group corresponds to a test element group mark.
  • the first graphic area 100 and the second graphic area 400 are both rectangular, and the first graphic area 100 and the second graphic area 400 are arranged along the Y direction, and the first scribe area 200 surrounds the first graphic area 100 Outside, the second scribe area 500 surrounds the outside of the second pattern area 400, the first scribe area 200 includes a first part and a second part extending along the X direction, and the first part and the second part are arranged along the Y direction, and the second The scribe line area 500 includes a third portion and a fourth portion extending along the X direction, and the third portion and the fourth portion are arranged along the Y direction, and the third portion and the second portion are completely overlapped.
  • the first test element group marks 300 are located in the first part for cooperating with the first graphic area 100
  • the second test element group marks 600 are located in the third part, namely the second part, for cooperating with the second graphic area 400 .
  • the second test element group mark 600 in the photomask is located in the area where the second scribe line area 500 overlaps with the first scribe line area 200, and the side of the second test element group mark 600 is in line with the second scribe line area 500 or the first scribe line area.
  • first gap and the second gap may or may not be equal.
  • the shape of the second test element group mark 600 is a rectangle, and the sides of the second test element group mark 600 include a third side 610 and a fourth side 620 arranged in parallel, and the third side 610 And the extension direction of the fourth side 620 is the same as the extension direction of the second scribe area 500, the edge of the second scribe area 500 includes a third edge and a fourth edge, and the third edge is located on the third side 610 away from the first On one side of the four sides 620, the fourth edge is located on the side of the fourth side 620 away from the third side 610;
  • the second scribe area 500 is an annular area surrounding the second graphic area 400, and the part of the second scribe area 500 corresponding to the second test element group mark 600 is a strip extending along the X direction.
  • the second test The third side 610 and the fourth side 620 of the element group mark 600 both extend along the X direction; the third side 610 is adjacent to the third edge, the fourth side 620 is adjacent to the fourth edge, and the third side 610 is adjacent to the fourth edge.
  • the distance between the second test element group mark 600 and the second pattern area 400 has a margin, so that the mask During the second scan in the manufacturing process, the resist will separate the metal, such as chrome, used as the metal layer 730 , so that there will be no excess metal remaining on the photomask.
  • the second gap b satisfies: b ⁇ 0.5 ⁇ m.
  • the width of the second scribe line region 500 is 60 ⁇ m
  • the width of the second test element group mark 600 is 59 ⁇ m
  • along the width direction of the second test element group mark 600 the third side
  • the second gap between the side 610 and the third edge is 0.5 ⁇ m
  • the second gap between the fourth side 620 and the fourth edge is also 0.5 ⁇ m.
  • the value of the second gap between the third side 610 and the third edge and the value of the second gap between the fourth side 620 and the fourth edge may or may not be equal.
  • the width d 2 of the second test element group mark 600 and the width D 2 of the second scribe area 500 satisfy the following relationship:
  • the range of ⁇ 2 is 80%-85%.
  • the first kerf area 200 includes a first sub-kerf area 210 and a second sub-kerf area 220 , wherein the first sub-kerf area 210 is located in the second sub-kerf area 210 .
  • the second sub-scribing line area 220 surrounds the first sub-scribing line area 210
  • the first sub-scribing line area 210 surrounds the first pattern area 100 .
  • the second aspect of the present application provides a photomask manufacturing method, including:
  • a substrate 700 is provided, and the substrate 700 includes a substrate 710, a semitransparent film layer 720 located on one side of the substrate 710, and a metal layer 730 located on the side of the semitransparent film layer 720 away from the substrate 710, for example, the metal layer 730 can adopt metal chrome;
  • the substrate 700 is patterned for the first time to form a first pattern on the substrate 700.
  • the first pattern includes a first pattern area 100, a first sub-scribe area 210 surrounding the first pattern area 100, and a first test pattern.
  • Element group marks 300, and the first test element group marks 300 overlap with the first sub-scribe area 210; along the width direction of the first sub-scrib area 210, the first test element group marks 300 and the first pattern area 100 The distance between is larger than the distance between the first sub-scribe area 210 and the first pattern area 100;
  • the substrate 700 is patterned for the second time to form a second pattern on the first pattern of the substrate 700, the second pattern includes the second sub-cutting area 220 and the second test element group mark 600; the second sub-cut The road area 220 surrounds the first sub-cut road area 210 to form the first road area 200 with the first sub-cut road area 210; the first test element group mark 300 overlaps with the second sub-cut road area 220, and the second The two test element group marks 600 overlap with the first sub-cutting line region 210 and the second sub-cutting line region 220, and the second test element group mark 600 and the first test element group mark 300 are arranged along the first direction; In the first direction, there is a first gap between the edge of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first scribe area 200; There is a second gap between edges adjacent to the second test element group mark 600 in the scribe line region 200 .
  • the distance between the first test element group mark 300 and the first pattern area 100 has a margin, so that the resist will separate the metal as the metal layer 730 such as chromium during the second scanning during the photomask production process. , so that there will be no excess metal residue on the mask.
  • Fig. 2 is the first exposure in the photomask manufacturing process
  • the first test element group mark 300 and the first sub-cutting line area 210 are all light-transmitting areas
  • the first pattern area 100 of the first photomask is a light-shielding area, so that The first sub-scribe area 210 and the first test element group mark 300 on the mask are exposed, and the second sub-scribe area 220 , the first pattern area 100 and the second test element group mark 600 on the mask are blocked.
  • Fig. 3 is the second exposure in the photomask manufacturing process
  • the second test element group mark 600 and the second sub-cut line area 220 are all light-transmitting areas
  • the first pattern area 100 of the second photomask is a light-shielding area, so that The second sub-scribe area 220 and the second test element group mark 600 on the mask are exposed, and the first sub-scribe area 210 , the first pattern area 100 and the first test element group mark 300 on the mask are blocked. Since the first test element group mark 300 in the photomask has a margin from the first pattern area 100, there will be no excess metal residue on the photomask, so the exposure of the wafer will not affect the chip area in the test group. graphics.
  • Figure 4a- Figure 4d shows the process that substrate 700 is exposed for the second time, with reference to Figure 4a, photoresist is coated on substrate 700, forms photoresist layer 800; Perform exposure treatment, the dotted line in Figure 4a is the exposure range; referring to Figure 4b, a patterned photoresist layer 800 is obtained by developing the exposed photoresist; referring to Figure 4c, etching the developed photoresist ; Referring to FIG. 4d, by using an etching solution to etch the substrate 700, the metal such as chromium adjacent to the first pattern area 100 in the scribe line area is etched without residue.
  • the first gap a satisfies: a ⁇ 0.5 ⁇ m.
  • the width d 1 of the first test element group mark 300 and the width D 1 of the first scribe area 200 satisfy the following relationship:
  • the range of ⁇ 1 is 80%-85%.
  • the second gap b satisfies: b ⁇ 0.5 ⁇ m.
  • the width d 2 of the second test element group mark 600 and the width D 1 of the first scribe area 200 satisfy the following relationship:
  • the range of ⁇ 2 is 80%-85%.
  • the third aspect of the present application provides an exposure method, including:
  • a wafer including a plurality of exposure areas distributed in an array
  • the wafer includes at least one test group, and each test group includes a chip area and a dicing line surrounding the chip area, wherein the dicing line is provided with a first test element group that cooperates with the test group and an adjacent test group. Fitting second test element group.
  • the first scribe area corresponds to the scribe area
  • the first pattern area corresponds to the chip area
  • the first test element group mark corresponds to the first test element group correspondence
  • the second test element group flag corresponds to the second test element group.
  • the first test element group marks in the photomask have a margin, that is, the first gap, from the first pattern area, so that the metal in the first gap such as chromium is completely removed during the production of the photomask, so that when the wafer is exposed, the photomask does not Affects the bar pattern within the area of the chip.
  • the embodiments of the present application may be provided as methods, systems, or computer program products. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
  • computer-usable storage media including but not limited to disk storage, CD-ROM, optical storage, etc.
  • These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing apparatus to operate in a specific manner, such that the instructions stored in the computer-readable memory produce an article of manufacture comprising instruction means, the instructions
  • the device realizes the function specified in one or more procedures of the flowchart and/or one or more blocks of the block diagram.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A photomask, and a manufacturing method and exposure method therefor. The photomask comprises: a first graphical region (100) and a first cutting channel region (200), which surrounds the first graphical region (100), wherein a first test element group mark (300) is provided in the first cutting channel region (200), and in the width direction of the first cutting channel region (200), a first gap is provided between a side edge of the first test element group mark (300) and an edge of the first cutting channel region (200) that is adjacent to the first test element group mark (300). In the photomask, a first gap is provided between a side edge of a first test element group mark (300) and an edge of a first cutting channel region (200) that is adjacent to the first test element group mark (300), that is, the first gap is provided between the first test element group mark (300) and a first graphical region (100). During a second scan in a photomask manufacturing process, metal is spaced apart by means of a photoresist, such that metal in the first gap is removed, and there is no surplus metal residue on the photomask, thereby avoiding the effect of residual metal on a graphical region of a wafer chip.

Description

一种光罩及其制作方法以及曝光方法A kind of photomask and its manufacturing method and exposure method
相关申请的交叉引用Cross References to Related Applications
本申请要求在2021年11月15日提交中国专利局、申请号为202111350363.4、申请名称为“一种光罩及其制作方法以及曝光方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202111350363.4 and the application title "a photomask and its manufacturing method and exposure method" submitted to the China Patent Office on November 15, 2021, the entire content of which is incorporated by reference in this application.
技术领域technical field
本申请涉及半导体加工技术领域，特别涉及一种光罩及其制作方法以及曝光方法。The present application relates to the technical field of semiconductor processing, in particular to a photomask, a manufacturing method thereof, and an exposure method.
背景技术Background technique
随着电子产业的高速发展，在液晶显示(Liquid Crystal Display，LCD)、集成电路(Integrated Circuit，IC)等电子制造行业中，光罩成为了必不可少的重要模具之一，其应用越来越广泛。PSM(Phase Shift Mask，相位转移掩膜)光罩在制作过程中需要进行第二次扫描，以将多余的金属去除掉，但仍然有金属残留，从而使得芯片制程中损害到芯片图形区域的条形图形形貌。With the rapid development of the electronics industry, in the electronics manufacturing industries such as Liquid Crystal Display (LCD) and Integrated Circuit (IC), photomasks have become one of the indispensable and important molds, and their applications are becoming more and more more extensive. The PSM (Phase Shift Mask, phase shift mask) mask needs to be scanned for the second time during the production process to remove the excess metal, but there are still metal residues, which will damage the strips of the chip graphics area during the chip manufacturing process. Graphic shape.
发明内容Contents of the invention
根据一些实施例，本申请第一方面提供一种光罩，包括：第一图形区域以及围绕所述第一图形区域的第一切割道区域，所述第一切割道区域内具有第一测试元素组标记，且沿所述第一切割道区域的宽度方向，所述第一测试元素组标记的侧边与所述第一切割道区域中邻近所述第一测试元素组标记的边缘之间具有第一间隙。According to some embodiments, the first aspect of the present application provides a photomask, comprising: a first pattern area and a first scribe area surrounding the first pattern area, and a first test element is provided in the first scribe area group marks, and along the width direction of the first scribe area, there is a gap between the side of the first test element group mark and the edge adjacent to the first test element group mark in the first scribe area First gap.
本申请的实施例至少具有以下优点：Embodiments of the present application have at least the following advantages:
光罩中第一测试元素组标记位于第一切割道区域内，且第一测试元素组标记的侧边与第一切割道区域中邻近第一测试元素组标记的边缘之间具有第 一间隙，即第一测试元素组标记与第一图形区域之间具有第一间隙，在光罩的制作过程中，第二次扫描时光刻胶会将金属隔开，从而使得位于第一间隙内的金属被去除，光罩上不会有多余的金属残留，从而避免残留金属对晶圆芯片图形区域的影响。The first test element group mark in the mask is located in the first scribe area, and there is a first gap between the side of the first test element group mark and the edge adjacent to the first test element group mark in the first scribe area, That is, there is a first gap between the mark of the first test element group and the first pattern area. During the manufacturing process of the photomask, the resist will separate the metal during the second scan, so that the metal located in the first gap is Removal, there will be no excess metal residue on the photomask, so as to avoid the influence of residual metal on the pattern area of the wafer chip.
根据一些实施例，本申请第二方面提供一种光罩制作方法，包括：According to some embodiments, the second aspect of the present application provides a method for manufacturing a photomask, including:
提供一基板；providing a substrate;
对所述基板进行第一次图案化处理，以在所述基板上形成第一图案，所述第一图案包括第一图形区域、围绕所述第一图形区域的第一子切割道区域、以及第一测试元素组标记，且所述第一测试元素组标记与所述第一子切割道区域存在重叠区域；沿所述第一子切割道区域的宽度方向，所述第一测试元素组标记与所述第一图形区域的间距大于所述第一子切割道区域与所述第一图形区域的间距；performing a first patterning process on the substrate to form a first pattern on the substrate, the first pattern including a first pattern area, a first sub-scribe area surrounding the first pattern area, and The first test element group marks, and the first test element group marks overlap with the first sub-scribe area; along the width direction of the first sub-scribe area, the first test element group marks The distance from the first pattern area is greater than the distance between the first sub-cutting line area and the first pattern area;
对所述基板进行第二次图案化处理，以在所述基板的第一图案的上形成第二图案，所述第二图案包括第二子切割道区域以及第二测试元素组标记；所述第二子切割道区域围绕所述第一子切割道区域，以与所述第一子切割道区域形成第一切割道区域；所述第一测试元素组标记与所述第二子切割道区域存在重叠区域，且所述第二测试元素组标记与所述第一子切割道区域和所述第二子切割道区域均存在重叠区域，且所述第二测试元素组标记与所述第一测试元素组标记沿第一方向排列；沿所述第一方向，所述第一测试元素组标记的边缘与所述第一切割道区域中邻近所述第一测试元素组标记的边缘之间具有第一间隙；所述第二测试元素组标记的边缘与所述第一切割道区域中邻近所述第二测试元素组标记的边缘之间具有第二间隙。performing a second patterning process on the substrate to form a second pattern on the first pattern of the substrate, the second pattern including a second sub-cutting line area and a second test element group mark; the The second sub-scribing street area surrounds the first sub-scribing street area to form a first scribing street area with the first sub-scribing street area; the first test element group mark and the second sub-scribing street area There is an overlapping area, and there is an overlapping area between the second test element group mark and the first sub-cutting line area and the second sub-cutting line area, and the second test element group mark and the first The test element group marks are arranged along a first direction; along the first direction, there is a space between an edge of the first test element group mark and an edge adjacent to the first test element group mark in the first scribe area. A first gap; there is a second gap between the edge of the second test element group mark and the edge adjacent to the second test element group mark in the first scribe area.
根据一些实施例，本申请第三方面提供一种曝光方法，包括：According to some embodiments, the third aspect of the present application provides an exposure method, including:
提供一晶圆，包括多个呈阵列分布的曝光区域；providing a wafer, including a plurality of exposure areas distributed in an array;
以如第一方面中任一项所述的光罩对所述晶圆进行曝光，以在每个所述曝光区域形成曝光图案。Exposing the wafer with the photomask according to any one of the first aspect to form an exposure pattern in each of the exposure regions.
附图说明Description of drawings
图1为本申请实施例提供的一种光罩的结构示意图；FIG. 1 is a schematic structural view of a photomask provided in an embodiment of the present application;
图2为本申请实施例提供的一种光罩制作过程中第一次曝光的结构示意图；FIG. 2 is a structural schematic diagram of the first exposure in the process of making a photomask provided by the embodiment of the present application;
图3为图2中光罩第二次曝光的结构示意图；Fig. 3 is a structural schematic diagram of the second exposure of the mask in Fig. 2;
图4a-图4d为本申请实施例提供的一种光罩第二次曝光的制作流程示意。4a-4d are schematic diagrams of the manufacturing process of the second exposure of a photomask provided by the embodiment of the present application.
图标：100-第一图形区域；200-第一切割道区域；300-第一测试元素组标记；400-第二图形区域；500-第二切割道区域；600-第二测试元素组标记；700-基板；210-第一子切割道区域；220-第二子切割道区域；310-第一侧边；320-第二侧边；610-第三侧边；620-第四侧边；710-衬底；720-半透明膜层；730-金属层；800-光刻胶层。Icon: 100-the first graphic area; 200-the first cutting line area; 300-the first test element group mark; 400-the second graphic area; 500-the second cutting line area; 600-the second test element group mark; 700-substrate; 210-first sub-scribing line area; 220-second sub-scribing line area; 310-first side; 320-second side; 610-third side; 620-fourth side; 710-substrate; 720-translucent film layer; 730-metal layer; 800-photoresist layer.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
根据一些实施例，如图1所示，本申请第一方面提供一种光罩，包括：第一图形区域100以及围绕第一图形区域100的第一切割道区域200，第一切割道区域200内具有第一测试元素组标记300，且沿第一切割道区域200的宽度方向，第一测试元素组标记300的侧边与第一切割道区域200中邻近第一测试元素组标记300的边缘之间具有第一间隙。According to some embodiments, as shown in FIG. 1 , the first aspect of the present application provides a photomask, including: a first graphic area 100 and a first scribe area 200 surrounding the first graphic area 100 , the first scribe area 200 There is a first test element group mark 300 inside, and along the width direction of the first kerf area 200, the side of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first kerf area 200 There is a first gap between them.
本申请的实施例至少具有以下优点：Embodiments of the present application have at least the following advantages:
光罩中第一测试元素组标记300位于第一切割道区域200内，且第一测试元素组标记300的侧边与第一切割道区域200中邻近第一测试元素组标记300的边缘之间具有第一间隙，即第一测试元素组标记300与第一图形区域100之间具有第一间隙，在光罩的制作过程中，第二次扫描时光刻胶会将金属 隔开，从而使得位于第一间隙内的金属被去除，光罩上不会有多余的金属残留，从而避免残留金属对晶圆芯片图形区域的影响。The first test element group mark 300 in the photomask is located in the first kerf area 200, and between the side of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first kerf area 200 There is a first gap, that is, there is a first gap between the first test element group mark 300 and the first pattern area 100. During the manufacturing process of the photomask, the resist will separate the metal during the second scan, so that the The metal in the first gap is removed, and there will be no excess metal residue on the photomask, thereby avoiding the influence of the residual metal on the pattern area of the wafer chip.
在一些实施例中，第一测试元素组标记300的形状为矩形，第一测试元素组标记300的侧边包括平行设置的第一侧边310和第二侧边320，且第一侧边310以及第二侧边320的延伸方向均与第一切割道区域200的延伸方向相同，第一切割道区域200的边缘包括第一边缘和第二边缘，第一边缘位于第一侧边310背离第二侧边320的一侧，第二边缘位于第二侧边320背离第一侧边310的一侧；In some embodiments, the shape of the first test element group mark 300 is a rectangle, and the sides of the first test element group mark 300 include a first side 310 and a second side 320 arranged in parallel, and the first side 310 And the extension direction of the second side 320 is the same as the extension direction of the first scribe area 200, the edge of the first scribe area 200 includes a first edge and a second edge, and the first edge is located on the first side 310 away from the second edge. On one side of the two sides 320, the second edge is located on the side of the second side 320 away from the first side 310;
第一侧边310与第一边缘之间具有第一间隙；和/或，There is a first gap between the first side 310 and the first edge; and/or,
第二侧边320与第二边缘之间具有第一间隙。There is a first gap between the second side 320 and the second edge.
参照图1，第一切割道区域200为围绕第一图形区域100的环形区域，第一切割道区域200与第一测试元素组标记300对应的部分为沿X方向延伸的条形，第一测试元素组标记300的第一侧边310以及第二侧边320均沿X方向延伸；第一侧边310与第一边缘邻近，第二侧边320与第二边缘邻近，第一侧边310与第一边缘之间具有第一间隙a，第二侧边320与第二边缘之间具有第一间隙a。通过减小第一测试元素组标记300的宽度即第一侧边310与第二侧边320的垂直距离，使得第一测试元素组标记300距离第一图形区域100具有余量，从而使得光罩制程中第二次扫描时光刻胶会将作为金属层730的金属如铬隔开，从而使光罩上不会有多余的金属残留。Referring to FIG. 1 , the first scribe area 200 is an annular area surrounding the first graphic area 100, and the part of the first scribe area 200 corresponding to the first test element group mark 300 is a strip extending along the X direction. The first test The first side 310 and the second side 320 of the element group mark 300 both extend along the X direction; the first side 310 is adjacent to the first edge, the second side 320 is adjacent to the second edge, and the first side 310 is adjacent to the second edge. There is a first gap a between the first edges, and there is a first gap a between the second side 320 and the second edge. By reducing the width of the first test element group mark 300, that is, the vertical distance between the first side 310 and the second side 320, the distance between the first test element group mark 300 and the first pattern area 100 has a margin, so that the mask During the second scan in the manufacturing process, the resist will separate the metal, such as chrome, used as the metal layer 730 , so that there will be no excess metal remaining on the photomask.
在一些实施例中，第一间隙a满足：a≥0.5μm。In some embodiments, the first gap a satisfies: a≧0.5 μm.
一种可能实现的方式中，结合图1，第一切割道区域200的宽度为60μm，第一测试元素组标记300的宽度为59μm，沿第一测试元素组标记300的宽度方向，第一侧边310与第一边缘之间的第一间隙为0.5μm，第二侧边320与第二边缘之间的第一间隙也为0.5μm。In a possible implementation manner, referring to FIG. 1, the width of the first scribe line region 200 is 60 μm, the width of the first test element group mark 300 is 59 μm, along the width direction of the first test element group mark 300, the first side The first gap between the side 310 and the first edge is 0.5 μm, and the first gap between the second side 320 and the second edge is also 0.5 μm.
可以理解的是，第一侧边310与第一边缘之间的第一间隙的数值以及第二侧边320与第二边缘之间的第一间隙的数值可以相等也可以不相等。It can be understood that the value of the first gap between the first side 310 and the first edge and the value of the first gap between the second side 320 and the second edge may or may not be equal.
在一些实施例中，继续参照图1，第一测试元素组标记300的宽度d 1与 第一切割道区域200的宽度D 1之间满足如下关系： In some embodiments, referring to FIG. 1 , the width d 1 of the first test element group mark 300 and the width D 1 of the first scribe area 200 satisfy the following relationship:
d 1≤λ 1D 1 d 1 ≤λ 1 D 1
其中，λ 1的范围为80％-85％。 Wherein, the range of λ1 is 80%-85%.
在一些实施例中，参照图1，光罩还包括第二图形区域400以及围绕第二图形区域400的第二切割道区域500，第二切割道区域500与第一切割道区域200存在重叠区域；第二切割道区域500内具有第二测试元素组标记600，第二测试元素组标记600位于重叠区域，第二测试元素组标记600与第一测试元素组标记300沿第一方向排列，其中，第一方向为第一图形区域100与第二图形区域400的排列方向；In some embodiments, referring to FIG. 1 , the mask further includes a second pattern area 400 and a second scribe area 500 surrounding the second pattern area 400 , and the second scribe area 500 overlaps with the first scribe area 200 There is a second test element group mark 600 in the second scribe area 500, the second test element group mark 600 is located in the overlapping area, the second test element group mark 600 and the first test element group mark 300 are arranged along the first direction, wherein , the first direction is the arrangement direction of the first graphic area 100 and the second graphic area 400;
沿第一方向，第二测试元素组标记600的侧边与第二切割道区域500中邻近第二测试元素组标记600的边缘之间具有第二间隙。Along the first direction, there is a second gap between the side of the second test element group mark 600 and the edge adjacent to the second test element group mark 600 in the second scribe area 500 .
需要说明的是，光罩用于晶圆曝光的过程中，晶圆上具有多个呈阵列分布的芯片区域，光罩对应一个或者一组芯片区域具有一个图形区域，每个图形区域也呈阵列分布，每个图形区域对应的芯片区域为一个测试组，每个测试组对应一个测试元素组标记。It should be noted that the photomask is used in the process of exposing the wafer. There are multiple chip areas distributed in an array on the wafer. The photomask has a graphic area corresponding to one or a group of chip areas, and each graphic area is also in an array. Distribution, the chip area corresponding to each graphic area is a test group, and each test group corresponds to a test element group mark.
继续参照图1，第一图形区域100与第二图形区域400均为矩形，且第一图形区域100与第二图形区域400沿Y方向排列，第一切割道区域200围绕在第一图形区域100外侧，第二切割道区域500围绕在第二图形区域400外侧，第一切割道区域200包括沿X方向延伸的第一部分和第二部分，且第一部分和第二部分沿Y方向排列，第二切割道区域500包括沿X方向延伸的第三部分和第四部分，且第三部分和第四部分沿Y方向排列，第三部分与第二部分完全重合。第一测试元素组标记300位于第一部分内，用于与第一图形区域100配合，第二测试元素组标记600位于第三部分即第二部分内，用于与第二图形区域400配合。Continuing to refer to FIG. 1 , the first graphic area 100 and the second graphic area 400 are both rectangular, and the first graphic area 100 and the second graphic area 400 are arranged along the Y direction, and the first scribe area 200 surrounds the first graphic area 100 Outside, the second scribe area 500 surrounds the outside of the second pattern area 400, the first scribe area 200 includes a first part and a second part extending along the X direction, and the first part and the second part are arranged along the Y direction, and the second The scribe line area 500 includes a third portion and a fourth portion extending along the X direction, and the third portion and the fourth portion are arranged along the Y direction, and the third portion and the second portion are completely overlapped. The first test element group marks 300 are located in the first part for cooperating with the first graphic area 100 , and the second test element group marks 600 are located in the third part, namely the second part, for cooperating with the second graphic area 400 .
光罩中第二测试元素组标记600位于第二切割道区域500与第一切割道区域200重合的区域内，且第二测试元素组标记600的侧边与第二切割道区域500或第一切割道区域200中邻近第二测试元素组标记600的边缘之间具 有第二间隙，即第二测试元素组标记600与第二图形区域400之间具有第二间隙，在光罩的制作过程中，第二次扫描时光刻胶会将金属隔开，从而使得位于第二间隙内的金属被去除，光罩上不会有多余的金属残留，从而避免残留金属对晶圆芯片图形区域的影响。The second test element group mark 600 in the photomask is located in the area where the second scribe line area 500 overlaps with the first scribe line area 200, and the side of the second test element group mark 600 is in line with the second scribe line area 500 or the first scribe line area. There is a second gap between the edges adjacent to the second test element group mark 600 in the dicing line area 200, that is, there is a second gap between the second test element group mark 600 and the second pattern area 400, during the production process of the mask , the resist will separate the metal during the second scan, so that the metal located in the second gap is removed, and there will be no excess metal residue on the photomask, thereby avoiding the influence of the residual metal on the pattern area of the wafer chip.
需要说明的是，第一间隙和第二间隙的数值可以相等也可以不相等。It should be noted that the values of the first gap and the second gap may or may not be equal.
在一些实施例中，第二测试元素组标记600的形状为矩形，第二测试元素组标记600的侧边包括平行设置的第三侧边610和第四侧边620，且第三侧边610以及第四侧边620的延伸方向均与第二切割道区域500的延伸方向相同，第二切割道区域500的边缘包括第三边缘和第四边缘，第三边缘位于第三侧边610背离第四侧边620一侧，第四边缘位于第四侧边620背离第三侧边610一侧；In some embodiments, the shape of the second test element group mark 600 is a rectangle, and the sides of the second test element group mark 600 include a third side 610 and a fourth side 620 arranged in parallel, and the third side 610 And the extension direction of the fourth side 620 is the same as the extension direction of the second scribe area 500, the edge of the second scribe area 500 includes a third edge and a fourth edge, and the third edge is located on the third side 610 away from the first On one side of the four sides 620, the fourth edge is located on the side of the fourth side 620 away from the third side 610;
第三侧边610与第三边缘之间具有第二间隙；和/或，There is a second gap between the third side 610 and the third edge; and/or,
第四侧边620与第四边缘之间具有第二间隙。There is a second gap between the fourth side 620 and the fourth edge.
参照图1，第二切割道区域500为围绕第二图形区域400的环形区域，第二切割道区域500与第二测试元素组标记600对应的部分为沿X方向延伸的条形，第二测试元素组标记600的第三侧边610以及第四侧边620均沿X方向延伸；第三侧边610与第三边缘邻近，第四侧边620与第四边缘邻近，第三侧边610与第三边缘之间具有第二间隙b，第四侧边620与第四边缘之间具有第二间隙b。通过减小第二测试元素组标记600的宽度即第三侧边610与第四侧边620的垂直距离，使得第二测试元素组标记600距离第二图形区域400具有余量，从而使得光罩制程中第二次扫描时光刻胶会将作为金属层730的金属如铬隔开，从而使光罩上不会有多余的金属残留。Referring to FIG. 1, the second scribe area 500 is an annular area surrounding the second graphic area 400, and the part of the second scribe area 500 corresponding to the second test element group mark 600 is a strip extending along the X direction. The second test The third side 610 and the fourth side 620 of the element group mark 600 both extend along the X direction; the third side 610 is adjacent to the third edge, the fourth side 620 is adjacent to the fourth edge, and the third side 610 is adjacent to the fourth edge. There is a second gap b between the third edges, and there is a second gap b between the fourth side 620 and the fourth edge. By reducing the width of the second test element group mark 600, that is, the vertical distance between the third side 610 and the fourth side 620, the distance between the second test element group mark 600 and the second pattern area 400 has a margin, so that the mask During the second scan in the manufacturing process, the resist will separate the metal, such as chrome, used as the metal layer 730 , so that there will be no excess metal remaining on the photomask.
在一些实施例中，第二间隙b满足：b≥0.5μm。In some embodiments, the second gap b satisfies: b≧0.5 μm.
一种可能实现的方式中，结合图1，第二切割道区域500的宽度为60μm，第二测试元素组标记600的宽度为59μm，沿第二测试元素组标记600的宽度方向，第三侧边610与第三边缘之间的第二间隙为0.5μm，第四侧边620与第四边缘之间的第二间隙也为0.5μm。In a possible implementation manner, referring to FIG. 1 , the width of the second scribe line region 500 is 60 μm, the width of the second test element group mark 600 is 59 μm, along the width direction of the second test element group mark 600, the third side The second gap between the side 610 and the third edge is 0.5 μm, and the second gap between the fourth side 620 and the fourth edge is also 0.5 μm.
可以理解的是，第三侧边610与第三边缘之间的第二间隙的数值以及第四侧边620与第四边缘之间的第二间隙的数值可以相等也可以不相等。It can be understood that the value of the second gap between the third side 610 and the third edge and the value of the second gap between the fourth side 620 and the fourth edge may or may not be equal.
在一些实施例中，继续参照图1，第二测试元素组标记600的宽度d 2与第二切割道区域500宽度D 2之间满足如下关系： In some embodiments, referring to FIG. 1 , the width d 2 of the second test element group mark 600 and the width D 2 of the second scribe area 500 satisfy the following relationship:
d 2≤λ 2D 2 d 2 ≤λ 2 D 2
其中，λ 2的范围为80％-85％。 Wherein, the range of λ 2 is 80%-85%.
在一些实施例中，参照图2和图3，第一切割道区域200包括第一子切割道区域210和第二子切割道区域220，其中，第一子切割道区域210位于第二子切割道区域220和第一图形区域100之间，且第二子切割道区域220围绕第一子切割道区域210，第一子切割道区域210围绕第一图形区域100。In some embodiments, referring to FIG. 2 and FIG. 3 , the first kerf area 200 includes a first sub-kerf area 210 and a second sub-kerf area 220 , wherein the first sub-kerf area 210 is located in the second sub-kerf area 210 . Between the street area 220 and the first pattern area 100 , and the second sub-scribing line area 220 surrounds the first sub-scribing line area 210 , and the first sub-scribing line area 210 surrounds the first pattern area 100 .
根据一些实施例，参照图2和图3，并结合图4a-图4d，本申请第二方面提供一种光罩制作方法，包括：According to some embodiments, referring to FIG. 2 and FIG. 3 , and in combination with FIG. 4a-FIG. 4d, the second aspect of the present application provides a photomask manufacturing method, including:
提供一基板700，基板700包括衬底710、位于衬底710一侧的半透明膜层720、以及位于半透明膜层720背离衬底710一侧的金属层730，例如，金属层730可以采用金属铬；A substrate 700 is provided, and the substrate 700 includes a substrate 710, a semitransparent film layer 720 located on one side of the substrate 710, and a metal layer 730 located on the side of the semitransparent film layer 720 away from the substrate 710, for example, the metal layer 730 can adopt metal chrome;
对基板700进行第一次图案化处理，以在基板700上形成第一图案，第一图案包括第一图形区域100、围绕第一图形区域100的第一子切割道区域210、以及第一测试元素组标记300，且第一测试元素组标记300与第一子切割道区域210存在重叠区域；沿第一子切割道区域210的宽度方向，第一测试元素组标记300与第一图形区域100的间距大于第一子切割道区域210与第一图形区域100的间距；The substrate 700 is patterned for the first time to form a first pattern on the substrate 700. The first pattern includes a first pattern area 100, a first sub-scribe area 210 surrounding the first pattern area 100, and a first test pattern. Element group marks 300, and the first test element group marks 300 overlap with the first sub-scribe area 210; along the width direction of the first sub-scrib area 210, the first test element group marks 300 and the first pattern area 100 The distance between is larger than the distance between the first sub-scribe area 210 and the first pattern area 100;
对基板700进行第二次图案化处理，以在基板700的第一图案的上形成第二图案，第二图案包括第二子切割道区域220以及第二测试元素组标记600；第二子切割道区域220围绕第一子切割道区域210，以与第一子切割道区域210形成第一切割道区域200；第一测试元素组标记300与第二子切割道区域220存在重叠区域，且第二测试元素组标记600与第一子切割道区域210和第二子切割道区域220均存在重叠区域，且第二测试元素组标记600与第一测 试元素组标记300沿第一方向排列；沿第一方向，第一测试元素组标记300的边缘与第一切割道区域200中邻近第一测试元素组标记300的边缘之间具有第一间隙；第二测试元素组标记600的边缘与第一切割道区域200中邻近第二测试元素组标记600的边缘之间具有第二间隙。The substrate 700 is patterned for the second time to form a second pattern on the first pattern of the substrate 700, the second pattern includes the second sub-cutting area 220 and the second test element group mark 600; the second sub-cut The road area 220 surrounds the first sub-cut road area 210 to form the first road area 200 with the first sub-cut road area 210; the first test element group mark 300 overlaps with the second sub-cut road area 220, and the second The two test element group marks 600 overlap with the first sub-cutting line region 210 and the second sub-cutting line region 220, and the second test element group mark 600 and the first test element group mark 300 are arranged along the first direction; In the first direction, there is a first gap between the edge of the first test element group mark 300 and the edge adjacent to the first test element group mark 300 in the first scribe area 200; There is a second gap between edges adjacent to the second test element group mark 600 in the scribe line region 200 .
本申请的实施例至少具有以下优点：Embodiments of the present application have at least the following advantages:
在光罩的制作过程中，第一测试元素组标记300距离第一图形区域100具有余量，从而使得光罩制程中第二次扫描时光刻胶会将作为金属层730的金属如铬隔开，从而使光罩上不会有多余的金属残留。During the production process of the photomask, the distance between the first test element group mark 300 and the first pattern area 100 has a margin, so that the resist will separate the metal as the metal layer 730 such as chromium during the second scanning during the photomask production process. , so that there will be no excess metal residue on the mask.
图2为光罩制作过程中的第一次曝光，第一测试元素组标记300以及第一子切割道区域210均为透光区域，第一光罩的第一图形区域100为遮光区域，使得光罩上第一子切割道区域210以及第一测试元素组标记300被曝光，光罩上第二子切割道区域220、第一图形区域100、以及第二测试元素组标记600被遮挡。Fig. 2 is the first exposure in the photomask manufacturing process, the first test element group mark 300 and the first sub-cutting line area 210 are all light-transmitting areas, and the first pattern area 100 of the first photomask is a light-shielding area, so that The first sub-scribe area 210 and the first test element group mark 300 on the mask are exposed, and the second sub-scribe area 220 , the first pattern area 100 and the second test element group mark 600 on the mask are blocked.
图3为光罩制作过程中的第二次曝光，第二测试元素组标记600以及第二子切割道区域220均为透光区域，第二光罩的第一图形区域100为遮光区域，使得光罩上第二子切割道区域220以及第二测试元素组标记600被曝光，光罩上第一子切割道区域210、第一图形区域100、以及第一测试元素组标记300被遮挡。由于光罩中第一测试元素组标记300距离第一图形区域100具有余量，从而使的光罩上不会有多余的金属残留，故晶圆曝光时不会影响测试组内芯片区域内的图形。Fig. 3 is the second exposure in the photomask manufacturing process, the second test element group mark 600 and the second sub-cut line area 220 are all light-transmitting areas, and the first pattern area 100 of the second photomask is a light-shielding area, so that The second sub-scribe area 220 and the second test element group mark 600 on the mask are exposed, and the first sub-scribe area 210 , the first pattern area 100 and the first test element group mark 300 on the mask are blocked. Since the first test element group mark 300 in the photomask has a margin from the first pattern area 100, there will be no excess metal residue on the photomask, so the exposure of the wafer will not affect the chip area in the test group. graphics.
图4a-图4d示出了对基板700进行第二次曝光的过程，参照图4a，在基板700上涂覆光刻胶，形成光刻胶层800；对涂覆有光刻胶的基板700进行曝光处理，图4a中虚线为曝光范围；参照图4b，通过对曝光后的光刻胶进行显影操作得到图形化的光刻胶层800；参照图4c，对显影后的光刻胶进行蚀刻；参照图4d，通过使用蚀刻溶液对基板700进行蚀刻，切割道区域内邻近第一图形区域100的金属如铬被刻蚀，且无残留。Figure 4a-Figure 4d shows the process that substrate 700 is exposed for the second time, with reference to Figure 4a, photoresist is coated on substrate 700, forms photoresist layer 800; Perform exposure treatment, the dotted line in Figure 4a is the exposure range; referring to Figure 4b, a patterned photoresist layer 800 is obtained by developing the exposed photoresist; referring to Figure 4c, etching the developed photoresist ; Referring to FIG. 4d, by using an etching solution to etch the substrate 700, the metal such as chromium adjacent to the first pattern area 100 in the scribe line area is etched without residue.
在一些实施例中，第一间隙a满足：a≥0.5μm。In some embodiments, the first gap a satisfies: a≧0.5 μm.
在一些实施例中，第一测试元素组标记300的宽度d 1与第一切割道区域200的宽度D 1之间满足如下关系： In some embodiments, the width d 1 of the first test element group mark 300 and the width D 1 of the first scribe area 200 satisfy the following relationship:
d 1≤λ 1D 1 d 1 ≤λ 1 D 1
其中，λ 1的范围为80％-85％。 Wherein, the range of λ1 is 80%-85%.
在一些实施例中，第二间隙b满足：b≥0.5μm。In some embodiments, the second gap b satisfies: b≧0.5 μm.
在一些实施例中，第二测试元素组标记600的宽度d 2与第一切割道区域200宽度D 1之间满足如下关系： In some embodiments, the width d 2 of the second test element group mark 600 and the width D 1 of the first scribe area 200 satisfy the following relationship:
d 2≤λ 2D 1 d 2 ≤λ 2 D 1
其中，λ 2的范围为80％-85％。 Wherein, the range of λ 2 is 80%-85%.
根据一些实施例，本申请第三方面提供一种曝光方法，包括：According to some embodiments, the third aspect of the present application provides an exposure method, including:
提供一晶圆，包括多个呈阵列分布的曝光区域；providing a wafer, including a plurality of exposure areas distributed in an array;
以第一方面实施例中任一种光罩对所述晶圆进行曝光，以在每个曝光区域形成曝光图案。Exposing the wafer with any one of the photomasks in the embodiments of the first aspect to form an exposure pattern in each exposure area.
需要说明的是，晶圆至少包括一个测试组，每个测试组包括芯片区域以及围绕芯片区域的切割道，其中，切割道上设有与该测试组配合的第一测试元素组以及与邻近测试组配合的第二测试元素组。当采用本申请第一方面实施例提供的光罩对晶圆进行曝光时，第一切割道区域与切割道对应，第一图形区域与芯片区域对应，第一测试元素组标记与第一测试元素组对应，第二测试元素组标记与第二测试元素组对应。It should be noted that the wafer includes at least one test group, and each test group includes a chip area and a dicing line surrounding the chip area, wherein the dicing line is provided with a first test element group that cooperates with the test group and an adjacent test group. Fitting second test element group. When using the photomask provided in the embodiment of the first aspect of the present application to expose the wafer, the first scribe area corresponds to the scribe area, the first pattern area corresponds to the chip area, and the first test element group mark corresponds to the first test element group correspondence, the second test element group flag corresponds to the second test element group.
本申请的实施例至少具有以下优点：Embodiments of the present application have at least the following advantages:
光罩中第一测试元素组标记距离第一图形区域具有余量即第一间隙，使得光罩制作过程中将第一间隙内的金属如铬全部去除，从而使得晶圆曝光时，光罩不会影响芯片区域内的条形图形。The first test element group marks in the photomask have a margin, that is, the first gap, from the first pattern area, so that the metal in the first gap such as chromium is completely removed during the production of the photomask, so that when the wafer is exposed, the photomask does not Affects the bar pattern within the area of the chip.
本领域内的技术人员应明白，本申请的实施例可提供为方法、系统、或计算机程序产品。因此，本申请可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘 存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。Those skilled in the art should understand that the embodiments of the present application may be provided as methods, systems, or computer program products. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
本申请是参照根据本申请实施例的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。The present application is described with reference to flowcharts and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the present application. It should be understood that each procedure and/or block in the flowchart and/or block diagram, and a combination of procedures and/or blocks in the flowchart and/or block diagram can be realized by computer program instructions. These computer program instructions may be provided to a general purpose computer, special purpose computer, embedded processor, or processor of other programmable data processing equipment to produce a machine such that the instructions executed by the processor of the computer or other programmable data processing equipment produce a An apparatus for realizing the functions specified in one or more procedures of the flowchart and/or one or more blocks of the block diagram.
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing apparatus to operate in a specific manner, such that the instructions stored in the computer-readable memory produce an article of manufacture comprising instruction means, the instructions The device realizes the function specified in one or more procedures of the flowchart and/or one or more blocks of the block diagram.
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。These computer program instructions can also be loaded onto a computer or other programmable data processing device, causing a series of operational steps to be performed on the computer or other programmable device to produce a computer-implemented process, thereby The instructions provide steps for implementing the functions specified in the flow chart or blocks of the flowchart and/or the block or blocks of the block diagrams.
尽管已描述了本申请的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请范围的所有变更和修改。While preferred embodiments of the present application have been described, additional changes and modifications to these embodiments can be made by those skilled in the art once the basic inventive concept is appreciated. Therefore, the appended claims are intended to be construed to cover the preferred embodiment and all changes and modifications which fall within the scope of the application.
显然，本领域的技术人员可以对本申请实施例进行各种改动和变型而不脱离本申请实施例的精神和范围。这样，倘若本申请实施例的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。Apparently, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. In this way, if the modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and equivalent technologies, the present application also intends to include these modifications and variations.

Claims (15)

  1. 一种光罩，包括：第一图形区域以及围绕所述第一图形区域的第一切割道区域，所述第一切割道区域内具有第一测试元素组标记，且沿所述第一切割道区域的宽度方向，所述第一测试元素组标记的侧边与所述第一切割道区域中邻近所述第一测试元素组标记的边缘之间具有第一间隙。A photomask, comprising: a first graphic area and a first scribe area surrounding the first graphic area, a first test element group mark is provided in the first scribe area, and along the first scribe area In the width direction of the area, there is a first gap between the side of the first test element group mark and the edge adjacent to the first test element group mark in the first scribe area.
  2. 根据权利要求1所述的光罩，其中，所述第一测试元素组标记的形状为矩形，所述第一测试元素组标记的侧边包括平行设置的第一侧边和第二侧边，且所述第一侧边以及所述第二侧边的延伸方向均与所述第一切割道区域的延伸方向相同，所述第一切割道区域的边缘包括第一边缘和第二边缘，所述第一边缘位于所述第一侧边背离所述第二侧边的一侧，所述第二边缘位于所述第二侧边背离所述第一侧边的一侧；The photomask according to claim 1, wherein the shape of the first test element group mark is a rectangle, and the sides of the first test element group mark include a first side and a second side arranged in parallel, And the extension direction of the first side and the second side is the same as the extension direction of the first scribe area, and the edge of the first scribe area includes a first edge and a second edge, so The first edge is located on a side of the first side away from the second side, and the second edge is located on a side of the second side away from the first side;
    所述第一侧边与所述第一边缘之间具有所述第一间隙；和/或，There is the first gap between the first side and the first edge; and/or,
    所述第二侧边与所述第二边缘之间具有所述第一间隙。There is the first gap between the second side and the second edge.
  3. 根据权利要求1所述的光罩，其中，所述第一间隙a满足：a≥0.5μm。The photomask according to claim 1, wherein the first gap a satisfies: a≧0.5 μm.
  4. 根据权利要求1所述的光罩，其中，所述第一测试元素组标记的宽度d 1与所述第一切割道区域的宽度D 1之间满足如下关系： The photomask according to claim 1, wherein the width d1 of the first test element group mark and the width D1 of the first scribe line region satisfy the following relationship:
    d 1≤λ 1D 1 d 1 ≤λ 1 D 1
    其中，λ 1的范围为80％-85％。 Wherein, the range of λ1 is 80%-85%.
  5. 根据权利要求1所述的光罩，其中，所述光罩还包括第二图形区域以及围绕所述第二图形区域的第二切割道区域，所述第二切割道区域与所述第一切割道区域存在重叠区域；所述第二切割道区域内具有第二测试元素组标记，所述第二测试元素组标记位于所述重叠区域，所述第二测试元素组标记与所述第一测试元素组标记沿第一方向排列，其中，所述第一方向为所述第一图形区域与所述第二图形区域的排列方向；The photomask according to claim 1, wherein the photomask further comprises a second pattern area and a second scribe area surrounding the second pattern area, the second scribe area is connected to the first scribe area. There is an overlapping area in the road area; there is a second test element group mark in the second cutting line area, and the second test element group mark is located in the overlapping area, and the second test element group mark and the first test The element group marks are arranged along a first direction, wherein the first direction is an arrangement direction of the first graphic area and the second graphic area;
    沿所述第一方向，所述第二测试元素组标记的侧边与所述第二切割道区 域中邻近所述第二测试元素组标记的边缘之间具有第二间隙。Along the first direction, there is a second gap between a side of the second test element set mark and an edge of the second scribe line region adjacent to the second test element set mark.
  6. 根据权利要求5所述的光罩，其中，所述第二测试元素组标记的形状为矩形，所述第二测试元素组标记的侧边包括平行设置的第三侧边和第四侧边，且所述第三侧边以及所述第四侧边的延伸方向均与所述第二切割道区域的延伸方向相同，所述第二切割道区域的边缘包括第三边缘和第四边缘，所述第三边缘位于所述第三侧边背离所述第四侧边一侧，所述第四边缘位于所述第四侧边背离所述第三侧边一侧；The photomask according to claim 5, wherein the shape of the second test element group mark is a rectangle, and the sides of the second test element group mark include a third side and a fourth side arranged in parallel, And the extension direction of the third side and the fourth side is the same as the extension direction of the second scribe area, and the edge of the second scribe area includes a third edge and a fourth edge, so The third edge is located on a side of the third side away from the fourth side, and the fourth edge is located on a side of the fourth side away from the third side;
    所述第三侧边与所述第三边缘之间具有所述第二间隙；和/或，There is the second gap between the third side and the third edge; and/or,
    所述第四侧边与所述第四边缘之间具有所述第二间隙。There is the second gap between the fourth side and the fourth edge.
  7. 根据权利要求5所述的光罩，其中，所述第二间隙b满足：b≥0.5μm。The photomask according to claim 5, wherein the second gap b satisfies: b≧0.5 μm.
  8. 根据权利要求5所述的光罩，其中，所述第二测试元素组标记的宽度d 2与所述第二切割道区域宽度D 2之间满足如下关系： The photomask according to claim 5, wherein the width d2 of the second test element group mark and the width D2 of the second scribe line area satisfy the following relationship:
    d 2≤λ 2D 2 d 2 ≤λ 2 D 2
    其中，λ 2的范围为80％-85％。 Wherein, the range of λ 2 is 80%-85%.
  9. 根据权利要求1所述的光罩，其中，所述第一切割道区域包括第一子切割道区域和第二子切割道区域，其中，所述第一子切割道区域位于所述第二子切割道区域和所述第一图形区域之间，且所述第二子切割道区域围绕所述第一子切割道区域，所述第一子切割道区域围绕所述第一图形区域。The photomask according to claim 1, wherein the first scribe area includes a first sub-scribe area and a second sub-scribe area, wherein the first sub-scribe area is located in the second sub-scribe area. Between the kerf area and the first graphic area, and the second sub-kerf area surrounds the first sub-kerf area, and the first sub-kerf area surrounds the first graphic area.
  10. 一种光罩制作方法，包括：A method for making a photomask, comprising:
    提供一基板；providing a substrate;
    对所述基板进行第一次图案化处理，以在所述基板上形成第一图案，所述第一图案包括第一图形区域、围绕所述第一图形区域的第一子切割道区域、以及第一测试元素组标记，且所述第一测试元素组标记与所述第一子切割道区域存在重叠区域；沿所述第一子切割道区域的宽度方向，所述第一测试元素组标记与所述第一图形区域的间距大于所述第一子切割道区域与所述第一图形区域的间距；performing a first patterning process on the substrate to form a first pattern on the substrate, the first pattern including a first pattern area, a first sub-scribe area surrounding the first pattern area, and The first test element group marks, and the first test element group marks overlap with the first sub-scribe area; along the width direction of the first sub-scribe area, the first test element group marks The distance from the first pattern area is greater than the distance between the first sub-cutting line area and the first pattern area;
    对所述基板进行第二次图案化处理，以在所述基板的第一图案的上形成第二图案，所述第二图案包括第二子切割道区域以及第二测试元素组标记；所述第二子切割道区域围绕所述第一子切割道区域，以与所述第一子切割道区域形成第一切割道区域；所述第一测试元素组标记与所述第二子切割道区域存在重叠区域，且所述第二测试元素组标记与所述第一子切割道区域和所述第二子切割道区域均存在重叠区域，且所述第二测试元素组标记与所述第一测试元素组标记沿第一方向排列；沿所述第一方向，所述第一测试元素组标记的边缘与所述第一切割道区域中邻近所述第一测试元素组标记的边缘之间具有第一间隙；所述第二测试元素组标记的边缘与所述第一切割道区域中邻近所述第二测试元素组标记的边缘之间具有第二间隙。performing a second patterning process on the substrate to form a second pattern on the first pattern of the substrate, the second pattern including a second sub-cutting line area and a second test element group mark; the The second sub-scribing street area surrounds the first sub-scribing street area to form a first scribing street area with the first sub-scribing street area; the first test element group mark and the second sub-scribing street area There is an overlapping area, and there is an overlapping area between the second test element group mark and the first sub-cutting line area and the second sub-cutting line area, and the second test element group mark and the first The test element group marks are arranged along a first direction; along the first direction, there is a space between an edge of the first test element group mark and an edge adjacent to the first test element group mark in the first scribe area. A first gap; there is a second gap between the edge of the second test element group mark and the edge adjacent to the second test element group mark in the first scribe area.
  11. 根据权利要求10所述的制作方法，其中，所述第一间隙a满足：a≥0.5μm。The manufacturing method according to claim 10, wherein the first gap a satisfies: a≧0.5 μm.
  12. 根据权利要求10所述的制作方法，其中，所述第一测试元素组标记的宽度d 1与所述第一切割道区域的宽度D 1之间满足如下关系： The manufacturing method according to claim 10, wherein the width d1 of the first test element group mark and the width D1 of the first scribe line area satisfy the following relationship:
    d 1≤λ 1D 1 d 1 ≤λ 1 D 1
    其中，λ 1的范围为80％-85％。 Wherein, the range of λ1 is 80%-85%.
  13. 根据权利要求10所述的制作方法，其中，所述第二间隙b满足：b≥0.5μm。The manufacturing method according to claim 10, wherein the second gap b satisfies: b≧0.5 μm.
  14. 根据权利要求10所述的制作方法，其中，所述第二测试元素组标记的宽度d 2与所述第一切割道区域宽度D 1之间满足如下关系： The manufacturing method according to claim 10, wherein the width d2 of the second test element group mark and the width D1 of the first scribe line area satisfy the following relationship:
    d 2≤λ 2D 1 d 2 ≤λ 2 D 1
    其中，λ 2的范围为80％-85％。 Wherein, the range of λ 2 is 80%-85%.
  15. 一种曝光方法，包括：A method of exposure comprising:
    提供一晶圆，包括多个呈阵列分布的曝光区域；providing a wafer, including a plurality of exposure areas distributed in an array;
    以如权利要求1-9中任一项所述的光罩对所述晶圆进行曝光，以在每个所述曝光区域形成曝光图案。Exposing the wafer with the photomask according to any one of claims 1-9, so as to form an exposure pattern in each of the exposure regions.
PCT/CN2021/138265 2021-11-15 2021-12-15 Photomask, and manufacturing method and exposure method therefor WO2023082411A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111350363.4 2021-11-15
CN202111350363.4A CN116125744A (en) 2021-11-15 2021-11-15 Photomask, manufacturing method thereof and exposure method

Publications (1)

Publication Number Publication Date
WO2023082411A1 true WO2023082411A1 (en) 2023-05-19

Family

ID=86306849

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/138265 WO2023082411A1 (en) 2021-11-15 2021-12-15 Photomask, and manufacturing method and exposure method therefor

Country Status (2)

Country Link
CN (1) CN116125744A (en)
WO (1) WO2023082411A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117311108B (en) * 2023-11-30 2024-04-05 合肥晶合集成电路股份有限公司 Overlay mark and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104335A (en) * 1992-09-18 1994-04-15 Nippon Steel Corp Semiconductor wafer
TW417042B (en) * 2000-03-27 2001-01-01 Taiwan Semiconductor Mfg Method of making attenuated phase shift mask
US20020100012A1 (en) * 2001-01-24 2002-07-25 Takumichi Sutani Focus monitoring method, exposure apparatus, and exposure mask
CN101592869A (en) * 2008-05-29 2009-12-02 中芯国际集成电路制造(北京)有限公司 Exposure equipment focal distance monitoring method
CN108459463A (en) * 2017-02-22 2018-08-28 中芯国际集成电路制造(上海)有限公司 A kind of light shield and preparation method thereof
CN112614803A (en) * 2020-12-30 2021-04-06 合肥晶合集成电路股份有限公司 Method for preparing integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104335A (en) * 1992-09-18 1994-04-15 Nippon Steel Corp Semiconductor wafer
TW417042B (en) * 2000-03-27 2001-01-01 Taiwan Semiconductor Mfg Method of making attenuated phase shift mask
US20020100012A1 (en) * 2001-01-24 2002-07-25 Takumichi Sutani Focus monitoring method, exposure apparatus, and exposure mask
CN101592869A (en) * 2008-05-29 2009-12-02 中芯国际集成电路制造(北京)有限公司 Exposure equipment focal distance monitoring method
CN108459463A (en) * 2017-02-22 2018-08-28 中芯国际集成电路制造(上海)有限公司 A kind of light shield and preparation method thereof
CN112614803A (en) * 2020-12-30 2021-04-06 合肥晶合集成电路股份有限公司 Method for preparing integrated circuit

Also Published As

Publication number Publication date
CN116125744A (en) 2023-05-16

Similar Documents

Publication Publication Date Title
KR101215742B1 (en) Method for manufacturing gray tone mask and gray tone mask
JP5555789B2 (en) Photomask, manufacturing method thereof, and pattern transfer method
JP4896671B2 (en) Halftone mask and pattern substrate manufacturing method using the same
US20080241708A1 (en) Sub-resolution assist feature of a photomask
JP5635577B2 (en) Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
US8423918B2 (en) Structure and methodology for fabrication and inspection of photomasks by a single design system
JP2011215197A (en) Photomask and method for manufacturing the same
JP5668168B1 (en) Proximity exposure photomask
JP2014066863A5 (en)
JP2011075656A (en) Photomask, method for manufacturing photomask, method for transferring pattern and method for manufacturing liquid crystal display device
JP2009063995A (en) Gray scale mask
WO2023082411A1 (en) Photomask, and manufacturing method and exposure method therefor
TWI541590B (en) Method of manufacturing a photomask, photomask and pattern transfer method
WO2013122220A1 (en) Phase shift mask and method for forming resist pattern using phase shift mask
JP2001312045A (en) Method for forming mask
KR20230120090A (en) Photomask for fpd, method for forming position measurement mark in photomask for fpd, and method for manufacturing photomask for fpd
JP2007041024A (en) Drawing data generating program, electron beam lithography system, and method for manufacturing mask
US6730608B2 (en) Full image exposure of field with alignment marks
JP2007233138A (en) Mask, method for manufacturing mask, and method for manufacturing semiconductor device using the mask
TWI810039B (en) Method of forming a semiconductor structure
JP7507100B2 (en) Photomask, photomask manufacturing method, and display device manufacturing method
CN113130303B (en) Mask and triple patterning method
JP3470758B2 (en) Semiconductor integrated circuit and manufacturing method thereof
JP7261709B2 (en) Photomask, photomask manufacturing method, and display device manufacturing method
JP2001166451A (en) Phase shift mask having three different phase shift region and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21963849

Country of ref document: EP

Kind code of ref document: A1